CA2038469A1 - Opposed field magnetoresistive memory sensing - Google Patents

Opposed field magnetoresistive memory sensing

Info

Publication number
CA2038469A1
CA2038469A1 CA002038469A CA2038469A CA2038469A1 CA 2038469 A1 CA2038469 A1 CA 2038469A1 CA 002038469 A CA002038469 A CA 002038469A CA 2038469 A CA2038469 A CA 2038469A CA 2038469 A1 CA2038469 A1 CA 2038469A1
Authority
CA
Canada
Prior art keywords
sensing
bit structures
magnetoresistive memory
memory sensing
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002038469A
Other languages
French (fr)
Other versions
CA2038469C (en
Inventor
Allan T. Hurst, Jr.
Arthur V. Pohm
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of CA2038469A1 publication Critical patent/CA2038469A1/en
Application granted granted Critical
Publication of CA2038469C publication Critical patent/CA2038469C/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)

Abstract

A method for sensing magnetic states of magnetic bit structures formed of separated double layer, magnetoresistive, ferromagnetic memory films through providing a word line current in a direction which results in a magnetic field due thereto, in the memory films of these bit structures, that is oriented in a direction opposite a common direction followed at least partially by orientations of edge magnetizations in these films that are parallel to the edges thereof, and sensing a change in electrical resistance of these bit structures as a result of that current.
CA002038469A 1990-04-04 1991-03-18 Opposed field magnetoresistive memory sensing Expired - Lifetime CA2038469C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/504,777 1990-04-04
US07/504,777 US5012444A (en) 1990-04-04 1990-04-04 Opposed field magnetoresistive memory sensing

Publications (2)

Publication Number Publication Date
CA2038469A1 true CA2038469A1 (en) 1991-10-05
CA2038469C CA2038469C (en) 2001-12-18

Family

ID=24007693

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002038469A Expired - Lifetime CA2038469C (en) 1990-04-04 1991-03-18 Opposed field magnetoresistive memory sensing

Country Status (5)

Country Link
US (1) US5012444A (en)
EP (1) EP0450912B1 (en)
JP (1) JP2984948B2 (en)
CA (1) CA2038469C (en)
DE (1) DE69120137T2 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5251170A (en) * 1991-11-04 1993-10-05 Nonvolatile Electronics, Incorporated Offset magnetoresistive memory structures
US5420819A (en) * 1992-09-24 1995-05-30 Nonvolatile Electronics, Incorporated Method for sensing data in a magnetoresistive memory using large fractions of memory cell films for data storage
US5477482A (en) * 1993-10-01 1995-12-19 The United States Of America As Represented By The Secretary Of The Navy Ultra high density, non-volatile ferromagnetic random access memory
US5515314A (en) * 1994-05-27 1996-05-07 Fujitsu Limited Storage device
US5966322A (en) * 1996-09-06 1999-10-12 Nonvolatile Electronics, Incorporated Giant magnetoresistive effect memory cell
JP2000504503A (en) * 1996-12-02 2000-04-11 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Horizontal magnetoelectric device using quasi-two-dimensional electron gas
US5982658A (en) * 1997-10-31 1999-11-09 Honeywell Inc. MRAM design to reduce dissimilar nearest neighbor effects
US6169688B1 (en) 1998-03-23 2001-01-02 Kabushiki Kaisha Toshiba Magnetic storage device using unipole currents for selecting memory cells
JP3650735B2 (en) * 1998-08-12 2005-05-25 インフィネオン テクノロジース アクチエンゲゼルシャフト Magnetoresistive element
DE19853447A1 (en) * 1998-11-19 2000-05-25 Siemens Ag Magnetic storage
US6343032B1 (en) 1999-07-07 2002-01-29 Iowa State University Research Foundation, Inc. Non-volatile spin dependent tunnel junction circuit
US6317359B1 (en) 1999-07-07 2001-11-13 Iowa State University Research Foundation, Inc. Non-volatile magnetic circuit
US6542000B1 (en) 1999-07-30 2003-04-01 Iowa State University Research Foundation, Inc. Nonvolatile programmable logic devices
DE19947118C1 (en) 1999-09-30 2001-03-15 Infineon Technologies Ag Method and circuit arrangement for evaluating the information content of a memory cell
US6693826B1 (en) 2001-07-30 2004-02-17 Iowa State University Research Foundation, Inc. Magnetic memory sensing method and apparatus
US6744651B2 (en) * 2002-09-20 2004-06-01 Taiwan Semiconductor Manufacturing Company Local thermal enhancement of magnetic memory cell during programming
WO2013032434A1 (en) * 2011-08-29 2013-03-07 Intel Corporation Tile-level snapback detection through coupling capacitor in a cross point array

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4780848A (en) * 1986-06-03 1988-10-25 Honeywell Inc. Magnetoresistive memory with multi-layer storage cells having layers of limited thickness
US4731757A (en) * 1986-06-27 1988-03-15 Honeywell Inc. Magnetoresistive memory including thin film storage cells having tapered ends
US4803658A (en) * 1987-01-15 1989-02-07 Westinghouse Electric Corp. Cross tie random access memory
US4829476A (en) * 1987-07-28 1989-05-09 Honeywell Inc. Differential magnetoresistive memory sensing
US4918655A (en) * 1988-02-29 1990-04-17 Honeywell Inc. Magnetic device integrated circuit interconnection system

Also Published As

Publication number Publication date
DE69120137D1 (en) 1996-07-18
EP0450912A3 (en) 1993-08-18
EP0450912B1 (en) 1996-06-12
US5012444A (en) 1991-04-30
DE69120137T2 (en) 1997-01-23
JP2984948B2 (en) 1999-11-29
JPH05101641A (en) 1993-04-23
CA2038469C (en) 2001-12-18
EP0450912A2 (en) 1991-10-09

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