CA2175044A1 - Materiau pour memoire et procede de fabrication - Google Patents
Materiau pour memoire et procede de fabricationInfo
- Publication number
- CA2175044A1 CA2175044A1 CA002175044A CA2175044A CA2175044A1 CA 2175044 A1 CA2175044 A1 CA 2175044A1 CA 002175044 A CA002175044 A CA 002175044A CA 2175044 A CA2175044 A CA 2175044A CA 2175044 A1 CA2175044 A1 CA 2175044A1
- Authority
- CA
- Canada
- Prior art keywords
- materials
- composition
- layer
- value
- data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000463 material Substances 0.000 title claims abstract description 131
- 238000000034 method Methods 0.000 title claims description 81
- 230000015654 memory Effects 0.000 title claims description 65
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000203 mixture Substances 0.000 claims abstract description 100
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 24
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 15
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 13
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 46
- 210000004027 cell Anatomy 0.000 claims description 27
- 229910052742 iron Inorganic materials 0.000 claims description 25
- 229910052745 lead Inorganic materials 0.000 claims description 24
- 229910052793 cadmium Inorganic materials 0.000 claims description 23
- 230000008859 change Effects 0.000 claims description 21
- 229910052804 chromium Inorganic materials 0.000 claims description 21
- 229910052725 zinc Inorganic materials 0.000 claims description 21
- 210000000352 storage cell Anatomy 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 17
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 16
- 230000001360 synchronised effect Effects 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 13
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 11
- 229910052714 tellurium Inorganic materials 0.000 claims description 11
- 229910052716 thallium Inorganic materials 0.000 claims description 8
- 229920006395 saturated elastomer Polymers 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims 4
- 229910052711 selenium Inorganic materials 0.000 claims 4
- 239000004020 conductor Substances 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 1
- 230000005291 magnetic effect Effects 0.000 description 121
- 230000006698 induction Effects 0.000 description 28
- 238000003860 storage Methods 0.000 description 21
- 235000012431 wafers Nutrition 0.000 description 18
- 230000008021 deposition Effects 0.000 description 15
- 239000011593 sulfur Substances 0.000 description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 10
- 230000005415 magnetization Effects 0.000 description 9
- 239000000843 powder Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 229910000604 Ferrochrome Inorganic materials 0.000 description 3
- 230000001066 destructive effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 101150034533 ATIC gene Proteins 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 101150007148 THI5 gene Proteins 0.000 description 1
- 229910004273 TeO3 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/672—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers having different compositions in a plurality of magnetic layers, e.g. layer compositions having differing elemental components or differing proportions of elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
Abstract
On décrit une composition de matériaux à propriétés ferromagnétiques et piézoélectriques. Dans la variante préférée, cette composition comprend une première couche (100) de Pb¿(1-x-y)?Cd¿x?Fe¿y? et une deuxième couche (110) de Cr¿(1-z-w)?Zn¿z?Te¿w?, où x, y, z et w sont des valeurs telles que 0,38 < x < 0,042, 0,08 < y < 0,094, 0,38 < z < 0,41, 0,28 < w < 0,31 et 0,25 < (1-z-w) < 0,32. De plus, chaque couche (100, 110) contient les éléments Bi, O et S.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA002175044A CA2175044A1 (fr) | 1993-10-29 | 1993-10-29 | Materiau pour memoire et procede de fabrication |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA002175044A CA2175044A1 (fr) | 1993-10-29 | 1993-10-29 | Materiau pour memoire et procede de fabrication |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2175044A1 true CA2175044A1 (fr) | 1995-05-04 |
Family
ID=4158068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002175044A Abandoned CA2175044A1 (fr) | 1993-10-29 | 1993-10-29 | Materiau pour memoire et procede de fabrication |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA2175044A1 (fr) |
-
1993
- 1993-10-29 CA CA002175044A patent/CA2175044A1/fr not_active Abandoned
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| FZDE | Discontinued | ||
| FZDE | Discontinued |
Effective date: 20060620 |