CN100342525C - Control circuit for organic electroluminescent diode and producing method thereof - Google Patents
Control circuit for organic electroluminescent diode and producing method thereof Download PDFInfo
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- CN100342525C CN100342525C CNB2005101184111A CN200510118411A CN100342525C CN 100342525 C CN100342525 C CN 100342525C CN B2005101184111 A CNB2005101184111 A CN B2005101184111A CN 200510118411 A CN200510118411 A CN 200510118411A CN 100342525 C CN100342525 C CN 100342525C
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Abstract
The present invention discloses a control circuit of an organic electroluminescent diode, which comprises a first thin film transistor, a thin film transistor and a capacitor, wherein a grid electrode of the first thin film transistor is electrically connected with a scan line; a first source electrode or drain electrode of the first thin film transistor is electrically connected with a data line; a grid electrode of a second thin film transistor is electrically connected with a second source electrode or drain electrode of the first thin film transistor; a third source electrode or drain electrode of the second thin film transistor is electrically connected with working voltage; a fourth source electrode or drain electrode of the second thin film transistor is electrically connected with the organic electroluminescent diode. One end of the capacitor is electrically connected with reference voltage, and the other end of the capacitor is electrically connected with the grid electrode of the second thin film transistor. The thickness or the material of a dielectric layer of the capacitor is different from the thickness or the material of the dielectric layer of one of the grid electrodes of the first thin film transistor and the second thin film transistor.
Description
Technical field
The invention relates to a kind of method of making organic electroluminescent LED, and particularly relevant for a kind of method of making the control circuit of organic electroluminescent LED.
Background technology
Organic electroluminescent LED (Organic Electro-Luminescent Display; OLED) because of itself have low cost, life-span length, low driving voltage, reaction speed is fast, luminous efficiency is good, heatproof difference and characteristics such as vibration strength, high visual angle and thin thickness, therefore in recent years, manufacturer's number of the assembly research and development of input organic electroluminescent LED is more and more many, the development of research and development speed is considerably quick, following present Thin Film Transistor-LCD (Thin Film Transistor Liquid CrystalDisplay, the TFT-LCD) dominant position of being played the part of of very likely replacing.
With reference to the 1A～1E figure, it shows the profile of manufacturing process of the control circuit of traditional organic electroluminescent LED.In 1A figure, at first form the bottom electrode 124 of first grid 122, electric capacity and second grid 126 on insulating substrate 110.
Then in 1B figure, at first form bottom electrode 124 and second grid 126 that dielectric layer 130 covers first grids 122, electric capacity, with as the gate dielectric of the first film transistor AND gate second thin-film transistor and the dielectric layer of electric capacity.Define first channel region 142 and second channel region 146 again.
In 1C figure, define etch stop layer 150.This etch stop layer 150 is positioned at the top of the grid of the transistorized grid of part the first film and second thin-film transistor, to avoid the influence of subsequent etch technology.
With reference to 1D figure, at first form doping semiconductor layer 160 and be covered on the insulating substrate 110.Then this doping semiconductor layer 160 and dielectric layer 130 of patterning forming guide hole 180 on the grid of part second thin-film transistor, and forms the source/drain of the first film transistor AND gate second thin-film transistor of part.
Last with reference to 1E figure, then form conductor layer 170 and be covered on the insulating substrate 110.This conductor layer 170 of patterning with the source/drain of formation the first film transistor AND gate second thin-film transistor, and forms connecting line to be electrically connected the first film transistor drain, the top electrode of electric capacity and the grid of second thin-film transistor again.
From the above, in the technology of the control circuit of traditional organic electroluminescent LED, etch stop layer separates making with guide hole.This will increase processing step, and then cause cost to increase and yield decline.
In addition, in the control circuit of traditional organic electroluminescent LED, the gate dielectric of the dielectric layer of electric capacity and the first film transistor and second thin-film transistor forms simultaneously.Therefore, when designer's desire changed the capacitance of electric capacity, the electrical and geometric properties of the first film transistor AND gate second thin-film transistor also will be affected simultaneously.This is with limit design person's design space.
