CH499895A - Laser diode - Google Patents
Laser diodeInfo
- Publication number
- CH499895A CH499895A CH1453269A CH1453269A CH499895A CH 499895 A CH499895 A CH 499895A CH 1453269 A CH1453269 A CH 1453269A CH 1453269 A CH1453269 A CH 1453269A CH 499895 A CH499895 A CH 499895A
- Authority
- CH
- Switzerland
- Prior art keywords
- laser diode
- diode
- laser
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/02365—Fixing laser chips on mounts by clamping
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Semiconductor Lasers (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19681789061 DE1789061A1 (en) | 1968-09-30 | 1968-09-30 | Laser diode |
Publications (1)
Publication Number | Publication Date |
---|---|
CH499895A true CH499895A (en) | 1970-11-30 |
Family
ID=5706783
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1453269A CH499895A (en) | 1968-09-30 | 1969-09-26 | Laser diode |
Country Status (6)
Country | Link |
---|---|
US (1) | US3593191A (en) |
CH (1) | CH499895A (en) |
DE (1) | DE1789061A1 (en) |
FR (1) | FR2019189A1 (en) |
GB (1) | GB1273013A (en) |
NL (1) | NL6911718A (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3686543A (en) * | 1968-02-08 | 1972-08-22 | Rca Corp | Angled array semiconductor light sources |
US5955776A (en) * | 1996-12-04 | 1999-09-21 | Ball Semiconductor, Inc. | Spherical shaped semiconductor integrated circuit |
CN1142598C (en) | 1997-07-25 | 2004-03-17 | 日亚化学工业株式会社 | Nitride semiconductor device |
JP3770014B2 (en) | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | Nitride semiconductor device |
US6711191B1 (en) | 1999-03-04 | 2004-03-23 | Nichia Corporation | Nitride semiconductor laser device |
US6498643B1 (en) | 2000-11-13 | 2002-12-24 | Ball Semiconductor, Inc. | Spherical surface inspection system |
TWI362769B (en) | 2008-05-09 | 2012-04-21 | Univ Nat Chiao Tung | Light emitting device and fabrication method therefor |
EP3296805B1 (en) | 2013-06-12 | 2021-03-03 | Massachusetts Institute Of Technology | Optical modulator from standard fabrication processing |
US11105974B2 (en) | 2015-06-30 | 2021-08-31 | Massachusetts Institute Of Technology | Waveguide-coupled silicon-germanium photodetectors and fabrication methods for same |
WO2017058319A2 (en) | 2015-06-30 | 2017-04-06 | Massachusetts Institute Of Technology | Waveguide-coupled silicon-germanium photodetectors and fabrication methods for same |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2303432A (en) * | 1939-10-20 | 1942-12-01 | Atlas Powder Co | Shortening |
US2311101A (en) * | 1941-03-06 | 1943-02-16 | Eastman Kodak Co | Densitometer |
GB640691A (en) * | 1948-01-26 | 1950-07-26 | Howard Windley Ellis | Improvements in or relating to reflection photometers |
US2730922A (en) * | 1951-10-12 | 1956-01-17 | Rca Corp | Photoelectric inspection by a coincident method |
US2806401A (en) * | 1954-02-17 | 1957-09-17 | Rca Corp | Container inspection |
US3395368A (en) * | 1962-07-27 | 1968-07-30 | Warner Lambert Pharmaceutical | Frusto-conical laser configuration |
NL299675A (en) * | 1962-10-24 | 1900-01-01 | ||
US3344365A (en) * | 1963-06-03 | 1967-09-26 | Rca Corp | Laser system employing means with no moving parts for producing an angularly rotatable beam of coherent light |
US3451008A (en) * | 1964-07-22 | 1969-06-17 | Gulf General Atomic Inc | Shock wave optically pumped laser |
US3402366A (en) * | 1965-02-26 | 1968-09-17 | Ibm | Beam scanning in injection lasers |
US3517281A (en) * | 1967-01-25 | 1970-06-23 | Tyco Laboratories Inc | Light emitting silicon carbide semiconductor junction devices |
US3537028A (en) * | 1967-10-23 | 1970-10-27 | Rca Corp | Confocal semiconductor diode injection laser |
-
1968
- 1968-09-30 DE DE19681789061 patent/DE1789061A1/en active Pending
-
1969
- 1969-07-31 NL NL6911718A patent/NL6911718A/xx unknown
- 1969-09-24 US US860634A patent/US3593191A/en not_active Expired - Lifetime
- 1969-09-26 CH CH1453269A patent/CH499895A/en not_active IP Right Cessation
- 1969-09-29 GB GB47756/69A patent/GB1273013A/en not_active Expired
- 1969-09-29 FR FR6933102A patent/FR2019189A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
FR2019189A1 (en) | 1970-06-26 |
GB1273013A (en) | 1972-05-03 |
DE1789061A1 (en) | 1971-12-23 |
US3593191A (en) | 1971-07-13 |
NL6911718A (en) | 1970-04-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |