CA1326966C - Semiconducting metal silicide radiation detectors - Google Patents
Semiconducting metal silicide radiation detectorsInfo
- Publication number
- CA1326966C CA1326966C CA000613820A CA613820A CA1326966C CA 1326966 C CA1326966 C CA 1326966C CA 000613820 A CA000613820 A CA 000613820A CA 613820 A CA613820 A CA 613820A CA 1326966 C CA1326966 C CA 1326966C
- Authority
- CA
- Canada
- Prior art keywords
- semiconducting
- resi2
- electrically conductive
- infrared radiation
- measuring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 64
- 229910052751 metal Inorganic materials 0.000 title abstract description 49
- 239000002184 metal Substances 0.000 title abstract description 49
- 229910021332 silicide Inorganic materials 0.000 title abstract description 42
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title abstract description 40
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 48
- 239000010703 silicon Substances 0.000 claims abstract description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 239000010409 thin film Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims description 44
- 230000008859 change Effects 0.000 claims description 17
- 239000010408 film Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 239000002019 doping agent Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 3
- 229910019597 ReSi2 Inorganic materials 0.000 claims 48
- 229910052702 rhenium Inorganic materials 0.000 abstract description 21
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 abstract description 21
- 230000005670 electromagnetic radiation Effects 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 239000013307 optical fiber Substances 0.000 abstract description 7
- 230000005540 biological transmission Effects 0.000 abstract description 6
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000000835 fiber Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910000676 Si alloy Inorganic materials 0.000 description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 229910021346 calcium silicide Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910021358 chromium disilicide Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- JRACIMOSEUMYIP-UHFFFAOYSA-N bis($l^{2}-silanylidene)iron Chemical compound [Si]=[Fe]=[Si] JRACIMOSEUMYIP-UHFFFAOYSA-N 0.000 description 1
- FHTCLMVMBMJAEE-UHFFFAOYSA-N bis($l^{2}-silanylidene)manganese Chemical compound [Si]=[Mn]=[Si] FHTCLMVMBMJAEE-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- YTHCQFKNFVSQBC-UHFFFAOYSA-N magnesium silicide Chemical compound [Mg]=[Si]=[Mg] YTHCQFKNFVSQBC-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000002674 ointment Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4246—Bidirectionally operating package structures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4249—Packages, e.g. shape, construction, internal or external details comprising arrays of active devices and fibres
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
Abstract
SEMICONDUCTIVE METAL SILICIDE RADIATION DETECTORS
AND SOURCE
ABSTRACT
Semiconducting metal silicide electromagnetic radiation detectors have a thin film of semiconducting metal silicide, such as rhenium disilicide, grown or deposited on a silicon wafer.
The detectors are intrinsic semiconductor detectors and can be formed either as discrete devices, or monolithically on a silicon chip to provide an integrated detector or detector array. The semiconducting rhenium disilicide detectors are efficient at wavelengths which mate with the transmission capabilities of certain optical fibers, thereby enhancing the combination of infrared detectors and optical fiber transmission previously known. The range of electromagnetic radiation sensed by these rhenium disilicide detectors include the infrared range of wavelengths up to 14 microns.
AND SOURCE
ABSTRACT
Semiconducting metal silicide electromagnetic radiation detectors have a thin film of semiconducting metal silicide, such as rhenium disilicide, grown or deposited on a silicon wafer.
The detectors are intrinsic semiconductor detectors and can be formed either as discrete devices, or monolithically on a silicon chip to provide an integrated detector or detector array. The semiconducting rhenium disilicide detectors are efficient at wavelengths which mate with the transmission capabilities of certain optical fibers, thereby enhancing the combination of infrared detectors and optical fiber transmission previously known. The range of electromagnetic radiation sensed by these rhenium disilicide detectors include the infrared range of wavelengths up to 14 microns.
Description
SEI~ICONDUCTIVE METI I. SILICIDI~ RADIATION DETECTORS
AND SOIJRCE
FIELD OF TIIE INVENTION
The present invention relates to an electromagnetic radiation detector made from rhenium disilicide grown or deposited on a silicon wafer or other suitable substrate. Rhenium disil~cide ~ReSi2), is an effective inSrinsic electromagnetic radiation detector. A combination of 1~ electromagnetic radiation detector and source with electronics can be ~abricated on a single chip o~ an integrated circuit having both electronic data processing and memory and electromagnetic radiation information receiving, processing or transmitting capability. The present invenSion is the first to fabricaSe, and demonstrate the semiconducting nature of, a thin film of rhenium disilicide which is effective in the infrared region.
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" rRo~3LEM .
20It is a problem to fabricate infrared detectors ;s that are efficient and can be integrated ' ~
AND SOIJRCE
FIELD OF TIIE INVENTION
The present invention relates to an electromagnetic radiation detector made from rhenium disilicide grown or deposited on a silicon wafer or other suitable substrate. Rhenium disil~cide ~ReSi2), is an effective inSrinsic electromagnetic radiation detector. A combination of 1~ electromagnetic radiation detector and source with electronics can be ~abricated on a single chip o~ an integrated circuit having both electronic data processing and memory and electromagnetic radiation information receiving, processing or transmitting capability. The present invenSion is the first to fabricaSe, and demonstrate the semiconducting nature of, a thin film of rhenium disilicide which is effective in the infrared region.
.
" rRo~3LEM .
20It is a problem to fabricate infrared detectors ;s that are efficient and can be integrated ' ~
-2- 1326~66 monolithically with other circuitry. Practical devices currently available include intrinsic infrared semiconductor detectors as discrete devices or linked to elèctronic circuitry in some form other than on a single silicon chip. Schottky barrier infrared detectors are also available and workable but are slow for communication purposes and have relatively low quantum efficiency. The Schottky barrier devices are of limited wavelength range, but they have been integrated successfully in focal plane arrays on a silicon chip.
Silicon intrinsic detectors are effective for visible light and perhaps can be extended in time to wavelengths up to about o.9 microns. Extrinsic silicon detectors are sensitive to much longer wavelengths, but have absorption coef~icients of 1000 to 10,000 times lower than those of intrinsic detectors.
Germanium and germanium-silicon alloys can be grown on a silicon wafer. The absolute long-wavelength limit for germanium based alloys is one micron and value of about 1.9 microns with virtually pure germanium. However, germanium and germanium-silicon alloys are relatively weak absorbers of infrared radiation. Special structures, such as wave guides, must be developed to use both germanium and germanium-silicon alloys as thin films. The wave guides and other structures are necessary becaùse such devices are weak absorbers of infrared radiation.
There is also available a family of Mercury-Cadmium-Tellerium devices for infrared detection.
These devices operate without being able to be combined, to date, with an effective microelectronics technology as is possible with silicon based devices.
The devices described above have been effective to some extent. ~lowever, there still remains a need for detectors meeting all of the following characteristics: (1) The efficiency oP an intrinsic semiconductor detector; (2) Efficient operation in the 1.0 to 14 micron wavelength range;
and, (3) Practical fabrication on a silicon chip in a monolithic structure. The need for such devices has been recognized by persons skilled in this art and some attempts have been made recently to fabricate such a device usinq gallium arsenide (GaAs) and related compounds on a silicon substrate.
However, these materials are not currently compatible with silicon processing.
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132696`6 SO~TION
These problems are solved and a technical advance achieved in the field b~ rhenium disilicide infrared detector devices which are capable of (1) exhibiting decreased electrical resistance or (2) generating a photocurrent or photovoltage when exposed to e1ectromagnetic radiation.
There are numerous applications for infrared ~ detectors, one of which is for terrèstrial imaging 10 ~ from~space.~ The limited wavelengths which can be ~ .... . . ... . . .
transmitted through the atmosphere are approximately 1.5 to 1.9: 2.0 to 2.6; 3.4 to 4.2; 4.5 to 5.0 and 8 to 13 microns. N~SA has shown an interest in the 2.5 to 30 micron wavelength range. Another application for the present invention is in combination with fiber optic systems using silica based fibers ~which in long haul, high capacity systems have narrow spectral windows centered on about 1.3 and 1.55 microns). ~ short haul system has an additional spectral window ~rom about 0.8 to , 0.9 microns as well as the windows at about 1.3 and 1.55 microns. In such applications, the output of the infrared sources can be fed directly to the fiber optics for transmission to an infrared detector and an associated processor. Since the present rhenium disilicide devices are silicon-compatible, they can be combined on the same chip as other silicon based elements such as data storage and data processing elements. In such a ; 30 combination, the signal processing and related computing can be performed on the very same chip that holds the source, detector, imaging or detector array. Monolithic systems afford many advantages compared to hybrid systems.
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: ' , ~326966 The detectors can be arranged singly or in an array. A two dimensional array can be constructed.
Each element in the array has an output which can be converted into a digital electrical signal.
The rhenium disilicide infrared detector device consists of a layer of semiconducting ReSi2 deposited or grown on a su~strate. Ohmic contacts are attached to the semiconducting ReSi2 for use with a detector circuit to measure a change in resistance of the semiconducting ReSi2 indicative of the presence of infrared radiation of less than 14 microns in wavelength. In a preferred embodiment the semiconducting ReSi2 is deposited in the form of a thin film on a silicon substrate and being doped with a dopant the same as the silicon substrate.
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BRIEF DESCRIPTION OF l~IE DI~WINGS
Figùre l shows a perspective view of one embodiment of the present invention showing a semiconducting metal silicide infrared radiation detector.
Figure 2 illustrates a circuit that uses the semiconductive metal silicide infrared radiation detector of Figure 1.
Figure 3 shows an array of device~ shown in Figure 1 forming another embodiment of the present invention.
Figure 4 shows an array of devices, as shown in Figure 3, formed on a common silicon substrate with a very large scale integrated circuit forming another embodiment of the present invention.
Figure 5 shows an array of semiconducting metal silicide infrared detectors arranged in an array to mate with a bundle of optical fibers forming still another embodiment of the present invention.
Figure 6 is a perspective view of another embodiment of the present invention showing the semiconducting metal silicide layer directly on the silicon substrate.
Figure 7 shows an array of semiconducting metal silicide infrared detectors arranged to mate with an array of optical fibers forming still another embodiment of the present invention.
Figure 8 shows a perspective view of a samiconducting metal homo~unction radiation source and detector forming another embodiment of the present invention.
Figure 9 is a perspective view of a semiconducting metal heterojunction ~nfrared radiation detector forming another embodiment of the :. " 7 ,~' ,:: :::, . ' ... , :
. ~7~ 1326966 present invention.
Figure lo is a chart showing the optical absorptlon coefflclent of the present semlconductlng metal sllicide infrared radiation detector.
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13~6966 DESCRIPTION OF T~IE INVENTION
Figure 1 shows a perspective view of one embodiment of the present invention being formed of a semiconducting metal silicide shown generally by the numeral 10. The substrate 12 is a silicon wafer thermally oxidized to grow 1000 angstroms more or less of insulating oxide 14. The oxide layer 14 is then coated with several thousand angstroms of polycrystalline silicon film 16. This polycrystalline silicon film 16 is added commonly by low pressure vapor deposition. ~ thin film of metal, rhenium, is then added to the polycrystalline silicon film 16 and then reacted by heating the sample in an inert environment to react the metal film with the polycrystalline silicon film 16 to form a semiconducting metal silicide 18, rhenium disilicide (ReSi2). Electrical contact with the semiconducting metal silicide 18 is achieved by depositing an aluminum or other conductive film 20, 22 and 24 on the semiçonducting metal silicide 18 which is then photolithographically patterned.
