CA2084858A1 - Process for optically storing information - Google Patents
Process for optically storing informationInfo
- Publication number
- CA2084858A1 CA2084858A1 CA002084858A CA2084858A CA2084858A1 CA 2084858 A1 CA2084858 A1 CA 2084858A1 CA 002084858 A CA002084858 A CA 002084858A CA 2084858 A CA2084858 A CA 2084858A CA 2084858 A1 CA2084858 A1 CA 2084858A1
- Authority
- CA
- Canada
- Prior art keywords
- layer
- process according
- recording
- substrate
- c6alkyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title claims abstract description 59
- 239000000463 material Substances 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 150000007857 hydrazones Chemical class 0.000 claims abstract description 33
- 238000010521 absorption reaction Methods 0.000 claims abstract description 11
- 230000005540 biological transmission Effects 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 131
- 239000011241 protective layer Substances 0.000 claims description 20
- -1 diphenylamino, dibenzylamino, phenylbenzylamino Chemical group 0.000 claims description 19
- 239000004033 plastic Substances 0.000 claims description 11
- 229920003023 plastic Polymers 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000002310 reflectometry Methods 0.000 claims description 9
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 8
- 239000006104 solid solution Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 239000008240 homogeneous mixture Substances 0.000 claims description 7
- 150000002739 metals Chemical class 0.000 claims description 7
- 239000011230 binding agent Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 6
- 229920000515 polycarbonate Polymers 0.000 claims description 6
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 6
- 229920001187 thermosetting polymer Polymers 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 4
- 125000001624 naphthyl group Chemical group 0.000 claims description 4
- 229920000058 polyacrylate Polymers 0.000 claims description 4
- 239000004417 polycarbonate Substances 0.000 claims description 4
- 229920000728 polyester Polymers 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims description 3
- 239000012815 thermoplastic material Substances 0.000 claims description 3
- 239000002033 PVDF binder Substances 0.000 claims description 2
- 239000004952 Polyamide Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 229920002647 polyamide Polymers 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 229920000193 polymethacrylate Polymers 0.000 claims description 2
- 229920000098 polyolefin Polymers 0.000 claims description 2
- 229920002635 polyurethane Polymers 0.000 claims description 2
- 239000004814 polyurethane Substances 0.000 claims description 2
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 2
- 239000004800 polyvinyl chloride Substances 0.000 claims description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 2
- 229920001169 thermoplastic Polymers 0.000 claims description 2
- 239000004416 thermosoftening plastic Substances 0.000 claims description 2
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims 10
- 125000002490 anilino group Chemical group [H]N(*)C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 claims 2
- 125000000440 benzylamino group Chemical group [H]N(*)C([H])([H])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 claims 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N Carbazole Natural products C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 claims 1
- 125000005428 anthryl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C(*)=C([H])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 claims 1
- 125000002541 furyl group Chemical group 0.000 claims 1
- 229920001519 homopolymer Polymers 0.000 claims 1
- 229910052500 inorganic mineral Inorganic materials 0.000 claims 1
- 239000011707 mineral Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 125000004076 pyridyl group Chemical group 0.000 claims 1
- 239000008247 solid mixture Substances 0.000 claims 1
- 125000005504 styryl group Chemical group 0.000 claims 1
- 125000001544 thienyl group Chemical group 0.000 claims 1
- 238000000151 deposition Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- ZYVYEJXMYBUCMN-UHFFFAOYSA-N 1-methoxy-2-methylpropane Chemical compound COCC(C)C ZYVYEJXMYBUCMN-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 241000243251 Hydra Species 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 150000004984 aromatic diamines Chemical class 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 238000009750 centrifugal casting Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 2
- 150000002009 diols Chemical class 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 2
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000003506 n-propoxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 2
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004425 Makrolon Substances 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000003707 hexyloxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 125000002510 isobutoxy group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])O* 0.000 description 1
- 238000006317 isomerization reaction Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000006606 n-butoxy group Chemical group 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000004072 triols Chemical class 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/244—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Process for optically storing information Abstract of the Disclosure A process for optically recording information on a recording material comprising a substrate coated with a layer of a dithioquinacridone, between which substrate and the dithioquinacridone layer or on said layer there may be provided a further layer of an organic hydrazone, or the dithioquinacridone layer is mixed with a hydrazone. The information is recorded by iradiation with laser light in the NIR range and can be read out once or repeatedly by measuring the shift in the absorption by the transmission or refection method. The system is an information carrier of WORM type.
Description
FM16-18881tA
Process for o~ticallY storing information The present invention relates to a process for optically recording and storing information in the form of bits by irradiating a recording material comprising a subshate coated with at least one layer of a dithioquinacridone as reco~ding material, which recording material may be coated with a reflective layer or a reflective layer ma~ be provided between ~e substrate and the dithioquinacriclone layer~ and an additional layer containing an organic hydrazone may be provided between dle substrate or between the reflective layers and the dithioquinacridone layer, or the dithioquinacridone layer may be mixed with a hydrazone, and the topmost layer may be coated with a protective layer, the irradiation of said recording material being carried out with laser light in the near IR range. The invention further relates to a recording material and to a material which contains the recorded information.
The use of dyes that absorb in the near infra-red range (NIR) for recording information in WORM ~rite once _ead many) systems has been known for some time and is described, inter alia, by M. Emmelius in Angewandte Chernie, No. 11, pp. 1475-1502 (1989). By irradiatingsuch recording materials with laser light it is possible to effect the shift in absorption necessary for recording information in the form of bits by physical changes (e.g. by sublimation or diffusion) or by chemical changes (e.g. photochromism, isomerisation or thermal decomposition). Systems containing organic pigments devoid of metal ions which, when irradiated with laser light, undergo a phase change (change in the arrangement of the molecules) and an associated bathochrornic or hypsochromic shift of the absorption bands, are not yet known in the art.
In EP-A 0 401 791 it is disclosed that dithioquinacridones treated locally with a solvent exhibit changes in absorption caused by phase changes and are therefore suitable for recording and storing information by recording in the form of bits (corresponds to the local treatment) with an inkjet printer.
In US-A-4 760 004 there are disclosed layer materials comprising a layer of a dithioquinacridone on a metallic and electrically conductive and opaque substrate and a further layer of a hydrazone thereon. These layer systems are suitable for use as electrophotographic photoreceptors for producing latent images by selectively reducing charges with laser light after an integral charge. The latent image can then be converted by known reprographic methods into a visible image.
It has now been found that dithioquinacridones which do not have high light absorption in the NIR range undergo a phase change on exposure to laser light in the NIR range (e.g.
with a diode laser), the phase change temperature being c. 230C. The phase change is associated with a pronounced shift in the light absorption. It has further been found that this phase change is also induced by contact with a hydrazone compound and the phase change temperature can in ~his case be lowered to to c. 180C. Substrates coated with dithioquinacxidones and which may comprise a further layer of a hydrazone compound are there~ore erninently suitable for use as materials for recording, storing and reproducing information (WORM systems), for example in the form of compact discs.
In one of its aspec~s the invention relates to a process for optically recording and storing inforrnation in the form of bits, wherein a recording material comprising a substrate coated with at least one layer of a dithioquinacridone as recording layer is irradia~ed poin~ by point or linearly with laser light in the near NIR range.
