CH678245A5 - - Google Patents
Download PDFInfo
- Publication number
- CH678245A5 CH678245A5 CH213389A CH213389A CH678245A5 CH 678245 A5 CH678245 A5 CH 678245A5 CH 213389 A CH213389 A CH 213389A CH 213389 A CH213389 A CH 213389A CH 678245 A5 CH678245 A5 CH 678245A5
- Authority
- CH
- Switzerland
- Prior art keywords
- gate
- cathode
- base layer
- anode
- doped
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 6
- 239000002800 charge carrier Substances 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
- H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
- H01L29/745—Gate-turn-off devices with turn-off by field effect
- H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH213389A CH678245A5 (zh) | 1989-06-07 | 1989-06-07 | |
| DE19904014207 DE4014207A1 (de) | 1989-06-07 | 1990-05-03 | Bipolares, ueber ein gate abschaltbares leistungshalbleiter-bauelement |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH213389A CH678245A5 (zh) | 1989-06-07 | 1989-06-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH678245A5 true CH678245A5 (zh) | 1991-08-15 |
Family
ID=4226646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH213389A CH678245A5 (zh) | 1989-06-07 | 1989-06-07 |
Country Status (2)
| Country | Link |
|---|---|
| CH (1) | CH678245A5 (zh) |
| DE (1) | DE4014207A1 (zh) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4123414A1 (de) * | 1991-07-15 | 1993-01-21 | Siemens Ag | Leistungs-halbleiterbauelement und verfahren zu dessen herstellung |
| JP3182262B2 (ja) * | 1993-07-12 | 2001-07-03 | 株式会社東芝 | 半導体装置 |
| US9742385B2 (en) | 2013-06-24 | 2017-08-22 | Ideal Power, Inc. | Bidirectional semiconductor switch with passive turnoff |
| US9799731B2 (en) | 2013-06-24 | 2017-10-24 | Ideal Power, Inc. | Multi-level inverters using sequenced drive of double-base bidirectional bipolar transistors |
| WO2014210072A1 (en) | 2013-06-24 | 2014-12-31 | Ideal Power Inc. | Systems, circuits, devices, and methods with bidirectional bipolar transistors |
| US11637016B2 (en) | 2013-12-11 | 2023-04-25 | Ideal Power Inc. | Systems and methods for bidirectional device fabrication |
| US9355853B2 (en) | 2013-12-11 | 2016-05-31 | Ideal Power Inc. | Systems and methods for bidirectional device fabrication |
| US20160204714A1 (en) | 2014-11-06 | 2016-07-14 | Ideal Power Inc. | Variable-Voltage Self-Synchronizing Rectifier Circuits, Methods, and Systems |
| CN114551601B (zh) * | 2022-04-26 | 2022-07-15 | 成都蓉矽半导体有限公司 | 高抗浪涌电流能力的集成栅控二极管的碳化硅mosfet |
-
1989
- 1989-06-07 CH CH213389A patent/CH678245A5/de not_active IP Right Cessation
-
1990
- 1990-05-03 DE DE19904014207 patent/DE4014207A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| DE4014207A1 (de) | 1990-12-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |