CA602880A - Electrolytic etching of semiconductors - Google Patents
Electrolytic etching of semiconductorsInfo
- Publication number
- CA602880A CA602880A CA602880A CA602880DA CA602880A CA 602880 A CA602880 A CA 602880A CA 602880 A CA602880 A CA 602880A CA 602880D A CA602880D A CA 602880DA CA 602880 A CA602880 A CA 602880A
- Authority
- CA
- Canada
- Prior art keywords
- semiconductors
- electrolytic etching
- electrolytic
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA602880T |
Publications (1)
Publication Number | Publication Date |
---|---|
CA602880A true CA602880A (en) | 1960-08-02 |
Family
ID=35818676
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA602880A Expired CA602880A (en) | Electrolytic etching of semiconductors |
Country Status (1)
Country | Link |
---|---|
CA (1) | CA602880A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3485731A (en) * | 1966-05-09 | 1969-12-23 | Matsushita Electronics Corp | Process for electrolytically etching indium arsenide |
US3527682A (en) * | 1967-04-24 | 1970-09-08 | Philco Ford Corp | Process for electrolytically etching indium antimonide |
US3537962A (en) * | 1968-09-03 | 1970-11-03 | Comp Generale Electricite | Method of selectively etching silicon |
-
0
- CA CA602880A patent/CA602880A/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3485731A (en) * | 1966-05-09 | 1969-12-23 | Matsushita Electronics Corp | Process for electrolytically etching indium arsenide |
US3527682A (en) * | 1967-04-24 | 1970-09-08 | Philco Ford Corp | Process for electrolytically etching indium antimonide |
US3537962A (en) * | 1968-09-03 | 1970-11-03 | Comp Generale Electricite | Method of selectively etching silicon |
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