Suitable substrates are typically metals, alloys, glass, ~r~inerals, ceramics and thermoset or therrnoplastic materials. The substrate may have a thickness of 0.01 rnm to 1 cm, preferably of 0.1 rnrn to 0.5 cm. Preferred substrates are glass and homopolyenc or copolymeric plastics materials. Suitable plastics materials include thermoplastic polycarbonates, polyamides, polyesters, polyacrylates and polymethacrylates, polyurethanes, polyolefins, polyvinyl chloride, polyvinylidene fluoride, polyimides, therrnoset polyesters and epoxy resins.
Dithioquinacridones are known and described, inter alia, in US-A-4 760 004. These compounds may be of formula I or Ia or rnixtures thereof S H
(Rl)n I I ~ (Rl)l, (1), H S
S S
~N~ (Rl)n (1~)~
H H
wherein Rl is F, Cl, Br, Cl-Cl8aL~cyl or Cl-C3aLIcoxy, and n is 0 or 1, 2 or 3.
Rl as aL1cyl may be linear or branched and alkyl preferably contains 1 to 12, more particularly 1 to 6 and, most preferably 1 to 3, carbon atoms. Typical examples are methyl, ethyl, n- and isopropyl, n-, iso- and tert-butyl, pentyl, hexylj octyl, nonyl, decyl, dodecyl, tetradecyl and octadecyl. Methyl and ethyl are particularly preferred. Rl as aLtcoxy is typically methoxy, ethoxy and n- and isopropoxy. ~ formulae I and Ia n is preferably 0, 1 or 2 and is most preferably 0 or 1. In a preferred embodiment of the invention, the dithioquinacridones are those of formulae I and Ia, wherein Rl is -F, -Cl, -Br, -CH3 or CH30-, and n is 0 or 1. Dithioquinacridone is especially preferred.
The thickness of the dithioquinacridone layer is typically 100 to 5000 ~, preferably 200 to 3000 A and, most preferably, 300 to 150û ~.
The substrate may be provided with one or more than one layer of dithioquinacridone, typically with 1 to 10, preferably 1 to 5 and, most preferably, 1 ~o 3, layers. The number of layers and further layers will depend mainly on the optical density of the layerarrangement, which must ensure a suf~lcient transmission at the wavelength used for recording.
The dithioquinacridone layer or the substrate can be coated with a reflective layer which has a thickness of typically 100 to 5000 A, preferably 100 to 3000 A and, most preferably, 300 to 1500 A. Particularly suitable reflective materials are metals which reflect the laser -4- ;~
light used for recording and reproduction well, for example the metals of the third, fourth and fifth main groups and the subgroups of the Pe~iodic Table of the Elements.
Particularly suitable metals are Al, In, Sn, Pb, Sb, Bi, Cu, ~g, Au, Zn, Cd, Hg, Sc, Y, La, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, Wj Fe, Co, Ni, Ru, Rh, Pd, Os, 1~, Pt and the lanthanide metals Ce, Pr, Nd, Pm, Sm, Eu, C-,d, Tb, Dy, HO, Er, Tm, Yb and Lu. A reflective layer of aluminium or gold is especially preferred on account of the high reflectivity and the ease with which it can be prepared.
The topmost layer, depending on the layer structurç for example the reflechve layer, the dithioquinacridone layer or a further auxiliary layer (conveniently of a hydrazone), may conveniently be coated with a protective layer that may have a thickness of 0.1 to 100 ~lm, preferably 0.1 to 50 ~Lm and, most preferably, 0.5 to 15 ~lm. Mainly suitable for use as protective matelial are plastics matenals that are coated in a thin layer either direct or with the aid of adhesive layers on to the substrate or the topmost layer. It is expedient to choose mechanically and thermally stable plastics materiais which have good surface properties and may be additionally modified, for example marked. The plashcs materials may be thermoset and thermoplastic materials. Radiation-cured (e.g. UV cured) protective layers which are particularly easy and economical to prepare are preferred. A host of radiation-curable materials are known. Exemplary of radiahon-curable monomers and oligomers are acrylates and methacrylates of diols, hiols and tetrols, polyimides from aromatic tehracarboxylic acids and aromatic diamines containing Cl-C4aLkyl groups in at least two ortho-positions of the amim) groups, and oligomers containing diaLcyl groups, conveniently dimethylmaleimidyl groups. Specific examples are UV-crosslinkable polymers derived from polyacrylates, such as RENGOLUX~' RZ 3200/003 or 3203/001,available from Morton International-Dr. Renger.
In a preferred embodiment of the process of this invention a further layer of an organic hydrazone is provided between the substrate which may be coated with a reflective layer and the dithioquinacridone layer or is provided on said layer, which hydrazone preferably contains an aromatic group attached to a N atom. The layer may be of pure hydrazone or in the form of a solid solution of the hydrazone in or as a homogeneous mixture with a transparent binder, for example a plastics material. The thickness of pure hydrazone layers is typically 50 to 2000 A, preferably 100 to 1000 A and, most preferably, 100 to 500 A.
The layer thickness of the solid solution is typically 0.1 to 100 ~m, preferably 0.5 to 50 ~um and, most preferably, 0.5 to 5 llm. The solid solution may contain 0.1 to 95 % by weight, preferably 1 to 80 % by weight and, most preferably, 1 to 60 % by weight of a light used for recording and reproduc~ion well, for example the metals of the third, fourth and fifth main groups and the subgroups of the Periodic Table of the Elements.
Particularly suitable metals are Al, In, Sn, Pb, Sb, Bi, Cu, Ag, Au, Zn, Cd, ~g, Sc, Y, La, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt and the lanthanide metals Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, HO, Er, Tm, Yb and Lu. A reflective layer of aluminium or gold is especially preferred on account of the high reflectivity and the ease with which it can be prepared.
The topmost layer, depending on the layer structure for example the reflective layer, the dithioquinacridone layer or a further auxiliary layer (conveniently of a hydrazone), may conveniently be coated with a protective layer that may have a thickness of 0.1 to 100 ~,lm, preferably 0.1 to 50 ~Lm and, most preferably, 0.5 to 15 ~lm. Mainly suitablç for use as protective material are plastics materials that are coated in a thin layer either direct or with the aid of adhesive layers on to the substrate or the topmost layer. It is expedient to choose mechanically and thermally stable plastics materials which have good surface properties and may be additionally modified, for example marked. The plastics materials may be thermoset and thermoplastic materials. Radiation-cured (e.g. UV cured) protective layers which are particularly easy and economical to prepare are preferred. A host of radiation-curable materials are known. Exemplary of radiation-curable monomers and oligomers are acrylates and methacrylates of diols, triols and tetrols, polyimides from aromatic tetracarboxylic acids and aromatic diamines containing Cl-C4alkyl groups in at least two ortho-positions of the amino groups, and oligomers containing diaL~yl groups, conveniently dimethylmaleimidyl groups. Specific examples are UV-crosslinkable polymers derived from polyacrylates, such as RENGOL~JX(~) RZ 3200/003 or 3203/001, available from Morton International-Dr. Renger.