Other insulating substrates can be used and coated with a silicon film. The metal deposition technique can be evaporation or chemical vapor deposition. Futhermore, the metal silicide film may be formed by (simultaneous) codeposition of metal and silicon.
Figure 6 shows a another embodiment of the semiconductive metal silicide detector having a 6ubstrate 120 on top of which is formed a thin film o~ semiconducting rhenium disilicide 180.
Conductive pads 121, 122 and 140 are formed on the sur~ace of the semiconductive metal silicide thin film 180.
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9- 13~6966 The metal can be chosen from the group consisting of: iron, iridium, manganese, chromium, rhenium, magnesium, calcium, barium or osmium. The semiconducting metal silicides formed are: iron disilicide (FeSi2), iridium silicide (IrSil 75), manganese silicide (MnSi1 7), chromium disilicide (CrSi2), rhenium disilicide (ReSi2), magnesium silicide (Mg2Si), barium disilicide ~8aSi2~, calcium silicide (Ca2Si) or osmium disilicide (OsSi2) respectively.
The process for forming each semiconducting metal silicide varies as to annealing temperature and time. The chart 1 shown below shows some combinations of time, temperature and a range of thickness for the semiconducting metal silicides.
Each semiconducting metal silicide thus made has been tested and shown to be a true semiconductor which demonstrates useful radiation detection properties based either on analysis of the data showing the optical absorption edge for each material together with measurements of electrical resistivity as a function of temperature.
Element Temp.~Time (minutes) Thickness(Angstroms) Chromium 900 C/120-1100 C/120 1000 - 13,000 Manganese 800 C/120-1000 C/60 1900 - 15,000 Iridium 750 C/120-850 C/120 1355 - 5,418 Rhenium 90o C/120307 - 768 Iron 900 C/120 700 - 3,200 . . .
The active silicide layer can be made by depositing a thin film of the desired metal onto a silicon wafer which has been polished and cleaned for integrated circuit fabrication. It is important to have a clean metal-silicon interface before annealing. A~ter heating to the proper temperature ' ' : . ,,, -. . .
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-lo- 1 3269 66 and for the proper time, the metal film will react with the silicon substrate to form semiconducting metal silicide. The semiconducting metal silicide film may also be grown on a polycrystalline silicon surface.
For example, rhenium disilicide ~ReSi2) was prepared by ion beam sputtering of rhenium film onto 1-0-0 polished silicon wafers. The semiconducting metal silicide layer was grown by reaction of the rhenium metal film with the silicon substrate at an elevated temperature such as 900 degrees C in an inert environment of flowing argon gas. The substrate is ion-milled in vacuum immediately prior to metal deposition.
Figure 2 illustrates a circuit that uses the semiconductive rhenium disilicide detector of Figure 1. The conductive pads 20, 22 formed on the semiconducting rhenium silicide layer shown in Figure 1 are connected by wires 21, 23 to a constant current source 50. Conductive pads 24 of Figure 1 are connected by wires 25, 27 to a voltmeter 60. A
source of infrared radiation 70 illuminates semiconducting metal silicide infrared detector device 10. The resistance of the semiconducting metal silicide infrared detector device 10 drops as it is exposed to infrared radiation so that the voltage measured by voltmeter 60 drops as a function of the intensity of infrared radiation from infrared radiation source 70. An analog-to-digital converter 62 i8 shown receiving information from voltmeter 60 ; for digitizing t~e output of the semiconducting metal silicide infrared detector 10. ~lternatively, a change in current in the presence of a constant voltage across the detector device 10 can be , ., ~ . , i --: .: :' ' : ., ... i ~ , :
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-11- 132~36~
measured to determine the change in resistance of device 10.
Figure 3 shows an array of infrared detector devices of the type shown in Figure 1. The array shown generally by the number 300 is formed of semiconducting metal silicide infrared detector devices 302. Each infrared detector device 302 has leads 304 into which a constant current can be fed from a current source (not shown). Each infrared detector device 302 also has leads 306 from which the voltage drop across the infrared detector device can be measured or detected. The array 300 is grown on a substrate 308 which can be formed of a wide variety of materials including silicon. If silicon is the chosen substrate, the entire array can be formed monolithically. In that case, the leads 304, 306 would be formed on the substrate 308 phot~lt~ graph~ by techniques well known in the semiconductor fabricating industry.
Figure 4 shows an integrated circuit 101 formed of microprocessor circuitry 100 (or other VLSI
device) and a semiconducting metal silicide infrared detector array 110 shown for the purposes of illustration only as a separate element. One use of such a device is incoming missile detection and ranging. Currently, such combinations of infrared detection and computer analy~is of the incoming signals are performed by interconnecting discrete devices or by using monolithic arrays of Schottky barrier detectors. The discrete devices each perform satisfactorily but are not as fast, compact, low cost to make, or reliable as a single integrat~d device. The Schottky barrier detectors have a low guantum efficiency and are relatively slow devices.
' '' .'., :
' ~ . ' ' The potential speed difference is substantial, p~rhaps loo times that of present devices.
Intrinsic semiconductor detectors have a higher quantum efficiency than Schottky barrier detectors.
The quality of the electrical interconnects is an important factor in the speed of the device.
Similarly, the integrated system is more rugged, faster and more reliable than a hybrid system formed of discrete devices. The net result is that such devices could be hand held or easily portable. The increased speed of data processing, the ruggedness and reliability can be critical in military and space use.
Figure 4 shows the array as a two dimensional array of semiconducting metal silicide detectors 12 whose output is represented by the bundle of leads 112 which contain data fed to microprocessor circuitry lO0. Microprocessor circuitry 100 fabricated on substrate 106 receives power through 20 leads 102 and transmit~ information via leads 104.
