CA884037A - Method of forming field-effect transistors utilizing doped insulators as activator source - Google Patents

Method of forming field-effect transistors utilizing doped insulators as activator source

Info

Publication number
CA884037A
CA884037A CA884037A CA884037DA CA884037A CA 884037 A CA884037 A CA 884037A CA 884037 A CA884037 A CA 884037A CA 884037D A CA884037D A CA 884037DA CA 884037 A CA884037 A CA 884037A
Authority
CA
Canada
Prior art keywords
effect transistors
forming field
transistors utilizing
activator source
utilizing doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA884037A
Inventor
M. Brown Dale
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Publication date
Application granted granted Critical
Publication of CA884037A publication Critical patent/CA884037A/en
Expired legal-status Critical Current

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CA884037A Method of forming field-effect transistors utilizing doped insulators as activator source Expired CA884037A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA884037T

Publications (1)

Publication Number Publication Date
CA884037A true CA884037A (en) 1971-10-19

Family

ID=36390375

Family Applications (1)

Application Number Title Priority Date Filing Date
CA884037A Expired CA884037A (en) Method of forming field-effect transistors utilizing doped insulators as activator source

Country Status (1)

Country Link
CA (1) CA884037A (en)

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