In a preferred embodiment of the process of this invention a further layer of an organic hydrazone is provided between the substrate which may be coated with a reflective layer and the dithioquinacridone layer or is provided on said layer, which hydrazone prefçrably contains an aromatic group attached to a N atom. The layer may be of pure hydrazone or in the form of a solid solution of the hydrazone in or as a homogeneous mixture with a transparent binder, for example a plastics material. The thickness of pure hydrazone layers is typically 50 to 2000 ~, preferably 100 to 1000 ~ and, most preferably, 100 to 500 ~.
The layer thickness of the solid solution is typically 0.1 to 100 ~Im, preferably 0.5 to 50 l,lm and, most preferably, 0.5 to 5 ~,lm. The solid solution may contain 0.1 to 95 % by weight, preferably 1 to 80 % by weight and, most preferably, 1 to 60 % by weight of a f3\N' ~
which is unsubstituted or substituted by F, Cl, Br, Cl-C6aL~cyl, Cl-C6aLkoxy or di(cl-c6alkyl)amino~ and E~6 is Cl-~6alkYl~
R4 and Rs are each independently of the other Cl-C6alkyl, phenyl, naphthyl or ben~yl, or phenyl, naph~yl or benzyl which are each substituted by ~, Cl, Br, Cl-C6aLIcyl, Cl-C6aL~oxy or di~Cl-C6alkyl)amino, andnisOor 1.
In formula II n is preferably O. R2, R3, R4, Rs, R6 and substituents as aLkyl may be linear or branched and contain preferably 1 to 4 carbon atoms, most preferably 1 or 2 carbon atoms. Typical examples are methyl, ethyl, n- and isopropyl, n-, iso- and tert-butyl, pentyl and hexyl. Methyl and ethyl are prefeIred.
The alkoxy substituent preferably contains 1 to 4 carbon atoms and may be linear or branched. Typical examples are methoxy, ethoxy, n- and isopropoxy, n-, iso- and tert-butoxy, pentoxy and hexoxy. Methoxy and ethoxy are preferred.
Typical examples of aLkyla nino substituents are dimethylarnnio, diethylamino, methylethylamino, di-n-propylamino or diisopropylamino, di-n-butylamino, n-propylmethylamino, n-butylmethylamino, n-propylethylarnino, n-butylethylamino,methylphenylamino, ethylphenylamino, methylbenzylamino and ethylbenzylamino.
Typical preferred hydrazones are those of formulae ~CH=N-N(C6~ls)2 - 7 - 2~ r~
~,J~l~ CH= N-N(C6H5)(C~13) l 2H5 (c6Hs)2N-N=Hc ~ N(C2H5)2 .
(c1oH7)(c6Hs)N-N=llc ~=~ N(C2H5)2, (C6~5)2N-~=CH-CEI=C(P-CH30-c6Hs)2 The recording materials suitable for use in the prac~ice of this invention can be prepared by methods which are known per se. Dependin~ on the materals used and their mode of use, different coating techniques can be applied.
Substrates containing a hyclrazone can be prepared by the blencling and shaping techniques commonly used t`or thermoset and therrnoplastic resinx, typically by casting, compression moulding, injection moulding and extrusion methods.
Suitable coating techniques include imrnersion, casting, brushing, doctor coating, centrifugal casting, and vapour deposition methods which are carned out under vacuum.
If, ~or example, casting methods are employed, solutions in organic solvents will normally be used, which solutions may additionally contain a bincler if a hyclrazone is used. When using solvents, care must be taken that the substrates are inactive to these solvents. It is preferred to prepare all layers by vapour deposition, especially under vacuum. Suitable coating techniques are described, inter alia, in EP-A-0 401 791.
The recording layer or layers and the metallic reflective layers are preferably applied by vapour deposition under vacuum. The material to be applied is ~lrst put into a suitable vessel, which may be equipped with a resis~ance heating, and placed into a vacuum chamber. The substrate on to which the material is to be deposited is clamped above the vessel with the material to be vapourised. The clamp is constructed such that the substrate can be rotated (e.g. at 50 rpm) and heated. The vacuum chamber is evacuated to about 1.3 . 10-5 to 1.3 . 10-6 mbar (10-5 to 10-6 torr), and the heating is adjusted such that the temperature of the material to be deposited rises to its vapourising temperature. The deposition is continued until the layer applied has the desired thickness. Depending on the system, first the recording material and then the reflective layer is applied, or conversely.
The application of a reflective layer can în some cases be disp~nsed with. This method of vapour deposition is especially suitable for the simultaneous application of dithioquinacri-dones and hydrazones to form homogeneous rnixed layers.
It is particularly preferred to apply the metallic reflective layer by the sputtering technique on account of the good bonding to the substrate. The material to be applied (e.g.
aluminium) in the forrn of a plate is used as a "target" electrode, whereas the substrate is mounted on the counter-electrode. First the vacuum chamber is evacuated to about10-6 torr and then inert gas, e.g. argon, is introduced until the pressure is about 10-3 torr.
Be~ween the target electrode and the counter-electrode a high direct current voltage or radio-frequency voltage of seYeral kV is applied, optionally using perman-ent magnets (magnetron sputtering) so as to produce Ar+ plasma. The metal particles sputtered by the Ar~ ions of the target electrode are uniformly and f~y deposited on the substrate.
Coating is effected within a few to several minutes, depending on the target materials, sputtering technique and sputtering conditions. This sputtering technique is described in detail in the technical literature (e.g. W. Kern and L. Vossen, "Thin Film Processes", Academic Press, 1978).
The thickness of the layer formed by vapour deposition can be monitored with the aid of an optical system which measures the reflectivity of the reflective surface coated with the absorption material. It is preferred to monitor the growth of the layer thickness with a quartz resonator.
Protective layers are prefereably applied by spin coating and crosslinked with UV light when using light-sensitive materials.
The material eligible for use in the practice of this invention is pre-eminently suitable for recording information by irradiation with laser light in the NIR range. After irradiation a markedly increased absorption of the laser light is observed, so that the reflection or transmission after irradiation is substantially lower. The change in reflection or transmission can therefore be used for reading out inforrnation without the stored infolmation being destroyed by the laser light used for reading out. The information can there~ore be read out repeatedly.
The structure of the recording material of this invention will depend mainly on the method of reading out: known techniques are measuring the change in transmission or reflection.
If the recording system functions according to a ch~nge in light transmission, the structure may suitably comprise: transparent substrate/recording layer (one or more layers)/if appropriate, transparent protective layer. The radiation for writing and reading out information can be applied either from the substrate side of the system or from the recording layer or protective layer side, the light detector always being on the adjacent side.
If the recording process functions according to a change in reflectivity, then other layered structures are possible for the substrate: transparent substrate/recording layer (one or more layers)/reflective layer/if appropriate, protective layer (not necessarily transparent), or subs~rate (not necessarily transparent)/reflective layer/recording layer/if appropriate, transparent protective layer. In the former case, the radiation is applied from the substrate side of the system, whereas in the latter case the radiation is applied from the recording layer or, if present, from the protective layer side of the system. In both cases, the light detector is on the same side as the light source. The first mentioned layer structure of the inventive recording material is generally preferred.
