CH590561A5 - - Google Patents
Info
- Publication number
- CH590561A5 CH590561A5 CH155575A CH155575A CH590561A5 CH 590561 A5 CH590561 A5 CH 590561A5 CH 155575 A CH155575 A CH 155575A CH 155575 A CH155575 A CH 155575A CH 590561 A5 CH590561 A5 CH 590561A5
- Authority
- CH
- Switzerland
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1091—Substrate region of field-effect devices of charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76833—Buried channel CCD
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Element Separation (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7401939A NL7401939A (nl) | 1974-02-13 | 1974-02-13 | Ladingsgekoppelde inrichting. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH590561A5 true CH590561A5 (es) | 1977-08-15 |
Family
ID=19820738
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH155575A CH590561A5 (es) | 1974-02-13 | 1975-02-10 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4110777A (es) |
| JP (1) | JPS5711152B2 (es) |
| CA (1) | CA1046638A (es) |
| CH (1) | CH590561A5 (es) |
| DE (1) | DE2504088C2 (es) |
| ES (1) | ES434627A1 (es) |
| FR (1) | FR2260872B1 (es) |
| GB (1) | GB1495453A (es) |
| NL (1) | NL7401939A (es) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4364076A (en) * | 1977-08-26 | 1982-12-14 | Texas Instruments Incorporated | Co-planar well-type charge coupled device with enhanced storage capacity and reduced leakage current |
| US4365261A (en) * | 1977-08-26 | 1982-12-21 | Texas Instruments Incorporated | Co-planar barrier-type charge coupled device with enhanced storage capacity and decreased leakage current |
| US4379306A (en) * | 1977-08-26 | 1983-04-05 | Texas Instruments Incorporated | Non-coplanar barrier-type charge coupled device with enhanced storage capacity and reduced leakage current |
| US4151539A (en) * | 1977-12-23 | 1979-04-24 | The United States Of America As Represented By The Secretary Of The Air Force | Junction-storage JFET bucket-brigade structure |
| US4216574A (en) * | 1978-06-29 | 1980-08-12 | Raytheon Company | Charge coupled device |
| US4276099A (en) * | 1978-10-11 | 1981-06-30 | The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland | Fabrication of infra-red charge coupled devices |
| US4240089A (en) * | 1978-10-18 | 1980-12-16 | General Electric Company | Linearized charge transfer devices |
| US4559638A (en) * | 1978-10-23 | 1985-12-17 | Westinghouse Electric Corp. | Charge transfer device having an improved read-out portion |
| US4672645A (en) * | 1978-10-23 | 1987-06-09 | Westinghouse Electric Corp. | Charge transfer device having an improved read-out portion |
| US4234887A (en) * | 1979-05-24 | 1980-11-18 | International Business Machines Corporation | V-Groove charge-coupled device |
| JPS577964A (en) * | 1980-06-17 | 1982-01-16 | Matsushita Electric Ind Co Ltd | Charge transfer element |
| US4906584A (en) * | 1985-02-25 | 1990-03-06 | Tektronix, Inc. | Fast channel single phase buried channel CCD |
| US4725872A (en) * | 1985-02-25 | 1988-02-16 | Tektronix, Inc. | Fast channel single phase buried channel CCD |
| US5956085A (en) * | 1996-11-07 | 1999-09-21 | Umax Data Systems Inc. | Apparatus for increasing the sample frequency of scanning |
| US6645506B1 (en) * | 1997-04-18 | 2003-11-11 | Ganeden Biotech, Inc. | Topical compositions containing extracellular products of Pseudomonas lindbergii and Emu oil |
| DE102013018789A1 (de) * | 2012-11-29 | 2014-06-05 | Infineon Technologies Ag | Steuern lichterzeugter Ladungsträger |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3676715A (en) * | 1970-06-26 | 1972-07-11 | Bell Telephone Labor Inc | Semiconductor apparatus for image sensing and dynamic storage |
| US3796932A (en) * | 1971-06-28 | 1974-03-12 | Bell Telephone Labor Inc | Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel |
| US3792322A (en) * | 1973-04-19 | 1974-02-12 | W Boyle | Buried channel charge coupled devices |
| US3852799A (en) * | 1973-04-27 | 1974-12-03 | Bell Telephone Labor Inc | Buried channel charge coupled apparatus |
-
1974
- 1974-02-13 NL NL7401939A patent/NL7401939A/xx not_active Application Discontinuation
-
1975
- 1975-01-30 US US05/545,408 patent/US4110777A/en not_active Expired - Lifetime
- 1975-01-31 DE DE2504088A patent/DE2504088C2/de not_active Expired
- 1975-02-06 CA CA219,519A patent/CA1046638A/en not_active Expired
- 1975-02-10 CH CH155575A patent/CH590561A5/xx not_active IP Right Cessation
- 1975-02-10 GB GB5490/75A patent/GB1495453A/en not_active Expired
- 1975-02-11 ES ES434627A patent/ES434627A1/es not_active Expired
- 1975-02-12 JP JP1775875A patent/JPS5711152B2/ja not_active Expired
- 1975-02-13 FR FR7504508A patent/FR2260872B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1495453A (en) | 1977-12-21 |
| DE2504088C2 (de) | 1984-04-12 |
| AU7802875A (en) | 1976-08-12 |
| NL7401939A (nl) | 1975-08-15 |
| FR2260872A1 (es) | 1975-09-05 |
| JPS5711152B2 (es) | 1982-03-02 |
| US4110777A (en) | 1978-08-29 |
| ES434627A1 (es) | 1977-03-16 |
| DE2504088A1 (de) | 1975-08-14 |
| JPS50119582A (es) | 1975-09-19 |
| FR2260872B1 (es) | 1978-04-21 |
| CA1046638A (en) | 1979-01-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |