CH415887A - Verfahren zur Herstellung von Halbleiter-Rekombinationslasern mit Pérot-Fabry-Grenzflächen hoher Güte - Google Patents
Verfahren zur Herstellung von Halbleiter-Rekombinationslasern mit Pérot-Fabry-Grenzflächen hoher GüteInfo
- Publication number
- CH415887A CH415887A CH199364A CH199364A CH415887A CH 415887 A CH415887 A CH 415887A CH 199364 A CH199364 A CH 199364A CH 199364 A CH199364 A CH 199364A CH 415887 A CH415887 A CH 415887A
- Authority
- CH
- Switzerland
- Prior art keywords
- pérot
- fabry
- interfaces
- production
- high quality
- Prior art date
Links
- 238000000034 method Methods 0.000 title 1
- 238000005215 recombination Methods 0.000 title 1
- 230000006798 recombination Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Dicing (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US260020A US3341937A (en) | 1963-02-20 | 1963-02-20 | Crystalline injection laser device manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH415887A true CH415887A (de) | 1966-06-30 |
Family
ID=22987482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH199364A CH415887A (de) | 1963-02-20 | 1964-02-19 | Verfahren zur Herstellung von Halbleiter-Rekombinationslasern mit Pérot-Fabry-Grenzflächen hoher Güte |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3341937A (de) |
| BE (1) | BE644039A (de) |
| CH (1) | CH415887A (de) |
| GB (1) | GB995121A (de) |
| NL (1) | NL6401061A (de) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3457633A (en) * | 1962-12-31 | 1969-07-29 | Ibm | Method of making crystal shapes having optically related surfaces |
| US3419742A (en) * | 1965-11-24 | 1968-12-31 | Monsanto Co | Injection-luminescent gaas diodes having a graded p-n junction |
| US3768037A (en) * | 1965-11-26 | 1973-10-23 | Hitachi Ltd | Semiconductor diode laser device |
| US3531735A (en) * | 1966-06-28 | 1970-09-29 | Gen Electric | Semiconductor laser having grooves to prevent radiation transverse to the optical axis |
| US3471923A (en) * | 1966-12-09 | 1969-10-14 | Rca Corp | Method of making diode arrays |
| US3579055A (en) * | 1968-08-05 | 1971-05-18 | Bell & Howell Co | Semiconductor laser device and method for it{3 s fabrication |
| US3831030A (en) * | 1971-07-19 | 1974-08-20 | Texas Instruments Inc | Laser-operated system for spectroscopic analysis |
| IT963303B (it) * | 1971-07-29 | 1974-01-10 | Licentia Gmbh | Laser a semiconduttore |
| US3974514A (en) * | 1974-12-11 | 1976-08-10 | Rca Corporation | Electroluminescent edge-emitting diode comprising a light reflector in a groove |
| US4097310A (en) * | 1975-06-03 | 1978-06-27 | Joseph Lindmayer | Method of forming silicon solar energy cells |
| US4469500A (en) * | 1981-01-26 | 1984-09-04 | Rca Corporation | Method of cleaving a crystal to produce a high optical quality corner |
| US4380862A (en) * | 1981-11-16 | 1983-04-26 | Rca Corporation | Method for supplying a low resistivity electrical contact to a semiconductor laser device |
| GB2172141B (en) * | 1985-03-08 | 1988-11-16 | Stc Plc | Single heterostructure laser chip manufacture |
| US4707219A (en) * | 1985-05-14 | 1987-11-17 | American Telephone And Telegraph Company, At&T Bell Laboratories | Integrated devices including cleaved semiconductor lasers |
| US4927778A (en) * | 1988-08-05 | 1990-05-22 | Eastman Kodak Company | Method of improving yield of LED arrays |
| US5081002A (en) * | 1989-04-24 | 1992-01-14 | The Trustees Of Columbia University In The City Of New York | Method of localized photohemical etching of multilayered semiconductor body |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3122827A (en) * | 1960-08-04 | 1964-03-03 | Hughes Aircraft Co | Polycrystalline article and method for making same |
| US3152939A (en) * | 1960-08-12 | 1964-10-13 | Westinghouse Electric Corp | Process for preparing semiconductor members |
| US3193418A (en) * | 1960-10-27 | 1965-07-06 | Fairchild Camera Instr Co | Semiconductor device fabrication |
| US3128213A (en) * | 1961-07-20 | 1964-04-07 | Int Rectifier Corp | Method of making a semiconductor device |
| BE639066A (de) * | 1962-10-24 | 1900-01-01 | ||
| US3247576A (en) * | 1962-10-30 | 1966-04-26 | Ibm | Method of fabrication of crystalline shapes |
-
1963
- 1963-02-20 US US260020A patent/US3341937A/en not_active Expired - Lifetime
-
1964
- 1964-02-05 GB GB4815/64A patent/GB995121A/en not_active Expired
- 1964-02-10 NL NL6401061A patent/NL6401061A/xx unknown
- 1964-02-19 CH CH199364A patent/CH415887A/de unknown
- 1964-02-19 BE BE644039A patent/BE644039A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US3341937A (en) | 1967-09-19 |
| BE644039A (de) | 1964-06-15 |
| GB995121A (en) | 1965-06-16 |
| NL6401061A (de) | 1964-08-21 |
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