CN100368596C - Production technology of ceramic outer shell cover plate of crystal oscillator - Google Patents
Production technology of ceramic outer shell cover plate of crystal oscillator Download PDFInfo
- Publication number
- CN100368596C CN100368596C CNB2005101309013A CN200510130901A CN100368596C CN 100368596 C CN100368596 C CN 100368596C CN B2005101309013 A CNB2005101309013 A CN B2005101309013A CN 200510130901 A CN200510130901 A CN 200510130901A CN 100368596 C CN100368596 C CN 100368596C
- Authority
- CN
- China
- Prior art keywords
- cover plate
- plating
- technology
- outer shell
- crystal oscillator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The present invention relates to a production technology of a ceramic outer shell cover plate of a crystal oscillator. The present invention is characterized in that an alloy plate with the thickness of 0.08mm to 0.25mm is taken as an embryo and is packed and sent out of a factory via a punching and forming technology, a light ornament technology, a plating and coating technology and an examining process. In the plating and coating technology, a sieve shaker is adopted so that a product is continuously vibrated in the chemical plating process. The chemical plating formulation in the plating and coating technology is 30 g/L to 40 g/L of nickel chloride, 10 g/L to 15 g/L of sodium hypophosphite, 10 g/L of sodium citrate and 4 g/L to 6 g/L of boric acid, the temperature of the bath is 75 DEG C to 92 DEG C, and the pH value is 6. The production technology has the advantages of novel idea and reasonable design. Practice attests that finished products with mass production have favorable performance and larger popularization and application value.
Description
Technical field
The present invention relates to a kind of production technology of ceramic outer shell cover plate of crystal oscillator.
Background technology
Though surface mount crystal oscillator ceramic outer shell cover plate product is little, and is with high content of technology, nearly tens00000000 demand is arranged at home.But because China does not produce this technology of ceramic outer shell cover plate of crystal oscillator, so the demestic user relies on imported product, thereby price is higher.
Summary of the invention
The purpose of this invention is to provide a kind of production technology of ceramic outer shell cover plate of crystal oscillator, the product that this technology makes not only price is low, corrosion resistance and good, and in produce using soldering and sealing reliability height, the soldering and sealing fusing point is low, helps the encapsulation of quartz wafer and the job stability of raising crystal oscillation product.
The present invention is achieved in that adopting the thick sheet alloy of 0.08～0.25mm is idiosome, be coated with, pack behind the inspection process and dispatch from the factory through punch forming, light decorations, plating, described plating is coated with the process using sieve shaker, make product constantly vibration in the electroless plating process, the electroless plating prescription that described plating is coated with in the technology is: nickelous chloride 30～40g/L; Inferior sodium phosphate 10～15g/L; Trisodium Citrate 10g/L; Boric acid 4～6g/L; 75～92 ℃ of bath temperatures; PH value is 6.
The present invention one is that to adopt sheet alloy be raw material, the 2nd, and adopt the nickel plating alloy technical recipe in conjunction with the riddler that the shakes plating method of planting, make this coverboard corrosion resistance and good.
Specific implementation method
Production technology of ceramic outer shell cover plate of crystal oscillator of the present invention is characterised in that: adopting the thick sheet alloy of 0.08～0.25mm is idiosome, be coated with, pack behind the inspection process and dispatch from the factory through punch forming, light decorations, plating, described plating is coated with the process using sieve shaker, make product constantly vibration in the electroless plating process, the electroless plating prescription that described plating is coated with in the technology is: nickelous chloride 30～40g/L; Inferior sodium phosphate 10～15g/L; Trisodium Citrate 10g/L; Boric acid 4～6g/L; 75～92 ℃ of bath temperatures; PH value is 6.
Above-mentioned sheet alloy is that iron-nickel alloy sheet material or raw material composition carbon content are no more than 0.02, and silicon content is 0.3, and manganese content is 0.4, and nickel content is 29, contains the cobalt amount and be 17 sheet material.
In order to improve coating stability, the iron-nickel alloy sheet material less to specification after described plating is coated with operation and finishes, places under 450～650 ℃ the temperature, adopts hydrogen reducing annealing 7～10 minutes.
Above-mentioned punching out operation can adopt one-shot and high-speed and continuous punch press, and burr is controlled in the 0.015mm, and roughness control is in 0.075mm/25mm.
Above-mentioned light decorations operation adds 10% clean-out system with the horizontal centrifugal grinder of XML, and abrasive material and product ratio are 8: 1, carry out grinding in 20～60 minutes, and burr is controlled in the 0.005mm.