Additional data and control information may be placed into the microprocessor by leads 108. The entire integrated circuit 105 is fabricated on a substrate 106 typically of silicon.
Figure 5 shows a bundle of optical fibers 200 which are aligned with and receive signals from a mated array 210 of semiconducting metal silicide sources 12. The direction of transmission can be reversed so that the fiber optic bundle 200 transmit radiation to an array of semiconducting metal silicide detectors 12. While the sources can in some cases operate as detectors, in practice devices are optimized for each application as either sources or detectors.
Figure 7 shows a linear array 309 of semiconducting metal silicide detectors 313, 311 and 303 having leads 305 and 307 for receiving current and for connecting to instruments for measuring changed resistance, photocurrent or photovoltage.
The linear array 309 is mated with a matching array of optical fibers 325 having, for example, three fibers 203, 211 and 213 which align with corresponding elements 303, 311 and 313 as shown in the figure.
Figure 8 shows in detail a substrate 401 which can be formed of either p- or n- type silicon and has two layers of either n or p type doped semiconducting metal silicide 402 and 404 formed thereon. The upper and lower semiconducting metal silicide layers must be oppositely doped material and the substrate 401 can be opposite in doping to the semiconducting metal silicide layer adjacent to it as shown in Figure 8. Part of the upper semiconducting metal silicide layer 406 is removed to expose the surface 410 of the lower semiconducting metal silicide layer 402. Conductive contacts 40~ are formed on both surfaces 406 and 410 for permitting electrical connection to the device. Current is injected at lead 413 and rcmoved at lead 415 or vice versa for operation as a source,' of electromagnetic radiation. When exposed to electromagnetic radiation, the device may gcnerate a photocurrent "i" or alternatively a photovoltage between leads 413 and 415. Voltage/current sensor circuit 420 is connected to leads 413, 415 to detect the photovoltage/photocurrent and changes therein due to the applied infrared radiation.
Figure 9 shows another embodiment in the form . ... . .
' - : . -of a heterojunction device 500 having a silicon substrate 501 and a semiconducting metal silicide thin film 502. Conductive contacts 514 and 506 are formed on the bottom of the substrate and the top of the semiconducting metal silicide thin film, respectively. Current is injected at lead 512 and removed at lead 510 or vice versa for operation of heterojunction device 500 as a source of electromagnetic radiation. When exposed to electromagnetic radiation, the heterojunction device 500 may generate a photocurrent "i" or alternatively a photovoltage between leads 510 and 512.
Voltage/current sensor circuit 520 is connected to 1 e a d s 5 1 0 , 5 1 2 t o d e t e c t t h e photovoltage/photocurrent and changes therein due to the applied infrared radiation.
Figure 10 is a graph showing the experimentally measured optical absorption coefficient for the semiconducting rhenium disilicide as a function of wavelength and confirms the infrared detection capabilities of ReSi2 in these longer wavelengths.
Superimposed on the graph are atmospheric transmission windows of infrared radiation 520, 521.
Certain optical fibers also transmit infrared radiation in these longer wavelength ranges, and NASA has also expressed an interest in extra-terrestrial infrared instrumentation applications in these longer wavelength ranges.
Existing silicon compatible intri~sic semiconductor detectors can detect wavelengths up to a range o~ about two miorons, while this rhenlum disilicide detector can detect infrared radiation in all practical long wavelengths up to about 1~
microns. Thus, this invention provides a silicon : . . .~.~ . .
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compatible intrinsic semiconductor detector that can detect infrared radiation transmitted through the longer wavelength atmospheric transmission windows o~ infrared radiation, and can be used with fiber optics that transmit such longer wavelength radiation. -While a specific embodiment has been disclosed, it is expected that those skilled in the art will devise alternate embod;ments that fall within the scope of the appended claims.
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Silicon intrinsic detectors are effective for visible light and perhaps can be extended in time to wavelengths up to about o.9 microns. Extrinsic silicon detectors are sensitive to much longer wavelengths, but have absorption coef~icients of 1000 to 10,000 times lower than those of intrinsic detectors.
Germanium and germanium-silicon alloys can be grown on a silicon wafer. The absolute long-wavelength limit for germanium based alloys is one micron and value of about 1.9 microns with virtually pure germanium. However, germanium and germanium-silicon alloys are relatively weak absorbers of infrared radiation. Special structures, such as wave guides, must be developed to use both germanium and germanium-silicon alloys as thin films. The wave guides and other structures are necessary becaùse such devices are weak absorbers of infrared radiation.
There is also available a family of Mercury-Cadmium-Tellerium devices for infrared detection.
These devices operate without being able to be combined, to date, with an effective microelectronics technology as is possible with silicon based devices.
The devices described above have been effective to some extent. ~lowever, there still remains a need for detectors meeting all of the following characteristics: (1) The efficiency oP an intrinsic semiconductor detector; (2) Efficient operation in the 1.0 to 14 micron wavelength range;
and, (3) Practical fabrication on a silicon chip in a monolithic structure. The need for such devices has been recognized by persons skilled in this art and some attempts have been made recently to fabricate such a device usinq gallium arsenide (GaAs) and related compounds on a silicon substrate.
However, these materials are not currently compatible with silicon processing.
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132696`6 SO~TION
These problems are solved and a technical advance achieved in the field b~ rhenium disilicide infrared detector devices which are capable of (1) exhibiting decreased electrical resistance or (2) generating a photocurrent or photovoltage when exposed to e1ectromagnetic radiation.