So a kind of control circuit that reduces the organic electroluminescent LED of processing step and increase design space is that organic electric-excitation luminescent shows that the manufacturer of science and technology is required.
Summary of the invention
Therefore an object of the present invention is to provide a kind of manufacture method of control circuit of organic electroluminescent LED, Using such method can reduce processing step, to reduce manufacturing cost and to increase yield.
Another object of the present invention provides a kind of manufacture method of control circuit of organic electroluminescent LED, and Using such method can avoid the capacitance that electrically changes electric capacity because of the designer of the first transistor and transistor seconds to change.
Another purpose of the present invention provides a kind of manufacture method of control circuit of organic electroluminescent LED, and Using such method is when the capacitance of change electric capacity, and therefore the geometric properties of the first transistor and transistor seconds must not change.
According to above-mentioned purpose of the present invention, a kind of control circuit of organic electroluminescent LED is proposed.The control circuit of this organic electroluminescent LED comprises the first film transistor, second thin-film transistor and electric capacity.Wherein, the transistorized grid of the first film is electrically connected scan line, and first source/drain of the first film transistor is electrically connected data wire.Transistorized second source/drain of grid electrical ties the first film of second thin-film transistor, the 3rd source/drain of second thin-film transistor is electrically connected operating voltage, and the 4th source/drain of second thin-film transistor is electrically connected organic electroluminescent LED.One end of electric capacity is electrically connected a reference voltage, and the other end is electrically connected the grid of second thin-film transistor.Differ from the thickness or the material of the gate dielectric of the first film transistor and second thin-film transistor one of in the thickness of the dielectric layer of this electric capacity or the material.
According to one embodiment of the present invention, wherein above-mentioned electric capacity can also have the electric capacity stack layer.This electric capacity stack layer is between electrode under the electric capacity and dielectric layer.In addition, the electric capacity stack layer can also comprise a storehouse dielectric layer, and this storehouse dielectric layer is positioned on the bottom electrode of electric capacity, and the material of this storehouse dielectric layer is identical with the material and the thickness of the gate dielectric of thickness and the first film transistor and second thin-film transistor.
According to purpose of the present invention, a kind of manufacture method of control circuit of organic electroluminescent LED is proposed.This manufacture method comprises the following step.At first, the bottom electrode of formation first grid, electric capacity and second grid are on insulating substrate.Then, form the first grid dielectric layer and first channel region in reaching the second grid dielectric layer and second channel region on the part first grid on the part second grid.Then, form etch stop layer and be covered on the insulating substrate, the pattern etched stop layer forms the source/drain contact with the part upper surface that exposes first channel region and second channel region to be applicable to, and forms guide hole in the part upper surface of second grid again.Then, forming doping semiconductor layer and conductor layer in regular turn is covered on the insulating substrate, patterning conductor layer and doping semiconductor layer again, with form source/drain on first channel region and second channel region, form connecting line to be electrically connected the top electrode of drain electrode and second grid and formation electric capacity on first channel region.
According to one embodiment of the present invention, before forming etch stop layer, can form the electric capacity stack layer on the bottom electrode of electric capacity.This electric capacity stack layer can have the storehouse dielectric layer, and wherein the material of storehouse dielectric layer is identical with the material and the thickness of thickness and first grid dielectric layer and second grid dielectric layer.
As previously discussed, the present invention defines etch stop layer and guide hole simultaneously, so the required mask count of technology of the control circuit of organic electroluminescent LED is reduced together.Because the cost of manufacture costliness of mask, the step of exposure imaging not only quite time-consuming and but also the danger of alignment error is arranged, so few one mask can be saved a large amount of production costs and production time, and can promote the yield of product.In addition, in the control circuit of the organic electroluminescent LED that application the present invention manufactures, the dielectric layer of electric capacity can be different with the gate dielectric of the first transistor or transistor seconds.So when the designer changed the capacitance of electric capacity, therefore electrical the and geometric properties of the first transistor and transistor seconds must not change.
Description of drawings
For above and other objects of the present invention, feature, advantage and embodiment can be become apparent, accompanying drawing is described in detail as follows:
1A-1E illustrates the profile of manufacturing process of the control circuit of traditional organic electroluminescent LED.
