CA2003670A1 - Method and apparatus for microwave transient spectroscopy of deep levels in semiconductors - Google Patents
Method and apparatus for microwave transient spectroscopy of deep levels in semiconductorsInfo
- Publication number
- CA2003670A1 CA2003670A1 CA 2003670 CA2003670A CA2003670A1 CA 2003670 A1 CA2003670 A1 CA 2003670A1 CA 2003670 CA2003670 CA 2003670 CA 2003670 A CA2003670 A CA 2003670A CA 2003670 A1 CA2003670 A1 CA 2003670A1
- Authority
- CA
- Canada
- Prior art keywords
- microwave
- resonator
- sample
- junction
- frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Abstract
ABSTRACT
Method and apparatus for microwave transient spectroscopy of deep levels in semiconductors, in which a sample (14) of the semiconductor material is placed in the field of a micro-wave resonator (13) and terminals of a junction in the sample are excited by a pulse generator (20). The reactive component of the loading impedance caused by the presence of the sample in the field of the resonator (13) causes periodic shifting of the resonance curve of the resonator along the frequency axis.
The resonator (13) is excited by a microwave generator (12) slightly off tuned to the resonance frequency of the resonator so that the microwave energy in the resonator get amplitude modulated by said changes in said reactive compo-nent. A detector (16) senses such changes in amplitude and these changes represent transient properties of deep levels in the sample.
Method and apparatus for microwave transient spectroscopy of deep levels in semiconductors, in which a sample (14) of the semiconductor material is placed in the field of a micro-wave resonator (13) and terminals of a junction in the sample are excited by a pulse generator (20). The reactive component of the loading impedance caused by the presence of the sample in the field of the resonator (13) causes periodic shifting of the resonance curve of the resonator along the frequency axis.
The resonator (13) is excited by a microwave generator (12) slightly off tuned to the resonance frequency of the resonator so that the microwave energy in the resonator get amplitude modulated by said changes in said reactive compo-nent. A detector (16) senses such changes in amplitude and these changes represent transient properties of deep levels in the sample.
Description
Z~ 670 , IMPROVED METHOD AND APPA~ATUS FOR MICROWAVE TRANSIENT
SPECTROSCOPY OF DEEP LEVELS IN SEMIcoNDucToRs The invention relates to an improved method and apparatus for microwave transient spectroscopy of deep levels in semi-conductors.
In the international publication WO 87/05701 a method and :
and apparatus have been described for the examination of electrically active impurities of semiconductor materials or structures, in which a sample taken ~rom the semiconductor to be tested was placed in a microwave field and changes of the microwave absorption were measured which took place in res- -~
10 ponse t~ specified excitation of a Junction provided in the ;
sample. ~ ~ -This method uses the same principles as the well known ~ s~
deep level transient spectroscopy does, however, instead o~
examining the transient capacitance values in response to 15 speci~ied periodic excitation, the changes in the microwave :;
absorption are sensed and measured.
The above referred international publication Comprises a .
detailed comparison between conventional DLTS technique and . '~
: the su~ested microwave absorption measurement technique, which demonstrates that this latter technique has many advan~
tages owing to the substantially higher frequency of the mic- .-rowave field compared to the bridge frequency used in DLTg >`
measurements. ."`~
While the peri~dic measurement of changes in the micro~
25 wave absorption in"the s~mple has pravided a basic step for- ..
ward compared to pre~ious meth~ds, there exiStS a need for increasin~ the sensitivity of the examination of electrically ~ .. -.~.;.~
active impurities. `~
:: The primary object of the invention is to fulfil this . s .
need and to provide a method and an apparatus whereby an increased sensitivity can be rea~hed.
~: It has been found according to the invention that in ~ .; ~.,: .:-.
- , . . ~ ,, ~ ~. ,.; . -~'`' 2Q036'70 -2- .
addition to or more precisely ConComittant with changes in the miCrowave absorption in the sample during the thermal emission procesS that takes place after electrically active ;-defects in the sampled junction have been fllled, changes w1ll take place also ln the reactive component of the micro-wave lmpedance represented hy the sample. Changes in a re- ;
actance in a field o~ a microwave resonator can be mea~ured easily, and the most sensitive way of meaSUring such changes ~ ~
lies in meaSUring the changes in the signal amplitude of a ~- -microwave resonator off-tuned from the excitin~ frequency so that this latter frequency falls to the slope, preferably to a medium range of the slope of the resonance curve of the resonator.
Such amplitude measurement can provide a sensitivity ~:
which is by about two decimal orders of magnitude higher than the one We Can obtain by USing said miCroWaVe absorption technique. ~ ~-The method according to the invention can be used for examinations described in detail in sald international publication, the dlfference lles only in the substantially inoreased sensitivity and the simpler measuring system by which changes in amplitude can be measured. `~ ~' The invention will noW be described in ConneCtion With preferable embodiments thereof~ in which reference will be --2~ made to the acCompanying drawings. In the drawing: ;~
Fig. 1 shows the schematic block diagram of the measuring -~ bridge used for the measurements; `~
Fie. 2 shows the overall block diagram of a meaSUring 3 ~~ system;, Fig. 3 shows the electrical equivalent substitute circuit of a loaded resonator;
- ~ ~ Fig. 4 shows the ~requency versus reflection coefficient curve of a resonator tunea to the exciting frequency;
-Fig. 5 is a curve similar *o Fig. 4, in which the reson~tor is o~-tuned oompared to the excltlng g .3~
2 ~ ~6 ~ 0 . ~
f requency;
Fig. 6 shows the dependence of microwave signal amplitude on reverse bias on the sampled junCtion repre-sented by a diode;
Fig. 7 shows experimentally measured reflexion coef-f icient f or a Si: Se sample; and Fig. 8 shows the Arrhenius plot of the Si:Se sample.
'~';,,, ~
The measuring bridge 1 shown in Fig. 1 compriSeS magiC T :;
10 with a first port coupled through isolator 11 to microwave generator 12 Which iS preferably a Gunn oscillator. A second port of the magic T 10 is connected to a cavity resonator 13 preferably by means of an approprlate coupling means. In the resonator 13 a sample 14 of a semiconductor to be measured is -15 arranged in such a way that the temperature thereof can be , varied and electrical exCiting pulses can be applied to ;~
terminals of a jUnCtion provided on the sample 14. A third port of the magiC T 10 is connected via a second isolator 15 i~
to an amplitude detector 16. A fourth port is connected to a - ;' 20 balance represented by attenuator 17 loaded by a phase shift- ~. r`
ing member 18.
The measuring or impedance bridge 1 of Fig. 1 forms part ;~ -of a meaSuring system shown in Fig. 2. In this SyStem pulse generator 20 iS coupled to the sample 14 in the bridge for 25 periodically providing and terminating a reverse bias on the ; ~`0 - junction in accordance with the actual task of measurement.
The mi~rowave generator 12 is controlled by a ramp generator ;.:
21. The temperature of the sample 14 can be varied by tempe~
rature controller 22. An oscilloscope 23 can be used to show signal wavef orm of the detector 16, pulse generator 20 and ramp genertor 21. An output of the detector 16 is coupled to ;;- ~`
si~nal analyzer 24 which can be connected to a processing ; -.
~- computer 25.
`~ ~ The mlcrowave resonator 13 is loaded by the presence o~
the sample 14. The electrical equivalent substitute circuit ~ o~ such a loaded resonator is shown in Fig. 3. Between ter~
`~ : minals A and B the circuit comprises three main Components ` .' ` ~ ,, ~ .. :, 2(~036~0 i.e. resistance components, inductance L and capacitances.
The periodic excitation of the junction in the sample 14 vary the load of the resonator and in the substitute cireuit this is represented by a varying resistance Rv eonnected in series with fixed resistance Rf. In addition to this effect the sample provides a varying reactance which is represented by varying capacitance Cv connected in parallel with fixed capaeitance Cf. The resonanee frequeney of the resonator is not influenced by changing values of the varying resistance Rv, however, the variation of the capacitance Cv affects this value which follows a square root function.
Fig. 4 shows the frequency versus signal amplitude curve of the resonator 13 tuned to the exeiting frequeney of 10,3 GHz. When the resonator 14 is off-tuned from the exeiting ~- :
frequeney as shown in Fig. 5, the reflexion eoeffieient (whieh is proportional to the signal that ean be obtained from the detector 16) will have a form as shown in Fig. 5.
In response to periodie filling of the sample 14 by means -~
of the pulse generator 20 the reaetive eomponent Cv ~-periodically changes its magnitude which results in that the eurve of Fig. 5 is shifted in parallel to the frequeney axis, ;
henee the signal amplitude follows these ehanges. If the ex~
citing frequeney is adjusted to the medium portion of the steep linear slope of the curve, then the ehanges in deteeted 25 amplitude follow the shifts in the resonanee eurve. In the `~--- ., .,~-;.;-, detector 16 we obtain an amplitude modulation which carries -the information on the transient behavior of the sample 14.
In eonneetion with Figs. 6 to 8 an example will be given whieh indieates the eorrelation of the results of measure- ~d 30 ments earried out by the pr~esent method on a known sample `~
with known properties of this sample. j--In the examplary embodiment a GaAS Sehottky mixer diode "~
was used as deteetor 16. The deteetor signal is amplified by `'i.' a broad-band (50 MHz) preamplifier and the transientS are reeorded by a fast transient reeorder. A eylindrieal miero-wave eavity 13 operating in the TMo11 mode was eonstrueted and the sample 14 was mounted on the temperature eontrollable -~
- , . - - .
~ .
:
2Q~)36~0 (80 K - 450 K) bottom of the cavity. To allow for the neces-sary broad band operation the quality factor of the cavity was set to 1000. (The basic construction of the cavity would allow the realization of Q up to 10.000, but due to the re-quirement of measuring transients down to 50ns timeconstants, we had to reduce the quality factor deliberately.) For the recent experiments a Si p+n junction was used. A
12 /um thick n-type (1.1 o15 cm 3) epilayer was grown on a highly conductive substrate. 1.1 o14 cm 3 Se was doped into the epilayer and 2 /um thick p layer was constructed by ion implantation and additional A1 contacts were evaporated.
To verify the theoretical consideration the first step was to check whether the microwave signal is proportional to the widths of the space charge layer. Experiments as de-scribed in the paper of D. V. Lang in: ~Thermally StimulatedRelaxation Process in Solids~, Topics in Applied Physics (1979, 37, 93, Braunlich ed. Springer) were carried out.
Measurements were performed by varying the reverse bias on -~--the diode and adjusting the filling pulse amplitude in such a manner that flat band conditions were achieved during the pulses. The dependence of the microwave signal amplitude on ., , reverse bias is illustrated on Fig. 6. The curve shows a square-root law dependence on the reverse biases. ;~
In the next step the validity of the equivalent circuitry -model was investigated. The amplitude of the microWave tran~
sient was measured as a function of the microwave signal frequency by tuning the Gunn oscillator by the attached va- ~ -ractor. The resonance frequency of the cavity loaded with the -sample was 10.3033 GHz. The result is seen on Fig. 7. The -èxperimental data fit the theoretical curve very nicely con-firming that the maximum signal strengths is at 5 MHz off resonance. In Fig. 7 the continuous line is the theoretically predicted value for the change in response as shown in Fig. 5 when the changes in Cv was taken into account in the substi-35 tute circuit of Fig. 3. -~
To verify the speed advantage of the microwave detection of the thermal emission over conventional techniques we have 2C~03670 measured thermal emission from the Se level in Si, one of the most accurately studied deep level (as disclosed in H.G.
Grimmeiss, E. Janzen and B. Skarstam, J. Appl. Phys. 1980, 51, 3740). The results are shown on Fig. 8, in which the empty circles show Si:Se level from this reference pub-lication and the full circles represent data from the present tests. The fastest emission rate we measured was 20 MHz roughly four orders of magnitude faster than previously re- i~
ported. There is no limitation to measure slow transients with the microwave system below the range indicated on Fig.
8. From signal to noise level measurement we have established ~ ~' NT/ND=10 6 detection limit for the whole frequency range.
The measured activation energy corresponds to the value reported previously in the Grimmeiss et. al publication, the slight parallel shift observed on Fig. 8 is due to higher capture cross section values measured here than in the refe-renced publication.
From these considerations and from the tests it has been ,~
verified that the detection of the microwave reflection changes caused by the thermal emission of captured carriers from the space charge layer of a semiconductor junction is the most sensitive and fastest way for the detection of thermal emission. Four orders of magnitude advantage in -~
measuring thermal emission rates have been demonstrated while ; -high sensitivity has been maintained.
~' .. ,,.. , ~,.
.:: .~ ,.:
".,~i"~i '` . ~ ' ~ ~ '.`
'
SPECTROSCOPY OF DEEP LEVELS IN SEMIcoNDucToRs The invention relates to an improved method and apparatus for microwave transient spectroscopy of deep levels in semi-conductors.
In the international publication WO 87/05701 a method and :
and apparatus have been described for the examination of electrically active impurities of semiconductor materials or structures, in which a sample taken ~rom the semiconductor to be tested was placed in a microwave field and changes of the microwave absorption were measured which took place in res- -~
10 ponse t~ specified excitation of a Junction provided in the ;
sample. ~ ~ -This method uses the same principles as the well known ~ s~
deep level transient spectroscopy does, however, instead o~
examining the transient capacitance values in response to 15 speci~ied periodic excitation, the changes in the microwave :;
absorption are sensed and measured.
The above referred international publication Comprises a .
detailed comparison between conventional DLTS technique and . '~
: the su~ested microwave absorption measurement technique, which demonstrates that this latter technique has many advan~
tages owing to the substantially higher frequency of the mic- .-rowave field compared to the bridge frequency used in DLTg >`
measurements. ."`~
While the peri~dic measurement of changes in the micro~
25 wave absorption in"the s~mple has pravided a basic step for- ..
ward compared to pre~ious meth~ds, there exiStS a need for increasin~ the sensitivity of the examination of electrically ~ .. -.~.;.~
active impurities. `~
:: The primary object of the invention is to fulfil this . s .
need and to provide a method and an apparatus whereby an increased sensitivity can be rea~hed.
~: It has been found according to the invention that in ~ .; ~.,: .:-.
- , . . ~ ,, ~ ~. ,.; . -~'`' 2Q036'70 -2- .
addition to or more precisely ConComittant with changes in the miCrowave absorption in the sample during the thermal emission procesS that takes place after electrically active ;-defects in the sampled junction have been fllled, changes w1ll take place also ln the reactive component of the micro-wave lmpedance represented hy the sample. Changes in a re- ;
actance in a field o~ a microwave resonator can be mea~ured easily, and the most sensitive way of meaSUring such changes ~ ~
lies in meaSUring the changes in the signal amplitude of a ~- -microwave resonator off-tuned from the excitin~ frequency so that this latter frequency falls to the slope, preferably to a medium range of the slope of the resonance curve of the resonator.
Such amplitude measurement can provide a sensitivity ~:
which is by about two decimal orders of magnitude higher than the one We Can obtain by USing said miCroWaVe absorption technique. ~ ~-The method according to the invention can be used for examinations described in detail in sald international publication, the dlfference lles only in the substantially inoreased sensitivity and the simpler measuring system by which changes in amplitude can be measured. `~ ~' The invention will noW be described in ConneCtion With preferable embodiments thereof~ in which reference will be --2~ made to the acCompanying drawings. In the drawing: ;~
Fig. 1 shows the schematic block diagram of the measuring -~ bridge used for the measurements; `~
Fie. 2 shows the overall block diagram of a meaSUring 3 ~~ system;, Fig. 3 shows the electrical equivalent substitute circuit of a loaded resonator;
- ~ ~ Fig. 4 shows the ~requency versus reflection coefficient curve of a resonator tunea to the exciting frequency;
-Fig. 5 is a curve similar *o Fig. 4, in which the reson~tor is o~-tuned oompared to the excltlng g .3~
2 ~ ~6 ~ 0 . ~
f requency;
Fig. 6 shows the dependence of microwave signal amplitude on reverse bias on the sampled junCtion repre-sented by a diode;
Fig. 7 shows experimentally measured reflexion coef-f icient f or a Si: Se sample; and Fig. 8 shows the Arrhenius plot of the Si:Se sample.
'~';,,, ~
The measuring bridge 1 shown in Fig. 1 compriSeS magiC T :;
10 with a first port coupled through isolator 11 to microwave generator 12 Which iS preferably a Gunn oscillator. A second port of the magic T 10 is connected to a cavity resonator 13 preferably by means of an approprlate coupling means. In the resonator 13 a sample 14 of a semiconductor to be measured is -15 arranged in such a way that the temperature thereof can be , varied and electrical exCiting pulses can be applied to ;~
terminals of a jUnCtion provided on the sample 14. A third port of the magiC T 10 is connected via a second isolator 15 i~
to an amplitude detector 16. A fourth port is connected to a - ;' 20 balance represented by attenuator 17 loaded by a phase shift- ~. r`
ing member 18.
