CH442530A - Dispositif à semi-conducteur à autoprotection contre une surtension - Google Patents

Dispositif à semi-conducteur à autoprotection contre une surtension

Info

Publication number
CH442530A
CH442530A CH1049763A CH1049763A CH442530A CH 442530 A CH442530 A CH 442530A CH 1049763 A CH1049763 A CH 1049763A CH 1049763 A CH1049763 A CH 1049763A CH 442530 A CH442530 A CH 442530A
Authority
CH
Switzerland
Prior art keywords
self
semiconductor device
protection against
against overvoltage
overvoltage
Prior art date
Application number
CH1049763A
Other languages
English (en)
Inventor
Dufour Charles
Voorrips Hugo
Original Assignee
Comp Generale Electricite
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Comp Generale Electricite filed Critical Comp Generale Electricite
Priority to CH1049763A priority Critical patent/CH442530A/fr
Publication of CH442530A publication Critical patent/CH442530A/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747Bidirectional devices, e.g. triacs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
CH1049763A 1963-08-25 1963-08-25 Dispositif à semi-conducteur à autoprotection contre une surtension CH442530A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CH1049763A CH442530A (fr) 1963-08-25 1963-08-25 Dispositif à semi-conducteur à autoprotection contre une surtension

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1049763A CH442530A (fr) 1963-08-25 1963-08-25 Dispositif à semi-conducteur à autoprotection contre une surtension

Publications (1)

Publication Number Publication Date
CH442530A true CH442530A (fr) 1967-08-31

Family

ID=4363849

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1049763A CH442530A (fr) 1963-08-25 1963-08-25 Dispositif à semi-conducteur à autoprotection contre une surtension

Country Status (1)

Country Link
CH (1) CH442530A (fr)

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