CN100348771C - Method for preparing lead based ferroelectric film - Google Patents
Method for preparing lead based ferroelectric film Download PDFInfo
- Publication number
- CN100348771C CN100348771C CNB2005100212542A CN200510021254A CN100348771C CN 100348771 C CN100348771 C CN 100348771C CN B2005100212542 A CNB2005100212542 A CN B2005100212542A CN 200510021254 A CN200510021254 A CN 200510021254A CN 100348771 C CN100348771 C CN 100348771C
- Authority
- CN
- China
- Prior art keywords
- lead
- ferroelectric thin
- thin film
- sputter
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Semiconductor Memories (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention relates to a method for preparing lead base ferroelectric thin films. In the method, a lead oxide layer is prepared between a substrate and a thin film as a transition layer, and the lead base ferroelectric thin films are prepared by a radio-frequency magnetron sputtering device by the methods of low temperature deposition and subsequent annealing or on-site growth and pressure preservation. In the low temperature deposition and the subsequent annealing, the temperature of the substrate is the room temperature, and a sputtered sample is annealed at the temperature of 450 to 700 DEG C and then cooled down. In the on-site growth, the temperature of the substrate is from 450 to 700 DEG C, and the sputtered sample is placed in a sputtering chamber and then cooled down after pressure preservation for 0 to 60 minutes. The present invention solves the problem that the stoichiometric ratios of the existing ferroelectric thin films are unbalanced; the thin films have the advantages of good crystallization, good uniformity, low surface roughness, high remanent polarization degree, highly preferred orientation, etc., and therefore, the quality of the ferroelectric thin films is greatly improved. The method of the present invention has the advantages of stable process, simple operation, strong practicability, low cost and easy realization of industrial production.
Description
One, technical field
The present invention relates to a kind of preparation method of lead-based ferroelectric thin film, specifically, relate to a kind of utilization at substrate and treat between the sputtered film preparation method of preparation one deck plumbous oxide as the lead-based ferroelectric thin film of transition layer.
Two, background technology
Lead-based ferroelectric thin film belongs to the perovskite structure material, because it has characteristics such as its good ferroelectric, piezoelectricity, pyroelectricity, electric light, acousto-optic and nonlinear optics, at dynamic RAM, film capacitor, ultrasonic detector, film piezo-electric motor, especially has application widely aspect high capacity memory and the uncooled ir pyroelectric detector; Particularly it has advantages such as pyroelectric coefficient is big, specific inductivity is less, loss tangent is low, is the ideal material of preparation uncooled ir pyroelectric detector and heat imaging device.Utilize lead-based ferroelectric thin film make pyroelectric detector have need not freeze, can work at normal temperatures, spectral response does not have the wavelength selectivity, highly sensitive, response is fast, the integrated level advantages of higher.Because lead-based ferroelectric thin film has These characteristics, therefore, for a period of time, to the research of lead-based ferroelectric thin film material, at home and abroad all is forward position and popular topic.
At present, the preparation lead-based ferroelectric thin film is directly at Pt/Ti/SiO mostly
2Adopt the rf magnetron sputtering device to carry out sputter on the/Si substrate and prepare lead-based ferroelectric thin film; In preparation process, because plumbous fusing point is low, be 327 ℃, volatile, thus cause the stoichiometric ratio of lead-based ferroelectric thin film unbalance; On the other hand, the difficult acquisition of this method good uniformity, the lead-based ferroelectric thin film that surfaceness is low finally cause the decline of lead-based ferroelectric thin film quality.
Three, summary of the invention
At prior art directly at Pt/Ti/SiO
2Existing defective among the deposit lead based ferroelectric film preparation method on the/Si substrate, purpose of the present invention are intended to propose a kind of novel method of lead-based ferroelectric thin film preparation.This method has not only been improved the unbalance problem of lead-based ferroelectric thin film stoichiometric ratio in the prior art, and the lead-based ferroelectric thin film of preparation also has advantages of good crystallization, good uniformity, surfaceness low, and height preferred orientation and higher advantages such as remnant polarization, thereby improved the lead-based ferroelectric thin film quality greatly.
Basic thought of the present invention is to utilize at Pt/Ti/SiO
2/ Si substrate and treat that preparation one deck plumbous oxide adopt existing magnetic control sputtering device by sputter under the low temperature, and subsequent anneal is handled as transition layer between the lead-based ferroelectric thin film of sputter; Or by growth sputter on the throne, and follow-up pressurize processing, reach the purpose that obtains high-quality lead-based ferroelectric thin film.
