CH263777A - Process for the production of a semiconducting material for crystal rectifiers. - Google Patents

Process for the production of a semiconducting material for crystal rectifiers.

Info

Publication number
CH263777A
CH263777A CH263777DA CH263777A CH 263777 A CH263777 A CH 263777A CH 263777D A CH263777D A CH 263777DA CH 263777 A CH263777 A CH 263777A
Authority
CH
Switzerland
Prior art keywords
production
semiconducting material
crystal rectifiers
rectifiers
crystal
Prior art date
Application number
Other languages
German (de)
Inventor
Limited The General El Company
Original Assignee
Gen Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric Co Ltd filed Critical Gen Electric Co Ltd
Publication of CH263777A publication Critical patent/CH263777A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Contacts (AREA)
  • Conductive Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CH263777D 1941-12-19 1946-08-21 Process for the production of a semiconducting material for crystal rectifiers. CH263777A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB16431/41A GB577976A (en) 1941-12-19 1941-12-19 Improvements in the manufacture of silicon material for crystal contacts

Publications (1)

Publication Number Publication Date
CH263777A true CH263777A (en) 1949-09-15

Family

ID=10077194

Family Applications (1)

Application Number Title Priority Date Filing Date
CH263777D CH263777A (en) 1941-12-19 1946-08-21 Process for the production of a semiconducting material for crystal rectifiers.

Country Status (6)

Country Link
US (1) US2428992A (en)
BE (1) BE466804A (en)
CH (1) CH263777A (en)
FR (1) FR927777A (en)
GB (1) GB577976A (en)
NL (1) NL67322C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1012696B (en) * 1954-07-06 1957-07-25 Siemens Ag Semiconductor transition between zones of different conduction types and process for producing the transition

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE503719A (en) * 1950-06-15
NL178757B (en) * 1952-06-02 British Steel Corp METHOD AND DEVICE FOR THE CONTINUOUS PRODUCTION OF A METAL STRIP FROM METAL POWDER.
BE531626A (en) * 1953-09-04
US3010857A (en) * 1954-03-01 1961-11-28 Rca Corp Semi-conductor devices and methods of making same
US2859141A (en) * 1954-04-30 1958-11-04 Raytheon Mfg Co Method for making a semiconductor junction
US2957788A (en) * 1955-02-08 1960-10-25 Rca Corp Alloy junction type semiconductor devices and methods of making them
GB794128A (en) * 1955-08-04 1958-04-30 Gen Electric Co Ltd Improvements in or relating to methods of forming a junction in a semiconductor
US3097068A (en) * 1959-05-29 1963-07-09 Union Carbide Corp Crystallization of pure silicon platelets
NL131271C (en) * 1960-01-18

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1012696B (en) * 1954-07-06 1957-07-25 Siemens Ag Semiconductor transition between zones of different conduction types and process for producing the transition

Also Published As

Publication number Publication date
NL67322C (en)
GB577976A (en) 1946-06-11
FR927777A (en) 1947-11-10
US2428992A (en) 1947-10-14
BE466804A (en)

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