CA972872A - Double mesa transistor with integral bleeder resistors - Google Patents

Double mesa transistor with integral bleeder resistors

Info

Publication number
CA972872A
CA972872A CA174,647A CA174647A CA972872A CA 972872 A CA972872 A CA 972872A CA 174647 A CA174647 A CA 174647A CA 972872 A CA972872 A CA 972872A
Authority
CA
Canada
Prior art keywords
integral
bleeder resistors
mesa transistor
double mesa
double
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA174,647A
Other languages
English (en)
Other versions
CA174647S (en
Inventor
Robert W. Metzger (Jr.)
Glen E. Harland (Jr.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motors Liquidation Co
Original Assignee
Motors Liquidation Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motors Liquidation Co filed Critical Motors Liquidation Co
Application granted granted Critical
Publication of CA972872A publication Critical patent/CA972872A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0772Vertical bipolar transistor in combination with resistors only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
CA174,647A 1972-10-24 1973-06-21 Double mesa transistor with integral bleeder resistors Expired CA972872A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00300207A US3821780A (en) 1972-10-24 1972-10-24 Double mesa transistor with integral bleeder resistors

Publications (1)

Publication Number Publication Date
CA972872A true CA972872A (en) 1975-08-12

Family

ID=23158148

Family Applications (1)

Application Number Title Priority Date Filing Date
CA174,647A Expired CA972872A (en) 1972-10-24 1973-06-21 Double mesa transistor with integral bleeder resistors

Country Status (5)

Country Link
US (1) US3821780A ( )
AU (1) AU6125673A ( )
CA (1) CA972872A ( )
DE (1) DE2353333C3 ( )
GB (1) GB1398368A ( )

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL176322C (nl) * 1976-02-24 1985-03-18 Philips Nv Halfgeleiderinrichting met beveiligingsschakeling.
US4291319A (en) * 1976-05-19 1981-09-22 National Semiconductor Corporation Open base bipolar transistor protective device
US4236171A (en) * 1978-07-17 1980-11-25 International Rectifier Corporation High power transistor having emitter pattern with symmetric lead connection pads
US4486770A (en) * 1981-04-27 1984-12-04 General Motors Corporation Isolated integrated circuit transistor with transient protection
JPS6081660U (ja) * 1983-11-10 1985-06-06 富士電機株式会社 ダ−リントントランジスタ
US4783694A (en) * 1984-03-16 1988-11-08 Motorola Inc. Integrated bipolar-MOS semiconductor device with common collector and drain

Also Published As

Publication number Publication date
DE2353333B2 (de) 1978-02-02
DE2353333A1 (de) 1974-05-02
DE2353333C3 (de) 1978-10-12
AU469567B2 ( ) 1976-02-19
US3821780A (en) 1974-06-28
AU6125673A (en) 1975-04-17
GB1398368A (en) 1975-06-18

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