CA2324808C - Semiconductor laser module - Google Patents
Semiconductor laser module Download PDFInfo
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- CA2324808C CA2324808C CA002324808A CA2324808A CA2324808C CA 2324808 C CA2324808 C CA 2324808C CA 002324808 A CA002324808 A CA 002324808A CA 2324808 A CA2324808 A CA 2324808A CA 2324808 C CA2324808 C CA 2324808C
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- semiconductor laser
- optical fiber
- laser diode
- lens
- fixed
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4206—Optical features
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4236—Fixing or mounting methods of the aligned elements
- G02B6/424—Mounting of the optical light guide
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4251—Sealed packages
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
- G02B6/4203—Optical features
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4248—Feed-through connections for the hermetical passage of fibres through a package wall
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4266—Thermal aspects, temperature control or temperature monitoring
- G02B6/4268—Cooling
- G02B6/4269—Cooling with heat sinks or radiation fins
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4266—Thermal aspects, temperature control or temperature monitoring
- G02B6/4268—Cooling
- G02B6/4271—Cooling with thermo electric cooling
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4286—Optical modules with optical power monitoring
Abstract
A semiconductor laser diode is mounted on a heat sink and fixed to a carrier by soldering. The carrier is fixed to a cooling substrate of a Peltier cooler for controlling temperature of the semiconductor laser diode in order to stabilize a power level and a lasing wavelength of an optical signal. The Peltier cooler is fixed to an internal bottom surface of a module package. A photodiode for monitoring outputted light power of the semiconductor laser diode and a lens for focusing a light emitted therefrom are mounted on the carrier.
The optical fiber with an end portion which tapers off to a point is adjusted so as to be optically coupled with the lens with a high efficiency, and fixed to the carrier via an optical fiber holder.
A clearance between the module package and the optical fiber is filled with solder with a low meting point.
The optical fiber with an end portion which tapers off to a point is adjusted so as to be optically coupled with the lens with a high efficiency, and fixed to the carrier via an optical fiber holder.
A clearance between the module package and the optical fiber is filled with solder with a low meting point.
Description
SEMICONDUCTOR LASER MODULE
FIELD OF THE INVENTION
This invention relates to a semiconductor laser module, and especially to a semiconductor laser module of 980 nm band.
BACKGROUND OF THE INVENTION
A radiation pattern of a semiconductor laser diode of 980 nm band is elliptic, a half-width angle thereof in the vertical plane is 20' to 40' , and that in the horizontal plane is 5~ to 15~ .
When the semiconductor laser diode of the 980 nm band is optically coupled with an optical fiber, a mode field diameter of which is almost circular, a coupling loss therebetween becomes excessively large.
In an attempt to overcome the aforementioned difficulty, an experiment that a laser beam emitted from the semiconductor laser diode of the 980 nmband is focused bya cylindrical lens is conducted.
In this experiment, the laser beam is focused only in the vertical plane with intent to make the shape of the radiation pattern of the laser beam be nearly circular. However, since the laser beam is not focused in the horizontal plane, a coupling efficiency between the semiconductor laser diode and the optical fiber cannot be improved .
Although the use of a beam-shaping lens or an optical fiber with an elliptic cross-section has been proposed as another method for solving the aforementioned difficulty, there is a problem that a structure becomes complicated or the optical fiber is hard to be processed.
FIELD OF THE INVENTION
This invention relates to a semiconductor laser module, and especially to a semiconductor laser module of 980 nm band.
BACKGROUND OF THE INVENTION
A radiation pattern of a semiconductor laser diode of 980 nm band is elliptic, a half-width angle thereof in the vertical plane is 20' to 40' , and that in the horizontal plane is 5~ to 15~ .
When the semiconductor laser diode of the 980 nm band is optically coupled with an optical fiber, a mode field diameter of which is almost circular, a coupling loss therebetween becomes excessively large.
In an attempt to overcome the aforementioned difficulty, an experiment that a laser beam emitted from the semiconductor laser diode of the 980 nmband is focused bya cylindrical lens is conducted.
In this experiment, the laser beam is focused only in the vertical plane with intent to make the shape of the radiation pattern of the laser beam be nearly circular. However, since the laser beam is not focused in the horizontal plane, a coupling efficiency between the semiconductor laser diode and the optical fiber cannot be improved .
Although the use of a beam-shaping lens or an optical fiber with an elliptic cross-section has been proposed as another method for solving the aforementioned difficulty, there is a problem that a structure becomes complicated or the optical fiber is hard to be processed.
As a devise for solving the aforementioned problems and improving the coupling efficiency between the semiconductor laser diode and the optical fiber, there is a method that the optical fiber is so processed that an input end portion thereof tapers off to a point.
S According to this method, the end portion of the optical fiber is easilyprocessed by polishing. Moreover, since the optical fiber closely approaches the semiconductor laser, it is out of the question that the laser beam is not focused in the vertical plane.
As shown in FIG.1, in the aforementioned semiconductor module, the semiconductor laser diode 1 is mounted on a heat sink 11 and fixed to a carrier 7 by soldering.
The carrier 7 is fixed to the cooling substrate of a Peltier cooler 10 which controls temperature of the semiconductor laser diode 1 in order to stabilized a power level and a lasing wavelength of an optical signal. The Peltier cooler 10 is fixed to an internal bottom surface of a module package 4.
A photodiode ( a PD, hereinafter ) 8 for monitoring outputted light power of the semiconductor laser diode 1 is mounted on the carrier 7. The optical fiber 2 is fixed to the carrier 7 via an optical fiber-holder 22 so that a tapered end portion 21 of the optical fiber 2 approaches the semiconductor laser diode 1 closely.
A clearance between the module package 4 and the optical fiber 2 is filled with solder with a low melting point in order to airtightly seal the semiconductor laser diode 1.
As shown in FIG . 2 , an optical conf iguration of the conventional semiconductor module is composed of the semiconductor laser diode 1 and the tapered end portion 21 of the optical fiber 2 only. In FIG.2, the light emitted from the semiconductor laser diode 1 is concentrated on the optical fiber 2, and taken out through the optical fiber 2 and transmitted towards the outside. In this case, an interval between the semiconductor laser diode 1 and the optical fiber 2 is L2 under the optimum condition of the optical coupling.
However, in the aforementioned structure, since the interval between the optical fiber 2 and the semiconductor laser diode 1 under the optimum condition of the optical coupling is several tens ,(.lm, it may well be that the optical fiber 2 will collide with the semiconductor laser diode 1 and be damaged.
SUMMARY OF THE INVENTION
Accordingly, it is an object of the invention to solve the aforementioned problems, make a semiconductor laser diode become hard to be damaged, and provide a semiconductor laser module with a high coupling efficiency.
According to a feature of the invention, a semiconductor laser module comprises:
an optical fiber with an input end portion which tapers off to a point, a semiconductor laser diode which is optically coupled with the optical fiber, and a lens which is situated between the semiconductor laser diode and the optical fiber so that spacings with predetermined widths are respectively inserted between the semiconductor laser diode and the lens and between the lens and the optical fiber.
S According to this method, the end portion of the optical fiber is easilyprocessed by polishing. Moreover, since the optical fiber closely approaches the semiconductor laser, it is out of the question that the laser beam is not focused in the vertical plane.
As shown in FIG.1, in the aforementioned semiconductor module, the semiconductor laser diode 1 is mounted on a heat sink 11 and fixed to a carrier 7 by soldering.
The carrier 7 is fixed to the cooling substrate of a Peltier cooler 10 which controls temperature of the semiconductor laser diode 1 in order to stabilized a power level and a lasing wavelength of an optical signal. The Peltier cooler 10 is fixed to an internal bottom surface of a module package 4.