The measuring or impedance bridge 1 of Fig. 1 forms part ;~ -of a meaSuring system shown in Fig. 2. In this SyStem pulse generator 20 iS coupled to the sample 14 in the bridge for 25 periodically providing and terminating a reverse bias on the ; ~`0 - junction in accordance with the actual task of measurement.
The mi~rowave generator 12 is controlled by a ramp generator ;.:
21. The temperature of the sample 14 can be varied by tempe~
rature controller 22. An oscilloscope 23 can be used to show signal wavef orm of the detector 16, pulse generator 20 and ramp genertor 21. An output of the detector 16 is coupled to ;;- ~`
si~nal analyzer 24 which can be connected to a processing ; -.
~- computer 25.
`~ ~ The mlcrowave resonator 13 is loaded by the presence o~
the sample 14. The electrical equivalent substitute circuit ~ o~ such a loaded resonator is shown in Fig. 3. Between ter~
`~ : minals A and B the circuit comprises three main Components ` .' ` ~ ,, ~ .. :, 2(~036~0 i.e. resistance components, inductance L and capacitances.
The periodic excitation of the junction in the sample 14 vary the load of the resonator and in the substitute cireuit this is represented by a varying resistance Rv eonnected in series with fixed resistance Rf. In addition to this effect the sample provides a varying reactance which is represented by varying capacitance Cv connected in parallel with fixed capaeitance Cf. The resonanee frequeney of the resonator is not influenced by changing values of the varying resistance Rv, however, the variation of the capacitance Cv affects this value which follows a square root function.
Fig. 4 shows the frequency versus signal amplitude curve of the resonator 13 tuned to the exeiting frequeney of 10,3 GHz. When the resonator 14 is off-tuned from the exeiting ~- :
frequeney as shown in Fig. 5, the reflexion eoeffieient (whieh is proportional to the signal that ean be obtained from the detector 16) will have a form as shown in Fig. 5.
In response to periodie filling of the sample 14 by means -~
of the pulse generator 20 the reaetive eomponent Cv ~-periodically changes its magnitude which results in that the eurve of Fig. 5 is shifted in parallel to the frequeney axis, ;
henee the signal amplitude follows these ehanges. If the ex~
citing frequeney is adjusted to the medium portion of the steep linear slope of the curve, then the ehanges in deteeted 25 amplitude follow the shifts in the resonanee eurve. In the `~--- ., .,~-;.;-, detector 16 we obtain an amplitude modulation which carries -the information on the transient behavior of the sample 14.
In eonneetion with Figs. 6 to 8 an example will be given whieh indieates the eorrelation of the results of measure- ~d 30 ments earried out by the pr~esent method on a known sample `~
with known properties of this sample. j--In the examplary embodiment a GaAS Sehottky mixer diode "~
was used as deteetor 16. The deteetor signal is amplified by `'i.' a broad-band (50 MHz) preamplifier and the transientS are reeorded by a fast transient reeorder. A eylindrieal miero-wave eavity 13 operating in the TMo11 mode was eonstrueted and the sample 14 was mounted on the temperature eontrollable -~
- , . - - .
~ .
:
2Q~)36~0 (80 K - 450 K) bottom of the cavity. To allow for the neces-sary broad band operation the quality factor of the cavity was set to 1000. (The basic construction of the cavity would allow the realization of Q up to 10.000, but due to the re-quirement of measuring transients down to 50ns timeconstants, we had to reduce the quality factor deliberately.) For the recent experiments a Si p+n junction was used. A
12 /um thick n-type (1.1 o15 cm 3) epilayer was grown on a highly conductive substrate. 1.1 o14 cm 3 Se was doped into the epilayer and 2 /um thick p layer was constructed by ion implantation and additional A1 contacts were evaporated.
To verify the theoretical consideration the first step was to check whether the microwave signal is proportional to the widths of the space charge layer. Experiments as de-scribed in the paper of D. V. Lang in: ~Thermally StimulatedRelaxation Process in Solids~, Topics in Applied Physics (1979, 37, 93, Braunlich ed. Springer) were carried out.