2A-2D illustrates the profile according to a kind of manufacturing process of the control circuit of the organic electroluminescent LED of one embodiment of the present invention.
3A-3D illustrates the profile according to a kind of manufacturing process of the control circuit of the organic electroluminescent LED of one embodiment of the present invention.
4A-4D illustrates the profile according to a kind of manufacturing process of the control circuit of the organic electroluminescent LED of one embodiment of the present invention.
[primary clustering symbol description]
110,210,310,410: insulating substrate
122,222,322,422: first grid
124,224,324,424: bottom electrode
126,226,326,426: second grid
130: dielectric layer
232,332,432: the first grid dielectric layer
236,336,436: the second grid dielectric layer
142,242,342,442: the first channel regions
146,246,346,446: the second channel regions
150,250,350,450: etch stop layer
160,260,360,460: doping semiconductor layer
170,270,370,470: conductor layer 180,280,380,480: guide hole
334,434: storehouse dielectric layer 444: the stacked semiconductor layer
Embodiment
Below will and describe in detail spirit of the present invention clearly will be described with icon, as those of ordinary skill in the art after understanding the preferred embodiments of the present invention, when can be by the technology that the present invention instructed, change and modification, it does not break away from spirit of the present invention and scope.
Embodiment one
With reference to 2A-2D figure, it shows the profile according to a kind of manufacturing process of the control circuit of the organic electroluminescent LED of one embodiment of the present invention.
In 2A figure, at first form the bottom electrode 224 of first grid 222, electric capacity and second grid 226 on insulating substrate 210.Wherein, the bottom electrode 224 of above-mentioned first grid 222, electric capacity and second grid 226 employed materials can be molybdenum, chromium, iridium, aluminium, titanium, above-mentioned composition or alloy.Its formation method can be at first implements physical vaporous deposition to deposit a conductor layer, as sputtering method, and this conductor layer of patterning again, and the method for patterning can be the lithography method.
Then in 2B figure, form the first grid dielectric layer 232 and first channel region 242 in reaching the second grid dielectric layer 236 and second channel region 246 on the part first grid 222 on part second grid 226.Wherein, above-mentioned first grid dielectric layer 232 and second grid dielectric layer 236 employed materials can be silicon nitride, silica or its composition.First channel region 242 and second channel region, 246 employed materials can be amorphous silicon.Its formation method can be and deposits a dielectric layer and semiconductor in regular turn, this dielectric layer of patterning and semiconductor layer again, and the method for patterning can be the lithography method.
Then in 2C figure, forming etch stop layer 250 is covered on the insulating substrate 210, the pattern etched stop layer 250 again, form the source/drain contact with the part upper surface that exposes first channel region 242 and second channel region 246 to be applicable to, and form guide hole 280 in the part upper surface of second grid 226.Wherein, 250 materials useds of etch stop layer can be silicon nitride, silica or silicon oxynitride.
In 2D figure, forming doping semiconductor layer 260 and conductor layer 270 in regular turn is covered on the insulating substrate 210, patterning conductor layer 270 and doping semiconductor layer 260 again, with form source/drain on first channel region 242 and second channel region 246, form connecting line to be electrically connected the top electrode of drain electrode and second grid 226 and formation electric capacity on first channel region 242.Wherein, doping semiconductor layer 260 employed materials can be N type doped amorphous silicon.And the employed material of conductor layer can be molybdenum, chromium, iridium, aluminium, titanium, above-mentioned composition or alloy.
Embodiment two
With reference to 3A-3D figure, it shows the profile according to a kind of manufacturing process of the control circuit of the organic electroluminescent LED of one embodiment of the present invention.
In 3A figure, at first form the bottom electrode 324 of first grid 322, electric capacity and second grid 326 on insulating substrate 310.Wherein, the bottom electrode 324 of above-mentioned first grid 322, electric capacity and second grid 326 employed materials can be molybdenum, chromium, iridium, aluminium, titanium, above-mentioned composition or alloy.Its formation method can be at first implements physical vaporous deposition to deposit a conductor layer, as sputtering method, and this conductor layer of patterning again, and the method for patterning can be the lithography method.
