CN100368913C - Thin film diode liquid crystal display with high aperture ratio - Google Patents
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- CN100368913C CN100368913C CNB2005100067322A CN200510006732A CN100368913C CN 100368913 C CN100368913 C CN 100368913C CN B2005100067322 A CNB2005100067322 A CN B2005100067322A CN 200510006732 A CN200510006732 A CN 200510006732A CN 100368913 C CN100368913 C CN 100368913C
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Abstract
The present invention relates to a back-to-back type thin film diode liquid crystal display, which comprises metal-insulating layer-metal diodes, a transparent conducting layer, a semiconductor isolation layer and a metal conducting layer, wherein the metal-insulating layer-metal diodes are respectively formed on a double scanning line; the transparent conducting layer on an active base plate comprises a pixel electrode, a first bottom layer, a second bottom layer, a third bottom layer and a fourth bottom layer; the semiconductor isolation layer is provided with a first touching opening on the first bottom layer and a second touching opening on the third bottom layer, and is covered on the active base plate and the transparent conducting layer; the metal conducting layer is provided with a first scanning line, a second scanning line, a first top layer and a second top layer; an overlapping region of the first bottom layer and the first top layer is a first metal-insulating layer-metal diode; an overlapping region of the second bottom layer and the first top layer is a second metal-insulating layer-metal diode; an overlapping region of the third bottom layer and the second top layer is a third metal-insulating layer-metal diode; an overlapping region of the fourth bottom layer and the second top layer is a fourth metal-insulating layer-metal diode. The first scanning line is electrically connected to the first bottom layer by the first touching opening, and the second scanning line is electrically connected to the third bottom layer by the second touching opening. The first top layer and the second top layer are electrically isolated from the first scanning line and the second scanning line, and are respectively positioned in surface structures of the first scanning line and the second scanning line.
Description
Technical field
The present invention system relates to a kind of thin film diode liquid crystal display, particularly a kind of thin film diode liquid crystal display with high aperture ratio.
Prior art
The application in daily life of existing LCD is quite extensive, such as personal digital assistant, the needed display of PC and notebook computer, the TV of home entertainment, electronic type wrist-watch or table are gone up the operation interface of digital read clock duplicating machine equipment, the displays of fascia etc., nearly all display interface all can be used LCD.LCD can produce the color shades more than 60,000 till now from having only the type of drive of monochrome and passive type in early days, and type of drive initiatively etc., has all improved the application of LCD significantly.
Present LCD mainly is to use active mode to drive liquid crystal.Active LCD generally uses thin film transistor (TFT) to drive the direction of liquid crystal molecule.But the manufacturing process complexity of thin film transistor (TFT), generally need four to five photography imprint process processes, and use very complicated shadow tone (half-tone) photography imprint process or other half exposure imaging technology for the number of times that reduces photography imprint process process, the good rate of technology of liquid crystal panel is reduced.
A kind of active type of drive is to use thin film diode as driving element.Thin film diode has simple structure, and technology is simple, the good more high many advantages of rate.As prior art U.S. Patent number 5926236, and shown in the U.S. Patent number 6008872 etc.
Yet,, in the design of driving circuit, can produce many problems because the electric current and voltage figure of above-mentioned thin film diode is not to be symmetrical.Also have ghost and the unequal variety of problems of GTG in addition.A kind of mode of improvement just is to use four thin film diodes, electrical block diagram as shown in Figure 1.In Fig. 1, a pixel unit (pixel cell) the 10th is by a liquid crystal capacitance 20, formed two the back-to-back metal-insulator- metal diodes 37,39 of four metal-insulator-metal diodes (30,32,34,36), article two, selection wire (being also referred to as sweep trace) 40,42, and an institute such as data line 50 forms, wherein liquid crystal capacitance 20 comprises a pair of pixel capacitors 22,24, between pixel capacitors 22,24 liquid crystal molecule 26 is arranged.This structure is called the back-to-back formula thin film diode liquid crystal display of dual scanning line (dua1-select), and its current/voltage distributes, as shown in Figure 2, for symmetry.This class technology can be referring to prior art U.S. Patent number 6225968, U.S. Patent number 6243062, Japanese patent application publication No. 2002-043657, Japanese patent application publication No. 2000-098429, Japanese patent application publication No. 11-305267, Taiwan patent announcement numbers 571169, Taiwan patent announcement numbers 500947, European patent 0434627 etc.