Purpose of the present invention realizes by the technical scheme that is made of following measure.
The preparation method of lead-based ferroelectric thin film of the present invention adopts the rf magnetron sputtering device, and main step of preparation process is as follows successively:
(1) target and substrate are installed
At first will be separately fixed on the target position of sputter equipment, substrate surface after clean, is fixed on the substrate position of sputter equipment, adjust the distance of target and substrate with the lead-oxide target and the lead base ferroelectric ceramic(s) target of traditional technology processing;
(2) preparation plumbous oxide transition layer
For preparation one deck plumbous oxide between substrate and film as transition layer, be at substrate and treat supplemental lead between the lead-based ferroelectric thin film of sputter, again with rf magnetron sputtering device sputter plumbous oxide;
(3) preparation lead-based ferroelectric thin film
By low temperature depositing, or by growth on the throne, sputter lead-based ferroelectric thin film on the plumbous oxide transition layer;
(4) lead-based ferroelectric thin film aftertreatment
With the lead-based ferroelectric thin film that sputter finishes, carry out subsequent anneal and handle, or carry out follow-up pressurize and handle, slowly cool to room temperature then, promptly obtain high-quality lead-based ferroelectric thin film.
In such scheme, for making the good lead-based ferroelectric thin film of preparation quality, the thickness of the plumbous transition layer of supplemental is 10-100nm.
In such scheme, said by low temperature depositing, is under the room temperature promptly at substrate temperature, in sputter sputter lead-based ferroelectric thin film on the substrate of plumbous oxide transition layer.
In such scheme, said by growth on the throne, be under 450-700 ℃ promptly at substrate temperature, in sputter sputter lead-based ferroelectric thin film on the substrate of plumbous oxide transition layer.
In such scheme, the said subsequent anneal of carrying out is handled, be to take out by the lead-based ferroelectric thin film sample that the low temperature depositing sputter finishes, be placed in the retort furnace, 450-700 ℃ of annealing down under air atmosphere, annealing time is 2-60 minute, slowly cools to room temperature then, promptly gets high-quality lead-based ferroelectric thin film.
In such scheme, saidly carry out follow-up pressurize and handle, be that the lead-based ferroelectric thin film sample that will finish by growth sputter on the throne kept in sputtering chamber air pressure 0-60 minute, slowly cool to room temperature then, promptly get high-quality lead-based ferroelectric thin film.
In such scheme, at substrate and treat between the sputtered film to replenish the plumbous oxide transition layer of different thickness, can prepare the lead-based ferroelectric thin film of needed different thickness.
The feature general formula that adopts plumbous oxide to make the lead-based ferroelectric thin film of transition layer preparation is lead-based ferroelectric thin film/PbO/Pt/Ti/SiO
2/ Si, wherein lead-based ferroelectric thin film can be individual layer and multiwalled lead-based ferroelectric thin film, and for example the individual layer lead-based ferroelectric thin film is PLT, PZT, and the multilayer lead-based ferroelectric thin film is PZT/PLT/PZT, PLT/PZT/PLT etc.Preparation method of the present invention is applicable to the lead-based ferroelectric thin film system that scope is wider.
The present invention compared with prior art has following characteristics:
1, the present invention has improved the ununiformity of the unbalance and film of the prior art stoichiometric ratio that directly the deposit lead based ferroelectric film causes on substrate.
2, not only crystal property is good for the lead-based ferroelectric thin film of the present invention's preparation, greatly reduces the surfaceness of film, and the r.m.s. roughness on the lead-based ferroelectric thin film surface of preparation is lower, but also has the characteristics of remnant polarization height and height preferred orientation.
3, the present invention has process stabilizing, simple to operate, practical and cost is low, be easy to realize advantages such as suitability for industrialized production.
Four, description of drawings
Fig. 1 is lead-based ferroelectric thin film atomic force microscope (AFM) collection of illustrative plates of the present invention's preparation.
Fig. 2 is X-ray diffraction (XRD) collection of illustrative plates of the lead-based ferroelectric thin film of the present invention's preparation.
Fig. 3 is atomic force microscope (AFM) collection of illustrative plates of the ferroelectric membranc of embodiment 2.