A photodiode ( a PD, hereinafter ) 8 for monitoring outputted light power of the semiconductor laser diode 1 is mounted on the carrier 7. The optical fiber 2 is fixed to the carrier 7 via an optical fiber-holder 22 so that a tapered end portion 21 of the optical fiber 2 approaches the semiconductor laser diode 1 closely.
A clearance between the module package 4 and the optical fiber 2 is filled with solder with a low melting point in order to airtightly seal the semiconductor laser diode 1.
As shown in FIG . 2 , an optical conf iguration of the conventional semiconductor module is composed of the semiconductor laser diode 1 and the tapered end portion 21 of the optical fiber 2 only. In FIG.2, the light emitted from the semiconductor laser diode 1 is concentrated on the optical fiber 2, and taken out through the optical fiber 2 and transmitted towards the outside. In this case, an interval between the semiconductor laser diode 1 and the optical fiber 2 is L2 under the optimum condition of the optical coupling.
However, in the aforementioned structure, since the interval between the optical fiber 2 and the semiconductor laser diode 1 under the optimum condition of the optical coupling is several tens ,(.lm, it may well be that the optical fiber 2 will collide with the semiconductor laser diode 1 and be damaged.
SUMMARY OF THE INVENTION
Accordingly, it is an object of the invention to solve the aforementioned problems, make a semiconductor laser diode become hard to be damaged, and provide a semiconductor laser module with a high coupling efficiency.
According to a feature of the invention, a semiconductor laser module comprises:
an optical fiber with an input end portion which tapers off to a point, a semiconductor laser diode which is optically coupled with the optical fiber, and a lens which is situated between the semiconductor laser diode and the optical fiber so that spacings with predetermined widths are respectively inserted between the semiconductor laser diode and the lens and between the lens and the optical fiber.
That is to say, in the semiconductor laser module according to the invention, the semiconductor laser diode and the optical fiber become hard to be damaged and a high coupling efficiency therebetween can be obtained by using the lens and the optical fiber with the input end portion which tapers off to a point. It should be noted that a similar effect can be obtained in case that the lens is replaced with a lens system composed of plural lenses arranged along a common optical axis.
Explaining concretely, the semiconductor laser module according to the invention is composed of the semiconductor laser diode of 980 nm band, the optical fiber with the input end portion which tapers off to a point and the lens which focuses a light emitted from the semiconductor laser diode and has magnification of about one.
The light emitted form the semiconductor laser diode is focused on the optical fiber, and the optical fiber is optically coupled with the semiconductor laser diode. Although the interval between the optical fiber and the semiconductor laser diode is several tens /.1m when there is not the lens, in the semiconductor laser module comprising the lens, the interval between the semiconductor laser diode and the lens and that between the lens and the optical fiber can be increased noticeably.
In the semiconductor laser module of the 980 nm band with the aforementioned structure, the semiconductor laser and the optical fiber are prevented from being damaged at the time of adjustment, and the coupling efficiency therebetween can be improved.
-$-BRIEF DESCRIPTION OF THE DRAWINGS
The invention will be explained in more detail in conjunction of the appended drawings, wherein:
FIG.1 shows a structure of a conventional semiconductor laser module, FIG.2 shows an optical configuration of a conventional semiconductor laser module, FIG. 3 shows a structure of a semiconductor lasermodule according to the first preferred embodiment of the invention, FIG.4 shows an optical configuration of a semiconductor laser module according to the first preferred embodiment of the invention, and FIG. 5 shows a structure of a semiconductor lasermodule according to the second preferred embodiment of the invention.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
Next, the first preferred embodiment of the invention will be explained referring to the appended drawings. FIG.3 shows a semiconductor module according to the first preferred embodiment of the invention. In FIG.3, a semiconductor laser diode 1 is mounted on a heat sink 11, which is fixed to a carrier 7 by soldering.