There are numerous applications for infrared ~ detectors, one of which is for terrèstrial imaging 10 ~ from~space.~ The limited wavelengths which can be ~ .... . . ... . . .
transmitted through the atmosphere are approximately 1.5 to 1.9: 2.0 to 2.6; 3.4 to 4.2; 4.5 to 5.0 and 8 to 13 microns. N~SA has shown an interest in the 2.5 to 30 micron wavelength range. Another application for the present invention is in combination with fiber optic systems using silica based fibers ~which in long haul, high capacity systems have narrow spectral windows centered on about 1.3 and 1.55 microns). ~ short haul system has an additional spectral window ~rom about 0.8 to , 0.9 microns as well as the windows at about 1.3 and 1.55 microns. In such applications, the output of the infrared sources can be fed directly to the fiber optics for transmission to an infrared detector and an associated processor. Since the present rhenium disilicide devices are silicon-compatible, they can be combined on the same chip as other silicon based elements such as data storage and data processing elements. In such a ; 30 combination, the signal processing and related computing can be performed on the very same chip that holds the source, detector, imaging or detector array. Monolithic systems afford many advantages compared to hybrid systems.
:
: ' , ~326966 The detectors can be arranged singly or in an array. A two dimensional array can be constructed.
Each element in the array has an output which can be converted into a digital electrical signal.
The rhenium disilicide infrared detector device consists of a layer of semiconducting ReSi2 deposited or grown on a su~strate. Ohmic contacts are attached to the semiconducting ReSi2 for use with a detector circuit to measure a change in resistance of the semiconducting ReSi2 indicative of the presence of infrared radiation of less than 14 microns in wavelength. In a preferred embodiment the semiconducting ReSi2 is deposited in the form of a thin film on a silicon substrate and being doped with a dopant the same as the silicon substrate.
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BRIEF DESCRIPTION OF l~IE DI~WINGS
Figùre l shows a perspective view of one embodiment of the present invention showing a semiconducting metal silicide infrared radiation detector.
Figure 2 illustrates a circuit that uses the semiconductive metal silicide infrared radiation detector of Figure 1.
Figure 3 shows an array of device~ shown in Figure 1 forming another embodiment of the present invention.
Figure 4 shows an array of devices, as shown in Figure 3, formed on a common silicon substrate with a very large scale integrated circuit forming another embodiment of the present invention.
Figure 5 shows an array of semiconducting metal silicide infrared detectors arranged in an array to mate with a bundle of optical fibers forming still another embodiment of the present invention.
Figure 6 is a perspective view of another embodiment of the present invention showing the semiconducting metal silicide layer directly on the silicon substrate.
Figure 7 shows an array of semiconducting metal silicide infrared detectors arranged to mate with an array of optical fibers forming still another embodiment of the present invention.
Figure 8 shows a perspective view of a samiconducting metal homo~unction radiation source and detector forming another embodiment of the present invention.
Figure 9 is a perspective view of a semiconducting metal heterojunction ~nfrared radiation detector forming another embodiment of the :. " 7 ,~' ,:: :::, . ' ... , :
. ~7~ 1326966 present invention.
Figure lo is a chart showing the optical absorptlon coefflclent of the present semlconductlng metal sllicide infrared radiation detector.
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13~6966 DESCRIPTION OF T~IE INVENTION
Figure 1 shows a perspective view of one embodiment of the present invention being formed of a semiconducting metal silicide shown generally by the numeral 10. The substrate 12 is a silicon wafer thermally oxidized to grow 1000 angstroms more or less of insulating oxide 14. The oxide layer 14 is then coated with several thousand angstroms of polycrystalline silicon film 16. This polycrystalline silicon film 16 is added commonly by low pressure vapor deposition. ~ thin film of metal, rhenium, is then added to the polycrystalline silicon film 16 and then reacted by heating the sample in an inert environment to react the metal film with the polycrystalline silicon film 16 to form a semiconducting metal silicide 18, rhenium disilicide (ReSi2). Electrical contact with the semiconducting metal silicide 18 is achieved by depositing an aluminum or other conductive film 20, 22 and 24 on the semiçonducting metal silicide 18 which is then photolithographically patterned.
Other insulating substrates can be used and coated with a silicon film. The metal deposition technique can be evaporation or chemical vapor deposition. Futhermore, the metal silicide film may be formed by (simultaneous) codeposition of metal and silicon.
Figure 6 shows a another embodiment of the semiconductive metal silicide detector having a 6ubstrate 120 on top of which is formed a thin film o~ semiconducting rhenium disilicide 180.
Conductive pads 121, 122 and 140 are formed on the sur~ace of the semiconductive metal silicide thin film 180.
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9- 13~6966 The metal can be chosen from the group consisting of: iron, iridium, manganese, chromium, rhenium, magnesium, calcium, barium or osmium. The semiconducting metal silicides formed are: iron disilicide (FeSi2), iridium silicide (IrSil 75), manganese silicide (MnSi1 7), chromium disilicide (CrSi2), rhenium disilicide (ReSi2), magnesium silicide (Mg2Si), barium disilicide ~8aSi2~, calcium silicide (Ca2Si) or osmium disilicide (OsSi2) respectively.
The process for forming each semiconducting metal silicide varies as to annealing temperature and time. The chart 1 shown below shows some combinations of time, temperature and a range of thickness for the semiconducting metal silicides.
Each semiconducting metal silicide thus made has been tested and shown to be a true semiconductor which demonstrates useful radiation detection properties based either on analysis of the data showing the optical absorption edge for each material together with measurements of electrical resistivity as a function of temperature.
Element Temp.~Time (minutes) Thickness(Angstroms) Chromium 900 C/120-1100 C/120 1000 - 13,000 Manganese 800 C/120-1000 C/60 1900 - 15,000 Iridium 750 C/120-850 C/120 1355 - 5,418 Rhenium 90o C/120307 - 768 Iron 900 C/120 700 - 3,200 . . .
The active silicide layer can be made by depositing a thin film of the desired metal onto a silicon wafer which has been polished and cleaned for integrated circuit fabrication. It is important to have a clean metal-silicon interface before annealing. A~ter heating to the proper temperature ' ' : . ,,, -. . .
