CA2374794A1 - Divided-voltage fet power amplifiers - Google Patents

Divided-voltage fet power amplifiers Download PDF

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Publication number
CA2374794A1
CA2374794A1 CA 2374794 CA2374794A CA2374794A1 CA 2374794 A1 CA2374794 A1 CA 2374794A1 CA 2374794 CA2374794 CA 2374794 CA 2374794 A CA2374794 A CA 2374794A CA 2374794 A1 CA2374794 A1 CA 2374794A1
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CA
Canada
Prior art keywords
outputs
esrs
resonant frequencies
divided
series
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA 2374794
Other languages
French (fr)
Other versions
CA2374794C (en
Inventor
Barry Arthur Lautzenhiser
Lloyd Lynn Lautzenhiser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Emhiser Res Inc
Original Assignee
Emhiser Research Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/028,844 external-priority patent/US6683499B2/en
Application filed by Emhiser Research Ltd filed Critical Emhiser Research Ltd
Priority to CA 2420710 priority Critical patent/CA2420710C/en
Publication of CA2374794A1 publication Critical patent/CA2374794A1/en
Application granted granted Critical
Publication of CA2374794C publication Critical patent/CA2374794C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

Divided-voltage FET amplifiers (10, 20, 30, 40, 50, 60, 70, 80, 90, 100, 110, 130, 140, 150, 160, 170, 180, 200, or 220) include two or more solid-state current devices, preferably gallium arsenide FETs, (Q1, Q2, Q4, Q5 and/or Q6), connected in series or series-parallel for do operation, and connected in parallel for rf operation, thereby improving power efficiency by using the same current two or more times to develop rf power. Various ones of the embodiments produce separate rf outputs, separately amplify two rf outputs and subsequently combine them into a single rf output, and/or selectively phase shift rf outputs. Isolation between rf frequencies and do voltages includes using decoupling capacitors with selected resonant frequencies and low effective series resistances (ESRs) and using inductors with selected self-resonant frequencies for rf chokes. Preferably, providing low ESRs includes paralleling two or more decoupling capacitors (Ca-n) with low ESRs, whose resonant frequencies can be distributed for wide-band operation.
CA 2374794 2001-12-20 2002-03-06 Divided-voltage fet power amplifiers Expired - Fee Related CA2374794C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA 2420710 CA2420710C (en) 2002-03-04 2003-03-03 Power-shifting rf amplifiers

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/028,844 2001-12-20
US10/028,844 US6683499B2 (en) 2000-12-27 2001-12-20 Divided-voltage fet power amplifiers

Publications (2)

Publication Number Publication Date
CA2374794A1 true CA2374794A1 (en) 2003-06-20
CA2374794C CA2374794C (en) 2005-05-17

Family

ID=21845776

Family Applications (1)

Application Number Title Priority Date Filing Date
CA 2374794 Expired - Fee Related CA2374794C (en) 2001-12-20 2002-03-06 Divided-voltage fet power amplifiers

Country Status (1)

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CA (1) CA2374794C (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8179196B2 (en) 2009-05-28 2012-05-15 Analog Devices, Inc. High voltage amplification using low breakdown voltage devices
US8324966B2 (en) 2011-03-28 2012-12-04 Analog Devices, Inc. Apparatus and methods for electronic amplification
US8571511B2 (en) 2011-06-10 2013-10-29 Analog Devices, Inc. Apparatus and method for a wideband RF mixer
US8594583B2 (en) 2010-12-09 2013-11-26 Analog Devices, Inc. Apparatus and method for radio frequency reception with temperature and frequency independent gain

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8179196B2 (en) 2009-05-28 2012-05-15 Analog Devices, Inc. High voltage amplification using low breakdown voltage devices
US8594583B2 (en) 2010-12-09 2013-11-26 Analog Devices, Inc. Apparatus and method for radio frequency reception with temperature and frequency independent gain
US8324966B2 (en) 2011-03-28 2012-12-04 Analog Devices, Inc. Apparatus and methods for electronic amplification
US8571511B2 (en) 2011-06-10 2013-10-29 Analog Devices, Inc. Apparatus and method for a wideband RF mixer

Also Published As

Publication number Publication date
CA2374794C (en) 2005-05-17

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