Suitable lasers include comrnercial diode lasers, preferably semiconductor diode lasers, for example GaAsAl, InGaAlP or GaAs lasers with a wavelength of 780, 650 and 830 nm respectively7 or He/Ne lasers (633 nm) and argon lasers (514 nm). The information can be written point by point or Linearly using a light modulator.
The energy of the laser light used for recording may be typically from 10 nJ/marking (bit~, preferably from 0.2 to 5 nJ/marking (bit) and, most preferably7 0.8 to 3 nJ/marking (bit).
The amount of energy is essentially controlled by the irradiation time, for example by pulses in the range from a few microseconds, typically 10 to 100 nanoseconds.
The method of this invention makes it possible to store information with a high degree of reliability and durability, the information being distinguished by very good mechanical and thermal stability as well as by superior light stability and clear edge definition. A
particular advantage is the surprisingly high signal-to-noise ratio of carrier material to '(h~ d ~
information marking, which permits the information to be read out easily. In addition, the optical recording system is simple and inexpensive.
The information is read out by measuring the absorption by the reflection or ~ransmission method using laser light. It is particularly advantageous that laser light of the wavelength used for recording can be utilised, i.e. a second laser also need not be used. In a preferred embodiment of the process, information is written and read out at the same wavelength.
The info~nation is normally read out by using low-energy lasers whose radiation intensity is ten- to fi~ty-fold lower than the laser light used for recording. The inforrnation can be read out once or repeatedly. The shift in the absorption spectrum and/or the stored information can be read out with a photodetector using a low-energy laser. Suitable photodetectors comprise PIN photodiodes as well as microscopic spectrophotometers, e.g.
UMSP 80 available from Carl Zeiss, which make it possible to measure the spectral changes by transmission or absorption and, in particular, reflection.
A further object of the invention is the provision of a material ~or optical recording and stonng information, comprising at least one layer of a dithioquinacridone as recording material coated on a Iransparent and dielectric substrate. Between the recording material and the substrate or on the recording material there may be provided a layer of an organic hydra~.one together with a transparent binder, or the recording material may be a homogeneous mixture of dithioquinacridone and an organic hydrazone. The topmost layer may be coated wi~h a reflective layer that is desirably c,oated with a protective layer. In other respects, the embodiments and preferences previously cited apply.
It is yet a further object of the invention to provide a material on which information is written, the recording layer of which material contains the written information in the forrn of bits which have higher absorption in the NlR range than in the unchanged environment and thus have reduced reflectivity and transmission. In other respects, the embodiments and preferences previously cited apply.
The material on which information is written is in particular an optical information material of the WORM type. It may be used typically as a playable compact disc, as storage material for computers or as an identity and security card.
The following Examples illustrate the invention in more detail.
9 ~
Example 1: Recording material having a recording layer of dithioquinacridone and a hydra~one interlayer.
N'-Ethylcarbazol-2-aldehyde-N,N-diphenylhydrazone is vapourised under a high vacuum (c. 4x10-6 mbar) to a layer thickness of c. 200 ~ on to a polycarbs)nate substrate (thickness 1.2 mm). Afterwards, dithioquinacridone is vapourised under a high vacuum on ~o this layer to a layer thickness of c. 800 A. A gold reflective layer is then vapourised to a thickness of c. 1000 A on to this dithioquinacridone layer by high vacuum vapourdeposition. Elec~ronic information is written dotwise with a GaAsAl diode laser (Toshiba) of 780 nm (20 mW). The reflectivity measured through the substrate before and after writing at the same wavelength of 780 nm is 73 % and 35 %, respectively.
Example 2: Recording material having a recording layer of dithioquinacridone and an interlayer of a polycarbonate/hy~razone film.
1 g of p-diethylaminobenzaldehyde-N,N-diphenylhydrawne and 0.5 g of polycarbonate (commercial Makrolon(g) are dissolved in 10 ml of cyclopentanone and the solution is coated by centrifugal casting to a layer thickness of 0.8 ~lm on to a glass substrate (thickness 1.0 mm~. As described in Example 1, a layer of dithioquinacridone is applied to a thickness of 500 ~, followed by thç application of a gold reflective layer to a thickness of 1500 ~. The reflectivity is 73 % before writing and 40 % after writing Example 3: Recording material having a recording layer of dithioquinacridone.
In accordance wi~h the procedure of Example 11 layers of dithioquinacridone (thickness 700 A) and aluminium (thickness 2000 ~) are applied to a glass substrate (thickness 1.0 mm~. The reflectivity is 65 % before writing and 38 % after writing.
Process for o~ticallY storing information The present invention relates to a process for optically recording and storing information in the form of bits by irradiating a recording material comprising a subshate coated with at least one layer of a dithioquinacridone as reco~ding material, which recording material may be coated with a reflective layer or a reflective layer ma~ be provided between ~e substrate and the dithioquinacriclone layer~ and an additional layer containing an organic hydrazone may be provided between dle substrate or between the reflective layers and the dithioquinacridone layer, or the dithioquinacridone layer may be mixed with a hydrazone, and the topmost layer may be coated with a protective layer, the irradiation of said recording material being carried out with laser light in the near IR range. The invention further relates to a recording material and to a material which contains the recorded information.
The use of dyes that absorb in the near infra-red range (NIR) for recording information in WORM ~rite once _ead many) systems has been known for some time and is described, inter alia, by M. Emmelius in Angewandte Chernie, No. 11, pp. 1475-1502 (1989). By irradiatingsuch recording materials with laser light it is possible to effect the shift in absorption necessary for recording information in the form of bits by physical changes (e.g. by sublimation or diffusion) or by chemical changes (e.g. photochromism, isomerisation or thermal decomposition). Systems containing organic pigments devoid of metal ions which, when irradiated with laser light, undergo a phase change (change in the arrangement of the molecules) and an associated bathochrornic or hypsochromic shift of the absorption bands, are not yet known in the art.
In EP-A 0 401 791 it is disclosed that dithioquinacridones treated locally with a solvent exhibit changes in absorption caused by phase changes and are therefore suitable for recording and storing information by recording in the form of bits (corresponds to the local treatment) with an inkjet printer.
In US-A-4 760 004 there are disclosed layer materials comprising a layer of a dithioquinacridone on a metallic and electrically conductive and opaque substrate and a further layer of a hydrazone thereon. These layer systems are suitable for use as electrophotographic photoreceptors for producing latent images by selectively reducing charges with laser light after an integral charge. The latent image can then be converted by known reprographic methods into a visible image.
It has now been found that dithioquinacridones which do not have high light absorption in the NIR range undergo a phase change on exposure to laser light in the NIR range (e.g.
with a diode laser), the phase change temperature being c. 230C. The phase change is associated with a pronounced shift in the light absorption. It has further been found that this phase change is also induced by contact with a hydrazone compound and the phase change temperature can in ~his case be lowered to to c. 180C. Substrates coated with dithioquinacxidones and which may comprise a further layer of a hydrazone compound are there~ore erninently suitable for use as materials for recording, storing and reproducing information (WORM systems), for example in the form of compact discs.
