CH449783A - Method for producing ohmic emitter shunts on a semiconductor component - Google Patents

Method for producing ohmic emitter shunts on a semiconductor component

Info

Publication number
CH449783A
CH449783A CH1514566A CH1514566A CH449783A CH 449783 A CH449783 A CH 449783A CH 1514566 A CH1514566 A CH 1514566A CH 1514566 A CH1514566 A CH 1514566A CH 449783 A CH449783 A CH 449783A
Authority
CH
Switzerland
Prior art keywords
semiconductor component
ohmic emitter
producing ohmic
emitter shunts
shunts
Prior art date
Application number
CH1514566A
Other languages
French (fr)
Inventor
Toulemonde Jacques
Giraud Pierre
Original Assignee
Comp Generale Electricite
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Comp Generale Electricite filed Critical Comp Generale Electricite
Publication of CH449783A publication Critical patent/CH449783A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
CH1514566A 1965-10-25 1966-10-18 Method for producing ohmic emitter shunts on a semiconductor component CH449783A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR36129A FR1485529A (en) 1965-10-25 1965-10-25 Method of producing ohmic emitter shunts on a semiconductor assembly
FR36453A FR1473005A (en) 1965-10-25 1965-10-28 Method for producing semiconductor devices with ohmic emitter shunts

Publications (1)

Publication Number Publication Date
CH449783A true CH449783A (en) 1968-01-15

Family

ID=26166994

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1514566A CH449783A (en) 1965-10-25 1966-10-18 Method for producing ohmic emitter shunts on a semiconductor component

Country Status (5)

Country Link
BE (1) BE688353A (en)
CH (1) CH449783A (en)
FR (2) FR1485529A (en)
LU (1) LU52199A1 (en)
NL (1) NL6615089A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979767A (en) * 1971-06-24 1976-09-07 Mitsubishi Denki Kabushiki Kaisha Multilayer P-N junction semiconductor switching device having a low resistance path across said P-N junction

Also Published As

Publication number Publication date
LU52199A1 (en) 1968-05-08
BE688353A (en) 1967-04-17
NL6615089A (en) 1967-04-26
FR1473005A (en) 1967-03-17
FR1485529A (en) 1967-06-23

Similar Documents

Publication Publication Date Title
CH465065A (en) Method of manufacturing a semiconductor device
FR1445508A (en) Method of manufacturing a semiconductor device by diffusion
FR1519197A (en) Method for manufacturing a semiconductor device and semiconductor device obtained by implementing this method
FR93440E (en) Device for controlling the injection advance.
FR1451676A (en) Method of manufacturing a semiconductor device
FR93871E (en) Method for producing a prestressing anchor for cables.
AT288971B (en) Device for moving bundles along a support surface
CH449783A (en) Method for producing ohmic emitter shunts on a semiconductor component
CH495925A (en) Process for preparing a synthetic aggregate
FR1476403A (en) Device for controlling a machine by photo-electric exploration of a contour
CH422746A (en) Process for manufacturing a B-formyl-propionate acetal
FR1509527A (en) Method of manufacturing a semiconductor device carrier
FR1522733A (en) Method of manufacturing a semiconductor device
FR1507373A (en) Method and mechanism for automatic tool change on a machine tool
FR1430322A (en) Locking device for a machine carriage
CH486122A (en) Method for producing a semiconductor component with an emitter shunt and a component obtained by implementing this method
FR1515729A (en) Device for blocking one machine component on another
FR1478042A (en) Method of manufacturing a semiconductor device
FR1531852A (en) Method of masking the surface of a support
FR1544435A (en) Method for manufacturing a semiconductor device or component
FR1495989A (en) Method of manufacturing a semiconductor device and semiconductor device obtained by implementing this method
FR1485207A (en) Method of manufacturing a semiconductor device
CH532536A (en) Device for cutting a tile
FR1468007A (en) Process for modifying a substrate
CH461283A (en) Device for stopping a vehicle