Measurements were performed by varying the reverse bias on -~--the diode and adjusting the filling pulse amplitude in such a manner that flat band conditions were achieved during the pulses. The dependence of the microwave signal amplitude on ., , reverse bias is illustrated on Fig. 6. The curve shows a square-root law dependence on the reverse biases. ;~
In the next step the validity of the equivalent circuitry -model was investigated. The amplitude of the microWave tran~
sient was measured as a function of the microwave signal frequency by tuning the Gunn oscillator by the attached va- ~ -ractor. The resonance frequency of the cavity loaded with the -sample was 10.3033 GHz. The result is seen on Fig. 7. The -èxperimental data fit the theoretical curve very nicely con-firming that the maximum signal strengths is at 5 MHz off resonance. In Fig. 7 the continuous line is the theoretically predicted value for the change in response as shown in Fig. 5 when the changes in Cv was taken into account in the substi-35 tute circuit of Fig. 3. -~
To verify the speed advantage of the microwave detection of the thermal emission over conventional techniques we have 2C~03670 measured thermal emission from the Se level in Si, one of the most accurately studied deep level (as disclosed in H.G.
Grimmeiss, E. Janzen and B. Skarstam, J. Appl. Phys. 1980, 51, 3740). The results are shown on Fig. 8, in which the empty circles show Si:Se level from this reference pub-lication and the full circles represent data from the present tests. The fastest emission rate we measured was 20 MHz roughly four orders of magnitude faster than previously re- i~
ported. There is no limitation to measure slow transients with the microwave system below the range indicated on Fig.
8. From signal to noise level measurement we have established ~ ~' NT/ND=10 6 detection limit for the whole frequency range.
The measured activation energy corresponds to the value reported previously in the Grimmeiss et. al publication, the slight parallel shift observed on Fig. 8 is due to higher capture cross section values measured here than in the refe-renced publication.
From these considerations and from the tests it has been ,~
verified that the detection of the microwave reflection changes caused by the thermal emission of captured carriers from the space charge layer of a semiconductor junction is the most sensitive and fastest way for the detection of thermal emission. Four orders of magnitude advantage in -~
measuring thermal emission rates have been demonstrated while ; -high sensitivity has been maintained.
~' .. ,,.. , ~,.
.:: .~ ,.:
".,~i"~i '` . ~ ' ~ ~ '.`
'
Claims (2)
1. A method for the examination of electrically active impurities in a semiconductor material with electrically active defects, having a junction capable of forming a space charge layer under reverse bias in a sample material thereof, said junction being provided with a pair of contacts for biasing, comprising the steps of:
(a) providing a space charge layer in said junction by reverse biasing said junction through biasing means coupled to said contacts;
(b) filling the electrically active defects in said junc-tion;
(c) detecting a thermal emission process, said thermal emission process progressing towards a thermal equi-librum state that takes place following said filling step, wherein said sample material is incorporating said junction is inserted in a microwave field from a microwave resonator having a resonance curve and being excited by a microwave signal of a microwave source at least during said detection step, said source having a predetermined frequency;
(d) periodically repeating said filling step;
characterized by the steps of:
(e) in said detection step sensing the microwave ampli-tude on said resonator that takes place due to changes in reactive component of said sample during said thermal emission process, wherein said microwave resonator being off-tuned from said frequency so that said frequency falls to a slope of the resonance curve of said resonator.
(a) providing a space charge layer in said junction by reverse biasing said junction through biasing means coupled to said contacts;
(b) filling the electrically active defects in said junc-tion;
(c) detecting a thermal emission process, said thermal emission process progressing towards a thermal equi-librum state that takes place following said filling step, wherein said sample material is incorporating said junction is inserted in a microwave field from a microwave resonator having a resonance curve and being excited by a microwave signal of a microwave source at least during said detection step, said source having a predetermined frequency;
(d) periodically repeating said filling step;
characterized by the steps of:
(e) in said detection step sensing the microwave ampli-tude on said resonator that takes place due to changes in reactive component of said sample during said thermal emission process, wherein said microwave resonator being off-tuned from said frequency so that said frequency falls to a slope of the resonance curve of said resonator.
