CH512822A - Method for contacting silicon carbide semiconductors - Google Patents

Method for contacting silicon carbide semiconductors

Info

Publication number
CH512822A
CH512822A CH332070A CH332070A CH512822A CH 512822 A CH512822 A CH 512822A CH 332070 A CH332070 A CH 332070A CH 332070 A CH332070 A CH 332070A CH 512822 A CH512822 A CH 512822A
Authority
CH
Switzerland
Prior art keywords
silicon carbide
contacting silicon
carbide semiconductors
semiconductors
contacting
Prior art date
Application number
CH332070A
Other languages
German (de)
Inventor
Maximilian Dipl Phys Koeniger
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Priority to CH332070A priority Critical patent/CH512822A/en
Priority to DE19702028076 priority patent/DE2028076C3/en
Publication of CH512822A publication Critical patent/CH512822A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/0485—Ohmic electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
CH332070A 1970-03-06 1970-03-06 Method for contacting silicon carbide semiconductors CH512822A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CH332070A CH512822A (en) 1970-03-06 1970-03-06 Method for contacting silicon carbide semiconductors
DE19702028076 DE2028076C3 (en) 1970-03-06 1970-06-08 Method for contacting silicon carbide semiconductor bodies

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH332070A CH512822A (en) 1970-03-06 1970-03-06 Method for contacting silicon carbide semiconductors

Publications (1)

Publication Number Publication Date
CH512822A true CH512822A (en) 1971-09-15

Family

ID=4253435

Family Applications (1)

Application Number Title Priority Date Filing Date
CH332070A CH512822A (en) 1970-03-06 1970-03-06 Method for contacting silicon carbide semiconductors

Country Status (2)

Country Link
CH (1) CH512822A (en)
DE (1) DE2028076C3 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6271271A (en) * 1985-09-24 1987-04-01 Sharp Corp Electrode structure of silicon carbide semiconductor
DE19939107A1 (en) 1998-09-23 2000-03-30 Siemens Ag Silicon carbide component, especially a Schottky diode, is produced by forming an ohmic contact before high temperature growth of an epitaxial layer

Also Published As

Publication number Publication date
DE2028076A1 (en) 1971-09-23
DE2028076C3 (en) 1978-09-28
DE2028076B2 (en) 1978-02-09

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Legal Events

Date Code Title Description
PL Patent ceased