But the back-to-back formula thin film diode liquid crystal display of this dual scanning line still has weak point to demand urgently improving in the technology of reality.As shown in Figure 3, be the part-structure synoptic diagram of the liquid crystal cells (cell) 10 of Fig. 2.In Fig. 3, mainly be presented at initiatively and have 22, four metal-insulator-metal diodes of a pixel capacitors 30,32,34,36 on the substrate, and two selection wires 40,42.Another pixel capacitors 24 and data line 50 generally are to be positioned on the color filter substrate.After active substrate and color filter baseplate-laminating and sealing, just can inject liquid crystal to form liquid crystal panel.In Fig. 3, the position of four thin film diodes 30,32,34,36 all takies the area of a part of pixel capacitors 22, has therefore reduced the aperture ratio of pixel.
Therefore, at such metal-insulator-metal diode structure, need a kind of new structure increasing the aperture ratio of pixel, and can guarantee the good rate of simple and easy and higher technology of technology simultaneously.
Summary of the invention
In view of under above-mentioned background of invention, traditional problems that thin film diode liquid crystal display produced and shortcoming, the main purpose of the present invention are to provide the thin film diode liquid crystal display of a kind of high aperture ratio.On sweep trace, can significantly improve the aperture ratio to four thin film diode designs.The mode of making is earlier transparency electrode to be formed on the first metal layer of being used as pixel capacitors and thin film diode on the glass substrate, then makes the semiconducting insulation layer, plates metal level at last, is made on the sweep trace as the signal scanning line and with back to back diode.
Another object of the present invention is the good rate of simple and higher technology that can keep technology simultaneously.
According to above-described purpose, the invention provides a kind of thin film diode liquid crystal display with high aperture ratio, comprise one first substrate and one second substrate, liquid crystal molecule is between this first substrate and this second substrate.Above-mentioned first substrate comprises a transparency conducting layer, a semiconducting insulation layer, and a metal conducting layer.Described transparency conducting layer is positioned on this first substrate, and comprise one first pixel capacitors, one first bottom, second bottom that is connected with the electric property of this first pixel capacitors, one the 3rd bottom, and one the 4th bottom that is connected with the electric property of this first pixel capacitors.Described semiconducting insulation layer covers on this first substrate and this transparency conducting layer, and has first contact openings and second contact openings that is positioned on the 3rd bottom that is positioned on this first bottom.Described metal conducting layer has one first sweep trace,, second sweep trace, one first top layer, and one second top layer, wherein first sweep trace is connected to this first bottom via the electric property of this first contact openings, and this second sweep trace is connected to the 3rd bottom via the electric property of this second contact openings.Described first top layer and the electric sexual isolation of this first sweep trace are come and are positioned at the surface structure of this first sweep trace, and this second top layer and the electric sexual isolation of this second sweep trace are come and be positioned at the contour structures of this second sweep trace.Described first bottom and this first top layer overlapping region are one first metal-insulator-metal diodes, this second bottom and this first top layer overlapping region are one second metal-insulator-metal diodes, the 3rd bottom and this second top layer overlapping region are one the 3rd metal-insulator-metal diodes, and the 4th bottom and this second top layer overlapping region are one the 4th metal-insulator-metal diodes.
Described second substrate comprises one second pixel electrode and a data line.Described second pixel electrode is positioned on this second substrate, and when this first substrate and this second baseplate-laminating, this first pixel and this second pixel are overlapping.The electric property of a described data line is connected to this second pixel, with this first sweep trace and this second sweep trace perpendicular.
In the present invention, the active member of control LCD comprises one first sweep trace and one second sweep trace, one first metal-insulator-metal diode, one second metal-insulator-metal diode, one the 3rd metal-insulator-metal diode, one the 4th metal-insulator-metal diode, and a pixel capacitors.The electric property of described pixel capacitors is connected to an end of this second metal-insulator-metal diode and the 4th metal-insulator-metal diode.The electric property of described first sweep trace is connected to an end of this first metal-insulator-metal diode, and the electric property of described second sweep trace is connected to an end of the 3rd metal-insulator-metal diode.The other end of the described first metal-insulator-metal diode is connected with the electric property of the other end of this second metal-insulator-metal diode, and the other end of described the 3rd metal-insulator-metal diode is connected with the electric property of the other end of the 4th metal-insulator-metal diode.The described first metal-insulator-metal diode and the second metal-insulator-metal diode are positioned at the contour structures of this first sweep trace, and the 3rd metal-insulator-metal diode and the 4th metal-insulator-metal diode are positioned at the contour structures of this second sweep trace.
