CH428857A - Elektroakustischer Wandler auf Halbleiterbasis - Google Patents

Elektroakustischer Wandler auf Halbleiterbasis

Info

Publication number
CH428857A
CH428857A CH1586964A CH1586964A CH428857A CH 428857 A CH428857 A CH 428857A CH 1586964 A CH1586964 A CH 1586964A CH 1586964 A CH1586964 A CH 1586964A CH 428857 A CH428857 A CH 428857A
Authority
CH
Switzerland
Prior art keywords
electroacoustic transducer
semiconductor basis
semiconductor
basis
electroacoustic
Prior art date
Application number
CH1586964A
Other languages
German (de)
English (en)
Inventor
Alfons Dipl Phys Haehnlein
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH428857A publication Critical patent/CH428857A/de

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R23/00—Transducers other than those covered by groups H04R9/00 - H04R21/00
    • H04R23/006—Transducers other than those covered by groups H04R9/00 - H04R21/00 using solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
CH1586964A 1963-12-14 1964-12-08 Elektroakustischer Wandler auf Halbleiterbasis CH428857A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DED43175A DE1197510B (de) 1963-12-14 1963-12-14 Elektroakustischer Wandler auf Halbleiterbasis

Publications (1)

Publication Number Publication Date
CH428857A true CH428857A (de) 1967-01-31

Family

ID=7047388

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1586964A CH428857A (de) 1963-12-14 1964-12-08 Elektroakustischer Wandler auf Halbleiterbasis

Country Status (6)

Country Link
US (1) US3287506A (US20030220297A1-20031127-C00074.png)
BE (1) BE657085A (US20030220297A1-20031127-C00074.png)
CH (1) CH428857A (US20030220297A1-20031127-C00074.png)
DE (1) DE1197510B (US20030220297A1-20031127-C00074.png)
GB (1) GB1080238A (US20030220297A1-20031127-C00074.png)
NL (1) NL6414545A (US20030220297A1-20031127-C00074.png)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1277374B (de) * 1964-09-30 1968-09-12 Hitachi Ltd Mechanisch-elektrischer Wandler
US3414832A (en) * 1964-12-04 1968-12-03 Westinghouse Electric Corp Acoustically resonant device
DE1252258C2 (de) * 1965-04-13 1974-06-20 Nach dem elektrostatischen prinzip arbeitender elektroakustischer wandler und verfahren zu seiner herstellung
US3436492A (en) * 1966-01-17 1969-04-01 Northern Electric Co Field effect electroacoustic transducer
DE1278520B (de) * 1966-03-03 1968-09-26 Siemens Ag Elektromechanischer Wandler, insbesondere Mikrophon, auf MOS-Transistor-Basis
US3413497A (en) * 1966-07-13 1968-11-26 Hewlett Packard Co Insulated-gate field effect transistor with electrostatic protection means
GB1149589A (en) * 1966-11-15 1969-04-23 Matsushita Electric Ind Co Ltd Thin film active element
US3609252A (en) * 1967-01-23 1971-09-28 Texas Instruments Inc Transducer apparatus and system utilizing insulated gate semiconductor field effect devices
US3453887A (en) * 1967-02-08 1969-07-08 Corning Glass Works Temperature change measuring device
US3440873A (en) * 1967-05-23 1969-04-29 Corning Glass Works Miniature pressure transducer
US3422371A (en) * 1967-07-24 1969-01-14 Sanders Associates Inc Thin film piezoelectric oscillator
US3634787A (en) * 1968-01-23 1972-01-11 Westinghouse Electric Corp Electromechanical tuning apparatus particularly for microelectronic components
US3590343A (en) * 1969-01-31 1971-06-29 Westinghouse Electric Corp Resonant gate transistor with fixed position electrically floating gate electrode in addition to resonant member
US3978508A (en) * 1975-03-14 1976-08-31 Rca Corporation Pressure sensitive field effect device
US4665735A (en) * 1985-12-02 1987-05-19 Dittmar Norman R Device for detecting metallic ticking sounds
US4767973A (en) * 1987-07-06 1988-08-30 Sarcos Incorporated Systems and methods for sensing position and movement
US7893474B2 (en) 2006-02-14 2011-02-22 University Of Florida Research Foundation, Inc. Method and apparatus for imaging utilizing an ultrasonic imaging sensor array

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2898477A (en) * 1955-10-31 1959-08-04 Bell Telephone Labor Inc Piezoelectric field effect semiconductor device

Also Published As

Publication number Publication date
US3287506A (en) 1966-11-22
DE1197510B (de) 1965-07-29
NL6414545A (US20030220297A1-20031127-C00074.png) 1965-06-15
GB1080238A (en) 1967-08-23
BE657085A (US20030220297A1-20031127-C00074.png) 1965-06-14

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