2. Apparatus for microwave transient spectroscopy of deep levels in semiconductors, comprising a microwave resonator (13) having a resonance frequency, a microwave generator (12) exciting said resonator with a microwave signal, a sample (14) of the semicondutor to be examined, said sample compris-ing a junction provided with terminals, a pulse generator (20) coupled to said terminals, and detection means sensing the response of said sample to pulses of said pulse genera-tor, characterized in that the frequency of said microwave signal of said generator (12) slightly differs from said re-sonance frequency so that the excitation signal falls on side slope of the resonance curve of said resonator (13), and said detector (16) sensing amplitude modulation of microwave ener-gy in said resonator (13) in response to changes in reactive component (Cv) of said junction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA 2003670 CA2003670A1 (en) | 1989-11-23 | 1989-11-23 | Method and apparatus for microwave transient spectroscopy of deep levels in semiconductors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA 2003670 CA2003670A1 (en) | 1989-11-23 | 1989-11-23 | Method and apparatus for microwave transient spectroscopy of deep levels in semiconductors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2003670A1 true CA2003670A1 (en) | 1991-05-23 |
Family
ID=4143617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA 2003670 Abandoned CA2003670A1 (en) | 1989-11-23 | 1989-11-23 | Method and apparatus for microwave transient spectroscopy of deep levels in semiconductors |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA2003670A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111678961A (en) * | 2020-06-10 | 2020-09-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | Defect identification method for semiconductor laser |
-
1989
- 1989-11-23 CA CA 2003670 patent/CA2003670A1/en not_active Abandoned
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111678961A (en) * | 2020-06-10 | 2020-09-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | Defect identification method for semiconductor laser |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0260321B1 (en) | Method for the examination of electrically active impurities of semiconductor materials or structures and measuring arrangement for carrying out the method | |
| US5495170A (en) | Time varying electrical conductivity tester using frequency discrimination and power detector and methods thereof | |
| US7768262B2 (en) | Continuous wave nuclear quadrupole resonance spectrometer | |
| CN109061295B (en) | Near-field microwave resonator resonant frequency measurement system and method | |
| US7001785B1 (en) | Capacitance probe for thin dielectric film characterization | |
| Howells et al. | Transient terahertz reflection spectroscopy of undoped InSb from 0.1 to 1.1 THz | |
| EP0827192A2 (en) | Method of measuring carrier concentration of semiconductor, process of manufacturing semiconductor device and semiconductor wafer | |
| Li et al. | Complete thermal characterization of film-on-substrate system by modulated thermoreflectance microscopy and multiparameter fitting | |
| Ye et al. | Cavity ringdown heterodyne spectroscopy: High sensitivity with microwatt light power | |
| US6369603B1 (en) | Radio frequency coupling apparatus and method for measuring minority carrier lifetimes in semiconductor materials | |
| US6879167B2 (en) | Noncontact measuring system for electrical conductivity | |
| CN109470397B (en) | Pressure measurement based on electromagnetic signal output of cavity | |
| Gaubas et al. | Determination of recombination parameters in silicon wafers by transient microwave absorption | |
| Jamison et al. | Fast transient spectroscopy of the free‐carrier plasma edge in Ge | |
| US4208624A (en) | Method and apparatus for investigating dielectric semiconductor materials | |
| Xiang et al. | Use of a helical resonator as a capacitive transducer in vibrating reed measurements | |
| CA2003670A1 (en) | Method and apparatus for microwave transient spectroscopy of deep levels in semiconductors | |
| CN108254071A (en) | A kind of direct detecting system of highly sensitive Terahertz of room temperature | |
| WO1990005908A1 (en) | Improved method and apparatus for microwave transient spectroscopy of deep levels in semiconductors | |
| AU776539B2 (en) | Improved apparatus and method for measuring minority carrier lifetimes in semiconductor materials | |
| Auriac et al. | Near-field millimetre wave vector microscopy-Buried structure imaging | |
| WO2000004375A1 (en) | Microwave measuring instrument and methods of measuring with microwaves | |
| Sato et al. | Electrically detected magnetic resonance signal intensity at resonant frequencies from 300 to 900 MHz in a constant microwave field | |
| JP2019095233A (en) | Scanning microwave microscope and method of measuring electrical properties of surface of measured object using the same | |
| Maekawa et al. | Contactless measurement of photoinduced carrier lifetime and injection level in silicon wafer using additional eddy current |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Dead |