Fig. 4 is X-ray diffraction (XRD) collection of illustrative plates of the ferroelectric membranc of embodiment 2.
Fig. 5 is atomic force microscope (AFM) collection of illustrative plates of the ferroelectric membranc of embodiment 3.
Fig. 6 is X-ray diffraction (XRD) collection of illustrative plates of the ferroelectric membranc of embodiment 3.
Fig. 7 is the ferroelectric hysteresis loop collection of illustrative plates of the ferroelectric membranc of embodiment 3.
Five, embodiment
Also the present invention is described in further detail in conjunction with the accompanying drawings below by embodiment, but content of the present invention is not limited only to content related among the embodiment.
The sputtering condition of the used rf magnetron sputtering device of the present invention: used atmosphere: oxygen is argon-mixed: O
2: Ar=1: 1～4.5, total gas pressure is 0.2Pa～3.5Pa; Base vacuum is 1-6 * 10
-4Pa; Substrate rotates with 5～30 rev/mins of speed during sputter.The sputtering power of the plumbous transition layer of supplemental is 30～80W, and sputter rate is controlled at 3～15nm/min.
Low temperature depositing and subsequent anneal, the sputtering power of sputter lead-based ferroelectric thin film is 40～120W, sputter rate is controlled at 3～15nm/min.
Growth on the throne and follow-up pressurize, the sputtering power of sputter lead-based ferroelectric thin film is 40～120W, sputter rate is controlled at 3～15nm/min.
Embodiment 1:
At substrate and treat the plumbous transition layer of supplemental between the lead-based ferroelectric thin film of sputter, by low temperature depositing and subsequent anneal thereof, preparation lanthanum lead titanate [Pb
1-x, La
x] Ti
1-x/4O
3] film:
(PbO) makes raw material with plumbous oxide, by conventional machining process the PbO raw material is processed into the plumbous oxide target that diameter is 6cm; With plumbous oxide (PbO), titanium oxide (TiO
2) and lanthanum trioxide (La
2O
3) be raw material, press general formula (Pb
1-xLa
x) Ti
1-x/4O
3Stoichiometric ratio weighing PbO, the TiO of (brief note is PLT)+0.1PbO (x=10%)
2, La
2O
3Raw material, by traditional ceramic preparation technology with PbO, TiO
2, La
2O
3Raw material is processed into the PLT ceramic target that diameter is 6cm; Lead-oxide target and PLT ceramic target are separately fixed on the target position of sputter equipment, use Pt/Ti/SiO
2/ Si makes substrate, and its area is 2cm * 2cm, and substrate with toluene ultrasonic cleaning 5 minutes, was used the acetone ultrasonic cleaning 5 minutes again, uses the dehydrated alcohol ultrasonic cleaning at last 5 minutes, and the substrate after cleaning is fixed on the substrate position of sputter equipment.
The JGP560C10 type high vacuum multifunctional magnetic control sputtering device that uses Shenyang Scientific Instrument Factory, Chinese Academy of Sciences to produce prepares the PLT film.This device base vacuum is 3 * 10
-4Pa, sputtering pressure are 0.5Pa～2.5Pa, and airshed is O
2: 10sccm, Ar:40sccm.Substrate and ceramic target spacing are 5cm, and substrate temperature is a room temperature, during sputter, the sample rotational velocity is 10 rev/mins, is 55W at sputtering power earlier, and sputter plumbous oxide transition region thickness is 15nm on substrate, be 80W at sputtering power then, sputter PLT film again on the plumbous oxide transition layer, its sputter thickness is 350nm, the sample that then sputter is finished takes out, put into retort furnace, annealed 10 minutes down at 700 ℃, be cooled to room temperature again, promptly get high-quality PLT ferroelectric membranc.To the scanning of PLT ferroelectric membranc, sweep limit is 0.5 μ m * 0.5 μ m, learns that from atomic force microscope (AFM) spectrogram of Fig. 1 the r.m.s. roughness of PLT film is 3.07nm through atomic force microscope (AFM); From the collection of illustrative plates of the X-ray diffraction (XRD) of Fig. 2, the PLT film has formed the film of the complete perovskite structure of polycrystalline as can be seen.