The carrier 7 is fixed to a cooling substrate of a Peltier cooler 10 for controlling temperature of the semiconductor laser diode 1 by soldering in order to stabilize a power level and a lasing wavelength of an optical signal. The Peltier cooler 10 is fixed to an interval bottom surface of a module package 4 by soldering.
A PD 8 for monitoring outputted power of the semiconductor laser diode 1 and a lens 3 for focusing the light emitted therefrom are mounted on the carrier 7. Magnification of the lens 3 or a lens system composed of plural lenses is about one. That is to say, the lens 3 is situated between the semiconductor laser diode 1 and the optical fiber 2 so that spacings with predetermined widths are respectively inserted between the semiconductor laser diode 1 and the lens 3 and between the lens 3 and the optical fiber 2 in order to sufficiently separate the semiconductor laser diode 1 and the optical fiber 2 from each other.
A position and an attitude of the optical fiber 2 with a tapered end portion 21 is so adjusted that the optical fiber 2 is optically coupled with the lens 3 under the optimum condition. The optical fiber 2 is fixed to the carrier 7 via an optical fiber-holder 22.
A clearance between the module package 4 and the optical fiber 2 is filled with solder with a low melting point in order to airtightly seal the semiconductor laser diode 1.
FIG.4 shows an optical configuration of the semiconductor laser module according to the first preferred embodiment of the invention.
As shown in Fig. 4, the light emitted from the semiconductor laser diode 1 is concentrated by the lens 3 which is situated near the semiconductor laser diode 1 at a certain interval of L1, and focused on a certain point which is situated near the lens 3 at the same interval of L1.
Since magnification of the lens 3 or the lens system is almost one, the aforementioned focal point can be regarded a light-emitting point of the semiconductor laser diode 1. Moreover, since light power is focused on the optical fiber 2, light power can be taken _7_ out through the optical fiber 2 and transmitted towards the outside.
In case that the optical fiber 2 is optically coupled with the lens 3 under the optimum condition, since an interval between the light emitting point (the focal point) and the optical fiber 2 is L2, a distance between the lens 3 and the optical fiber is given as L1 + L2.
As shown in Fig. 2, since the interval between the semiconductor laser diode 1 and the optical fiber 2 is L2 when the optical fiber 2 is optically coupled with the semiconductor laser diode 1 under the optimum condition in the conventional optical configuration, in the first preferred embodiment of the invention, the interval between the optical fiber 2 and the lens 3 become larger than that between the optical fiber 2 and the semiconductor laser diode 1 in the conventionalopticalconfiguration by L1. Accordingly, there is hardly a possibility that the semiconductor laser diode 1 and the optical fiber 2 may be damaged at the time of adjustment, and the semiconductor module with a high coupling efficiency can be provided.
As mentioned in the above, the semiconductor laser diode 1 and the optical f fiber 2 can be prevented form being damaged by inserting the lens 3 between the semiconductor laser diode 1 and the optical fiber 2 so that the semiconductor laser diode 1 and the optical fiber 2 are remote from each other.
Although the semiconductor laser diode 1 closely approaches the optical fiber 2 and the interval therebetween is several um to several tens um in case that there is not the lens 3, it can be increased by a factor of several tens by inserting the lens 3 _g_ between the semiconductor laser diode 1 and the optical fiber 2.
Moreover, the optical fiber 2 never collides with the semiconductor laser diode 1, because the lens 3 is situated in front of the semiconductor laser diode 1.
Fig. 5 shows a semiconductor laser module according to the second preferred embodiment of the invention. As shown in Fig.
Explaining concretely, the semiconductor laser module according to the invention is composed of the semiconductor laser diode of 980 nm band, the optical fiber with the input end portion which tapers off to a point and the lens which focuses a light emitted from the semiconductor laser diode and has magnification of about one.
