CH406659A - Pressure dependent semiconductor device - Google Patents

Pressure dependent semiconductor device

Info

Publication number
CH406659A
CH406659A CH452864A CH452864A CH406659A CH 406659 A CH406659 A CH 406659A CH 452864 A CH452864 A CH 452864A CH 452864 A CH452864 A CH 452864A CH 406659 A CH406659 A CH 406659A
Authority
CH
Switzerland
Prior art keywords
semiconductor device
pressure dependent
dependent semiconductor
pressure
semiconductor
Prior art date
Application number
CH452864A
Other languages
German (de)
Inventor
Krieger Friedrich
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH406659A publication Critical patent/CH406659A/en

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R23/00—Transducers other than those covered by groups H04R9/00 - H04R21/00
    • H04R23/006—Transducers other than those covered by groups H04R9/00 - H04R21/00 using solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
CH452864A 1963-04-11 1964-04-09 Pressure dependent semiconductor device CH406659A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES84674A DE1231032B (en) 1963-04-11 1963-04-11 Pressure-dependent semiconductor component with at least one pn junction

Publications (1)

Publication Number Publication Date
CH406659A true CH406659A (en) 1966-01-31

Family

ID=7511846

Family Applications (1)

Application Number Title Priority Date Filing Date
CH452864A CH406659A (en) 1963-04-11 1964-04-09 Pressure dependent semiconductor device

Country Status (5)

Country Link
BE (1) BE646415A (en)
CH (1) CH406659A (en)
DE (1) DE1231032B (en)
GB (1) GB1055725A (en)
NL (1) NL6403888A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1267437B (en) * 1965-03-12 1968-05-02 Telefunken Patent Use of an arrangement containing a transistor for converting mechanical into electrical energy

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3115565A1 (en) * 1981-04-16 1982-11-11 Nina Vladimirovna Moskva Alpatova Method and device for electromechanical current control
DE102008008931B3 (en) * 2008-02-13 2009-07-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Device for operating electrical signal of integrated circuit, has component, which has p-doped area with connection and n-doped area with another connection, and another component is provided, which is coupled with former component

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2504627A (en) * 1946-03-01 1950-04-18 Purdue Research Foundation Electrical device with germanium alloys
US2795742A (en) * 1952-12-12 1957-06-11 Bell Telephone Labor Inc Semiconductive translating devices utilizing selected natural grain boundaries
US2790089A (en) * 1953-03-23 1957-04-23 Nat Aircraft Corp Three-element semi-conductor device
US2792539A (en) * 1953-07-07 1957-05-14 Sprague Electric Co Transistor construction
US2946114A (en) * 1957-04-03 1960-07-26 Automatic Elect Lab Method of assembling junction transistor
DE1084382B (en) * 1957-07-15 1960-06-30 Raytheon Mfg Co Semiconductor arrangement with a semiconductor body composed of two zones of opposite conductivity type

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1267437B (en) * 1965-03-12 1968-05-02 Telefunken Patent Use of an arrangement containing a transistor for converting mechanical into electrical energy

Also Published As

Publication number Publication date
GB1055725A (en) 1967-01-18
DE1231032B (en) 1966-12-22
NL6403888A (en) 1964-10-12
BE646415A (en) 1964-10-12

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