The present invention also provides a kind of manufacturing to be used to control the method for the active member of LCD, and the step that comprises is that an electrically conducting transparent is deposited upon on the substrate.Afterwards, determine that this transparency conducting layer is a pixel region, one first bottom, second bottom that is connected with the electric property of this pixel capacitors, one the 3rd bottom, and the 4th bottom that is connected with the electric property of this pixel capacitors.Then, a semiconducting insulation is deposited upon on this substrate and this transparency conducting layer.Then, on this first bottom, form one first contact window, and on the 3rd bottom, form one second contact window.Afterwards, a metallic conduction is deposited upon on this semiconducting insulation layer, and determines that this metal conducting layer is one first sweep trace, one second sweep trace, one first top layer, and one second top layer.Described first sweep trace is connected to this first bottom via the electric property of this first contact openings, and this second sweep trace is via the electric property of this second contact openings connection the 3rd bottom.Described first top layer and the electric sexual isolation of this first sweep trace are come and are positioned at the surface structure of this first sweep trace, and this second top layer and the electric sexual isolation of this second sweep trace are come and be positioned at this second sweep trace contour structures.Described first bottom and this first top layer overlapping region are one first metal-insulator-metal diodes, this second bottom and this first top layer overlapping region are one second metal-insulator-metal diodes, the 3rd bottom and this second top layer overlapping region are one the 3rd metal-insulator-metal diodes, and the 4th bottom and this second top layer overlapping region are one the 4th metal-insulator-metal diodes.
Description of drawings
Fig. 1 is the electrical block diagram that shows the pixel unit of traditional back-to-back formula thin film diode liquid crystal display;
Fig. 2 is voltage and the current distributing figure that shows the pixel unit of traditional back-to-back formula thin film diode liquid crystal display;
Fig. 3 be show on the substrate of traditional back-to-back formula thin film diode liquid crystal display active member and at the structural representation of substrate upper tracer and pixel capacitors.
Fig. 4 is the process flow diagram that shows each step that forms structure of the present invention;
Fig. 5 A is the plan structure synoptic diagram that shows each step stage that forms structure of the present invention to Fig. 5 C; And
Fig. 6 A is the cross-sectional view that shows each step stage that forms structure of the present invention to Fig. 6 E.
The reference numeral table of comparisons:
Liquid crystal 26
Thin film diode bottom 30-1,32-1,34-1,36-1,130-1,132-1,134-1,
136-1
Contact openings 31,35,131,135
Active substrate 102
Transparent conductor layer 104
Semiconducting insulation layer 106
Conductor layer 108
First district 41,141 of conductor layer
Second district 43,143 of conductor layer
Embodiment
Some embodiments of the present invention will be carried out following detailed description.Yet except the embodiment that describes in detail, the present invention can also implement widely in other embodiments, and scope of the present invention do not limited, and is to be as the criterion with additional claim.
Moreover for clearer explanation being provided and being more readily understood the present invention, each several part is not drawn according to its relative size among the figure, and some size is compared with other scale dependents and is exaggerated; Incoherent detail section is not drawn fully yet, in the hope of illustrated succinct.
The present invention forms thin film diode on sweep trace, thereby can not take the aperture ratio of the area increase LCD of pixel electrode.
The present invention mainly provides a kind of structure and technology of the new back-to-back formula thin film diode liquid crystal display of dual scanning line, in order to improve the aperture ratio.Processing step at first deposits a transparency conducting layer as shown in Figure 4 on a substrate, wherein this layer transparency conducting layer can use tin indium oxide (ITO) or zinc-tin oxide (IZO).Afterwards, define described transparency conducting layer to form the bottom of pixel capacitors and four metal-insulator-metal diodes.This step has comprised that steps such as exposure photography mint-mark and etching form needed pixel capacitors with aforementioned transparency conducting layer, and the bottom of four metal-insulator-metal diodes.Two in the middle of the bottom of four metal-insulator-metal diodes are connected with the electric property of pixel capacitors respectively.Then, deposit a semiconducting insulation layer to cover described pixel capacitors, the bottom of four metal-insulator-metal diodes, and substrate etc., the material of wherein said semiconducting insulation layer can use silicon nitride, or other material, mainly provide the metal-insulator-metal diode middle insulation course.Then, define described semiconducting insulation layer with at two bottoms of described four metal-insulator-metal diodes and form contact openings on pixel capacitors, wherein these two bottoms are not connected with the electric property of pixel capacitors.Afterwards, conductor layer of deposition on described semiconducting insulation layer, conductor layer wherein is mainly metal.Then, define described conductor layer so that on two bottoms of these four metal-insulator-metal diodes, form two selection wires, and two top layers that on the bottom of this four metal-insulators-layer metal diode, form the metal-insulator-metal diode, two top layers of wherein said metal-insulator-metal diode and described two electric sexual isolation of selection wire are come and are positioned at the contour structures (conformation) of described two selection wires.Similarly, this step has also comprised exposure photography mint-mark and has finished the needed pattern of step such as etching.