The light emitted form the semiconductor laser diode is focused on the optical fiber, and the optical fiber is optically coupled with the semiconductor laser diode. Although the interval between the optical fiber and the semiconductor laser diode is several tens /.1m when there is not the lens, in the semiconductor laser module comprising the lens, the interval between the semiconductor laser diode and the lens and that between the lens and the optical fiber can be increased noticeably.
In the semiconductor laser module of the 980 nm band with the aforementioned structure, the semiconductor laser and the optical fiber are prevented from being damaged at the time of adjustment, and the coupling efficiency therebetween can be improved.
-$-BRIEF DESCRIPTION OF THE DRAWINGS
The invention will be explained in more detail in conjunction of the appended drawings, wherein:
FIG.1 shows a structure of a conventional semiconductor laser module, FIG.2 shows an optical configuration of a conventional semiconductor laser module, FIG. 3 shows a structure of a semiconductor lasermodule according to the first preferred embodiment of the invention, FIG.4 shows an optical configuration of a semiconductor laser module according to the first preferred embodiment of the invention, and FIG. 5 shows a structure of a semiconductor lasermodule according to the second preferred embodiment of the invention.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
Next, the first preferred embodiment of the invention will be explained referring to the appended drawings. FIG.3 shows a semiconductor module according to the first preferred embodiment of the invention. In FIG.3, a semiconductor laser diode 1 is mounted on a heat sink 11, which is fixed to a carrier 7 by soldering.
The carrier 7 is fixed to a cooling substrate of a Peltier cooler 10 for controlling temperature of the semiconductor laser diode 1 by soldering in order to stabilize a power level and a lasing wavelength of an optical signal. The Peltier cooler 10 is fixed to an interval bottom surface of a module package 4 by soldering.
A PD 8 for monitoring outputted power of the semiconductor laser diode 1 and a lens 3 for focusing the light emitted therefrom are mounted on the carrier 7. Magnification of the lens 3 or a lens system composed of plural lenses is about one. That is to say, the lens 3 is situated between the semiconductor laser diode 1 and the optical fiber 2 so that spacings with predetermined widths are respectively inserted between the semiconductor laser diode 1 and the lens 3 and between the lens 3 and the optical fiber 2 in order to sufficiently separate the semiconductor laser diode 1 and the optical fiber 2 from each other.
A position and an attitude of the optical fiber 2 with a tapered end portion 21 is so adjusted that the optical fiber 2 is optically coupled with the lens 3 under the optimum condition. The optical fiber 2 is fixed to the carrier 7 via an optical fiber-holder 22.
A clearance between the module package 4 and the optical fiber 2 is filled with solder with a low melting point in order to airtightly seal the semiconductor laser diode 1.
FIG.4 shows an optical configuration of the semiconductor laser module according to the first preferred embodiment of the invention.
As shown in Fig. 4, the light emitted from the semiconductor laser diode 1 is concentrated by the lens 3 which is situated near the semiconductor laser diode 1 at a certain interval of L1, and focused on a certain point which is situated near the lens 3 at the same interval of L1.
Since magnification of the lens 3 or the lens system is almost one, the aforementioned focal point can be regarded a light-emitting point of the semiconductor laser diode 1. Moreover, since light power is focused on the optical fiber 2, light power can be taken _7_ out through the optical fiber 2 and transmitted towards the outside.
In case that the optical fiber 2 is optically coupled with the lens 3 under the optimum condition, since an interval between the light emitting point (the focal point) and the optical fiber 2 is L2, a distance between the lens 3 and the optical fiber is given as L1 + L2.
As shown in Fig. 2, since the interval between the semiconductor laser diode 1 and the optical fiber 2 is L2 when the optical fiber 2 is optically coupled with the semiconductor laser diode 1 under the optimum condition in the conventional optical configuration, in the first preferred embodiment of the invention, the interval between the optical fiber 2 and the lens 3 become larger than that between the optical fiber 2 and the semiconductor laser diode 1 in the conventionalopticalconfiguration by L1. Accordingly, there is hardly a possibility that the semiconductor laser diode 1 and the optical fiber 2 may be damaged at the time of adjustment, and the semiconductor module with a high coupling efficiency can be provided.