In one of its aspec~s the invention relates to a process for optically recording and storing inforrnation in the form of bits, wherein a recording material comprising a substrate coated with at least one layer of a dithioquinacridone as recording layer is irradia~ed poin~ by point or linearly with laser light in the near NIR range.
Suitable substrates are typically metals, alloys, glass, ~r~inerals, ceramics and thermoset or therrnoplastic materials. The substrate may have a thickness of 0.01 rnm to 1 cm, preferably of 0.1 rnrn to 0.5 cm. Preferred substrates are glass and homopolyenc or copolymeric plastics materials. Suitable plastics materials include thermoplastic polycarbonates, polyamides, polyesters, polyacrylates and polymethacrylates, polyurethanes, polyolefins, polyvinyl chloride, polyvinylidene fluoride, polyimides, therrnoset polyesters and epoxy resins.
Dithioquinacridones are known and described, inter alia, in US-A-4 760 004. These compounds may be of formula I or Ia or rnixtures thereof S H
(Rl)n I I ~ (Rl)l, (1), H S
S S
~N~ (Rl)n (1~)~
H H
wherein Rl is F, Cl, Br, Cl-Cl8aL~cyl or Cl-C3aLIcoxy, and n is 0 or 1, 2 or 3.
Rl as aL1cyl may be linear or branched and alkyl preferably contains 1 to 12, more particularly 1 to 6 and, most preferably 1 to 3, carbon atoms. Typical examples are methyl, ethyl, n- and isopropyl, n-, iso- and tert-butyl, pentyl, hexylj octyl, nonyl, decyl, dodecyl, tetradecyl and octadecyl. Methyl and ethyl are particularly preferred. Rl as aLtcoxy is typically methoxy, ethoxy and n- and isopropoxy. ~ formulae I and Ia n is preferably 0, 1 or 2 and is most preferably 0 or 1. In a preferred embodiment of the invention, the dithioquinacridones are those of formulae I and Ia, wherein Rl is -F, -Cl, -Br, -CH3 or CH30-, and n is 0 or 1. Dithioquinacridone is especially preferred.
The thickness of the dithioquinacridone layer is typically 100 to 5000 ~, preferably 200 to 3000 A and, most preferably, 300 to 150û ~.
The substrate may be provided with one or more than one layer of dithioquinacridone, typically with 1 to 10, preferably 1 to 5 and, most preferably, 1 ~o 3, layers. The number of layers and further layers will depend mainly on the optical density of the layerarrangement, which must ensure a suf~lcient transmission at the wavelength used for recording.
The dithioquinacridone layer or the substrate can be coated with a reflective layer which has a thickness of typically 100 to 5000 A, preferably 100 to 3000 A and, most preferably, 300 to 1500 A. Particularly suitable reflective materials are metals which reflect the laser -4- ;~
light used for recording and reproduction well, for example the metals of the third, fourth and fifth main groups and the subgroups of the Pe~iodic Table of the Elements.
Particularly suitable metals are Al, In, Sn, Pb, Sb, Bi, Cu, ~g, Au, Zn, Cd, Hg, Sc, Y, La, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, Wj Fe, Co, Ni, Ru, Rh, Pd, Os, 1~, Pt and the lanthanide metals Ce, Pr, Nd, Pm, Sm, Eu, C-,d, Tb, Dy, HO, Er, Tm, Yb and Lu. A reflective layer of aluminium or gold is especially preferred on account of the high reflectivity and the ease with which it can be prepared.
The topmost layer, depending on the layer structurç for example the reflechve layer, the dithioquinacridone layer or a further auxiliary layer (conveniently of a hydrazone), may conveniently be coated with a protective layer that may have a thickness of 0.1 to 100 ~lm, preferably 0.1 to 50 ~Lm and, most preferably, 0.5 to 15 ~lm. Mainly suitable for use as protective matelial are plastics matenals that are coated in a thin layer either direct or with the aid of adhesive layers on to the substrate or the topmost layer. It is expedient to choose mechanically and thermally stable plastics materiais which have good surface properties and may be additionally modified, for example marked. The plashcs materials may be thermoset and thermoplastic materials. Radiation-cured (e.g. UV cured) protective layers which are particularly easy and economical to prepare are preferred. A host of radiation-curable materials are known. Exemplary of radiahon-curable monomers and oligomers are acrylates and methacrylates of diols, hiols and tetrols, polyimides from aromatic tehracarboxylic acids and aromatic diamines containing Cl-C4aLkyl groups in at least two ortho-positions of the amim) groups, and oligomers containing diaLcyl groups, conveniently dimethylmaleimidyl groups. Specific examples are UV-crosslinkable polymers derived from polyacrylates, such as RENGOLUX~' RZ 3200/003 or 3203/001,available from Morton International-Dr. Renger.
In a preferred embodiment of the process of this invention a further layer of an organic hydrazone is provided between the substrate which may be coated with a reflective layer and the dithioquinacridone layer or is provided on said layer, which hydrazone preferably contains an aromatic group attached to a N atom. The layer may be of pure hydrazone or in the form of a solid solution of the hydrazone in or as a homogeneous mixture with a transparent binder, for example a plastics material. The thickness of pure hydrazone layers is typically 50 to 2000 A, preferably 100 to 1000 A and, most preferably, 100 to 500 A.
The layer thickness of the solid solution is typically 0.1 to 100 ~m, preferably 0.5 to 50 ~um and, most preferably, 0.5 to 5 llm. The solid solution may contain 0.1 to 95 % by weight, preferably 1 to 80 % by weight and, most preferably, 1 to 60 % by weight of a light used for recording and reproduc~ion well, for example the metals of the third, fourth and fifth main groups and the subgroups of the Periodic Table of the Elements.
Particularly suitable metals are Al, In, Sn, Pb, Sb, Bi, Cu, Ag, Au, Zn, Cd, ~g, Sc, Y, La, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt and the lanthanide metals Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, HO, Er, Tm, Yb and Lu. A reflective layer of aluminium or gold is especially preferred on account of the high reflectivity and the ease with which it can be prepared.
The topmost layer, depending on the layer structure for example the reflective layer, the dithioquinacridone layer or a further auxiliary layer (conveniently of a hydrazone), may conveniently be coated with a protective layer that may have a thickness of 0.1 to 100 ~,lm, preferably 0.1 to 50 ~Lm and, most preferably, 0.5 to 15 ~lm. Mainly suitablç for use as protective material are plastics materials that are coated in a thin layer either direct or with the aid of adhesive layers on to the substrate or the topmost layer. It is expedient to choose mechanically and thermally stable plastics materials which have good surface properties and may be additionally modified, for example marked. The plastics materials may be thermoset and thermoplastic materials. Radiation-cured (e.g. UV cured) protective layers which are particularly easy and economical to prepare are preferred. A host of radiation-curable materials are known. Exemplary of radiation-curable monomers and oligomers are acrylates and methacrylates of diols, triols and tetrols, polyimides from aromatic tetracarboxylic acids and aromatic diamines containing Cl-C4alkyl groups in at least two ortho-positions of the amino groups, and oligomers containing diaL~yl groups, conveniently dimethylmaleimidyl groups. Specific examples are UV-crosslinkable polymers derived from polyacrylates, such as RENGOL~JX(~) RZ 3200/003 or 3203/001, available from Morton International-Dr. Renger.