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-lo- 1 3269 66 and for the proper time, the metal film will react with the silicon substrate to form semiconducting metal silicide. The semiconducting metal silicide film may also be grown on a polycrystalline silicon surface.
For example, rhenium disilicide ~ReSi2) was prepared by ion beam sputtering of rhenium film onto 1-0-0 polished silicon wafers. The semiconducting metal silicide layer was grown by reaction of the rhenium metal film with the silicon substrate at an elevated temperature such as 900 degrees C in an inert environment of flowing argon gas. The substrate is ion-milled in vacuum immediately prior to metal deposition.
Figure 2 illustrates a circuit that uses the semiconductive rhenium disilicide detector of Figure 1. The conductive pads 20, 22 formed on the semiconducting rhenium silicide layer shown in Figure 1 are connected by wires 21, 23 to a constant current source 50. Conductive pads 24 of Figure 1 are connected by wires 25, 27 to a voltmeter 60. A
source of infrared radiation 70 illuminates semiconducting metal silicide infrared detector device 10. The resistance of the semiconducting metal silicide infrared detector device 10 drops as it is exposed to infrared radiation so that the voltage measured by voltmeter 60 drops as a function of the intensity of infrared radiation from infrared radiation source 70. An analog-to-digital converter 62 i8 shown receiving information from voltmeter 60 ; for digitizing t~e output of the semiconducting metal silicide infrared detector 10. ~lternatively, a change in current in the presence of a constant voltage across the detector device 10 can be , ., ~ . , i --: .: :' ' : ., ... i ~ , :
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-11- 132~36~
measured to determine the change in resistance of device 10.
Figure 3 shows an array of infrared detector devices of the type shown in Figure 1. The array shown generally by the number 300 is formed of semiconducting metal silicide infrared detector devices 302. Each infrared detector device 302 has leads 304 into which a constant current can be fed from a current source (not shown). Each infrared detector device 302 also has leads 306 from which the voltage drop across the infrared detector device can be measured or detected. The array 300 is grown on a substrate 308 which can be formed of a wide variety of materials including silicon. If silicon is the chosen substrate, the entire array can be formed monolithically. In that case, the leads 304, 306 would be formed on the substrate 308 phot~lt~ graph~ by techniques well known in the semiconductor fabricating industry.
Figure 4 shows an integrated circuit 101 formed of microprocessor circuitry 100 (or other VLSI
device) and a semiconducting metal silicide infrared detector array 110 shown for the purposes of illustration only as a separate element. One use of such a device is incoming missile detection and ranging. Currently, such combinations of infrared detection and computer analy~is of the incoming signals are performed by interconnecting discrete devices or by using monolithic arrays of Schottky barrier detectors. The discrete devices each perform satisfactorily but are not as fast, compact, low cost to make, or reliable as a single integrat~d device. The Schottky barrier detectors have a low guantum efficiency and are relatively slow devices.
' '' .'., :
' ~ . ' ' The potential speed difference is substantial, p~rhaps loo times that of present devices.
Intrinsic semiconductor detectors have a higher quantum efficiency than Schottky barrier detectors.
The quality of the electrical interconnects is an important factor in the speed of the device.
Similarly, the integrated system is more rugged, faster and more reliable than a hybrid system formed of discrete devices. The net result is that such devices could be hand held or easily portable. The increased speed of data processing, the ruggedness and reliability can be critical in military and space use.
Figure 4 shows the array as a two dimensional array of semiconducting metal silicide detectors 12 whose output is represented by the bundle of leads 112 which contain data fed to microprocessor circuitry lO0. Microprocessor circuitry 100 fabricated on substrate 106 receives power through 20 leads 102 and transmit~ information via leads 104.
Additional data and control information may be placed into the microprocessor by leads 108. The entire integrated circuit 105 is fabricated on a substrate 106 typically of silicon.
Figure 5 shows a bundle of optical fibers 200 which are aligned with and receive signals from a mated array 210 of semiconducting metal silicide sources 12. The direction of transmission can be reversed so that the fiber optic bundle 200 transmit radiation to an array of semiconducting metal silicide detectors 12. While the sources can in some cases operate as detectors, in practice devices are optimized for each application as either sources or detectors.
Figure 7 shows a linear array 309 of semiconducting metal silicide detectors 313, 311 and 303 having leads 305 and 307 for receiving current and for connecting to instruments for measuring changed resistance, photocurrent or photovoltage.
The linear array 309 is mated with a matching array of optical fibers 325 having, for example, three fibers 203, 211 and 213 which align with corresponding elements 303, 311 and 313 as shown in the figure.
Figure 8 shows in detail a substrate 401 which can be formed of either p- or n- type silicon and has two layers of either n or p type doped semiconducting metal silicide 402 and 404 formed thereon. The upper and lower semiconducting metal silicide layers must be oppositely doped material and the substrate 401 can be opposite in doping to the semiconducting metal silicide layer adjacent to it as shown in Figure 8. Part of the upper semiconducting metal silicide layer 406 is removed to expose the surface 410 of the lower semiconducting metal silicide layer 402. Conductive contacts 40~ are formed on both surfaces 406 and 410 for permitting electrical connection to the device. Current is injected at lead 413 and rcmoved at lead 415 or vice versa for operation as a source,' of electromagnetic radiation. When exposed to electromagnetic radiation, the device may gcnerate a photocurrent "i" or alternatively a photovoltage between leads 413 and 415. Voltage/current sensor circuit 420 is connected to leads 413, 415 to detect the photovoltage/photocurrent and changes therein due to the applied infrared radiation.
Figure 9 shows another embodiment in the form . ... . .