As mentioned in the above, the semiconductor laser diode 1 and the optical f fiber 2 can be prevented form being damaged by inserting the lens 3 between the semiconductor laser diode 1 and the optical fiber 2 so that the semiconductor laser diode 1 and the optical fiber 2 are remote from each other.
Although the semiconductor laser diode 1 closely approaches the optical fiber 2 and the interval therebetween is several um to several tens um in case that there is not the lens 3, it can be increased by a factor of several tens by inserting the lens 3 _g_ between the semiconductor laser diode 1 and the optical fiber 2.
Moreover, the optical fiber 2 never collides with the semiconductor laser diode 1, because the lens 3 is situated in front of the semiconductor laser diode 1.
Fig. 5 shows a semiconductor laser module according to the second preferred embodiment of the invention. As shown in Fig.
5, a semiconductor laser diode 1 fixed to a heat sink 11 and a PD
8 are mounted in the inside of a sub-package 31 which is airtightly sealed by a lens 3.
An optical fiber 2 is fixed to the sub-package 31 via an optical fiber-holder 32 by YAG-welding (welding by means of a YAG laser).
At this time, the lens 3 is inserted between the sub-package 31 and the optical fiber-holder 32.
The sub-package 31 to which the optical fiber 2 is fixed is fixed to a cooling substrate of a Peltier cooler 10 by soldering.
The Peltier cooler 10 is fixed to an internal bottom surface of a module package 4. A method for fixing the optical fiber 2 is not restricted to the aforementioned one, and the optical fiber 2 may be fixed to a carrier similarly to the first preferred embodiment when the carrier is used.
In case of the conventional semiconductor laser module in which there is not the lens 3, since the interval between the semiconductor laser diode 1 and the optical fiber 2 is narrow, the clearance between the optical fiber 2 and the module package 4 is airtightly sealed.
In this case, it is necessary to metallize the optical fiber 2 in order to perform sealing by means of soldering. According to the aforementioned method, there is a possibility that a residual stress may arise in the optical fiber 2 when it is cooled and solidified, which may deteriorate reliability of the product.
On the other hand, in the semiconductor laser module according to the second preferred embodiment of the invention, since the intervals between the semiconductor laser diode 1 and the lens 3 and between the lens 3 and the optical fiber 2 are respectively extended by inserting the lens 3 between the semiconductor laser diode 1 and the optical fiber 2. Accordingly, it becomes possible to airtightly seal the semiconductor laser diode 1 by means of the lens 3.
Although the Peltier cooler 10 is used in the first and second preferred embodiments, the Peltier cooler may be omitted if the power level and the lasing wavelength of the optical signal are both stabilized.
Although a single lens 3 is used in the embodiments shown in Figs. 3 and 5, the lens 3 may be replaced with a lens system which is composed of plural lenses, such as collimator lenses, and has magnification of almost one. When the lens system composed the plural lenses are used the first lens seals the sub-package and the remaining lenses are situated outside the sub-package. The last lens faces the input end portion of the optical fiber in the module package.
As mentioned in the above, according to the invention, in the semiconductor laser module in which the optical f fiber wi th the tapered end portion is optically coupled with the semiconductor laser diode, the semiconductor laser diode and the optical fiber become hard to be damaged by inserting the lens between the semiconductor laser diode and the optical fiber so that the spacings with the adequate widths are respectively inserted between the semiconductor laser diode and the lens and between the lens and the optical fiber.
As a result, the optical fiber is optically coupled with the semiconductor laser diode with a high coupling efficiency.
Although the invention has been described with respect to specific embodiment for complete and clear disclosure, the appended claims are not to be thus limited but are to be construed as embodying all modification and alternative constructions that may be occurred to one skilled in the art which fairly fall within the basic teaching here is set forth.
