CN100361150C - Radio frequency identification marking card with silicon base integrated antenna - Google Patents
Radio frequency identification marking card with silicon base integrated antenna Download PDFInfo
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- CN100361150C CN100361150C CNB2005100774747A CN200510077474A CN100361150C CN 100361150 C CN100361150 C CN 100361150C CN B2005100774747 A CNB2005100774747 A CN B2005100774747A CN 200510077474 A CN200510077474 A CN 200510077474A CN 100361150 C CN100361150 C CN 100361150C
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 31
- 239000010703 silicon Substances 0.000 title claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 238000002955 isolation Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims description 37
- 229910052751 metal Inorganic materials 0.000 claims description 37
- 238000000926 separation method Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 6
- 150000003376 silicon Chemical class 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 238000007789 sealing Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000012938 design process Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
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Abstract
The present invention belongs to the technical field of radio-frequency identification, particularly to a radio-frequency identifying mark card with a silicon base integrated antenna. The present invention comprises a label chip which is integrated with an operating circuit, and an antenna. The present invention is characterized in that the antenna is integrated on the same silicon chip of the label chip. The radio-frequency identifying mark card also comprises an isolation belt which is arranged between the integrated antenna and the operating circuit of a label, and an isolation layer which is arranged between the antenna and a substrate of the silicon chip. At a cost of increasing the area of the chip, namely increasing the manufacturing cost of the chip at a certain degree, the present invention saves the manufacturing cost and the sealing cost of the antenna, and thereby, the cost of the whole radio-frequency identifying mark card is reduced. Besides, the size of the whole radio-frequency identifying mark card is reduced, and therefore, the present invention is convenient to be applied to more occasions where labels with small size are required. The present invention is especially suitable for the radio-frequency identification (RFID) operating at ultra-high frequency (UHF) and above the ultra-high frequency.
Description
Technical field
The invention belongs to the REID field, particularly the structural design of the radio frequency identification marking card of silicon base integrated antenna.
Background technology
(Radio Frequency Identification, RFID) technology is a kind of contactless automatic identification technology to radio-frequency (RF) identification.Rfid system generally by radio frequency identification marking card (or electronic tag, Tag) and reader (Reader) two parts form, in actual applications, because the number of reader is limited, its price can be ignored after the quantity of radio frequency identification marking card reaches certain scale.Present radio frequency identification marking card is made up of label chip that is integrated with operating circuit and discrete antenna, the basic process of its manufacturing is: label chip is processed in chip manufacturing factory, antenna adopts film antenna or other form to make, and the two utilizes packaging technology to link together after finishing making respectively.With regard to cost structure, above-mentioned label chip manufacturing, antenna manufacturing and three processes of antenna encapsulation respectively account for about 1/3rd.In order to reach more massive application, be necessary to consider further to reduce the cost of radio frequency identification marking card.The antenna of radio frequency identification marking card is integrated in silicon chip together with operating circuit, promptly is a kind of approach that reaches this purpose.
Summary of the invention
The objective of the invention is for solving the existing higher problem of radio frequency identification marking card cost, a kind of radio frequency identification marking card that has silicon base integrated antenna is proposed, antenna is integrated on silicon chip, as cost, eliminate the cost of antenna manufacturing and antenna encapsulation with the increase to a certain degree of chip manufacturing cost.
A kind of radio frequency identification marking card that has silicon base integrated antenna that the present invention proposes, comprise label chip and antenna two parts of being integrated with operating circuit, it is characterized in that, described antenna is integrated on the same silicon chip of this label chip, also comprise the isolation strip between the operating circuit that is arranged on described antenna integrated and this label, be arranged on the separation layer between this antenna and this silicon chip substrate.
Technical characterstic of the present invention and effect:
The present invention is making on the silicon chip of radio frequency identification marking card, with the top layer of silicon chip or topmost which floor metal be conductor, according to the requirement of radio frequency identification marking card chip, design antenna with certain radiation characteristic, impedance operator and dimensions.Simultaneously, antenna is with being provided with separation layer between the silicon chip substrate.The vital role of separation layer is to prevent that antenna integrated performance from descending with the coupling between the substrate because of it.The separation layer that the present invention adopts is existing a kind of comparatively desirable isolation structure---a radial separation layer, can certainly adopt the separation layer of other any form structure.
