CA2561630A1 - Detecteur segmente de rayonnement avec cathode de protection laterale - Google Patents

Detecteur segmente de rayonnement avec cathode de protection laterale Download PDF

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Publication number
CA2561630A1
CA2561630A1 CA002561630A CA2561630A CA2561630A1 CA 2561630 A1 CA2561630 A1 CA 2561630A1 CA 002561630 A CA002561630 A CA 002561630A CA 2561630 A CA2561630 A CA 2561630A CA 2561630 A1 CA2561630 A1 CA 2561630A1
Authority
CA
Canada
Prior art keywords
detector
cathode
substrate
sides
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002561630A
Other languages
English (en)
Inventor
Henry Chen
Salah Awadalla
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Redlen Technologies Inc
Original Assignee
Redlen Technologies
Henry Chen
Salah Awadalla
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CA 2541256 external-priority patent/CA2541256A1/fr
Application filed by Redlen Technologies, Henry Chen, Salah Awadalla filed Critical Redlen Technologies
Priority to CA002561630A priority Critical patent/CA2561630A1/fr
Publication of CA2561630A1 publication Critical patent/CA2561630A1/fr
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
CA002561630A 2006-02-22 2006-09-29 Detecteur segmente de rayonnement avec cathode de protection laterale Abandoned CA2561630A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA002561630A CA2561630A1 (fr) 2006-02-22 2006-09-29 Detecteur segmente de rayonnement avec cathode de protection laterale

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CA 2541256 CA2541256A1 (fr) 2006-02-22 2006-02-22 Electrode de protection pour detecteur monolithique de rayonnement
CA2,541,256 2006-02-22
US11/527,707 2006-09-27
CA002561630A CA2561630A1 (fr) 2006-02-22 2006-09-29 Detecteur segmente de rayonnement avec cathode de protection laterale

Publications (1)

Publication Number Publication Date
CA2561630A1 true CA2561630A1 (fr) 2007-08-22

Family

ID=38433831

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002561630A Abandoned CA2561630A1 (fr) 2006-02-22 2006-09-29 Detecteur segmente de rayonnement avec cathode de protection laterale

Country Status (1)

Country Link
CA (1) CA2561630A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2762924A3 (fr) * 2013-01-31 2017-10-04 Nuctech Company Limited Détecteurs de rayonnement
CN112436062A (zh) * 2020-12-01 2021-03-02 上海大学 用于碲锌镉辐射探测器的复合电极及其制备方法
CN114447146A (zh) * 2021-12-27 2022-05-06 江苏赛诺格兰医疗科技有限公司 一种sipm探测器的返修方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2762924A3 (fr) * 2013-01-31 2017-10-04 Nuctech Company Limited Détecteurs de rayonnement
CN112436062A (zh) * 2020-12-01 2021-03-02 上海大学 用于碲锌镉辐射探测器的复合电极及其制备方法
CN114447146A (zh) * 2021-12-27 2022-05-06 江苏赛诺格兰医疗科技有限公司 一种sipm探测器的返修方法
CN114447146B (zh) * 2021-12-27 2023-05-26 江苏赛诺格兰医疗科技有限公司 一种sipm探测器的返修方法

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Legal Events

Date Code Title Description
EEER Examination request
FZDE Dead

Effective date: 20140930