CH540568A - Method for forming ohmic contacts on the surface of a metal-insulator-semiconductor component - Google Patents

Method for forming ohmic contacts on the surface of a metal-insulator-semiconductor component

Info

Publication number
CH540568A
CH540568A CH927571A CH927571A CH540568A CH 540568 A CH540568 A CH 540568A CH 927571 A CH927571 A CH 927571A CH 927571 A CH927571 A CH 927571A CH 540568 A CH540568 A CH 540568A
Authority
CH
Switzerland
Prior art keywords
insulator
metal
semiconductor component
ohmic contacts
forming ohmic
Prior art date
Application number
CH927571A
Other languages
German (de)
Inventor
Mayer Alfred
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of CH540568A publication Critical patent/CH540568A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
CH927571A 1970-06-29 1971-06-24 Method for forming ohmic contacts on the surface of a metal-insulator-semiconductor component CH540568A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US5050670A 1970-06-29 1970-06-29

Publications (1)

Publication Number Publication Date
CH540568A true CH540568A (en) 1973-08-15

Family

ID=21965622

Family Applications (1)

Application Number Title Priority Date Filing Date
CH927571A CH540568A (en) 1970-06-29 1971-06-24 Method for forming ohmic contacts on the surface of a metal-insulator-semiconductor component

Country Status (9)

Country Link
JP (1) JPS516502B1 (en)
BE (1) BE769169A (en)
CH (1) CH540568A (en)
DE (1) DE2128360A1 (en)
ES (2) ES392536A1 (en)
FR (1) FR2096553B1 (en)
GB (1) GB1307667A (en)
NL (1) NL7108904A (en)
SE (1) SE370144B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19828846A1 (en) * 1998-06-27 1999-12-30 Micronas Intermetall Gmbh Process for coating a substrate

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5371802U (en) * 1976-11-17 1978-06-15
DE3011660A1 (en) * 1980-03-26 1981-10-01 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Back contact formation for semiconductor device - includes vapour deposited titanium, palladium, tin and indium layers of specified thickness

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19828846A1 (en) * 1998-06-27 1999-12-30 Micronas Intermetall Gmbh Process for coating a substrate
DE19828846C2 (en) * 1998-06-27 2001-01-18 Micronas Gmbh Process for coating a substrate
US6294218B1 (en) 1998-06-27 2001-09-25 Micronas Gmbh Process for coating a substrate

Also Published As

Publication number Publication date
GB1307667A (en) 1973-02-21
SE370144B (en) 1974-09-30
FR2096553B1 (en) 1976-09-03
DE2128360A1 (en) 1972-01-13
ES392536A1 (en) 1973-10-01
ES396549A1 (en) 1974-04-16
FR2096553A1 (en) 1972-02-18
BE769169A (en) 1971-11-03
JPS516502B1 (en) 1976-02-28
NL7108904A (en) 1971-12-31

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Legal Events

Date Code Title Description
PL Patent ceased