' - : . -of a heterojunction device 500 having a silicon substrate 501 and a semiconducting metal silicide thin film 502. Conductive contacts 514 and 506 are formed on the bottom of the substrate and the top of the semiconducting metal silicide thin film, respectively. Current is injected at lead 512 and removed at lead 510 or vice versa for operation of heterojunction device 500 as a source of electromagnetic radiation. When exposed to electromagnetic radiation, the heterojunction device 500 may generate a photocurrent "i" or alternatively a photovoltage between leads 510 and 512.
Voltage/current sensor circuit 520 is connected to 1 e a d s 5 1 0 , 5 1 2 t o d e t e c t t h e photovoltage/photocurrent and changes therein due to the applied infrared radiation.
Figure 10 is a graph showing the experimentally measured optical absorption coefficient for the semiconducting rhenium disilicide as a function of wavelength and confirms the infrared detection capabilities of ReSi2 in these longer wavelengths.
Superimposed on the graph are atmospheric transmission windows of infrared radiation 520, 521.
Certain optical fibers also transmit infrared radiation in these longer wavelength ranges, and NASA has also expressed an interest in extra-terrestrial infrared instrumentation applications in these longer wavelength ranges.
Existing silicon compatible intri~sic semiconductor detectors can detect wavelengths up to a range o~ about two miorons, while this rhenlum disilicide detector can detect infrared radiation in all practical long wavelengths up to about 1~
microns. Thus, this invention provides a silicon : . . .~.~ . .
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compatible intrinsic semiconductor detector that can detect infrared radiation transmitted through the longer wavelength atmospheric transmission windows o~ infrared radiation, and can be used with fiber optics that transmit such longer wavelength radiation. -While a specific embodiment has been disclosed, it is expected that those skilled in the art will devise alternate embod;ments that fall within the scope of the appended claims.
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Claims (30)
1. A method of detecting infrared radiation equal to or less than 14 microns in wavelength comprising the steps of:
electrically connecting a conductivity detector to a body of semiconducting ReSi2;
exposing said body of semiconducting ReSi2 to said infrared radiation;
detecting a change in the conductivity of said body of semiconducting ReSi2 in response to said infrared radiation.
electrically connecting a conductivity detector to a body of semiconducting ReSi2;
exposing said body of semiconducting ReSi2 to said infrared radiation;
detecting a change in the conductivity of said body of semiconducting ReSi2 in response to said infrared radiation.
2. The method of claim 1 wherein said step of electrically connecting includes the steps of:
forming at least two electrically conductive contacts on said body of semiconducting ReSi2 to make ohmic contact with said body of semiconducting ReSi2;
measuring the conductivity of said body of semiconducting ReSi2 between a first and a second ones of said electrically conductive contacts.
forming at least two electrically conductive contacts on said body of semiconducting ReSi2 to make ohmic contact with said body of semiconducting ReSi2;
measuring the conductivity of said body of semiconducting ReSi2 between a first and a second ones of said electrically conductive contacts.
3. The method of claim 2 wherein said step of measuring includes the step of:
determining the voltage between said first and second electrically conductive contacts in the presence of a constant current therebetween.
determining the voltage between said first and second electrically conductive contacts in the presence of a constant current therebetween.
4. The method of claim 3 wherein said step of detecting includes the step of:
measuring the change in said voltage between said first and second electrically conductive contacts, due to said infrared radiation, in the presence of said constant current therebetween.
measuring the change in said voltage between said first and second electrically conductive contacts, due to said infrared radiation, in the presence of said constant current therebetween.
5. The method of claim 2 wherein said step of measuring includes the step of:
determining the current between said first and second electrically conductive contacts in the presence of a constant voltage therebetween.
determining the current between said first and second electrically conductive contacts in the presence of a constant voltage therebetween.
6. The method of claim 5 wherein said step of detecting includes the step of:
measuring the change in said current between said first and second electrically conductive contacts, due to said infrared radiation, in the presence of said constant voltage therebetween.
measuring the change in said current between said first and second electrically conductive contacts, due to said infrared radiation, in the presence of said constant voltage therebetween.
7. Infrared detector apparatus for detecting infrared radiation equal to or less than 14 microns wavelength comprising:
a layer of semiconducting ReSi2 deposited or grown on a substrate, and having first and second electrically conductive contacts formed on said layer of semiconducting ReSi2 for making ohmic contact with said layer of ReSi2;
means for directing infrared radiation on said layer of semiconducting ReSi2;
means connected to said first and second electrically conductive contacts for measuring the resistance of said layer of semiconducting ReSi2 between said first and second electrically conductive means.
a layer of semiconducting ReSi2 deposited or grown on a substrate, and having first and second electrically conductive contacts formed on said layer of semiconducting ReSi2 for making ohmic contact with said layer of ReSi2;
means for directing infrared radiation on said layer of semiconducting ReSi2;
means connected to said first and second electrically conductive contacts for measuring the resistance of said layer of semiconducting ReSi2 between said first and second electrically conductive means.
8. The apparatus of claim 7 further including:
means connected to said measuring means for registering a change in said measured resistance of said layer of semiconducting ReSi2 between said first and second electrically conductive contacts in response to said infrared radiation.
means connected to said measuring means for registering a change in said measured resistance of said layer of semiconducting ReSi2 between said first and second electrically conductive contacts in response to said infrared radiation.
9. The apparatus of claim 7 where said measuring means includes:
means for measuring the voltage between said first and said second electrically conductive contacts in the presence of a constant current therebetween.
means for measuring the voltage between said first and said second electrically conductive contacts in the presence of a constant current therebetween.
10. The apparatus of claim 7 where said measuring means includes:
means for measuring the current between said first and said second electrically conductive contacts in the presence of a constant voltage therebetween.
means for measuring the current between said first and said second electrically conductive contacts in the presence of a constant voltage therebetween.
