CH502698A - Integrated, monolithic semiconductor circuit - Google Patents

Integrated, monolithic semiconductor circuit

Info

Publication number
CH502698A
CH502698A CH168369A CH168369A CH502698A CH 502698 A CH502698 A CH 502698A CH 168369 A CH168369 A CH 168369A CH 168369 A CH168369 A CH 168369A CH 502698 A CH502698 A CH 502698A
Authority
CH
Switzerland
Prior art keywords
integrated
semiconductor circuit
monolithic semiconductor
monolithic
circuit
Prior art date
Application number
CH168369A
Other languages
German (de)
Inventor
John Glinski Vincent
Thomas Murphy Bernard
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of CH502698A publication Critical patent/CH502698A/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401Combinations of FETs or IGBTs with BJTs
    • H10D84/403Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/765Making of isolation regions between components by field effect
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
CH168369A 1968-02-05 1969-02-04 Integrated, monolithic semiconductor circuit CH502698A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US70316568A 1968-02-05 1968-02-05
US78634568A 1968-12-23 1968-12-23

Publications (1)

Publication Number Publication Date
CH502698A true CH502698A (en) 1971-01-31

Family

ID=27107087

Family Applications (1)

Application Number Title Priority Date Filing Date
CH168369A CH502698A (en) 1968-02-05 1969-02-04 Integrated, monolithic semiconductor circuit

Country Status (7)

Country Link
BE (1) BE727540A (en)
CH (1) CH502698A (en)
DE (1) DE1904505A1 (en)
FR (1) FR2001361A1 (en)
GB (1) GB1262501A (en)
IL (1) IL31526A (en)
NL (1) NL6901820A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3125732B1 (en) 2021-07-28 2023-06-30 Matair Solder flux transfer device from an accelerated baking module to a baking and preservation module

Also Published As

Publication number Publication date
NL6901820A (en) 1969-08-07
FR2001361A1 (en) 1969-09-26
DE1904505A1 (en) 1969-11-06
BE727540A (en) 1969-07-01
GB1262501A (en) 1972-02-02
IL31526A0 (en) 1969-03-27
IL31526A (en) 1971-11-29

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Legal Events

Date Code Title Description
PL Patent ceased