8 are mounted in the inside of a sub-package 31 which is airtightly sealed by a lens 3.
An optical fiber 2 is fixed to the sub-package 31 via an optical fiber-holder 32 by YAG-welding (welding by means of a YAG laser).
At this time, the lens 3 is inserted between the sub-package 31 and the optical fiber-holder 32.
The sub-package 31 to which the optical fiber 2 is fixed is fixed to a cooling substrate of a Peltier cooler 10 by soldering.
The Peltier cooler 10 is fixed to an internal bottom surface of a module package 4. A method for fixing the optical fiber 2 is not restricted to the aforementioned one, and the optical fiber 2 may be fixed to a carrier similarly to the first preferred embodiment when the carrier is used.
In case of the conventional semiconductor laser module in which there is not the lens 3, since the interval between the semiconductor laser diode 1 and the optical fiber 2 is narrow, the clearance between the optical fiber 2 and the module package 4 is airtightly sealed.
In this case, it is necessary to metallize the optical fiber 2 in order to perform sealing by means of soldering. According to the aforementioned method, there is a possibility that a residual stress may arise in the optical fiber 2 when it is cooled and solidified, which may deteriorate reliability of the product.
On the other hand, in the semiconductor laser module according to the second preferred embodiment of the invention, since the intervals between the semiconductor laser diode 1 and the lens 3 and between the lens 3 and the optical fiber 2 are respectively extended by inserting the lens 3 between the semiconductor laser diode 1 and the optical fiber 2. Accordingly, it becomes possible to airtightly seal the semiconductor laser diode 1 by means of the lens 3.
Although the Peltier cooler 10 is used in the first and second preferred embodiments, the Peltier cooler may be omitted if the power level and the lasing wavelength of the optical signal are both stabilized.
Although a single lens 3 is used in the embodiments shown in Figs. 3 and 5, the lens 3 may be replaced with a lens system which is composed of plural lenses, such as collimator lenses, and has magnification of almost one. When the lens system composed the plural lenses are used the first lens seals the sub-package and the remaining lenses are situated outside the sub-package. The last lens faces the input end portion of the optical fiber in the module package.
As mentioned in the above, according to the invention, in the semiconductor laser module in which the optical f fiber wi th the tapered end portion is optically coupled with the semiconductor laser diode, the semiconductor laser diode and the optical fiber become hard to be damaged by inserting the lens between the semiconductor laser diode and the optical fiber so that the spacings with the adequate widths are respectively inserted between the semiconductor laser diode and the lens and between the lens and the optical fiber.
As a result, the optical fiber is optically coupled with the semiconductor laser diode with a high coupling efficiency.
Although the invention has been described with respect to specific embodiment for complete and clear disclosure, the appended claims are not to be thus limited but are to be construed as embodying all modification and alternative constructions that may be occurred to one skilled in the art which fairly fall within the basic teaching here is set forth.
Claims (7)
1. A semiconductor laser module comprising:
an optical fiber with an input end portion which tapers off to a point, a semiconductor laser diode which is optically coupled with said optical fiber, and a lens which is situated between said semiconductor laser diode and said optical fiber so that spacings with predetermined widths are respectively inserted between said semiconductor laser diode and said lens and between said lens and said optical fiber.
an optical fiber with an input end portion which tapers off to a point, a semiconductor laser diode which is optically coupled with said optical fiber, and a lens which is situated between said semiconductor laser diode and said optical fiber so that spacings with predetermined widths are respectively inserted between said semiconductor laser diode and said lens and between said lens and said optical fiber.
2. A semiconductor laser module according to claim 1, wherein:
magnification of said lens is almost one.
magnification of said lens is almost one.