Embodiment 2:
At substrate and treat the plumbous transition layer of supplemental between the lead-based ferroelectric thin film of sputter, by low temperature depositing and subsequent anneal thereof, preparation Pb-based lanthanumdoped zirconate titanates [PbZr
xTi
1-xO
3(x=20%)] film:
Make raw material with plumbous oxide, this raw material is processed into the plumbous oxide target that diameter is 6cm by conventional machining process; With plumbous oxide (PbO), titanium oxide (TiO
2) and zirconium white (ZrO
2) be raw material, press general formula PbZr
xTi
1-xO
3Stoichiometric ratio weighing PbO, the TiO of+0.1PbO (x=20%) [brief note is PZT]
2, ZrO
2Raw material is processed into the PZT ceramic target that diameter is 6cm by traditional ceramic preparation technology with this raw material; Lead-oxide target and PZT ceramic target are separately fixed on the target position of sputter equipment, use Pt/Ti/SiO
2/ Si makes substrate, and its area is 2cm * 2cm, and substrate with toluene ultrasonic cleaning 5 minutes, was used the acetone ultrasonic cleaning 5 minutes again, uses the dehydrated alcohol ultrasonic cleaning at last 5 minutes, and the substrate after cleaning is fixed on the substrate position of sputter equipment.
The JGP560C10 type high vacuum multipotency magnetic control sputtering device that utilizes Shenyang Scientific Instrument Factory, Chinese Academy of Sciences to produce prepares pzt thin film.This device base vacuum is 3 * 10
-4Pa, sputtering pressure are 0.5Pa～2.5Pa, and airshed is O
2: 10sccm, Ar:40sccm.Substrate and ceramic target spacing are 5cm, and substrate temperature is a room temperature; The sample rotational velocity is 10 rev/mins, be 50W at sputtering power earlier, sputter plumbous oxide transition region thickness is 15nm on substrate, is 80W at sputtering power then, sputter pzt thin film again on the plumbous oxide transition layer, its sputter thickness is 350nm, the sample that then sputter is finished takes out, and puts into retort furnace, anneals 10 minutes down at 700 ℃, be cooled to room temperature again, promptly get high-quality PZT ferroelectric membranc.To the scanning of PZT ferroelectric membranc, sweep limit is 0.5 μ m * 0.5 μ m, learns that from atomic force microscope (AFM) collection of illustrative plates of Fig. 3 the r.m.s. roughness of pzt thin film is 3.38nm through atomic force microscope; From the X-ray diffraction XRD figure spectrum of Fig. 4, pzt thin film has formed the film of the complete perovskite structure of polycrystalline as can be seen.
Embodiment 3:
At substrate and treat the plumbous transition layer of supplemental between the lead-based ferroelectric thin film of sputter, by growth on the throne, and follow-up pressurize, preparation lanthanum lead titanate [Pb
1-x, La
x] Ti
1-x/4O
3]] film:
Make raw material with plumbous oxide, this raw material is processed into the plumbous oxide target that diameter is 6cm by traditional technology; With plumbous oxide (PbO), titanium oxide (TiO
2) and lanthanum trioxide (La
2O
3) be raw material, press general formula (Pb
1-xLa
x) Ti
1-x/4O
3Stoichiometric ratio weighing PbO, the TiO of (brief note is PLT)+0.1PbO (x=10%)
2, La
2O
3Raw material is processed into the PLT ceramic target that diameter is 6cm by traditional ceramic preparation technology with raw material; Lead-oxide target and PLT ceramic target are separately fixed on the target position of sputter equipment, use Pt/Ti/SiO
2/ Si makes substrate, and its area is 2cm * 2cm, and substrate with toluene ultrasonic cleaning 5 minutes, was used the acetone ultrasonic cleaning 5 minutes again, uses the dehydrated alcohol ultrasonic cleaning at last 5 minutes, and the substrate after cleaning is fixed on the substrate position of sputter equipment.