In addition, for the influence of the antenna integrated operating circuit to label chip that reduces to work in high frequency, antenna integrated with also being provided with the isolation strip between the operating circuit of label chip.
Antenna is integrated on the silicon chip, is an existing technology, is mainly used in the communication and the signal transmission of high frequency (usually greater than 10GHz) digital display circuit.In REID because specific conditions such as application bands, energy requirement, in the Antenna Design process, in order to increase the useful area of antenna, on limited silicon area, need antenna to wire carry out around.Around form, the number of turns, spacing, radius, and the factors such as width of lead self become the main factor of decision antenna impedance characteristic, radiation characteristic.For example, straight-flanked ring is around antenna, around radius big more, the number of turns is many more, its receiving area and virtual height are big more, radiation resistance is also big more; But simultaneously, because the length of lead self increases, cause loss resistance to increase, gain descends.In addition, radius is big more, and the number of turns is many more, and the area of whole label and cost all can be thereupon.Therefore in design process, need take all factors into consideration above each side factor, to satisfy application need.For the antenna of other form, also need make similar compromise.
The present invention with chip area be the chip manufacturing cost to a certain degree increase to cost, eliminated the cost of antenna manufacturing and encapsulation, thereby reduced the cost of whole radio frequency identification marking card.In addition, the size of whole radio frequency identification marking card reduces greatly, is convenient to be applied to the occasions that need the small size label more.
The present invention can not increase the complexity and the degree of difficulty of existing C MOS integrated circuit manufacturing process.
Radio frequency identification marking card of the present invention is a passive radio frequency identification mark card, is specially adapted to be operated in ultrahigh frequency (UHF) and with the radio-frequency (RF) identification (RFID) of super band.
Description of drawings
Fig. 1 is a silicon base integrated antenna structural representation of the present invention.Wherein:
Fig. 1 a is that ring-type is antenna integrated, and Fig. 1 b is that wire is antenna integrated.
Fig. 2 is the cross-sectional view of embodiment institute adopting process structure.
Fig. 3 is radio frequency identification marking card embodiment 1 structural representation that has silicon base integrated antenna of the present invention.Wherein:
Fig. 3 a is the silicon base integrated antenna vertical view that present embodiment adopted,
Fig. 3 b is that antenna concerns vertical view with corresponding isolation strip, the position of operating circuit,
Fig. 3 c is the floor map of the radial structure separation layer of present embodiment employing,
Fig. 3 d is a present embodiment general structure diagrammatic cross-section.
Fig. 4 is radio frequency identification marking card embodiment 2 structural representations that have silicon base integrated antenna of the present invention, wherein:
Fig. 4 a is the silicon base integrated antenna vertical view that present embodiment adopted,
Fig. 4 b is that antenna concerns vertical view with corresponding isolation strip, the position of operating circuit,
Fig. 4 c is a present embodiment general structure diagrammatic cross-section.
Embodiment
Below in conjunction with accompanying drawing and embodiments of the invention, further explain specific structural features of the present invention.
A kind of radio frequency identification marking card that has silicon base integrated antenna of the present invention's design, comprise label chip and antenna two parts of being integrated with operating circuit, it is characterized in that, described antenna is integrated on the same silicon chip of this label chip, also comprise the isolation strip between the operating circuit that is arranged on described antenna integrated and this label, be arranged on the separation layer between this antenna and this silicon chip substrate.
Antenna integrated ring-type or the wire antenna of can be of the present invention, as shown in Figure 1, wherein, Fig. 1 a is that ring-type is antenna integrated, metal live width W, adjacent two metal wires apart from S, the parameter that designing antenna when the practical application such as the inside diameter D of ring and number of turns N need be considered; Fig. 1 b is that wire is antenna integrated, metal live width W, adjacent two metal wires apart from S, half arm lengths L, the parameter that designing antenna need be considered when arm exhibition height D was practical application.
Lift below and further specify technical scheme of the present invention, concrete parameter wherein just for example can not be in order to limit protection scope of the present invention.