In a preferred embodiment of the process of this invention a further layer of an organic hydrazone is provided between the substrate which may be coated with a reflective layer and the dithioquinacridone layer or is provided on said layer, which hydrazone prefçrably contains an aromatic group attached to a N atom. The layer may be of pure hydrazone or in the form of a solid solution of the hydrazone in or as a homogeneous mixture with a transparent binder, for example a plastics material. The thickness of pure hydrazone layers is typically 50 to 2000 ~, preferably 100 to 1000 ~ and, most preferably, 100 to 500 ~.
The layer thickness of the solid solution is typically 0.1 to 100 ~Im, preferably 0.5 to 50 l,lm and, most preferably, 0.5 to 5 ~,lm. The solid solution may contain 0.1 to 95 % by weight, preferably 1 to 80 % by weight and, most preferably, 1 to 60 % by weight of a f3\N' ~
which is unsubstituted or substituted by F, Cl, Br, Cl-C6aL~cyl, Cl-C6aLkoxy or di(cl-c6alkyl)amino~ and E~6 is Cl-~6alkYl~
R4 and Rs are each independently of the other Cl-C6alkyl, phenyl, naphthyl or ben~yl, or phenyl, naph~yl or benzyl which are each substituted by ~, Cl, Br, Cl-C6aLIcyl, Cl-C6aL~oxy or di~Cl-C6alkyl)amino, andnisOor 1.
In formula II n is preferably O. R2, R3, R4, Rs, R6 and substituents as aLkyl may be linear or branched and contain preferably 1 to 4 carbon atoms, most preferably 1 or 2 carbon atoms. Typical examples are methyl, ethyl, n- and isopropyl, n-, iso- and tert-butyl, pentyl and hexyl. Methyl and ethyl are prefeIred.
The alkoxy substituent preferably contains 1 to 4 carbon atoms and may be linear or branched. Typical examples are methoxy, ethoxy, n- and isopropoxy, n-, iso- and tert-butoxy, pentoxy and hexoxy. Methoxy and ethoxy are preferred.
Typical examples of aLkyla nino substituents are dimethylarnnio, diethylamino, methylethylamino, di-n-propylamino or diisopropylamino, di-n-butylamino, n-propylmethylamino, n-butylmethylamino, n-propylethylarnino, n-butylethylamino,methylphenylamino, ethylphenylamino, methylbenzylamino and ethylbenzylamino.
Typical preferred hydrazones are those of formulae ~CH=N-N(C6~ls)2 - 7 - 2~ r~
~,J~l~ CH= N-N(C6H5)(C~13) l 2H5 (c6Hs)2N-N=Hc ~ N(C2H5)2 .
(c1oH7)(c6Hs)N-N=llc ~=~ N(C2H5)2, (C6~5)2N-~=CH-CEI=C(P-CH30-c6Hs)2 The recording materials suitable for use in the prac~ice of this invention can be prepared by methods which are known per se. Dependin~ on the materals used and their mode of use, different coating techniques can be applied.
Substrates containing a hyclrazone can be prepared by the blencling and shaping techniques commonly used t`or thermoset and therrnoplastic resinx, typically by casting, compression moulding, injection moulding and extrusion methods.
Suitable coating techniques include imrnersion, casting, brushing, doctor coating, centrifugal casting, and vapour deposition methods which are carned out under vacuum.
If, ~or example, casting methods are employed, solutions in organic solvents will normally be used, which solutions may additionally contain a bincler if a hyclrazone is used. When using solvents, care must be taken that the substrates are inactive to these solvents. It is preferred to prepare all layers by vapour deposition, especially under vacuum. Suitable coating techniques are described, inter alia, in EP-A-0 401 791.
The recording layer or layers and the metallic reflective layers are preferably applied by vapour deposition under vacuum. The material to be applied is ~lrst put into a suitable vessel, which may be equipped with a resis~ance heating, and placed into a vacuum chamber. The substrate on to which the material is to be deposited is clamped above the vessel with the material to be vapourised. The clamp is constructed such that the substrate can be rotated (e.g. at 50 rpm) and heated. The vacuum chamber is evacuated to about 1.3 . 10-5 to 1.3 . 10-6 mbar (10-5 to 10-6 torr), and the heating is adjusted such that the temperature of the material to be deposited rises to its vapourising temperature. The deposition is continued until the layer applied has the desired thickness. Depending on the system, first the recording material and then the reflective layer is applied, or conversely.
The application of a reflective layer can în some cases be disp~nsed with. This method of vapour deposition is especially suitable for the simultaneous application of dithioquinacri-dones and hydrazones to form homogeneous rnixed layers.
It is particularly preferred to apply the metallic reflective layer by the sputtering technique on account of the good bonding to the substrate. The material to be applied (e.g.
aluminium) in the forrn of a plate is used as a "target" electrode, whereas the substrate is mounted on the counter-electrode. First the vacuum chamber is evacuated to about10-6 torr and then inert gas, e.g. argon, is introduced until the pressure is about 10-3 torr.
Be~ween the target electrode and the counter-electrode a high direct current voltage or radio-frequency voltage of seYeral kV is applied, optionally using perman-ent magnets (magnetron sputtering) so as to produce Ar+ plasma. The metal particles sputtered by the Ar~ ions of the target electrode are uniformly and f~y deposited on the substrate.
Coating is effected within a few to several minutes, depending on the target materials, sputtering technique and sputtering conditions. This sputtering technique is described in detail in the technical literature (e.g. W. Kern and L. Vossen, "Thin Film Processes", Academic Press, 1978).
The thickness of the layer formed by vapour deposition can be monitored with the aid of an optical system which measures the reflectivity of the reflective surface coated with the absorption material. It is preferred to monitor the growth of the layer thickness with a quartz resonator.
Protective layers are prefereably applied by spin coating and crosslinked with UV light when using light-sensitive materials.
The material eligible for use in the practice of this invention is pre-eminently suitable for recording information by irradiation with laser light in the NIR range. After irradiation a markedly increased absorption of the laser light is observed, so that the reflection or transmission after irradiation is substantially lower. The change in reflection or transmission can therefore be used for reading out inforrnation without the stored infolmation being destroyed by the laser light used for reading out. The information can there~ore be read out repeatedly.
The structure of the recording material of this invention will depend mainly on the method of reading out: known techniques are measuring the change in transmission or reflection.
If the recording system functions according to a ch~nge in light transmission, the structure may suitably comprise: transparent substrate/recording layer (one or more layers)/if appropriate, transparent protective layer. The radiation for writing and reading out information can be applied either from the substrate side of the system or from the recording layer or protective layer side, the light detector always being on the adjacent side.
If the recording process functions according to a change in reflectivity, then other layered structures are possible for the substrate: transparent substrate/recording layer (one or more layers)/reflective layer/if appropriate, protective layer (not necessarily transparent), or subs~rate (not necessarily transparent)/reflective layer/recording layer/if appropriate, transparent protective layer. In the former case, the radiation is applied from the substrate side of the system, whereas in the latter case the radiation is applied from the recording layer or, if present, from the protective layer side of the system. In both cases, the light detector is on the same side as the light source. The first mentioned layer structure of the inventive recording material is generally preferred.