The JGP560C10 type high vacuum multifunctional magnetic control sputtering device that utilizes Shenyang Scientific Instrument Factory, Chinese Academy of Sciences to produce prepares the PLT film.This installs base vacuum 3 * 10
-4Pa, air pressure are 0.5Pa, and airshed is O
2: 10sccm, Ar:40sccm, adjusting substrate and target spacing is 5cm, the sample rotational velocity is 10 rev/mins.Elder generation's heated substrate temperature is 650 ℃, at sputtering power is under the 55W condition, sputter plumbous oxide transition region thickness is 30nm on substrate, be under the 80W condition then then at sputtering power, sputter PLT film again on the plumbous oxide transition layer, its sputter thickness is about 700nm, after sputter finishes, under the atmosphere of sputter, promptly in sputtering chamber, protected air pressure 30 minutes, promptly get high-quality PLT ferroelectric membranc.Test this sample by XRD, show that growing and preparing on the throne goes out the film of (100) height preferred orientation.Fig. 5 is that sweep limit is 0.5 μ m * 0.5 μ m through the collection of illustrative plates of the PLT film of 650 ℃ of growths on the throne of atomic force microscope (AFM) scanning, and its r.m.s. roughness is 3.02nm; Fig. 6 is the XRD figure spectrum of the PLT film of 650 ℃ of growths on the throne, and this film is the film of height (100) orientation as can be seen from FIG.; Fig. 7 is the ferroelectric hysteresis loop of 650 ℃ of growth PLT films on the throne, and its remnant polarization is 11.1 μ C/cm
2
Claims (7)
1, a kind of preparation method of lead-based ferroelectric thin film adopts the rf magnetron sputtering device, it is characterized in that step of preparation process is as follows successively:
(1) target and substrate are installed
At first will be separately fixed on the target position of sputter equipment, substrate surface after clean, is fixed on the substrate position of sputter equipment, adjust the distance of target and substrate then with the lead-oxide target and the lead base ferroelectric ceramic(s) target of traditional technology processing;
(2) sputter plumbous oxide transition layer
Preparation one deck plumbous oxide is as transition layer between substrate and film, is at substrate and treats supplemental lead between the lead-based ferroelectric thin film of sputter, again with rf magnetron sputtering device sputter plumbous oxide on substrate;
(3) sputter lead-based ferroelectric thin film
By room temperature deposition, or growth on the throne, sputter lead-based ferroelectric thin film on the plumbous oxide transition layer;
(4) lead-based ferroelectric thin film is carried out aftertreatment
The lead-based ferroelectric thin film that sputter finishes is handled by subsequent anneal, or follow-up pressurize processing, slowly cools to room temperature then, promptly gets lead-based ferroelectric thin film.
2, method according to claim 1 is characterized in that the plumbous transition region thickness of supplemental is 10-100nm.
3, method according to claim 1 is characterized in that said room temperature deposition, is under the room temperature at substrate temperature promptly, in sputter sputter lead-based ferroelectric thin film on the substrate of plumbous oxide transition layer.
4, method according to claim 1 is characterized in that said growth on the throne, is under 450-700 ℃ at substrate temperature promptly, in sputter sputter lead-based ferroelectric thin film on the substrate of plumbous oxide transition layer.
5, according to claim 1 or 3 described methods, it is characterized in that the subsequent anneal processing, be to take out by the lead-based ferroelectric thin film sample that the room temperature deposition sputter finishes, be placed in the retort furnace, under air atmosphere 450-700 ℃ of annealing, annealing time is 2-60 minute, slowly cools to room temperature then, promptly gets lead-based ferroelectric thin film.
6, according to claim 1 or 4 described methods, it is characterized in that follow-up pressurize processing, be that the lead-based ferroelectric thin film sample that will finish by growth sputter on the throne kept in sputtering chamber air pressure 0-60 minute, slowly cool to room temperature then, promptly get lead-based ferroelectric thin film.
