CH387803A - Method and device for doping semiconductor crystals from the gas phase - Google Patents

Method and device for doping semiconductor crystals from the gas phase

Info

Publication number
CH387803A
CH387803A CH875960A CH875960A CH387803A CH 387803 A CH387803 A CH 387803A CH 875960 A CH875960 A CH 875960A CH 875960 A CH875960 A CH 875960A CH 387803 A CH387803 A CH 387803A
Authority
CH
Switzerland
Prior art keywords
gas phase
doping semiconductor
semiconductor crystals
crystals
doping
Prior art date
Application number
CH875960A
Other languages
German (de)
Inventor
Weissfloch Andreas
Frodl Otto
Heinz Dr Dorendorf
Reinhard Dr Dahlberg
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH387803A publication Critical patent/CH387803A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CH875960A 1959-08-07 1960-08-02 Method and device for doping semiconductor crystals from the gas phase CH387803A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES64342A DE1100820B (en) 1959-08-07 1959-08-07 Device for the production of semiconductor arrangements by doping semiconductor bodies from the gas phase and method using such a device

Publications (1)

Publication Number Publication Date
CH387803A true CH387803A (en) 1965-02-15

Family

ID=7497114

Family Applications (1)

Application Number Title Priority Date Filing Date
CH875960A CH387803A (en) 1959-08-07 1960-08-02 Method and device for doping semiconductor crystals from the gas phase

Country Status (4)

Country Link
CH (1) CH387803A (en)
DE (1) DE1100820B (en)
GB (1) GB907164A (en)
NL (1) NL254549A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2849240C2 (en) * 1978-11-13 1983-01-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen CVD coating device for small parts and their use
FR2542432B1 (en) * 1983-03-08 1985-07-19 Centre Nat Etd Spatiales TRANSPARENT HEATING DEVICE COMPRISING AT LEAST TWO DIFFERENT TEMPERATURE ZONES
CN101942697B (en) * 2010-08-23 2012-11-14 清华大学 Evacuating device of temperature thermocouple casing of photovoltaic polycrystalline silicon ingot casting furnace

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2742383A (en) * 1952-08-09 1956-04-17 Hughes Aircraft Co Germanium junction-type semiconductor devices
NL215875A (en) * 1956-05-18
DE1040799B (en) * 1957-03-15 1958-10-09 Telefunken Gmbh Arrangement for high cleaning and / or doping of a semiconductor body

Also Published As

Publication number Publication date
NL254549A (en)
DE1100820B (en) 1961-03-02
GB907164A (en) 1962-10-03

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