CA2401025A1 - Cellule memoire a forte densite amelioree - Google Patents
Cellule memoire a forte densite amelioree Download PDFInfo
- Publication number
- CA2401025A1 CA2401025A1 CA002401025A CA2401025A CA2401025A1 CA 2401025 A1 CA2401025 A1 CA 2401025A1 CA 002401025 A CA002401025 A CA 002401025A CA 2401025 A CA2401025 A CA 2401025A CA 2401025 A1 CA2401025 A1 CA 2401025A1
- Authority
- CA
- Canada
- Prior art keywords
- transistor
- node
- memory cell
- cell
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000015654 memory Effects 0.000 title claims abstract description 76
- 230000008878 coupling Effects 0.000 claims abstract description 12
- 238000010168 coupling process Methods 0.000 claims abstract description 12
- 238000005859 coupling reaction Methods 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 17
- 230000003068 static effect Effects 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 5
- 230000004044 response Effects 0.000 claims description 4
- 230000014759 maintenance of location Effects 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 13
- 230000006870 function Effects 0.000 description 11
- 208000013641 Cerebrofacial arteriovenous metameric syndrome Diseases 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 230000006855 networking Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000010845 search algorithm Methods 0.000 description 2
- FBOUIAKEJMZPQG-AWNIVKPZSA-N (1E)-1-(2,4-dichlorophenyl)-4,4-dimethyl-2-(1,2,4-triazol-1-yl)pent-1-en-3-ol Chemical compound C1=NC=NN1/C(C(O)C(C)(C)C)=C/C1=CC=C(Cl)C=C1Cl FBOUIAKEJMZPQG-AWNIVKPZSA-N 0.000 description 1
- FZKWRPSUNUOXKJ-CVHRZJFOSA-N (4s,4ar,5s,5ar,6r,12ar)-4-(dimethylamino)-1,5,10,11,12a-pentahydroxy-6-methyl-3,12-dioxo-4a,5,5a,6-tetrahydro-4h-tetracene-2-carboxamide;hydrate Chemical compound O.C1=CC=C2[C@H](C)[C@@H]([C@H](O)[C@@H]3[C@](C(O)=C(C(N)=O)C(=O)[C@H]3N(C)C)(O)C3=O)C3=C(O)C2=C1O FZKWRPSUNUOXKJ-CVHRZJFOSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- CVSVTCORWBXHQV-UHFFFAOYSA-N creatine Chemical compound NC(=[NH2+])N(C)CC([O-])=O CVSVTCORWBXHQV-UHFFFAOYSA-N 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 235000011073 invertase Nutrition 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Abstract
L'invention porte sur une cellule mémoire comportant: un étage d'inversion; un transistor d'accès monté entre une ligne de données et une entrée de l'étage d'inversion, ledit transistor réagissant à un signal de commande reliant sélectivement la ligne de données à l'entrée de l'étage d'inversion; un transistor d'asservissement relié à l'entrée de l'étage d'inversion réagissant à un signal de sortie de l'étage d'inversion et verrouillant l'étage d'inversion dans un premier état logique, la cellule étant maintenue dans un deuxième état logique par un courant de fuite traversant le transistor d'accès, plus intense que celui traversant le transistor d'asservissement.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA002401025A CA2401025A1 (fr) | 2000-03-03 | 2001-03-05 | Cellule memoire a forte densite amelioree |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA2,299,991 | 2000-03-03 | ||
| CA002299991A CA2299991A1 (fr) | 2000-03-03 | 2000-03-03 | Cellule memoire pour memoire imbriquee |
| PCT/CA2001/000273 WO2001065565A1 (fr) | 2000-03-03 | 2001-03-05 | Cellule memoire a forte densite amelioree |
| CA002401025A CA2401025A1 (fr) | 2000-03-03 | 2001-03-05 | Cellule memoire a forte densite amelioree |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2401025A1 true CA2401025A1 (fr) | 2001-09-07 |
Family
ID=25681596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002401025A Abandoned CA2401025A1 (fr) | 2000-03-03 | 2001-03-05 | Cellule memoire a forte densite amelioree |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA2401025A1 (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113851176A (zh) * | 2021-09-29 | 2021-12-28 | 上海华虹宏力半导体制造有限公司 | 抗软错误的sram |
| WO2022237039A1 (fr) * | 2021-05-13 | 2022-11-17 | 上海科技大学 | Cellule sram appropriée pour un adressage de contenu à grande vitesse et un calcul logique booléen en mémoire |
-
2001
- 2001-03-05 CA CA002401025A patent/CA2401025A1/fr not_active Abandoned
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022237039A1 (fr) * | 2021-05-13 | 2022-11-17 | 上海科技大学 | Cellule sram appropriée pour un adressage de contenu à grande vitesse et un calcul logique booléen en mémoire |
| CN113851176A (zh) * | 2021-09-29 | 2021-12-28 | 上海华虹宏力半导体制造有限公司 | 抗软错误的sram |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued | ||
| FZDE | Discontinued |
Effective date: 20050307 |
|
| FZDE | Discontinued |
Effective date: 20050307 |