CH510329A - Process for the production of superficial doping layers of small depth and low superficial doping concentration in a silicon body - Google Patents

Process for the production of superficial doping layers of small depth and low superficial doping concentration in a silicon body

Info

Publication number
CH510329A
CH510329A CH746269A CH746269A CH510329A CH 510329 A CH510329 A CH 510329A CH 746269 A CH746269 A CH 746269A CH 746269 A CH746269 A CH 746269A CH 510329 A CH510329 A CH 510329A
Authority
CH
Switzerland
Prior art keywords
production
superficial
superficial doping
silicon body
small depth
Prior art date
Application number
CH746269A
Other languages
German (de)
Inventor
Denis Dipl Phys Clerc
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Priority to CH746269A priority Critical patent/CH510329A/en
Priority to DE1931331A priority patent/DE1931331C3/en
Priority to FR707017360A priority patent/FR2042675B3/fr
Priority to NL7006944A priority patent/NL7006944A/xx
Priority to GB23455/70A priority patent/GB1276203A/en
Publication of CH510329A publication Critical patent/CH510329A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Weting (AREA)
CH746269A 1969-05-16 1969-05-16 Process for the production of superficial doping layers of small depth and low superficial doping concentration in a silicon body CH510329A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CH746269A CH510329A (en) 1969-05-16 1969-05-16 Process for the production of superficial doping layers of small depth and low superficial doping concentration in a silicon body
DE1931331A DE1931331C3 (en) 1969-05-16 1969-06-20 Process for the production of doping layers in a silicon body of the p-conductivity type
FR707017360A FR2042675B3 (en) 1969-05-16 1970-05-13
NL7006944A NL7006944A (en) 1969-05-16 1970-05-13
GB23455/70A GB1276203A (en) 1969-05-16 1970-05-14 Method of doping a silicon member

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH746269A CH510329A (en) 1969-05-16 1969-05-16 Process for the production of superficial doping layers of small depth and low superficial doping concentration in a silicon body

Publications (1)

Publication Number Publication Date
CH510329A true CH510329A (en) 1971-07-15

Family

ID=4325492

Family Applications (1)

Application Number Title Priority Date Filing Date
CH746269A CH510329A (en) 1969-05-16 1969-05-16 Process for the production of superficial doping layers of small depth and low superficial doping concentration in a silicon body

Country Status (5)

Country Link
CH (1) CH510329A (en)
DE (1) DE1931331C3 (en)
FR (1) FR2042675B3 (en)
GB (1) GB1276203A (en)
NL (1) NL7006944A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2754833A1 (en) 1977-12-09 1979-06-13 Ibm Deutschland PHOSPHORUS DIFFUSION PROCESS FOR SEMICONDUCTOR APPLICATIONS
CN112834540B (en) * 2019-11-22 2022-07-05 中国科学院大连化学物理研究所 Determining PBI/H3PO4Method for measuring content of phosphoric acid in doped film

Also Published As

Publication number Publication date
FR2042675B3 (en) 1973-03-16
DE1931331A1 (en) 1970-11-19
GB1276203A (en) 1972-06-01
DE1931331B2 (en) 1978-06-15
NL7006944A (en) 1970-11-18
FR2042675A7 (en) 1971-02-12
DE1931331C3 (en) 1979-02-08

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Legal Events

Date Code Title Description
PL Patent ceased