Above-mentioned inspection process is as follows:
(1) material therefor: must be to cut down (KOVAR) material, its coefficient of expansion and 95%Al
2O
3Ceramic phase is approximate.
(2) cover plate processing (punching out) should be smooth, and burr is answered≤0.015mm, and salient point is answered≤0.03mm.
(3) the necessary chemical nickel plating of cover plate, its composition of chemical nickel plating is a nickel-phosphorus alloy, its thickness is 〉=1.5 μ.
(4) the cover plate nickel layer should be silvery white in color, and associativity is good, the bubble that do not have, layering and decortication phenomenon, and cover plate is through three bendings (45 ° are returned crooked again) non-scale.
(5) cover plate hectic fever test: the cover plate nickel layer is through 40 ℃ of temperature, humidity 93 ± 3%, 96 hours non-corroding phenomenons.
Production technique of the present invention is novel, and is reasonable in design, facts have proved that the finished product performance of production in enormous quantities is good, has bigger application value.
Claims (3)
1. production technology of ceramic outer shell cover plate of crystal oscillator, it is characterized in that: adopting the thick sheet alloy of 0.08～0.25mm is idiosome, be coated with, pack behind the inspection process and dispatch from the factory through punch forming, light decorations, plating, described plating is coated with the process using sieve shaker, make product constantly vibration in the electroless plating process, the electroless plating prescription that described plating is coated with in the technology is: nickelous chloride 30～40g/L; Inferior sodium phosphate 10～15g/L; Trisodium Citrate 10g/L; Boric acid 4～6g/L; 75～92 ℃ of bath temperatures; PH value is 6; Described plating is coated with operation adopts hydrogen reducing annealing 7～10 minutes after finishing under 450～650 ℃ temperature; Described punching out operation adopts one-shot and high-speed and continuous punch press, and burr is controlled in the 0.015mm, and roughness control is in 0.075mm/25mm; Described light decorations operation adds 10% clean-out system with the horizontal centrifugal grinder of XML, and abrasive material and product ratio are 8: 1, carry out grinding in 20～60 minutes, and burr is controlled in the 0.005mm.
2. production technology of ceramic outer shell cover plate of crystal oscillator according to claim 1, it is characterized in that: described sheet alloy is that iron-nickel alloy sheet material or raw material composition carbon content are no more than 0.02, and silicon content is 0.3, and manganese content is 0.4, nickel content is 29, contains the cobalt amount and be 17 sheet material.
3. production technology of ceramic outer shell cover plate of crystal oscillator according to claim 1 is characterized in that: described inspection process is as follows:
(1) material therefor: must be to cut down, i.e. KOVAR material, its coefficient of expansion and 95%Al
2O
3Ceramic phase is approximate;
(2) cover plate processing should be smooth, and described processing mode is punching out; Burr is answered≤0.015mm, and salient point is answered≤0.03mm;
(3) the necessary chemical nickel plating of cover plate, its composition of chemical nickel plating is a nickel-phosphorus alloy, its thickness is 〉=1.5 μ;
(4) the cover plate nickel layer should be silvery white in color, and associativity is good, the bubble that do not have, layering and decortication phenomenon, and cover plate is through three crooked non-scales; Describedly be bent into 45 ° for three times and return again crooked;
(5) cover plate hectic fever test: the cover plate nickel layer is through 40 ℃ of temperature, humidity 93 ± 3%, 96 hours non-corroding phenomenons.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101309013A CN100368596C (en) | 2005-12-07 | 2005-12-07 | Production technology of ceramic outer shell cover plate of crystal oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101309013A CN100368596C (en) | 2005-12-07 | 2005-12-07 | Production technology of ceramic outer shell cover plate of crystal oscillator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1786266A CN1786266A (en) | 2006-06-14 |
| CN100368596C true CN100368596C (en) | 2008-02-13 |
Family
ID=36783878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101309013A Active CN100368596C (en) | 2005-12-07 | 2005-12-07 | Production technology of ceramic outer shell cover plate of crystal oscillator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100368596C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105529311B (en) * | 2016-01-11 | 2018-02-23 | 无锡中微高科电子有限公司 | Parallel seam welding alloy cover plate of integrated antenna package and preparation method thereof |
| CN114714160B (en) * | 2022-05-05 | 2023-03-17 | 东莞塘厦泰兴表业制造有限公司 | Shell surface smoothing process |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1396304A (en) * | 2002-06-21 | 2003-02-12 | 郭福春 | Process for preparing high-performance Ni-P alloy solution for chemical plating |