Then in 3B figure, form the first grid dielectric layer 332 and first channel region 342 on the part first grid 322, the storehouse dielectric layer 334 of electric capacity on the bottom electrode 324 of electric capacity and second grid dielectric layer 336 and second channel region 346 on part second grid 326.Wherein, above-mentioned first grid dielectric layer 332, second grid dielectric layer 336 can be silicon nitride, silica or its composition with storehouse dielectric layer 334 employed materials.First channel region 342 and second channel region, 346 employed materials can be amorphous silicon.Its formation method can be and at first deposits a dielectric layer, and this dielectric layer of patterning to be forming first grid dielectric layer 332, second grid dielectric layer 336 and storehouse dielectric layer 334 again, and the method for patterning can be the lithography method.Deposit semi-conductor layer then, this semiconductor layer of patterning is to form first channel region 342 and second channel region 346 again.Follow-up technology is identical with embodiment one, therefore repeats no more.
Embodiment three
With reference to 4A-4D figure, it shows the profile according to a kind of manufacturing process of the control circuit of the organic electroluminescent LED of one embodiment of the present invention.
In 4A figure, at first form the bottom electrode 424 of first grid 422, electric capacity and second grid 426 on insulating substrate 410.Wherein, the bottom electrode 424 of above-mentioned first grid 422, electric capacity and second grid 426 employed materials can be molybdenum, chromium, iridium, aluminium, titanium, above-mentioned composition or alloy.Its formation method can be at first implements physical vaporous deposition to deposit a conductor layer, as sputtering method, and this conductor layer of patterning again, and the method for patterning can be the lithography method.
Then in 4B figure, form the first grid dielectric layer 432 and first channel region 442 on the part first grid 422, the storehouse dielectric layer 434 of electric capacity and stacked semiconductor layer 444 on the bottom electrode 424 of electric capacity and second grid dielectric layer 436 and second channel region 446 on part second grid 426.Wherein, above-mentioned first grid dielectric layer 432, second grid dielectric layer 436 can be silicon nitride, silica or its composition with storehouse dielectric layer 434 employed materials.First channel region 442, stacked semiconductor layer 444 and second channel region, 446 employed materials can be amorphous silicon.Its formation method can be and deposits a dielectric layer and semiconductor layer in regular turn, this dielectric layer of patterning and semiconductor layer again, and the method for patterning can be the lithography method.Follow-up technology is identical with embodiment one, therefore repeats no more.
The invention described above preferred embodiment is used the present invention and is had following advantage as can be known.
(1) because of the present invention defines etch stop layer and guide hole simultaneously, so the required mask count of technology of the control circuit of organic electroluminescent LED is reduced together.
(2) in the control circuit of the organic electroluminescent LED that application the present invention manufactures, the dielectric layer of electric capacity can be different with the gate dielectric of the first transistor or transistor seconds.So when the designer changes the capacitance of electric capacity, not electrically must therefore not the changing of the first transistor and transistor seconds.
(3) similarly, because in the present invention, the dielectric layer of electric capacity can be different with the gate dielectric of the first transistor or transistor seconds.So when the designer changed the capacitance of electric capacity, therefore the geometric properties of the first transistor and transistor seconds must not change.
Though the present invention discloses as above with a preferred embodiment; right its is not in order to qualification the present invention, any those of ordinary skill in the art, without departing from the spirit and scope of the present invention; when can doing various changes and retouching, so protection scope of the present invention is as the criterion when looking the claim person of defining.
Claims (12)
1. the manufacture method of the control circuit of an organic electroluminescent LED comprises the following step at least:
Insulating substrate is provided;
The bottom electrode of formation first grid, electric capacity and second grid are on this insulating substrate;
Form the first grid dielectric layer and first channel region in to this first grid of small part, reaching the second grid dielectric layer and second channel region in to this second grid of small part;
Forming etch stop layer is covered on this insulating substrate;
This etch stop layer of patterning forms the part upper surface that source/drain contacted and exposed this second grid with the part upper surface that exposes this first channel region and this second channel region to be applicable to;
Forming doping semiconductor layer and conductor layer in regular turn is covered on this insulating substrate; And
This conductor layer of patterning and this doping semiconductor layer, with form source/drain on this first channel region and this second channel region, form connecting line to be electrically connected drain electrode and this second grid on this first channel region and to form the top electrode of this electric capacity.
