CA978280A - Microampere space charge limited transistor - Google Patents

Microampere space charge limited transistor

Info

Publication number
CA978280A
CA978280A CA159,072A CA159072A CA978280A CA 978280 A CA978280 A CA 978280A CA 159072 A CA159072 A CA 159072A CA 978280 A CA978280 A CA 978280A
Authority
CA
Canada
Prior art keywords
microampere
space charge
charge limited
limited transistor
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA159,072A
Other languages
English (en)
Other versions
CA159072S (en
Inventor
Kanu Ashar
Steven Magdo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA978280A publication Critical patent/CA978280A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/003—Anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/036—Diffusion, nonselective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CA159,072A 1971-12-17 1972-12-13 Microampere space charge limited transistor Expired CA978280A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00209233A US3840886A (en) 1971-12-17 1971-12-17 Microampere space charge limited transistor

Publications (1)

Publication Number Publication Date
CA978280A true CA978280A (en) 1975-11-18

Family

ID=22777910

Family Applications (1)

Application Number Title Priority Date Filing Date
CA159,072A Expired CA978280A (en) 1971-12-17 1972-12-13 Microampere space charge limited transistor

Country Status (12)

Country Link
US (1) US3840886A (it)
JP (1) JPS5128989B2 (it)
AU (1) AU459526B2 (it)
BE (1) BE792639A (it)
CA (1) CA978280A (it)
CH (1) CH545539A (it)
ES (1) ES409701A1 (it)
FR (1) FR2163477B1 (it)
GB (1) GB1337906A (it)
IT (1) IT969981B (it)
NL (1) NL7215421A (it)
SE (1) SE374622B (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3894891A (en) * 1973-12-26 1975-07-15 Ibm Method for making a space charge limited transistor having recessed dielectric isolation
US3936856A (en) * 1974-05-28 1976-02-03 International Business Machines Corporation Space-charge-limited integrated circuit structure
US3958264A (en) * 1974-06-24 1976-05-18 International Business Machines Corporation Space-charge-limited phototransistor
US4937640A (en) * 1980-11-03 1990-06-26 International Business Machines Corporation Short channel MOSFET
GB2151078B (en) * 1983-11-29 1987-09-23 Sony Corp Semiconductor devices
JPS6174369A (ja) * 1984-09-20 1986-04-16 Sony Corp 半導体装置
DE60203104D1 (de) * 2002-06-26 2005-04-07 St Microelectronics Nv Radiofrequenz-Schalter, insbesondere für ein zellulares Mobiltelefon

Also Published As

Publication number Publication date
BE792639A (fr) 1973-03-30
ES409701A1 (es) 1976-01-01
FR2163477B1 (it) 1975-05-30
AU459526B2 (en) 1975-03-27
CH545539A (it) 1974-01-31
FR2163477A1 (it) 1973-07-27
JPS5128989B2 (it) 1976-08-23
SE374622B (it) 1975-03-10
JPS4868179A (it) 1973-09-17
DE2259256B2 (de) 1976-08-26
DE2259256A1 (de) 1973-06-28
IT969981B (it) 1974-04-10
AU4870672A (en) 1974-05-09
US3840886A (en) 1974-10-08
NL7215421A (it) 1973-06-19
GB1337906A (en) 1973-11-21

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