CH584969A5 - - Google Patents

Info

Publication number
CH584969A5
CH584969A5 CH411175A CH411175A CH584969A5 CH 584969 A5 CH584969 A5 CH 584969A5 CH 411175 A CH411175 A CH 411175A CH 411175 A CH411175 A CH 411175A CH 584969 A5 CH584969 A5 CH 584969A5
Authority
CH
Switzerland
Application number
CH411175A
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of CH584969A5 publication Critical patent/CH584969A5/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Light Receiving Elements (AREA)
CH411175A 1974-04-01 1975-04-01 CH584969A5 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US45650574A 1974-04-01 1974-04-01

Publications (1)

Publication Number Publication Date
CH584969A5 true CH584969A5 (fr) 1977-02-15

Family

ID=23813029

Family Applications (1)

Application Number Title Priority Date Filing Date
CH411175A CH584969A5 (fr) 1974-04-01 1975-04-01

Country Status (5)

Country Link
JP (1) JPS50134585A (fr)
CA (1) CA1015069A (fr)
CH (1) CH584969A5 (fr)
DE (1) DE2513460A1 (fr)
GB (1) GB1455811A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5252593A (en) * 1975-10-27 1977-04-27 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light receiving diode
SE9900882D0 (sv) * 1999-03-12 1999-03-12 Ind Mikroelektronikcentrum Ab A high power IMPATT diode

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3426295A (en) * 1966-05-16 1969-02-04 Bell Telephone Labor Inc Negative resistance microwave device
GB1290926A (fr) * 1969-06-20 1972-09-27
FR2077474B1 (fr) * 1969-12-24 1973-10-19 Labo Electronique Physique

Also Published As

Publication number Publication date
GB1455811A (en) 1976-11-17
JPS50134585A (fr) 1975-10-24
CA1015069A (en) 1977-08-02
DE2513460A1 (de) 1975-10-02

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Legal Events

Date Code Title Description
PL Patent ceased