CH328249A - Dispositif électronique comprenant un corps semi-conducteur - Google Patents
Dispositif électronique comprenant un corps semi-conducteurInfo
- Publication number
- CH328249A CH328249A CH328249DA CH328249A CH 328249 A CH328249 A CH 328249A CH 328249D A CH328249D A CH 328249DA CH 328249 A CH328249 A CH 328249A
- Authority
- CH
- Switzerland
- Prior art keywords
- electronic device
- semiconductor body
- semiconductor
- electronic
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/16—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture specially for use as rectifiers or detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US386580A US2870344A (en) | 1953-10-16 | 1953-10-16 | Semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
CH328249A true CH328249A (fr) | 1958-02-28 |
Family
ID=23526190
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH328249D CH328249A (fr) | 1953-10-16 | 1954-10-14 | Dispositif électronique comprenant un corps semi-conducteur |
Country Status (6)
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2998550A (en) * | 1954-06-30 | 1961-08-29 | Rca Corp | Apparatus for powering a plurality of semi-conducting units from a single radioactive battery |
US3017548A (en) * | 1958-01-20 | 1962-01-16 | Bell Telephone Labor Inc | Signal translating device |
US3114658A (en) * | 1959-10-22 | 1963-12-17 | Philco Corp | Electric cell |
US3271198A (en) * | 1959-12-30 | 1966-09-06 | Ibm | Electrolytic semiconductor photocell |
DE1414950A1 (de) * | 1960-06-27 | 1968-10-03 | Univ New York | Stromleitungsvorrichtung |
US3255391A (en) * | 1960-11-25 | 1966-06-07 | Yamamoto Keita | Electrochemical apparatus |
US3274403A (en) * | 1961-05-26 | 1966-09-20 | Hoffman Electronics Corp | Gaseous thermocouple utilizing a semiconductor |
US3879228A (en) * | 1972-03-06 | 1975-04-22 | Us Air Force | Photo-regenerative electrochemical energy converter |
US3925212A (en) * | 1974-01-02 | 1975-12-09 | Dimiter I Tchernev | Device for solar energy conversion by photo-electrolytic decomposition of water |
US4124464A (en) * | 1977-10-19 | 1978-11-07 | Rca Corporation | Grooved n-type TiO2 semiconductor anode for a water photolysis apparatus |
DE3917702A1 (de) * | 1989-05-31 | 1990-12-06 | Siemens Ag | Verfahren zur ortsaufgeloesten bestimmung der diffusionslaenge von minoritaetsladungstraegern in einem halbleiterkristallkoerper mit hilfe einer elektrolytischen zelle |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE484779A (US07235543-20070626-C00056.png) * | 1948-02-26 | |||
BE489418A (US07235543-20070626-C00056.png) * | 1948-06-26 | |||
US2569347A (en) * | 1948-06-26 | 1951-09-25 | Bell Telephone Labor Inc | Circuit element utilizing semiconductive material |
BE491495A (US07235543-20070626-C00056.png) * | 1948-12-29 | |||
US2713644A (en) * | 1954-06-29 | 1955-07-19 | Rca Corp | Self-powered semiconductor devices |
-
0
- NL NL190984D patent/NL190984A/xx unknown
- BE BE532508D patent/BE532508A/xx unknown
-
1953
- 1953-10-16 US US386580A patent/US2870344A/en not_active Expired - Lifetime
-
1954
- 1954-06-09 FR FR1106324D patent/FR1106324A/fr not_active Expired
- 1954-09-14 DE DEW14876A patent/DE1021955B/de active Pending
- 1954-10-14 CH CH328249D patent/CH328249A/fr unknown
Also Published As
Publication number | Publication date |
---|---|
US2870344A (en) | 1959-01-20 |
BE532508A (US07235543-20070626-C00056.png) | |
NL190984A (US07235543-20070626-C00056.png) | |
FR1106324A (fr) | 1955-12-16 |
DE1021955B (de) | 1958-01-02 |
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