CA968443A - Double heterojunctions laser containing intermediate homojunction - Google Patents

Double heterojunctions laser containing intermediate homojunction

Info

Publication number
CA968443A
CA968443A CA145,418A CA145418A CA968443A CA 968443 A CA968443 A CA 968443A CA 145418 A CA145418 A CA 145418A CA 968443 A CA968443 A CA 968443A
Authority
CA
Canada
Prior art keywords
homojunction
containing intermediate
laser containing
double heterojunctions
heterojunctions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA145,418A
Other languages
English (en)
Other versions
CA145418S (en
Inventor
Lucian A. D'asaro
Jose E. Ripper
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of CA968443A publication Critical patent/CA968443A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
CA145,418A 1971-12-01 1972-06-22 Double heterojunctions laser containing intermediate homojunction Expired CA968443A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US20370971A 1971-12-01 1971-12-01

Publications (1)

Publication Number Publication Date
CA968443A true CA968443A (en) 1975-05-27

Family

ID=22754996

Family Applications (1)

Application Number Title Priority Date Filing Date
CA145,418A Expired CA968443A (en) 1971-12-01 1972-06-22 Double heterojunctions laser containing intermediate homojunction

Country Status (9)

Country Link
JP (1) JPS4865881A (fr)
BE (1) BE791928A (fr)
CA (1) CA968443A (fr)
DE (1) DE2258087A1 (fr)
FR (1) FR2162123B1 (fr)
GB (1) GB1363796A (fr)
IT (1) IT975901B (fr)
NL (1) NL7216051A (fr)
SE (1) SE375188B (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3838359A (en) * 1973-11-23 1974-09-24 Bell Telephone Labor Inc Gain asymmetry in heterostructure junction lasers operating in a fundamental transverse mode
US4864369A (en) * 1988-07-05 1989-09-05 Hewlett-Packard Company P-side up double heterojunction AlGaAs light-emitting diode

Also Published As

Publication number Publication date
JPS4865881A (fr) 1973-09-10
SE375188B (fr) 1975-04-07
IT975901B (it) 1974-08-10
GB1363796A (en) 1974-08-14
BE791928A (fr) 1973-03-16
FR2162123A1 (fr) 1973-07-13
DE2258087A1 (de) 1973-06-07
NL7216051A (fr) 1973-06-05
FR2162123B1 (fr) 1977-04-08

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