Next the structural representation that shows each step in the embodiments of the invention according to each step of Fig. 4, wherein the 5th figure is the vertical view that shows the structural representation of each step of the present invention, and the 6th figure is the sectional view that shows the structural representation of each step of the present invention, and along the structural representation of the dotted line AB section of the 5th figure.
Fig. 5 A represents the first bottom 130-1 of pixel capacitors 122 and four metal-insulator-metal diodes, the second bottom 132-1, and the 3rd bottom 134-1 is with the schematic top plan view of the 4th bottom 136-1.Fig. 6 A shows along the structural representation of the dotted line AB section of Fig. 5 A.Initiatively deposit a transparent conductor layer on the substrate 102 at one, and this transparent conductor layer forms the first bottom 130-1 of pixel capacitors 122 and four metal-insulator-metal diodes through optical photography mint-mark and these steps of etching, the second bottom 132-1, the 3rd bottom 134-1, with the 4th bottom 136-1, wherein the second bottom 132-1 is connected with pixel capacitors 122 electric property with the 4th bottom 136-1.The technology of the general optical photography mint-mark of using comprises the photoresistance coating, and soft baking with the light shield exposure, develops, and cures firmly and step such as removing photoresistance, and light shield wherein has the pattern of pixel capacitors and the pattern of four bottoms.Photoresistance after developing has the pattern identical with light shield, and carrying out etching this moment just can be with the design transfer of pixel capacitors and four bottoms to transparent conductor layer.Etched mode can be used Wet-type etching or dry-etching, and the transparent conductor layer after the etching has the pattern identical with photoresistance.Afterwards photoresistance is removed and promptly finished this step.
In Fig. 6 A, A partly shows along the structural representation of the first bottom 130-1, and B partly shows along the structural representation of the second bottom 132-1 and partial-pixel electrode 122.Show that main between two dotted lines between the first bottom 130-1 and the second bottom 132-1 be electric sexual isolation.
When using backlight, initiatively substrate 102 can use glass, or transparent transparent materials such as high molecular polymer.Here the reason that is called the active substrate is because active member is diode in the present invention, is formed on this substrate.The another side substrate is commonly referred to as the color filter substrate, because be color filter, forms another pixel capacitors and data line thereon.The color filter substrate also can be described as passive substrate, because the element on this substrate is passive device.The material of transparent conductor layer can be tin indium oxide or zinc-tin oxide.The generation type of two kinds of materials can vacuum vapour deposition or sputter (sputtering) method comparatively commonly used now.Mode with sputtered indium tin oxide is an example, and a kind of mode is earlier indium and tin to be formed oxide respectively, and then with the powder sintered target that becomes tin indium oxide of indium oxide and tin oxide.After having formed the target of tin indium oxide, in vacuum cavity (chamber), produce arc discharge (Glow Discharge) and make Ar by argon (Ar) gas
+Ionization and impacting on the tin indium oxide target material of negative electrode makes the tin indium oxide sputter to the glass substrate of anode and pile up film forming.
Afterwards, shown in Fig. 6 B, on the first bottom 130-1, the second bottom 132-1, the 3rd bottom 134-1 (not being presented among Fig. 6 B) that a semiconducting insulation layer 104 deposition is covered substrate 102 initiatively, pixel capacitors 122, four metal-insulator-metal diodes and the 4th bottom 136-1 (not being presented among Fig. 6 B).This step is not easy in the structural representation of overlooking with the diagram expression, so this step only shows with cross-sectional view.Semiconducting insulation layer 104 mainly provides the insulation course in the middle of four metal-insulator-metal diodes.Semiconducting insulation layer 104 can use silicon nitride, silicon oxynitride, tantalum oxide, carbonitride alloy, or other material, or the combination of above-mentioned material.Generally can use silicon nitride, this is because silicon nitride material has preferably characteristics such as current-voltage characteristic.Silicon nitride generally can use plasma enhanced chemical vapor deposition (PECVD) method.
