CA3013818A1 - Cellule photovoltaique a heterojonction et methode de preparation associee - Google Patents
Cellule photovoltaique a heterojonction et methode de preparation associee Download PDFInfo
- Publication number
- CA3013818A1 CA3013818A1 CA3013818A CA3013818A CA3013818A1 CA 3013818 A1 CA3013818 A1 CA 3013818A1 CA 3013818 A CA3013818 A CA 3013818A CA 3013818 A CA3013818 A CA 3013818A CA 3013818 A1 CA3013818 A1 CA 3013818A1
- Authority
- CA
- Canada
- Prior art keywords
- layer
- conductive film
- transparent conductive
- main grid
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 108
- 239000002184 metal Substances 0.000 claims abstract description 108
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 105
- 239000000758 substrate Substances 0.000 claims abstract description 105
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 70
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 70
- 239000010703 silicon Substances 0.000 claims abstract description 70
- 238000000034 method Methods 0.000 claims abstract description 46
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 99
- 229910052709 silver Inorganic materials 0.000 claims description 99
- 239000004332 silver Substances 0.000 claims description 99
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 69
- 238000000151 deposition Methods 0.000 claims description 54
- 238000004544 sputter deposition Methods 0.000 claims description 22
- 238000007650 screen-printing Methods 0.000 claims description 21
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- HBVFXTAPOLSOPB-UHFFFAOYSA-N nickel vanadium Chemical compound [V].[Ni] HBVFXTAPOLSOPB-UHFFFAOYSA-N 0.000 claims description 12
- -1 silver aluminum Chemical compound 0.000 claims description 12
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- 238000005240 physical vapour deposition Methods 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 7
- 238000003466 welding Methods 0.000 description 17
- 230000008569 process Effects 0.000 description 14
- 230000006866 deterioration Effects 0.000 description 8
- 239000002674 ointment Substances 0.000 description 8
- 238000000137 annealing Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 238000001035 drying Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711132081.0 | 2017-11-15 | ||
| CN201711132081.0A CN108091719A (zh) | 2017-11-15 | 2017-11-15 | 异质结太阳能电池及其制备方法 |
| PCT/CN2018/099038 WO2019095731A1 (fr) | 2017-11-15 | 2018-08-06 | Cellule solaire à hétérojonction et son procédé de préparation |
| CNPCT/CN2018/099038 | 2018-08-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA3013818A1 true CA3013818A1 (fr) | 2019-05-15 |
Family
ID=63209306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA3013818A Abandoned CA3013818A1 (fr) | 2017-11-15 | 2018-08-10 | Cellule photovoltaique a heterojonction et methode de preparation associee |
Country Status (2)
| Country | Link |
|---|---|
| EP (1) | EP3486953A1 (fr) |
| CA (1) | CA3013818A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114823935A (zh) * | 2022-05-16 | 2022-07-29 | 东方日升新能源股份有限公司 | 一种异质结电池及其制备方法 |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111584669B (zh) * | 2020-05-29 | 2022-05-27 | 中威新能源(成都)有限公司 | 一种硅异质结shj太阳能电池及其制备方法 |
| US11075308B1 (en) | 2020-06-19 | 2021-07-27 | Pharos Materials, Inc. | Vanadium-containing electrodes and interconnects to transparent conductors |
| CN114203851B (zh) * | 2020-09-01 | 2024-08-23 | 嘉兴阿特斯技术研究院有限公司 | 异质结太阳能电池和制备异质结太阳能电池的方法 |
| CN113555453A (zh) * | 2021-01-05 | 2021-10-26 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | 一种异质结太阳能电池及制备方法 |
| CN113871495A (zh) * | 2021-08-16 | 2021-12-31 | 东方日升新能源股份有限公司 | 异质结电池片及其加工方法以及电池组件 |
| CN115172505A (zh) * | 2022-08-22 | 2022-10-11 | 拉普拉斯(无锡)半导体科技有限公司 | 一种hjt太阳能电池及其制造设备与制造方法 |
| CN116230813A (zh) * | 2023-04-26 | 2023-06-06 | 合肥华晟光伏科技有限公司 | 异质结电池的制备方法及成膜设备 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106601855A (zh) * | 2015-10-14 | 2017-04-26 | 钧石(中国)能源有限公司 | 一种双面发电异质结太阳能电池的制备方法 |
-
2018
- 2018-08-10 EP EP18188531.0A patent/EP3486953A1/fr not_active Withdrawn
- 2018-08-10 CA CA3013818A patent/CA3013818A1/fr not_active Abandoned
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114823935A (zh) * | 2022-05-16 | 2022-07-29 | 东方日升新能源股份有限公司 | 一种异质结电池及其制备方法 |
| CN114823935B (zh) * | 2022-05-16 | 2024-05-03 | 东方日升新能源股份有限公司 | 一种异质结电池及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3486953A1 (fr) | 2019-05-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Dead |
Effective date: 20210115 |