7, method according to claim 1 is characterized in that at substrate and treats that the plumbous oxide that replenishes different thickness between the film of sputter makes transition layer, can prepare the lead-based ferroelectric thin film of different thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100212542A CN100348771C (en) | 2005-07-13 | 2005-07-13 | Method for preparing lead based ferroelectric film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100212542A CN100348771C (en) | 2005-07-13 | 2005-07-13 | Method for preparing lead based ferroelectric film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1727518A CN1727518A (en) | 2006-02-01 |
| CN100348771C true CN100348771C (en) | 2007-11-14 |
Family
ID=35927035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100212542A Expired - Fee Related CN100348771C (en) | 2005-07-13 | 2005-07-13 | Method for preparing lead based ferroelectric film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100348771C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102174697B (en) * | 2011-03-04 | 2013-06-12 | 电子科技大学 | Method for growing oxide ferroelectric film on metallic nickel substrate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1184863A (en) * | 1996-12-13 | 1998-06-17 | 南京大学 | Method and apparatus for orientation growth of lithium ferrous niobate by electric field induction |
| CN1303952A (en) * | 2000-01-11 | 2001-07-18 | 中国科学院物理研究所 | Method for growing single-orientation lead zirconate titanate film on silicon substrate |
| CN1342783A (en) * | 2001-09-14 | 2002-04-03 | 中国科学院上海硅酸盐研究所 | Process for preparing functional gradient film of lead zirconate titanate ceramics |
-
2005
- 2005-07-13 CN CNB2005100212542A patent/CN100348771C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1184863A (en) * | 1996-12-13 | 1998-06-17 | 南京大学 | Method and apparatus for orientation growth of lithium ferrous niobate by electric field induction |
| CN1303952A (en) * | 2000-01-11 | 2001-07-18 | 中国科学院物理研究所 | Method for growing single-orientation lead zirconate titanate film on silicon substrate |
| CN1342783A (en) * | 2001-09-14 | 2002-04-03 | 中国科学院上海硅酸盐研究所 | Process for preparing functional gradient film of lead zirconate titanate ceramics |
Non-Patent Citations (2)
| Title |
|---|
| (Pb，La)TiO3铁电薄膜的表面态分析 朱基亮等.功能材料，第32卷第2期 2001 * |
| 射频磁控室温溅射(Pb，La)TiO3薄膜退火前后的原子力显微镜分析 朱基亮等.功能材料，第31卷第6期 2000 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1727518A (en) | 2006-02-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101717272B (en) | Preparation method of lead zirconate titanate thick film with preferable grain orientation (100) | |
| CN104609856A (en) | Preparation method of highly preferred oriented sodium bismuth titanate-barium titanate lead-free piezoelectric thin film | |
| Wang et al. | Development of phases and texture in sol-gel derived lead zirconate titanate thin films prepared by three-step heat-treatment process | |
| CN100522885C (en) | Low-temperature preparation method for high zirconium content lead series composite antiferroelectric thin film | |
| CN100365776C (en) | Production of thin-film ferroelectric materials with lead zirconate-titanate with reading circuit integration | |
| CN111423231A (en) | Ternary system relaxor ferroelectric film material and preparation method and application thereof | |
| US8877520B2 (en) | Ferroelectric film containing a perovskite structure oxide and method for manufacturing a ferroelectric film | |
| CN102731107A (en) | Method for preparing Mn-doped bismuth sodium titanate-barium titanate film | |
| CN100348771C (en) | Method for preparing lead based ferroelectric film | |
| JP2688872B2 (en) | Method for producing PZT thin film and sputtering apparatus | |
| CN1303952A (en) | Method for growing single-orientation lead zirconate titanate film on silicon substrate | |
| JP6149222B2 (en) | Ferroelectric film manufacturing apparatus and ferroelectric film manufacturing method | |
| CN109761605A (en) | One kind having the PZT thin film and preparation method thereof of (100) preferable grain orientation | |
| Zeng et al. | Sol‐Gel Preparation of Pb (Zr0. 50Ti0. 50) O3 Ferroelectric Thin Films Using Zirconium Oxynitrate as the Zirconium Source | |
| CN107287563A (en) | A kind of extension stronitum stannate cobalt thin film and preparation method thereof | |
| CN112635670A (en) | Yttrium-doped hafnium oxide-based ferroelectric film material and preparation method and application thereof | |
| JP2718414B2 (en) | Method for producing lead titanate thin film | |
| Mercado et al. | Smart thin film TiNi/piezoelectric heterostructures | |
| Lu et al. | Ferroelectric lead zirconate titanate thin films synthesized via a high-pressure crystallization process | |
| Lee et al. | Phase development of radio-frequency magnetron sputter-deposited Pb (Mg 1/3 Nb 2/3) O 3–PbTiO 3 (90/10) thin films | |
| CN113215538A (en) | high-Curie-point silicon substrate ferroelectric film material and preparation and application thereof | |
| CN114438450A (en) | Perovskite thin film and low-temperature preparation method and device thereof | |
| Zhang et al. | (001)-oriented LaNiO3 bottom electrodes and (001)-textured ferroelectric thin films on LaNiO3 | |
| Wang et al. | Preparation and properties of SrBi2. 2 Ta2O9 thin film | |
| JP2007036206A (en) | Manufacturing method of ferroelectric film structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20071114 Termination date: 20100713 |