Then, definition semiconducting insulation layer 104 makes forming first contact openings 131 on the first bottom 130-1 and form second contact openings 135 on the 3rd bottom 134-1, shown in Fig. 5 B and Fig. 6 C.Simultaneously, remove the semiconducting insulation layer 104 that is positioned on the pixel capacitors 122.Here comprised steps such as similar optical photography mint-mark and etching, just the pattern of light shield has been made into the pattern of contact openings and pixel capacitors etc., and selected suitable etchant to remove the semiconducting insulation layer 104 of part.
Then, on semiconducting insulation layer 104, form a conductor layer 106, shown in Fig. 6 D.Similarly, this step is not easy in the structural representation of overlooking with the diagram expression, so this step only shows with cross-sectional view.Conductor layer 106 will use metal, and its material can be an aluminium, chromium, molybdenum, or other conducting metal, or the alloy of above-mentioned material.Its generation type can be modes such as sputter, or vacuum evaporation.
Then, definition conductor layer 106 is to form first top layer and second top layer of first sweep trace 140, second sweep trace 142 and four metal-insulator-metal diodes, shown in Fig. 5 C and Fig. 6 E.Here comprised steps such as similar optics institute's shadow and etching, just the pattern of light shield has been made into the pattern of sweep trace and metal-insulator-metal diode top layer, and selected suitable etchant in order to remove the conductor layer 106 of part.In the present invention, first top layer and second top layer are respectively with first sweep trace 140 and the 142 electric sexual isolation of second sweep trace.In addition, first top layer and second top layer lay respectively in the outward appearance kenel of first sweep trace 140 and second sweep trace 142, make to be positioned at the contour structures of first sweep trace 140 by first top layer and the formed the first film diode 130 of the first bottom 130-1 and by first top layer and formed second thin film diode 132 of the second bottom 132-1, and by second top layer and formed the 3rd thin film diode 134 of the 3rd bottom 134-1 and the contour structures that is positioned at second sweep trace 142 by second top layer and formed the 4th thin film diode 136 of the 4th bottom 136-1.Such thin-film diode structure, its equivalent electrical circuit is identical with Fig. 1, but the area of pixel capacitors 122 prior art more shown than Fig. 3 is big, and the aperture of LCD is higher frequently.Such technology only need be revised the pattern of light shield compared with the prior art in the photography imprint process of plain conductor, make the position of at last all thin film diodes all in the contour structures of sweep trace, can't spend more technology cost.
The present invention mainly will can significantly improve the aperture ratio by four formed two back-to-back formula thin film diode designs of thin film diode on sweep trace.The mode of making is earlier transparency electrode to be formed on the first metal layer of being used as pixel capacitors and thin film diode on the glass substrate, then makes the semiconducting insulation layer, plates metal level at last, is made on the sweep trace as the signal scanning line and with back to back diode.The good rate of simple and higher technology that can keep technology so simultaneously.
For those skilled in the art, though the present invention illustrates as above that by a preferred embodiments it is not in order to limit spirit of the present invention.The modification of being done and similarly arrangement without departing from the spirit and scope of the present invention all should be included in the following claim, and such scope should be consistent with the widest annotation that covers all modifications and similar structures.Therefore, a preferred embodiments of the present invention is described as above, can be used to differentiate do not break away from the various changes of being done in the spirit and scope of the present invention.