3. A semiconductor laser module according to claim 2, wherein:
said lens is situated between said semiconductor laser diode and said optical fiber so that an interval between said semiconductor laser diode and said lens and that between said lens and said optical fiber are a same as or slightly longer than a focal distance of said lens.
said lens is situated between said semiconductor laser diode and said optical fiber so that an interval between said semiconductor laser diode and said lens and that between said lens and said optical fiber are a same as or slightly longer than a focal distance of said lens.
4. A semiconductor laser module according to claim 1 further comprising a sub-package which accommodates said semiconductor laser diode and airtightly seals said semiconductor laser diode by means of said lens.
5. A semiconductor laser module according to claim 4, wherein:
an optical fiber-holder for supporting said optical fiber is fixed to said sub-package.
an optical fiber-holder for supporting said optical fiber is fixed to said sub-package.
6. A semiconductor laser diode comprising:
an optical fiber with an input end portion which tapers off to a point, a semiconductor laser diode which is optically coupled with said optical fiber, and a lens system composed of plural lenses arranged along a common optical axis, which is situated between said semiconductor laser diode and said optical fiber so that spacings with predetermined widths are respectively inserted between said semiconductor laser and a first side end of said lens system and between a second side end of said lens system and said optical fiber.
an optical fiber with an input end portion which tapers off to a point, a semiconductor laser diode which is optically coupled with said optical fiber, and a lens system composed of plural lenses arranged along a common optical axis, which is situated between said semiconductor laser diode and said optical fiber so that spacings with predetermined widths are respectively inserted between said semiconductor laser and a first side end of said lens system and between a second side end of said lens system and said optical fiber.
7. A semiconductor laser diode according to claim 6, wherein:
magnification of said lens system is almost one.
magnification of said lens system is almost one.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31316999A JP2001133664A (en) | 1999-11-04 | 1999-11-04 | Semiconductor laser module |
| JP11-313169 | 1999-11-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2324808A1 CA2324808A1 (en) | 2001-05-04 |
| CA2324808C true CA2324808C (en) | 2003-09-23 |
Family
ID=18037948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002324808A Expired - Fee Related CA2324808C (en) | 1999-11-04 | 2000-10-31 | Semiconductor laser module |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2001133664A (en) |
| CA (1) | CA2324808C (en) |
| GB (1) | GB2362475B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103576257B (en) * | 2013-10-25 | 2015-07-15 | 中国科学院半导体研究所 | Single-fiber two-way miniaturization optical transceiver sealing device |
| CN104752955B (en) * | 2015-03-31 | 2017-08-25 | 西安炬光科技有限公司 | A kind of high-power semiconductor laser light source for processing system of feedback against sunshine |
| CN112684551A (en) * | 2021-01-18 | 2021-04-20 | 深圳市迅特通信技术股份有限公司 | ROSA module for light splitting monitoring feedback control and control method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7904283A (en) * | 1979-05-31 | 1980-12-02 | Philips Nv | COUPLING ELEMENT WITH A LIGHT SOURCE AND A LENS-SHAPED ELEMENT. |
| NL8403535A (en) * | 1984-11-21 | 1986-06-16 | Philips Nv | DEVICE FOR OPTICALLY COUPLING A RADIANT SOURCE TO AN OPTICAL TRANSMISSION FIBER. |
| JPH1096839A (en) * | 1996-09-20 | 1998-04-14 | Sumitomo Electric Ind Ltd | Production of semiconductor laser module |
-
1999
- 1999-11-04 JP JP31316999A patent/JP2001133664A/en active Pending
-
2000
- 2000-10-31 CA CA002324808A patent/CA2324808C/en not_active Expired - Fee Related
- 2000-11-03 GB GB0026925A patent/GB2362475B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| GB2362475A (en) | 2001-11-21 |
| JP2001133664A (en) | 2001-05-18 |
| CA2324808A1 (en) | 2001-05-04 |
| GB2362475B (en) | 2002-05-22 |
| GB0026925D0 (en) | 2000-12-20 |
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