CN100364131C - Lanthanum, strontium, silver and manganese oxide magneto resistor material and preparation method thereof - Google Patents
Lanthanum, strontium, silver and manganese oxide magneto resistor material and preparation method thereof Download PDFInfo
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- CN100364131C CN100364131C CNB200310109661XA CN200310109661A CN100364131C CN 100364131 C CN100364131 C CN 100364131C CN B200310109661X A CNB200310109661X A CN B200310109661XA CN 200310109661 A CN200310109661 A CN 200310109661A CN 100364131 C CN100364131 C CN 100364131C
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Abstract
The present invention relates to a magneto resistor material and a preparation method thereof, particularly to a lanthanum, strontium, silver and manganese oxide magneto resistor material and a preparation method thereof. The molecular formula of the magneto resistor material is La<x>Sr<y>Ag<z>MnO3; 0.6<=x<=0.7, 0.1<=y<=0.16 and z<=1-x-y. The present invention mainly adopts a sol-gel method to dope a silver element in a Sr position of La<x>Sr<y>MnO3. The present invention overcomes the defects that magnetic fields existing in the prior art have low sensitivity, unfitting temperature regions, narrow temperature regions and magneto resistors at about room temperatures have large variation along with temperatures, etc. in the state of room temperatures, the present invention has the characteristics that the magneto resistance of the magneto resistance material reaches a peak value and has small variation along with temperatures; the sensitivity of magnetic fields is high; the numerical value of magneto resistance is large, etc. moreover, the preparation method has simple technology, low reaction temperature, and the prepared product has stable performance.
Description
Technical field
The present invention relates to a kind of magnetic resistance material and preparation method thereof, particularly a kind of lanthanum-strontium-silver-manganese oxide magnetic resistance material and preparation method thereof.
Background technology
Magneto-resistance effect is meant that external magnetic field causes the effect of resistivity of material great variety.Because magnetic resistance material has great application prospect, be developed at present be used to measure, the multiple general magneto-resistance effect device of control position, angle, speed, rotating speed, electric current etc.Such device has that volume is little, fast, all solid state, contactless, shock-resistant, the anti-dust of action, corrosion-resistant, radioresistance, advantage such as explosion-proof; can be used for multiple adverse circumstances, be specially adapted to vehicle, aircraft, industrial-mineral electric locomotive, relaying protection system, high-power communication transmitter, high power switching power supply, metal-planing machine, planer-type milling machine etc.Wherein, the solid-state current relay of magneto-resistance effect, the monitor current no maximum, lower limit is low far beyond other current relays, uses on lathes such as flat stone mill, and effect is excellent.
At present, the method for preparing magnetic resistance material has a lot, as: solid state reaction, sol-gel process and chemical coprecipitation, wherein sol-gel process has the following advantages: 1. its technical process temperature is low, and the reaction condition gentleness can make the particle diameter materials with smaller; 2. sample granularity narrowly distributing, good uniformity; 3. sample purity height.Therefore, adopting sol-gel process is the method preferably of preparation magnetic resistance material.
The mode that mainly adopts about the research of oxide magneto-resistor material is the form by element substitution, by substituting with different ions on the diverse location, as at parent compound REMnO
3In carry out substituting on the RE position with having the trivalent rare earth element of different ions radius or diad, and with other element such as Al, Fe, Co, Au, Ni etc. carry out alternative on the Mn position.By substituting, make that the material category with CMR effect is more and more.
But, exist 1 in the above-mentioned background technology, magnetic field sensitivity is low, it is higher usually promptly to produce the needed externally-applied magnetic field of CMR phenomenon, is generally several teslas; 2, warm area is improper, and the temperature that produces the CMR effect generally appears at low-temperature space; 3, warm area is narrow, and the temperature range that produces the CMR effect is usually only about several K; 4, magneto-resistor near room temperature with defectives such as variation of temperature are big.These defectives have greatly limited the extensive use of magnetic resistance material.
Summary of the invention
The object of the present invention is to provide a kind of lanthanum-strontium-silver-manganese oxide magnetic resistance material and preparation method thereof, magnetic field sensitivity is low in the prior art, warm area is narrow to overcome, the inappropriate shortcoming of warm area.