Claims (19)
1. thin film diode liquid crystal display with high aperture ratio comprises:
One first substrate comprises:
A transparency conducting layer that is positioned on this first substrate, wherein this transparency conducting layer comprises one first pixel capacitors, one first bottom, second bottom that is connected with the electric property of this first pixel capacitors, one the 3rd bottom, and one the 4th bottom that is connected with the electric property of this first pixel capacitors;
A semiconducting insulation layer that covers on this first substrate and this transparency conducting layer, wherein said semiconducting insulation layer has first contact openings and second contact openings that is positioned on the 3rd bottom that are positioned on this first bottom; And
A metal conducting layer, has one first sweep trace,, second sweep trace, one first top layer, and one second top layer, wherein said first sweep trace is connected to this first bottom via the electric property of this first contact openings, and this second sweep trace is connected to the 3rd bottom via the electric property of this second contact openings, wherein said first top layer and the electric sexual isolation of this first sweep trace are come and are positioned at the surface structure of this first sweep trace, and this second top layer and the electric sexual isolation of this second sweep trace are come and be positioned at the contour structures of this second sweep trace, wherein said first bottom and this first top layer overlapping region are one first metal-insulator-metal diodes, this second bottom and this first top layer overlapping region are one second metal-insulator-metal diodes, the 3rd bottom and this second top layer overlapping region are one the 3rd metal-insulator-metal diodes, and the 4th bottom and this second top layer overlapping region are one the 4th metal-insulator-metal diodes;
One second substrate comprises:
Second pixel electrode that is positioned on this second substrate, when this first substrate and this second baseplate-laminating, this first pixel and this second pixel are overlapping; And
Article one, the electric property of data line is connected to this second pixel, with this first sweep trace and this second sweep trace perpendicular; And
Liquid crystal molecule is between this first substrate and this second substrate.
2. the thin film diode liquid crystal display with high aperture ratio as claimed in claim 1, the material of wherein said transparency conducting layer is tin indium oxide or zinc-tin oxide.
3. the thin film diode liquid crystal display with high aperture ratio as claimed in claim 1, the material of wherein said semiconducting insulation layer is a monox, silicon oxynitride, tantalum oxide, or carbonitride alloy.
4. the thin film diode liquid crystal display with high aperture ratio as claimed in claim 1, the material of wherein said metal conducting layer is an aluminium, chromium, or molybdenum.
5. the thin film diode liquid crystal display with high aperture ratio as claimed in claim 1, wherein said pixel capacitors is between this first sweep trace and this second sweep trace.
6. the thin film diode liquid crystal display with high aperture ratio as claimed in claim 1, wherein said first sweep trace and this second sweep trace are parallel to each other.
7. active member of controlling LCD comprises:
A transparency conducting layer that is positioned on the substrate, wherein this transparency conducting layer comprises a pixel capacitors, one first bottom, second bottom that is connected with the electric property of this pixel capacitors, one the 3rd bottom, and the 4th bottom that is connected with the electric property of this pixel capacitors;
A semiconducting insulation layer that covers on this substrate and this transparency conducting layer, wherein said semiconducting insulation layer has first contact openings and second contact openings that is positioned on the 3rd bottom that are positioned on this first bottom;
A metal conducting layer, has one first sweep trace,, second sweep trace, one first top layer, and one second top layer, wherein said first sweep trace is connected to this first bottom via the electric property of this first contact openings, and this second sweep trace is connected to the 3rd bottom via the electric property of this second contact openings, wherein said first top layer and the electric sexual isolation of this first sweep trace are come and are positioned at the surface structure of this first sweep trace, and this second top layer and the electric sexual isolation of this second sweep trace are come and be positioned at the contour structures of this second sweep trace, wherein said first bottom and this first top layer overlapping region are one first metal-insulator-metal diodes, this second bottom and this first top layer overlapping region are one second metal-insulator-metal diodes, the 3rd bottom and this second top layer overlapping region are one the 3rd metal-insulator-metal diodes, and the 4th bottom and this second top layer overlapping region are one the 4th metal-insulator-metal diodes.
8. the active member of control LCD as claimed in claim 7, the material of wherein said transparency conducting layer are tin indium oxide or zinc-tin oxide.
9. the active member of control LCD as claimed in claim 7, the material of wherein said semiconducting insulation layer is a monox, silicon oxynitride, tantalum oxide, or carbonitride alloy.
10. the active member of control LCD as claimed in claim 7, the material of wherein said metal conducting layer is an aluminium, chromium, or molybdenum.
11. the active member of control LCD as claimed in claim 7, wherein said pixel capacitors is between this first sweep trace and this second sweep trace.
12. the active member of control LCD as claimed in claim 7, wherein said first sweep trace and this second sweep trace are parallel to each other.