The three-dimensional sectional structure chart of present embodiment as shown in Figure 2, the technology that is adopted is standard CMOS process, one has 6 layers of metal.Among Fig. 2,1 is the top-level metallic of integrated circuit technology, 2 is the via hole between top-level metallic and the second layer metal, 3 is the integrated circuit technology second layer metal, 4 is the via hole between second layer metal and the three-layer metal, 5 is the integrated circuit technology three-layer metal, 6 is the via hole between three-layer metal and the 4th layer of metal, 7 is the 4th layer of metal of integrated circuit technology, 8 is the via hole between the 4th layer of metal and the layer 5 metal, 9 is integrated circuit technology layer 5 metal, 10 is the via hole between layer 5 metal and layer 6 (bottom) metal, 11 is integrated circuit technology layer 6 metal, 12 is the contact hole between layer 6 metal and polysilicon or the diffusion region, 13 is the used polysilicon of integrated circuit technology, 14 is the well region on the integrated circuit technology silicon substrate, 15 is the diffusion region of integrated circuit technology, 16 is the silicon substrate of integrated circuit technology, 17 is the filled media silicon dioxide in the integrated circuit technology; Wherein: between the metal level 1 and 3, between the metal level 3 and 5, between the metal level 5 and 7, between the metal level 7 and 9, between the metal level 9 and 11, between the metal level 11 and 13, between polysilicon 13 and the diffusion region 15, fill by filled media 17 between layer 6 metal 11 and the diffusion region 15.With also filling between the geometric configuration adjacent on one deck by filled media 17.
In the present embodiment, the planimetric position of each parts concerns that shown in Fig. 3 a, three-dimensional position concerns shown in Fig. 3 b.Among Fig. 3 a, operating circuit 20 and isolation strip 19 from inside to outside place the central space zone of ring-type shown in Fig. 3 c antenna integrated 18 successively.In Fig. 3 b, can see, ring-type antenna integrated 18 is only utilized the top-level metallic 1 shown in Fig. 2, isolation strip 19 need use the nearly all layer (i.e. 3,4,5,6,7,8,9,10,11,12,15 each layers) except that top-level metallic 1,20 of operating circuits are used all layers except that top-level metallic 1 and top layer via hole 2, separation layer 21 only is made of underlying metal 11, and the physical connection on antenna 18 and ground is by contact hole 22 realizations of 16 of underlying metal 11 and substrates.
The profile vertical view of ring-type antenna integrated 18 is shown in Fig. 3 c in the present embodiment.This antenna is a coil antenna, around number of turns N=4, and inside diameter D=600um, metal wire separation S=5um, metal live width W=20um.The implication of each parameter indicates in Fig. 1 a.
In the present embodiment, antenna integrated 18 and silica-based (substrate) 16 between separation layer 21 adopt radial isolation structure, its plane structure chart is shown in Fig. 3 d, grey color part 21 expression underlying metals among the figure, finally all receive signal ground by the contact hole between underlying metal and the substrate 22 (shown in black part is divided among the figure), this physical connection is labeled as 22 in the drawings, and white portion is a white space among the figure.
Embodiment 2
The technology that present embodiment adopted is identical with embodiment 1, and the same Fig. 2 of the sectional axonometric drawing of process structure is not repeated at this.
Unique difference of present embodiment and embodiment 1 is, silicon base integrated antenna adopts wire antenna rather than coil antenna, correspondingly, antenna 23 is also arranged side by side by (up and down) about becoming around encirclement with the position relation of separation layer 24, operating circuit 20, shown in Fig. 4 a.
In the present embodiment, wire is antenna integrated 23, the position of isolation strip 24, operating circuit 20, substrate 16, separation layer 21 is closed and tied up to silica-based profile direction signal shown in Fig. 4 b.
Antenna integrated 23 profile vertical view is shown in Fig. 4 c in the present embodiment.This antenna is a wire antenna, forms metal live width W=10um, metal wire separation S=30um, half arm lengths L=290um, arm exhibition height D=120um by top-level metallic is folding.The implication of each parameter indicates in Fig. 1 .b.
In the present embodiment, the radial isolation structure of separation layer 21 same employings between wire antenna integrated 23 and the substrate 16, its plane structure chart is with Fig. 3 d.
Claims (3)
1. radio frequency identification marking card that has silicon base integrated antenna, comprise label chip and antenna two parts of being integrated with operating circuit, it is characterized in that, described antenna adopts standard CMOS process to be integrated on the same silicon chip of this label chip, also comprise the isolation strip between the operating circuit that is integrated in described antenna and this label chip, be arranged on the separation layer between this antenna and this silicon chip substrate.
