CA878170A - Field effect controlled switch - Google Patents

Field effect controlled switch

Info

Publication number
CA878170A
CA878170A CA878170A CA51224A CA878170A CA 878170 A CA878170 A CA 878170A CA 878170 A CA878170 A CA 878170A CA 51224 A CA51224 A CA 51224A CA 878170 A CA878170 A CA 878170A
Authority
CA
Canada
Prior art keywords
field effect
controlled switch
effect controlled
switch
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA878170A
Other languages
English (en)
Inventor
L. D. Eng Hung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
Northern Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Electric Co Ltd filed Critical Northern Electric Co Ltd
Priority to CA878170A priority Critical patent/CA878170A/en
Priority to NL7006758A priority patent/NL7006758A/xx
Priority to FR7017072A priority patent/FR2044780A1/fr
Priority to DE19702022925 priority patent/DE2022925A1/de
Priority to BE750286D priority patent/BE750286A/xx
Application granted granted Critical
Publication of CA878170A publication Critical patent/CA878170A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/40—Thyristors with turn-on by field effect 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H10D18/65—Gate-turn-off devices  with turn-off by field effect 
    • H10D18/655—Gate-turn-off devices  with turn-off by field effect  produced by insulated gate structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/133—Thyristors having built-in components the built-in components being capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
CA878170A 1969-05-12 1969-05-12 Field effect controlled switch Expired CA878170A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CA878170A CA878170A (en) 1969-05-12 1969-05-12 Field effect controlled switch
NL7006758A NL7006758A (enExample) 1969-05-12 1970-05-11
FR7017072A FR2044780A1 (enExample) 1969-05-12 1970-05-11
DE19702022925 DE2022925A1 (de) 1969-05-12 1970-05-11 Halbleiterschalter-Bauelement
BE750286D BE750286A (fr) 1969-05-12 1970-05-12 Commutateur commande a effet de champ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA878170A CA878170A (en) 1969-05-12 1969-05-12 Field effect controlled switch

Publications (1)

Publication Number Publication Date
CA878170A true CA878170A (en) 1971-08-10

Family

ID=4085242

Family Applications (1)

Application Number Title Priority Date Filing Date
CA878170A Expired CA878170A (en) 1969-05-12 1969-05-12 Field effect controlled switch

Country Status (5)

Country Link
BE (1) BE750286A (enExample)
CA (1) CA878170A (enExample)
DE (1) DE2022925A1 (enExample)
FR (1) FR2044780A1 (enExample)
NL (1) NL7006758A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5135114B1 (enExample) * 1970-12-28 1976-09-30
DE3019883A1 (de) * 1980-05-23 1981-12-03 Siemens AG, 1000 Berlin und 8000 München Zweirichtungsthyristor
GB9106205D0 (en) * 1991-03-22 1991-05-08 Lucas Ind Plc Breakover diode

Also Published As

Publication number Publication date
NL7006758A (enExample) 1970-11-16
BE750286A (fr) 1970-10-16
DE2022925A1 (de) 1970-11-26
FR2044780A1 (enExample) 1971-02-26

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