| CN1410592A (en) * | 2001-09-29 | 2003-04-16 | 中国科学院金属研究所 | Method of supersonic chemical plating nickel phosphorus of powder metallurgy material |
-
2005
- 2005-12-07 CN CNB2005101309013A patent/CN100368596C/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1410592A (en) * | 2001-09-29 | 2003-04-16 | 中国科学院金属研究所 | Method of supersonic chemical plating nickel phosphorus of powder metallurgy material |
| CN1396304A (en) * | 2002-06-21 | 2003-02-12 | 郭福春 | Process for preparing high-performance Ni-P alloy solution for chemical plating |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1786266A (en) | 2006-06-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2008064077A3 (en) | Methods for high volume manufacture of group iii-v semiconductor materials | |
| TW200733196A (en) | Vaporizer, semiconductor manufacturing apparatus and manufacturing method thereof | |
| TW200722544A (en) | Method for depositing a vapour deposition material | |
| TW200743677A (en) | Process for preparing a nano-carbon material | |
| TW200729371A (en) | Semiconductor device and manufacturing method of the same, camera module | |
| TW200729365A (en) | Self-assembled interconnection particles | |
| CN100368596C (en) | Production technology of ceramic outer shell cover plate of crystal oscillator | |
| CN101474777A (en) | Technique for producing ultrathin diamond cutting slice of metal anchoring agent | |
| CN103350227A (en) | Large-size high-density tungsten crucible and preparation method thereof | |
| MY159844A (en) | Method of producing glass blank for substrate of information recording medium, substrate for information recording medium, and information recording medium; and manufacturing apparatus for glass blank for subtrate of information recording medium | |
| TW200746350A (en) | Wafer holder, method for producing the same and semiconductor production apparatus | |
| CN107502860B (en) | High-hydrophobicity multi-element doped diamond-like carbon film and preparation method thereof | |
| WO2008073539A3 (en) | Method for producing metal oxide compositions and coated substrates | |
| CN101024213A (en) | Method for producing chip-bearing disc protective layer | |
| CN107331759A (en) | Exempt from the wafer-level packaging method and LED flip chip packaging body of organic gel | |
| CN105126853B (en) | One kind synthesis high-quality gem grade diamond large single crystal catalyst and preparation method thereof | |
| CN107863325A (en) | High-power MOS FET's is fanned out to shape encapsulating structure and its manufacturing process | |
| CN102340945A (en) | Shell and making method thereof | |
| CN109406038A (en) | A kind of flat membrane structure SiAlCN wireless and passive pressure sensor and preparation method thereof | |
| EP1072932A3 (en) | Liquid crystal elemental device, production process thereof and spacer-bearing substrate | |
| CN102969097A (en) | Manufacturing method of mica plate | |
| CN107620030A (en) | A kind of heat radiating type tungsten copper coating material used for electronic packaging and preparation method thereof | |
| CN211555928U (en) | Wafer carrier plate device for preparing CSP device | |
| CN102409294A (en) | Glass substrate thin film sputtering target and preparation method thereof | |
| CN1666969A (en) | Preparation of high performance glass cladded silicon nitride ceramic by hot isostatic pressing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: FUJIAN NANPING SANJIN ELECTRONICS CO., LTD. Assignor: Ning Lihua Contract fulfillment period: 2008.6.30 to 2025.12.7 contract change Contract record no.: 2008350000050 Denomination of invention: Production technology of ceramic outer shell cover plate of crystal oscillator Granted publication date: 20080213 License type: Exclusive license Record date: 2008.9.26 |
|
| LIC | Patent licence contract for exploitation submitted for record |
Free format text: EXCLUSIVE LICENCE; TIME LIMIT OF IMPLEMENTING CONTACT: 2008.6.30 TO 2025.12.7 Name of requester: FUJIAN PROVINCE NANPING CITY SANJIN ELECTRONIC CO Effective date: 20080926 |
|
| ASS | Succession or assignment of patent right |
Owner name: FUJIAN PROVINCE NANPING CITY SANJIN ELECTRONIC CO. Free format text: FORMER OWNER: NING LIHUA Effective date: 20090904 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20090904 Address after: Nanping City, Fujian province No. 233 ring road three gold Electronics Co., Ltd. Patentee after: FUJIAN NANPING SANJIN ELECTRONICS CO., LTD. Address before: Nanping City, Fujian province No. 233 ring road three gold Electronics Co., Ltd. Patentee before: Ning Lihua |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Production technology of ceramic outer shell cover plate of crystal oscillator Effective date of registration: 20130416 Granted publication date: 20080213 Pledgee: Bank of China, Limited by Share Ltd, Nanping branch Pledgor: FUJIAN NANPING SANJIN ELECTRONICS CO., LTD. Registration number: 2013350000007 |
|
| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model |