CH416579A - Method for producing a semiconductor component and semiconductor component produced according to this method - Google Patents

Method for producing a semiconductor component and semiconductor component produced according to this method

Info

Publication number
CH416579A
CH416579A CH1590963A CH1590963A CH416579A CH 416579 A CH416579 A CH 416579A CH 1590963 A CH1590963 A CH 1590963A CH 1590963 A CH1590963 A CH 1590963A CH 416579 A CH416579 A CH 416579A
Authority
CH
Switzerland
Prior art keywords
semiconductor component
producing
produced according
component produced
semiconductor
Prior art date
Application number
CH1590963A
Other languages
German (de)
Inventor
C New Thorndike
W Dolan Robert
N Knopp Adalbert
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US249496A external-priority patent/US3362858A/en
Priority claimed from US249530A external-priority patent/US3249831A/en
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of CH416579A publication Critical patent/CH416579A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
CH1590963A 1963-01-04 1963-12-24 Method for producing a semiconductor component and semiconductor component produced according to this method CH416579A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US249496A US3362858A (en) 1963-01-04 1963-01-04 Fabrication of semiconductor controlled rectifiers
US249530A US3249831A (en) 1963-01-04 1963-01-04 Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient

Publications (1)

Publication Number Publication Date
CH416579A true CH416579A (en) 1966-07-15

Family

ID=26940112

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1590963A CH416579A (en) 1963-01-04 1963-12-24 Method for producing a semiconductor component and semiconductor component produced according to this method

Country Status (2)

Country Link
CH (1) CH416579A (en)
DE (1) DE1439958A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2443139A1 (en) * 1978-12-01 1980-06-27 Radiotechnique Compelec Mesa structure monolithic triac esp. light operated type - has two thyristors sharing oppositely conducting regions and terminal bridging vertically divided base layer

Also Published As

Publication number Publication date
DE1439958A1 (en) 1970-01-15

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