CA3104593A1 - Pellicules euv - Google Patents
Pellicules euv Download PDFInfo
- Publication number
- CA3104593A1 CA3104593A1 CA3104593A CA3104593A CA3104593A1 CA 3104593 A1 CA3104593 A1 CA 3104593A1 CA 3104593 A CA3104593 A CA 3104593A CA 3104593 A CA3104593 A CA 3104593A CA 3104593 A1 CA3104593 A1 CA 3104593A1
- Authority
- CA
- Canada
- Prior art keywords
- pellicle
- core
- silicon carbide
- layer
- adhesion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 83
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 83
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 61
- 238000000034 method Methods 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 22
- 239000011162 core material Substances 0.000 claims description 71
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 239000010703 silicon Substances 0.000 claims description 29
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 19
- 238000001459 lithography Methods 0.000 claims description 11
- 229910021389 graphene Inorganic materials 0.000 claims description 9
- -1 C3N4 Inorganic materials 0.000 claims description 8
- 238000001900 extreme ultraviolet lithography Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910020968 MoSi2 Inorganic materials 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 143
- 230000005855 radiation Effects 0.000 description 78
- 239000000758 substrate Substances 0.000 description 21
- 230000003595 spectral effect Effects 0.000 description 19
- 238000000059 patterning Methods 0.000 description 17
- 229910052739 hydrogen Inorganic materials 0.000 description 16
- 239000001257 hydrogen Substances 0.000 description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- 238000005286 illumination Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 239000000446 fuel Substances 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 239000003575 carbonaceous material Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 239000012792 core layer Substances 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 230000002028 premature Effects 0.000 description 3
- 210000001747 pupil Anatomy 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 210000000887 face Anatomy 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 210000003128 head Anatomy 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920005620 poly(methylsilyne) Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
La présente invention concerne une pellicule comprenant un noyau comprenant un matériau autre que le carbure de silicium, une couche d'adhérence en carbure de silicium et une couche de recouvrement en ruthénium, la couche de recouvrement en ruthénium étant en contact avec la couche d'adhérence en carbure de silicium. L'invention concerne également un procédé de préparation d'une pellicule comprenant les étapes consistant à : (i) fournir un noyau de pellicule ; (ii) fournir une couche d'adhérence en carbure de silicium sur le noyau de pellicule ; et (iii) fournir une couche de recouvrement en ruthénium qui est en contact avec la couche d'adhérence en carbure de silicium. L'invention concerne également l'utilisation de carbure de silicium en tant que couche d'adhérence dans une pellicule EUV ainsi que dans un ensemble.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP18179320.9 | 2018-06-22 | ||
| EP18179320 | 2018-06-22 | ||
| EP18203954.5 | 2018-11-01 | ||
| EP18203954 | 2018-11-01 | ||
| PCT/EP2019/063895 WO2019243009A1 (fr) | 2018-06-22 | 2019-05-29 | Pellicules euv |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA3104593A1 true CA3104593A1 (fr) | 2019-12-26 |
Family
ID=66776313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA3104593A Pending CA3104593A1 (fr) | 2018-06-22 | 2019-05-29 | Pellicules euv |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP3811151A1 (fr) |
| KR (1) | KR20210022001A (fr) |
| CN (1) | CN112334832A (fr) |
| CA (1) | CA3104593A1 (fr) |
| NL (1) | NL2023229B1 (fr) |
| TW (1) | TWI822799B (fr) |
| WO (1) | WO2019243009A1 (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019091932A1 (fr) * | 2017-11-10 | 2019-05-16 | Asml Netherlands B.V. | Pellicules euv |
| NL2027098B1 (en) * | 2020-01-16 | 2021-10-14 | Asml Netherlands Bv | Pellicle membrane for a lithographic apparatus |
| KR20230112840A (ko) | 2022-01-21 | 2023-07-28 | 한국표준과학연구원 | 펠리클 성능 평가 시스템 및 방법 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8198612B2 (en) * | 2008-07-31 | 2012-06-12 | Cymer, Inc. | Systems and methods for heating an EUV collector mirror |
| US20130250260A1 (en) * | 2012-03-23 | 2013-09-26 | Globalfoundries Inc. | Pellicles for use during euv photolithography processes |
| DE102012207141A1 (de) * | 2012-04-27 | 2013-10-31 | Carl Zeiss Laser Optics Gmbh | Verfahren zur Reparatur von optischen Elementen sowie optisches Element |
| DE102014218084A1 (de) * | 2014-09-10 | 2014-11-13 | Carl Zeiss Smt Gmbh | Verfahren zur herstellung oxid - basierter deckschichten für hochreflektierende euv - multischichten |
| KR102246875B1 (ko) * | 2014-11-13 | 2021-04-30 | 삼성전자 주식회사 | 그라파이트 층을 갖는 펠리클을 제조하는 방법 |
| KR20180072786A (ko) * | 2015-10-22 | 2018-06-29 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치를 위한 펠리클 제조 방법, 리소그래피 장치를 위한 펠리클 장치, 리소그래피 장치, 디바이스 제조 방법, 펠리클 처리 장치, 및 펠리클 처리 방법 |
| US9759997B2 (en) * | 2015-12-17 | 2017-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pellicle assembly and method for advanced lithography |
| KR101813185B1 (ko) * | 2016-06-30 | 2018-01-30 | 삼성전자주식회사 | 포토마스크용 펠리클 및 이를 포함하는 노광 장치 |
-
2019
- 2019-05-29 KR KR1020207036942A patent/KR20210022001A/ko unknown
- 2019-05-29 NL NL2023229A patent/NL2023229B1/en active
- 2019-05-29 CN CN201980042099.2A patent/CN112334832A/zh active Pending
- 2019-05-29 CA CA3104593A patent/CA3104593A1/fr active Pending
- 2019-05-29 EP EP19728916.8A patent/EP3811151A1/fr active Pending
- 2019-05-29 WO PCT/EP2019/063895 patent/WO2019243009A1/fr active Application Filing
- 2019-06-19 TW TW108121192A patent/TWI822799B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| EP3811151A1 (fr) | 2021-04-28 |
| TWI822799B (zh) | 2023-11-21 |
| TW202010861A (zh) | 2020-03-16 |
| WO2019243009A1 (fr) | 2019-12-26 |
| NL2023229B1 (en) | 2020-01-24 |
| KR20210022001A (ko) | 2021-03-02 |
| CN112334832A (zh) | 2021-02-05 |
| NL2023229A (en) | 2020-01-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request |
Effective date: 20220929 |
|
| EEER | Examination request |
Effective date: 20220929 |
|
| EEER | Examination request |
Effective date: 20220929 |
|
| EEER | Examination request |
Effective date: 20220929 |
|
| EEER | Examination request |
Effective date: 20220929 |
|
| EEER | Examination request |
Effective date: 20220929 |