2. manufacture method as claimed in claim 1 also is contained in before this etch stop layer of formation, forms the electric capacity stack layer on the bottom electrode of this electric capacity.
3. manufacture method as claimed in claim 2, wherein this electric capacity stack layer comprises the storehouse dielectric layer at least.
4. manufacture method as claimed in claim 3, wherein this electric capacity stack layer also comprises the stacked semiconductor layer, and this stacked semiconductor layer is positioned on this storehouse dielectric layer.
5. the control circuit of an organic electroluminescent LED comprises at least:
The first film transistor, the transistorized grid of this first film is electrically connected scan line, and transistorized first source/drain of this first film is electrically connected data wire;
Second thin-film transistor, transistorized second source/drain of this first film of grid electrically connect of this second thin-film transistor, the 3rd source/drain of this second thin-film transistor is electrically connected an operating voltage, and the 4th source/drain of this second thin-film transistor is electrically connected organic electroluminescent LED; And
Electric capacity, an end is electrically connected a reference voltage, and the other end is electrically connected the grid of this second thin-film transistor, and wherein, the material of the dielectric layer of this electric capacity differs from one of them the material of gate dielectric of this first film transistor and this second thin-film transistor.
6. control circuit as claimed in claim 5, wherein this electric capacity also has the electric capacity stack layer, and this electric capacity stack layer is between the bottom electrode and dielectric layer of this electric capacity.
7. control circuit as claimed in claim 6, wherein this electric capacity stack layer comprises the storehouse dielectric layer at least, and this storehouse dielectric layer is positioned on the bottom electrode of this electric capacity.
8. control circuit as claimed in claim 7, wherein the material of this storehouse dielectric layer is identical with the material of the gate dielectric of this first film transistor and this second thin-film transistor.
9. control circuit as claimed in claim 7, wherein the thickness of this storehouse dielectric layer is identical with the thickness of the gate dielectric of this first film transistor and this second thin-film transistor.
10. control circuit as claimed in claim 7, wherein this electric capacity stack layer also comprises the stacked semiconductor layer, and this stacked semiconductor layer is positioned on this storehouse dielectric layer.
11. as the control circuit of claim 10, wherein the material of this stacked semiconductor layer is identical with the material of the channel region of this this second thin-film transistor of the first film transistor AND gate.
12. as the control circuit of claim 10, wherein the thickness of this stacked semiconductor layer is identical with the thickness of the channel region of this this second thin-film transistor of the first film transistor AND gate.
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| CNB2005101184111A CN100342525C (en) | 2005-10-28 | 2005-10-28 | Control circuit for organic electroluminescent diode and producing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2005101184111A CN100342525C (en) | 2005-10-28 | 2005-10-28 | Control circuit for organic electroluminescent diode and producing method thereof |
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| CNB2007101547720A Division CN100517735C (en) | 2005-10-28 | 2005-10-28 | Control circuit for organic EL diode |
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| CN1773693A CN1773693A (en) | 2006-05-17 |
| CN100342525C true CN100342525C (en) | 2007-10-10 |
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| CN100463193C (en) | 2006-11-03 | 2009-02-18 | 北京京东方光电科技有限公司 | TFT array structure and its producing method |
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| CN1588519A (en) * | 2004-07-14 | 2005-03-02 | 友达光电股份有限公司 | Pixel driving circuit of active organic light-emitting display |
| CN1591804A (en) * | 2004-02-20 | 2005-03-09 | 友达光电股份有限公司 | Method for mfg film transistor |
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| US6756324B1 (en) * | 1997-03-25 | 2004-06-29 | International Business Machines Corporation | Low temperature processes for making electronic device structures |
| CN1440013A (en) * | 2003-02-24 | 2003-09-03 | 统宝光电股份有限公司 | Electroluminescence type active array picture element driving circuit in display screen |
| CN1577914A (en) * | 2003-07-28 | 2005-02-09 | 友达光电股份有限公司 | Organic Light-emitting diode display panel and producing method thereof |
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