General idea of the present invention is:
A kind of lanthanum-strontium-silver-manganese oxide magnetic resistance material, the molecular formula of this magnetic resistance material are La
xSr
yAg
zMnO
3, 0.6≤x≤0.7,0.1≤y≤0.16 wherein, z≤1-x-y.
The preparation method of above-mentioned magnetic resistance material comprises:
(1) with La
2O
3, Sr (NO
3)
2, AgNO
3, Mn (NO
3)
2Carry out weighing with citric acid by the mol ratio of 0.6-0.7: 0.10-0.16: 0.01-0.3: 0.9-1.2: 4-5;
(2) with La
2O
3Put into container, add water 100-150ml and stir;
(3) with Sr (NO
3)
2, AgNO
3, Mn (NO
3)
2Add in the solution of step (2) with citric acid, and the pH value of keeping solution is 2-3;
(4) keeping the temperature of step (3) gained solution is 80-90 ℃, and after solution became dried glue, temperature being risen to 190-210 ℃ became the charcoal shape until this solution again;
(5) behind the charcoal shape thing of grinding above-mentioned steps (4) gained, at 550-650 ℃ of following heat treatment 4-6 hour;
(6) after material that step (5) is prepared grinds once more,, obtain single-phase polycrystal powder at 750-850 ℃ of following heat treatment 9-11 hour;
(7) polycrystal powder that step (5) is prepared at 1350-1450 ℃ of following sintering 11-13 hour, obtains La then at the pressure lower sheeting of 660-680Mpa
xSr
yAg
zMnO
3, 0.6≤x≤0.7,0.1≤y≤0.16 wherein, z≤1-x-y.
The concrete technological parameter and the process conditions of this magnetic resistance material and preparation method thereof are:
Also should add ethylene glycol in step (3) mixed solution, the mol ratio of ethylene glycol and citric acid is 1: 1.0-1.5.
Keeping the temperature of step (3) gained solution in step (4) is 85 ℃, after solution becomes dried glue, temperature is risen to 200 ℃ again, becomes the charcoal shape until this solution.
Behind the charcoal shape thing of grinding steps (4) gained, 600 ℃ of following heat treatments 5 hours.
After the material that step (5) is prepared grinds once more in step (6),, obtain single-phase polycrystal powder 800 ℃ of following heat treatments 10 hours;
In step (7), the polycrystal powder that step (6) is prepared is at the pressure lower sheeting of 675Mpa, 1400 ℃ of following sintering 12 hours, obtains La then
xSr
yAg
zMnO
3, 0.6≤x≤0.7,0.1≤y≤0.16 wherein, z≤1-x-y.
In step (1) with La
2O
3, Sr (NO
3)
2, AgNO
3, Mn (NO
3)
2With citric acid by 0.67: the mol ratio of 0.12-0.14: 0.15-0.19: 0.9-1.2: 4-5 is carried out weighing.
The technological progress that the present invention obtains is:
Resistivity and the temperature variant curve of magneto-resistor according to this magnetic resistance material can be learnt, its magnetoelectricity resistance reaches 25% in room temperature (290-315K) environs about and little with variation of temperature, magnetic field intensity is low, and magneto-resistor numerical value is big, and this has bigger value for practical application; Magneto-resistor according to this magnetic resistance material can learn that with the change curve in magnetic field it has higher magnetic field sensitivity.This preparation method's technology is simple, and reaction temperature is low, and properties of product are stable.
Description of drawings
Accompanying drawing of the present invention has:
Fig. 1 is this magnetic resistance material resistivity and the temperature variant curve chart of magneto-resistor.
Fig. 2 be this magnetic resistance material when temperature is 300K, magneto-resistor is with the curve chart of changes of magnetic field.
Embodiment
Below embodiments of the invention are further described.