13. an active member of controlling LCD comprises:
, first sweep trace and one second sweep trace;
One first metal-insulator-metal diode, one second metal-insulator-metal diode, one the 3rd metal-insulator-metal diode, and one the 4th metal-insulator-metal diode;
An electric property of pixel capacitors is connected to an end of this second metal-insulator-metal diode and the 4th metal-insulator-metal diode, the electric property of this first sweep trace is connected to an end of this first metal-insulator-metal diode, the electric property of this second sweep trace is connected to an end of the 3rd metal-insulator-metal diode, the other end of this first metal-insulator-metal diode is connected with the electric property of the other end of this second metal-insulator-metal diode, the other end of the 3rd metal-insulator-metal diode is connected with the electric property of the other end of the 4th metal-insulator-metal diode, the wherein said first metal-insulator-metal diode and the second metal-insulator-metal diode are positioned at the contour structures of this first sweep trace, and the 3rd metal-insulator-metal diode and the 4th metal-insulator-metal diode are positioned at the contour structures of this second sweep trace.
14. a manufacturing is used to control the method for the active member of LCD, comprising:
Transparency conducting layer of deposition on a substrate;
This transparency conducting layer is defined as a pixel region, one first bottom, second bottom that is connected with the electric property of this pixel capacitors, one the 3rd bottom, and the 4th bottom that is connected with the electric property of this pixel capacitors;
Semiconducting insulation layer of deposition on this substrate and this transparency conducting layer;
On this first bottom, form one first contact window, and on the 3rd bottom, form one second contact window;
Metal conducting layer of deposition on this semiconducting insulation layer;
This metal conducting layer is defined as one first sweep trace,, second sweep trace, one first top layer, and one second top layer, wherein said first sweep trace is connected to this first bottom via the electric property of this first contact openings, and this second sweep trace is connected to the 3rd bottom via the electric property of this second contact openings, wherein said first top layer and the electric sexual isolation of this first sweep trace are come and are positioned at the surface structure of this first sweep trace, and this second top layer and the electric sexual isolation of this second sweep trace are come and be positioned at the contour structures of this second sweep trace, wherein said first bottom and this first top layer overlapping region are one first metal-insulator-metal diodes, this second bottom and this first top layer overlapping region are one second metal-insulator-metal diodes, the 3rd bottom and this second top layer overlapping region are one the 3rd metal-insulator-metal diodes, and the 4th bottom and this second top layer overlapping region are one the 4th metal-insulator-metal diodes.
15. manufacturing as claimed in claim 14 is used to control the method for the active member of LCD, the material of wherein said transparency conducting layer is tin indium oxide or zinc-tin oxide.
16. manufacturing as claimed in claim 14 is in order to the method for the active member of control LCD, the material of wherein said semiconducting insulation layer is a monox, silicon oxynitride, tantalum oxide, or carbonitride alloy.
17. manufacturing as claimed in claim 14 is in order to the method for the active member of control LCD, the material of wherein said metal conducting layer is an aluminium, chromium, or molybdenum.
18. manufacturing as claimed in claim 14 is in order to the method for the active member of control LCD, wherein said pixel capacitors is between this first sweep trace and this second sweep trace.
19. manufacturing as claimed in claim 14 is in order to the method for the active member of control LCD, wherein said first sweep trace and this second sweep trace are parallel to each other.
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| JPH05210113A (en) * | 1992-01-31 | 1993-08-20 | Seiko Epson Corp | Active matrix type liquid crystal display device |
| JPH10142628A (en) * | 1996-11-07 | 1998-05-29 | Matsushita Electric Ind Co Ltd | Active matrix substrate and manufacture thereof |
| CN1515947A (en) * | 1998-02-09 | 2004-07-28 | 精工爱普生株式会社 | Liquid crystal plate and projector |
| US20040174484A1 (en) * | 2001-03-15 | 2004-09-09 | Nec Lcd Technologies, Ltd. | Active matrix type liquid crystal display device and method of manufacturing the same |
| CN1388405A (en) * | 2001-05-29 | 2003-01-01 | Lg.菲利浦Lcd株式会社 | Method for forming liquid crystal layer with ink jet system |
| CN1532616A (en) * | 2003-03-18 | 2004-09-29 | 友达光电股份有限公司 | Method for producing thin film transistor liquid crystal display panel |
| CN1553269A (en) * | 2003-12-03 | 2004-12-08 | 吉林北方彩晶数码电子有限公司 | Producing method for thin-membrane transistor liquid-crystal displaying device |
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| CN1632682A (en) | 2005-06-29 |
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