CH447409A - Procedimento per la fabbricazione di un fototriodo a semiconduttori, fototriodo ottenuto con tale procedimento nonchè utilizzazione di tale fototriodo - Google Patents

Procedimento per la fabbricazione di un fototriodo a semiconduttori, fototriodo ottenuto con tale procedimento nonchè utilizzazione di tale fototriodo

Info

Publication number
CH447409A
CH447409A CH488565A CH488565A CH447409A CH 447409 A CH447409 A CH 447409A CH 488565 A CH488565 A CH 488565A CH 488565 A CH488565 A CH 488565A CH 447409 A CH447409 A CH 447409A
Authority
CH
Switzerland
Prior art keywords
phototriode
semiconductor
manufacture
well
semiconductor phototriode
Prior art date
Application number
CH488565A
Other languages
English (en)
Inventor
Kuenzig Herbert
Original Assignee
Raytheon Elsi S P A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Elsi S P A filed Critical Raytheon Elsi S P A
Publication of CH447409A publication Critical patent/CH447409A/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/957—Circuit arrangements for devices having potential barriers for position-sensitive photodetectors, e.g. lateral-effect photodiodes or quadrant photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
CH488565A 1964-04-07 1965-04-07 Procedimento per la fabbricazione di un fototriodo a semiconduttori, fototriodo ottenuto con tale procedimento nonchè utilizzazione di tale fototriodo CH447409A (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT9917464 1964-04-07
IT730764 1964-04-07

Publications (1)

Publication Number Publication Date
CH447409A true CH447409A (it) 1967-11-30

Family

ID=26325889

Family Applications (1)

Application Number Title Priority Date Filing Date
CH488565A CH447409A (it) 1964-04-07 1965-04-07 Procedimento per la fabbricazione di un fototriodo a semiconduttori, fototriodo ottenuto con tale procedimento nonchè utilizzazione di tale fototriodo

Country Status (2)

Country Link
CH (1) CH447409A (it)
DE (1) DE1514344A1 (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3105050A1 (de) * 1981-02-12 1982-08-19 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Bauelement
EP2500746B1 (de) * 2011-03-14 2013-10-30 Sick Ag Optoelektronisches Bauelement und Lichttaster mit einem solchen

Also Published As

Publication number Publication date
DE1514344A1 (de) 1969-10-02

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