A kind of lanthanum-strontium-silver-manganese oxide magnetic resistance material, its molecular formula are La
0.67Sr
0.13Ag
0.20MnO
3
The preparation method of this magnetic resistance material may further comprise the steps:
(1) with La
2O
3, Sr (NO
3)
2, AgNO
3, Mn (NO
3)
2With citric acid by 0.67: 0.15: 0.20: 1.0: 4.5 mol ratio is carried out weighing;
(2) with La
2O
3Put into container, add water 110ml, splash into HNO simultaneously
3Stir, transparent to solution;
(3) with Sr (NO
3)
2, AgNO
3, Mn (NO
3)
2, citric acid and ethylene glycol adds in the solution of step (2) one by one, and the pH value of keeping solution is 2.6;
(4) keeping the temperature of step (3) gained solution is 87 ℃, after solution becomes dried glue, temperature is risen to 205 ℃ again, becomes the charcoal shape until this solution;
(5) behind the charcoal shape thing of grinding steps (4) gained, 560 ℃ of following heat treatments 5.8 hours;
(6) after material that step (5) is prepared grinds once more,, obtain single-phase polycrystal powder 760 ℃ of following heat treatments 11 hours;
(7), 1370 ℃ of following sintering 12.4 hours, obtain this magnetic resistance material then with the polycrystal powder of preparation in the step (6) pressure lower sheeting at 665Mpa.
Claims (2)
1. lanthanum-strontium-silver-manganese oxide magnetic resistance material, the molecular formula that it is characterized in that this magnetic resistance material is La
xSr
yAg
zMnO
3, 0.6≤x≤0.7,0.1≤y≤0.16 wherein, z≤1-x-y.
2. a kind of lanthanum-strontium-silver-manganese oxide magnetic resistance material according to claim 1 is characterized in that x=0.67,0.12≤y≤0.14,0.15≤z≤0.19.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200310109661XA CN100364131C (en) | 2003-11-18 | 2003-11-18 | Lanthanum, strontium, silver and manganese oxide magneto resistor material and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200310109661XA CN100364131C (en) | 2003-11-18 | 2003-11-18 | Lanthanum, strontium, silver and manganese oxide magneto resistor material and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN1545150A CN1545150A (en) | 2004-11-10 |
| CN100364131C true CN100364131C (en) | 2008-01-23 |
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|---|---|---|---|
| CNB200310109661XA Expired - Fee Related CN100364131C (en) | 2003-11-18 | 2003-11-18 | Lanthanum, strontium, silver and manganese oxide magneto resistor material and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101503299B (en) * | 2009-02-06 | 2012-12-26 | 中国计量学院 | Gel injection moulding preparation for gradient material in rotating magnetic field |
| CN102276259A (en) * | 2011-05-09 | 2011-12-14 | 东南大学 | Black conductive ceramic composite material and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1357492A (en) * | 2000-12-14 | 2002-07-10 | 中国科学技术大学 | Amorphous La1-xSrxMnO3-5 compound and its prepn |
| CN2570990Y (en) * | 2002-09-27 | 2003-09-03 | 中国科学院物理研究所 | Doped barium titanate and doped La-Mn-O giant magneto-resistor |
-
2003
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1357492A (en) * | 2000-12-14 | 2002-07-10 | 中国科学技术大学 | Amorphous La1-xSrxMnO3-5 compound and its prepn |
| CN2570990Y (en) * | 2002-09-27 | 2003-09-03 | 中国科学院物理研究所 | Doped barium titanate and doped La-Mn-O giant magneto-resistor |
Non-Patent Citations (4)
| Title |
|---|
| "La_(0.67)Ca_(0.33)MnO_3/Ag/Fe"多层膜的制备及性能研究. 吴桂芳，伍小保，周圣明，赵宗彦.安徽师范大学学报(自然科学版)，第22卷第4期. 1999 * |
| La1-xAgxMnO_3多晶成相过程的研究. 耿滔，张宁.研究与实验. 2003 * |
| Microstructure and inter-grain magnetoresistance in Ag-dopedpolycrystalline La0.67Sr0.33MnO3 thin films. J Li，C K Ong，Q Zhan and D X Li.Journal Of Physics:Condensed Matter,Vol.vol.14 . 2002 * |
| The effect of doping Ag on the microstructure ofLa2/3Sr1/3MnO3 films. Q.Zhan，R.Yu，L.L.He，and D.X.Li.Journal of Materials Research,Vol.Vol.17 No.No.10. 2002 * |
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| CN1545150A (en) | 2004-11-10 |
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Granted publication date: 20080123 Termination date: 20111118 |