Suitable lasers include comrnercial diode lasers, preferably semiconductor diode lasers, for example GaAsAl, InGaAlP or GaAs lasers with a wavelength of 780, 650 and 830 nm respectively7 or He/Ne lasers (633 nm) and argon lasers (514 nm). The information can be written point by point or Linearly using a light modulator.
The energy of the laser light used for recording may be typically from 10 nJ/marking (bit~, preferably from 0.2 to 5 nJ/marking (bit) and, most preferably7 0.8 to 3 nJ/marking (bit).
The amount of energy is essentially controlled by the irradiation time, for example by pulses in the range from a few microseconds, typically 10 to 100 nanoseconds.
The method of this invention makes it possible to store information with a high degree of reliability and durability, the information being distinguished by very good mechanical and thermal stability as well as by superior light stability and clear edge definition. A
particular advantage is the surprisingly high signal-to-noise ratio of carrier material to '(h~ d ~
information marking, which permits the information to be read out easily. In addition, the optical recording system is simple and inexpensive.
The information is read out by measuring the absorption by the reflection or ~ransmission method using laser light. It is particularly advantageous that laser light of the wavelength used for recording can be utilised, i.e. a second laser also need not be used. In a preferred embodiment of the process, information is written and read out at the same wavelength.
The info~nation is normally read out by using low-energy lasers whose radiation intensity is ten- to fi~ty-fold lower than the laser light used for recording. The inforrnation can be read out once or repeatedly. The shift in the absorption spectrum and/or the stored information can be read out with a photodetector using a low-energy laser. Suitable photodetectors comprise PIN photodiodes as well as microscopic spectrophotometers, e.g.
UMSP 80 available from Carl Zeiss, which make it possible to measure the spectral changes by transmission or absorption and, in particular, reflection.
A further object of the invention is the provision of a material ~or optical recording and stonng information, comprising at least one layer of a dithioquinacridone as recording material coated on a Iransparent and dielectric substrate. Between the recording material and the substrate or on the recording material there may be provided a layer of an organic hydra~.one together with a transparent binder, or the recording material may be a homogeneous mixture of dithioquinacridone and an organic hydrazone. The topmost layer may be coated wi~h a reflective layer that is desirably c,oated with a protective layer. In other respects, the embodiments and preferences previously cited apply.
It is yet a further object of the invention to provide a material on which information is written, the recording layer of which material contains the written information in the forrn of bits which have higher absorption in the NlR range than in the unchanged environment and thus have reduced reflectivity and transmission. In other respects, the embodiments and preferences previously cited apply.
The material on which information is written is in particular an optical information material of the WORM type. It may be used typically as a playable compact disc, as storage material for computers or as an identity and security card.
The following Examples illustrate the invention in more detail.
9 ~
Example 1: Recording material having a recording layer of dithioquinacridone and a hydra~one interlayer.
N'-Ethylcarbazol-2-aldehyde-N,N-diphenylhydrazone is vapourised under a high vacuum (c. 4x10-6 mbar) to a layer thickness of c. 200 ~ on to a polycarbs)nate substrate (thickness 1.2 mm). Afterwards, dithioquinacridone is vapourised under a high vacuum on ~o this layer to a layer thickness of c. 800 A. A gold reflective layer is then vapourised to a thickness of c. 1000 A on to this dithioquinacridone layer by high vacuum vapourdeposition. Elec~ronic information is written dotwise with a GaAsAl diode laser (Toshiba) of 780 nm (20 mW). The reflectivity measured through the substrate before and after writing at the same wavelength of 780 nm is 73 % and 35 %, respectively.
Example 2: Recording material having a recording layer of dithioquinacridone and an interlayer of a polycarbonate/hy~razone film.
1 g of p-diethylaminobenzaldehyde-N,N-diphenylhydrawne and 0.5 g of polycarbonate (commercial Makrolon(g) are dissolved in 10 ml of cyclopentanone and the solution is coated by centrifugal casting to a layer thickness of 0.8 ~lm on to a glass substrate (thickness 1.0 mm~. As described in Example 1, a layer of dithioquinacridone is applied to a thickness of 500 ~, followed by thç application of a gold reflective layer to a thickness of 1500 ~. The reflectivity is 73 % before writing and 40 % after writing Example 3: Recording material having a recording layer of dithioquinacridone.
In accordance wi~h the procedure of Example 11 layers of dithioquinacridone (thickness 700 A) and aluminium (thickness 2000 ~) are applied to a glass substrate (thickness 1.0 mm~. The reflectivity is 65 % before writing and 38 % after writing.
Claims (39)
1. A process for optically recording and storing information in the form of bits, wherein a recording material comprising a substrate coated with at least one layer of a dithioquin-acridone as recording layer is irradiated point by point or linearly with laser light in the near NIR range.
2. A process according to claim 1, wherein the substrate is selected from the group consisting of metals, alloys, glass, minerals, ceramics and thermoset and thermoplastic materials.
3. A process according to claim 2, wherein the substrate is selected from glass and homo-and copolymeric plastics materials.
4. A process according to claim 3, wherein the plastics materials are selected from the group consisting of thermoplastic polycarbonates, polyamides, polyesters, polyacrylates and polymethacrylates, polyurethanes, polyolefins, polyvinyl chloride, polyvinylidene fluoride, polyimides, thermoset polyesters and epoxy resins.
5. A process according to claim 1, wherein the substrate has a thickness of 0.01 to 1 cm.
6. A process according to claim 1, wherein the dithioquinacridones are of formula I or Ia or mixtures of said dithioquinacridones (I), (Ia), wherein R1 is F, Cl, Br, C1-C8alkyl or C1-C3alkoxy, and n is 0 or 1, 2 or 3.
7. A process according to claim 69 wherein R1 is -F, -Cl, -Br, -CH3 or CH3O- and n is 0 or 1.
8. A process according to claim 1, wherein the layer consists of dithioquinacridone.
9. A process according to claim 1, wherein the dithioqninacridone layer has a thickness of 100 to 5000 .ANG..
10. A process according to claim 1, wherein the dithioquinacridone layer has a thickness of 200 to 3000 .ANG..
11. A process according to claim 1, wherein the dithioquinacridone layer or the substrate is coated with a reflective layer.
12. A process according to claim 11, wherein the reflective layer has a thickness of 100 to 5000 .ANG..
13. A process according to claim 1, wherein the reflective layer consists of a metal of the third, fourth and fifth main group and the subgroups of the Periodic Table of the Elements.
14. A process according to claim 13, wherein the reflective layer is of aluminium or gold.
15. A process according to claim 1, wherein the topmost layer is coated with a protective layer.
16. A process according to claim 1, wherein a further layer of an organic hydrazone is provided between the substrate and the dithioquinacridone layer or on the dithioquinacri-done layer.
17. A process according to claim 16, wherein the layer consists of a pure hydrazone or is in the form of a solid solution of the hydrazone in or as a homogeneous mixture with a transparent binder.
18. A process according to claim 16, wherein the layer of a pure hydrazone has a thickness of 50 to 2000 .ANG..
19. A process according to claim 17, wherein the layer of the solid solution or mixture has a thickness of 0.1 to 100 µm.