2. radio frequency identification marking card as claimed in claim 1 is characterized in that, described antenna is ring-type or wire metal.
3. radio frequency identification marking card as claimed in claim 1 is characterized in that, described separation layer is radial separation layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100774747A CN100361150C (en) | 2005-06-24 | 2005-06-24 | Radio frequency identification marking card with silicon base integrated antenna |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100774747A CN100361150C (en) | 2005-06-24 | 2005-06-24 | Radio frequency identification marking card with silicon base integrated antenna |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1687965A CN1687965A (en) | 2005-10-26 |
| CN100361150C true CN100361150C (en) | 2008-01-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2005100774747A Expired - Fee Related CN100361150C (en) | 2005-06-24 | 2005-06-24 | Radio frequency identification marking card with silicon base integrated antenna |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2126799B1 (en) * | 2007-03-23 | 2018-05-02 | ZIH Corp. | Rfid tag with reduced detuning characteristics |
| US8929805B2 (en) | 2007-10-30 | 2015-01-06 | Nationz Technologies Inc. | System, method, and device for radio frequency communication |
| CN100573568C (en) | 2007-10-30 | 2009-12-23 | 国民技术股份有限公司 | The radio-frequency (RF) IC card device that is used for mobile device |
| CN101453059B (en) * | 2007-11-28 | 2012-06-13 | 纮华电子科技（上海）有限公司 | Radio frequency module integrating active antenna and manufacturing method thereof |
| CN101789072B (en) * | 2009-01-23 | 2012-04-25 | 香港城市大学 | Ultrahigh frequency radio frequency identification device and system thereof |
| CN109598323B (en) * | 2018-11-12 | 2019-11-08 | 晓函安全(北京)科技有限公司 | A kind of chip |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1169568A (en) * | 1996-04-22 | 1998-01-07 | 索尼公司 | Display label and method of producing same |
| CN1213449A (en) * | 1996-01-17 | 1999-04-07 | 格姆普拉斯有限公司 | Contactless electronic module for card of label |
| CN1315027A (en) * | 1998-06-23 | 2001-09-26 | 摩托罗拉公司 | Radio frequency identification tag having a printed antenna and method |
| US6552694B1 (en) * | 1999-07-13 | 2003-04-22 | Shinko Electric Industries Co., Ltd | Semiconductor device and fabrication method thereof |
| JP2003288572A (en) * | 2002-03-27 | 2003-10-10 | Toppan Forms Co Ltd | Rf-id tag for baggage and method for manufacturing the same |
| WO2005004049A1 (en) * | 2003-07-04 | 2005-01-13 | Koninklijke Philips Electronics N.V. | Flexible semiconductor device and identification label |
-
2005
- 2005-06-24 CN CNB2005100774747A patent/CN100361150C/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1213449A (en) * | 1996-01-17 | 1999-04-07 | 格姆普拉斯有限公司 | Contactless electronic module for card of label |
| CN1169568A (en) * | 1996-04-22 | 1998-01-07 | 索尼公司 | Display label and method of producing same |
| CN1315027A (en) * | 1998-06-23 | 2001-09-26 | 摩托罗拉公司 | Radio frequency identification tag having a printed antenna and method |
| US6552694B1 (en) * | 1999-07-13 | 2003-04-22 | Shinko Electric Industries Co., Ltd | Semiconductor device and fabrication method thereof |
| JP2003288572A (en) * | 2002-03-27 | 2003-10-10 | Toppan Forms Co Ltd | Rf-id tag for baggage and method for manufacturing the same |
| WO2005004049A1 (en) * | 2003-07-04 | 2005-01-13 | Koninklijke Philips Electronics N.V. | Flexible semiconductor device and identification label |
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| Publication number | Publication date |
|---|---|
| CN1687965A (en) | 2005-10-26 |
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Assignee: Yangzhou Daoyuan Microelectronics Co., Ltd. Assignor: Tsinghua University Contract record no.: 2011320000563 Denomination of invention: Radio frequency identification marking card with silicon base integrated antenna Granted publication date: 20080109 License type: Common License Open date: 20051026 Record date: 20110413 |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080109 Termination date: 20200624 |
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| CF01 | Termination of patent right due to non-payment of annual fee |