CA978659A - Capacitance diode having a large capacitance ratio - Google Patents

Capacitance diode having a large capacitance ratio

Info

Publication number
CA978659A
CA978659A CA151,985A CA151985A CA978659A CA 978659 A CA978659 A CA 978659A CA 151985 A CA151985 A CA 151985A CA 978659 A CA978659 A CA 978659A
Authority
CA
Canada
Prior art keywords
capacitance
ratio
diode
capacitance diode
large capacitance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA151,985A
Other versions
CA151985S (en
Inventor
Heinz Sauermann
Gerhard Winkler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA978659A publication Critical patent/CA978659A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92Capacitors having potential barriers
    • H01L29/93Variable capacitance diodes, e.g. varactors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
CA151,985A 1971-09-22 1972-09-18 Capacitance diode having a large capacitance ratio Expired CA978659A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712147291 DE2147291C3 (en) 1971-09-22 1971-09-22 Variable capacitance diode with a large capacitance swing and process for its manufacture

Publications (1)

Publication Number Publication Date
CA978659A true CA978659A (en) 1975-11-25

Family

ID=5820267

Family Applications (1)

Application Number Title Priority Date Filing Date
CA151,985A Expired CA978659A (en) 1971-09-22 1972-09-18 Capacitance diode having a large capacitance ratio

Country Status (7)

Country Link
JP (1) JPS5144070B2 (en)
CA (1) CA978659A (en)
DE (1) DE2147291C3 (en)
FR (1) FR2153414B1 (en)
GB (1) GB1388321A (en)
IT (1) IT975019B (en)
NL (1) NL7212603A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1085486B (en) * 1977-05-30 1985-05-28 Ates Componenti Elettron INTEGRATED MONOLITHIC SEMICONDUCTOR STRUCTURE WITH PLANAR JUNCTIONS SCREENED BY EXTERNAL ELECTROSTATIC FIELDS
US7956438B2 (en) * 2008-11-21 2011-06-07 Xilinx, Inc. Integrated capacitor with interlinked lateral fins

Also Published As

Publication number Publication date
JPS4840388A (en) 1973-06-13
DE2147291C3 (en) 1980-09-18
NL7212603A (en) 1973-03-26
DE2147291B2 (en) 1978-10-12
DE2147291A1 (en) 1973-03-29
FR2153414A1 (en) 1973-05-04
IT975019B (en) 1974-07-20
JPS5144070B2 (en) 1976-11-26
FR2153414B1 (en) 1977-08-26
GB1388321A (en) 1975-03-26

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