20. A process according to claim 17, wherein the layer of a hydrazone and a binder is the transparent substrate of the recording material.
21. A process according to claim 1, wherein the recording material consists of at least one layer of a homogeneous mixture of a dithioquinacridone and a hydrazone.
22. A process according to claim 16, wherein the hydrazone contains 6 to 40 carbon atoms.
23. A process according to claim 16, wherein the hydrazone has the formula II
(II) wherein R2 is H, C1-C6alkyl or phenyl which is unsubstituted or substituted by F, Cl, Br, C1-C6alkyl, C1-C6alkoxy, di(C1-C6alkyl)amino, diphenylamino, dibenzylamino, phenylbenzylamino, (C1-C6alkyl)phenylamino or (C1-C6alkyl)benzylamino, R3 is phenyl, naphthyl, anthryl, styryl, pyridyl, furyl or thiophenyl which are unsubstituted or substituted by F, Cl, Br, C1-C6alkyl, C1-C6alkoxy, di(C1-C6alkyl)amino, diphenyl-lamino, dibenzylamino, phenylbenzylamino, (C1-C6alkyl)phenylamino or (C1-C6alkyl)benzylamino, or R2 is H and R3 is a carbazole radical of formula which is unsubstituted or substituted by F, Cl, Br, C1-C6alkoxy or di(C1-C6alkyl)amino, and R6 is C1-C6alkyl, R4 and R5 are each independently of the other C1-C6alkyl, phenyl, naphthyl or benzyl, or phenyl, naphthyl or benzyl which are substituted by F, Cl, Br, C1-C6alkyl, C1-C6alkoxy or di(C1-C6alkyl)amino, and n is 0 or 1.
(II) wherein R2 is H, C1-C6alkyl or phenyl which is unsubstituted or substituted by F, Cl, Br, C1-C6alkyl, C1-C6alkoxy, di(C1-C6alkyl)amino, diphenylamino, dibenzylamino, phenylbenzylamino, (C1-C6alkyl)phenylamino or (C1-C6alkyl)benzylamino, R3 is phenyl, naphthyl, anthryl, styryl, pyridyl, furyl or thiophenyl which are unsubstituted or substituted by F, Cl, Br, C1-C6alkyl, C1-C6alkoxy, di(C1-C6alkyl)amino, diphenyl-lamino, dibenzylamino, phenylbenzylamino, (C1-C6alkyl)phenylamino or (C1-C6alkyl)benzylamino, or R2 is H and R3 is a carbazole radical of formula which is unsubstituted or substituted by F, Cl, Br, C1-C6alkoxy or di(C1-C6alkyl)amino, and R6 is C1-C6alkyl, R4 and R5 are each independently of the other C1-C6alkyl, phenyl, naphthyl or benzyl, or phenyl, naphthyl or benzyl which are substituted by F, Cl, Br, C1-C6alkyl, C1-C6alkoxy or di(C1-C6alkyl)amino, and n is 0 or 1.
24. A process according to claim 16, wherein the hydrazones have the formulae , , , , (C6H5)2N-N=CH-CH=C(p-CH3O-C6H5)2 .
25. A process according to claim 1, wherein the material has the structure comprising (a) transparent substrate, (b) recording layer and (c) transparent protective layer.
26. A process according to claim 1, wherein the material has the structure comprising (a) transparent substrate, (b) recording layer, (c) reflective layer and (d) transparent protective layer.
27. A process according to claim 1, wherein the material has the structure comprising (a) substrate, (b) reflective layer, (c) recording layer and (d) transparent protective layer.
28. A process according to claim 1, wherein the laser light has an energy of 0.1 bis 10 nJ/marking (bit).
29. A process according to claim 1, wherein the stored information is read out once or repeatedly by measuring the shift in absorption by the reflection or transmission method using laser light in the NIR range.
30. A process according to claim 29, wherein the stored information is read out at the wavelength used for recording said information.
31. A material for the optical recording and storage of information, comprising at least one layer of a dithioquinacridone as recording material coated on a transparent and dielectric substrate.
32. A material according to claim 31, wherein a layer of an organic hydrazone, with or without a transparent binder, is provided between the recording material and the substrate or on the recording material.
33. A material according to claim 31, wherein the recording material is a homogeneous mixture of a dithioquinacridone and an organic hydrazone.
34. A material according to claim 31, the topmost layer of which is coated with a reflective layer which may be coated with a protective layer.
35. A material containing written information, wherein the recording layer of a recording material comprising a substrate coated with at least one layer of a dithioquinacridone as recording layer contains the written information in the form of bits which have higher absorption in the NIR range than in the unchanged environment and thus have reduced reflectivity and transmission.
36. A material according to claim 35, which has the structure comprising (a) transparent substrate, (b) recording layer and (c) transparent protective layer.
37. A material according to claim 35, which has the structure comprising (a) transparent substrate, (b) recording layer, (c) reflective layer and (d) transparent protective layer.
38. A material according to claim 35, which has the structure comprising (a) substrate, (b) reflective layer, (c) recording layer and (d) transparent protective layer.
39. A material according to any one of claims 35 to 38, wherein the recording layer consists of at least one layer of a dithioquinacridone and at least one layer of an organic hydrazone, or of at least one layer in the form of a homogeneous mixture of a dithioquinacridone and an organic hydrazone.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH3627/91-7 | 1991-12-10 | ||
CH362791 | 1991-12-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA2084858A1 true CA2084858A1 (en) | 1993-06-11 |
Family
ID=4260046
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002084858A Abandoned CA2084858A1 (en) | 1991-12-10 | 1992-12-08 | Process for optically storing information |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0546994A1 (en) |
JP (1) | JPH05270139A (en) |
KR (1) | KR930014329A (en) |
CA (1) | CA2084858A1 (en) |
MX (1) | MX9207130A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US5819287A (en) * | 1996-07-30 | 1998-10-06 | Nec Corporation | Database driven automatic program production system |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0267873B1 (en) * | 1986-11-10 | 1993-02-17 | Ciba-Geigy Ag | Thioquinacridones and isoquinacridones, process to manufacture them and their use |
US5144333A (en) * | 1989-06-09 | 1992-09-01 | Ciba-Geigy Corporation | Process for the storage of information in an organic recording layer |
DE59108177D1 (en) * | 1990-12-12 | 1996-10-17 | Ciba Geigy Ag | Method for storing information with high storage density |
-
1992
- 1992-12-01 EP EP92810934A patent/EP0546994A1/en not_active Withdrawn
- 1992-12-08 CA CA002084858A patent/CA2084858A1/en not_active Abandoned
- 1992-12-08 KR KR1019920023549A patent/KR930014329A/en not_active Application Discontinuation
- 1992-12-09 MX MX9207130A patent/MX9207130A/en unknown
- 1992-12-10 JP JP4352225A patent/JPH05270139A/en active Pending
Also Published As
Publication number | Publication date |
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EP0546994A1 (en) | 1993-06-16 |
JPH05270139A (en) | 1993-10-19 |
KR930014329A (en) | 1993-07-23 |
MX9207130A (en) | 1994-06-30 |
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