11. Infrared detector apparatus for detecting infrared radiation comprising:
substrate means;
a layer of semiconducting ReSi2 deposited or grown on said substrate means;
first and second electrically conductive means formed on said layer of semiconducting ReSi2 for making ohmic contact with said layer of ReSi2;
means for directing infrared radiation equal to or less than 14 microns wavelength on said layer of semiconducting ReSi2;
means connected to said first and second electrically conductive means for measuring the resistance of said layer of semiconducting ReSi2 between said first and second electrically conductive means.
substrate means;
a layer of semiconducting ReSi2 deposited or grown on said substrate means;
first and second electrically conductive means formed on said layer of semiconducting ReSi2 for making ohmic contact with said layer of ReSi2;
means for directing infrared radiation equal to or less than 14 microns wavelength on said layer of semiconducting ReSi2;
means connected to said first and second electrically conductive means for measuring the resistance of said layer of semiconducting ReSi2 between said first and second electrically conductive means.
12. The apparatus of claim 11 further including:
means connected to said measuring means for registering a change in said measured resistance of said layer of semiconducting ReSi2 between said first and second electrically conductive means in response to said infrared radiation.
means connected to said measuring means for registering a change in said measured resistance of said layer of semiconducting ReSi2 between said first and second electrically conductive means in response to said infrared radiation.
13. The apparatus of claim 11 where said measuring means includes:
means for measuring the voltage between said first and said second electrically conductive means in the presence of a constant current therebetween.
means for measuring the voltage between said first and said second electrically conductive means in the presence of a constant current therebetween.
14. The apparatus of claim 11 where said measuring means includes:
means for measuring the current between said first and said second electrically conductive means in the presence of a constant voltage therebetween.
means for measuring the current between said first and said second electrically conductive means in the presence of a constant voltage therebetween.
15. A method of detecting infrared radiation equal to or less than 14 microns wavelength comprising the steps of:
depositing or growing a layer of semiconducting ReSi2 on a substrate;
forming first and second electrically conductive contacts on said layer of semiconducting ReSi2 for making ohmic contact with said layer of ReSi2;
directing infrared radiation on said layer of semiconducting ReSi2;
measuring the resistance of said layer of semiconducting ReSi2 between said first and second electrically conductive means.
depositing or growing a layer of semiconducting ReSi2 on a substrate;
forming first and second electrically conductive contacts on said layer of semiconducting ReSi2 for making ohmic contact with said layer of ReSi2;
directing infrared radiation on said layer of semiconducting ReSi2;
measuring the resistance of said layer of semiconducting ReSi2 between said first and second electrically conductive means.
16. The method of claim 15 further including the step of:
registering a change in said measured resistance of said layer of semiconducting ReSi2 between said first and second electrically conductive contacts in response to said infrared radiation.
registering a change in said measured resistance of said layer of semiconducting ReSi2 between said first and second electrically conductive contacts in response to said infrared radiation.
17. The method of claim 16 wherein the step of registering includes the step of:
measuring a change in the voltage between said first and second electrically conductive contacts in response to said infrared radiation and in the presence of a constant current.
measuring a change in the voltage between said first and second electrically conductive contacts in response to said infrared radiation and in the presence of a constant current.
18. The method of claim 16 wherein the step of registering includes the step of:
measuring a change in the current between said first and second electrically conductive contacts in response to said infrared radiation and in the presence of a constant voltage.
measuring a change in the current between said first and second electrically conductive contacts in response to said infrared radiation and in the presence of a constant voltage.
19. An infrared detector for detecting infrared radiation equal to or less than 14 microns wavelength comprising:
a p- or n- substrate means;
a first thin film of semiconducting ReSi2 deposited on said substrate means;
a second thin film of semiconducting ReSi2 deposited on said first thin film and doped with a type of dopant the opposite than of said first thin film;
first and second electrically conducting means formed on said first and second thin films, respectively;
means for directing infrared radiation on said layers of semiconducting ReSi2;
means connected to said first and second electrically conductive means for measuring the photovoltage of said layers of semiconducting ReSi2 between said first and second electrically conductive means.
a p- or n- substrate means;
a first thin film of semiconducting ReSi2 deposited on said substrate means;
a second thin film of semiconducting ReSi2 deposited on said first thin film and doped with a type of dopant the opposite than of said first thin film;
first and second electrically conducting means formed on said first and second thin films, respectively;
means for directing infrared radiation on said layers of semiconducting ReSi2;
means connected to said first and second electrically conductive means for measuring the photovoltage of said layers of semiconducting ReSi2 between said first and second electrically conductive means.
20. The apparatus of claim 19 wherein said measuring means includes:
means for registering a change in said photovoltage between said first and second electrically conductive means in response to said infrared radiation.
means for registering a change in said photovoltage between said first and second electrically conductive means in response to said infrared radiation.
21. An infrared detector for detecting infrared radiation equal to or less than 14 microns wavelength comprising:
a p- or n- substrate means;
a first thin film of semiconducting ReSi2 deposited on said substrate means;
a second thin film of semiconducting ReSi2 deposited on said first thin film and doped with a type of dopant the opposite than of said first thin film;
first and second electrically conducting means formed on said first and second thin films, respectively;
means for directing infrared radiation on said layers of semiconducting ReSi2;
means connected to said first and second electrically conductive means for measuring the photocurrent of said layers of semiconducting ReSi2 between said first and second electrically conductive means.
a p- or n- substrate means;
a first thin film of semiconducting ReSi2 deposited on said substrate means;
a second thin film of semiconducting ReSi2 deposited on said first thin film and doped with a type of dopant the opposite than of said first thin film;
first and second electrically conducting means formed on said first and second thin films, respectively;
means for directing infrared radiation on said layers of semiconducting ReSi2;
means connected to said first and second electrically conductive means for measuring the photocurrent of said layers of semiconducting ReSi2 between said first and second electrically conductive means.
22. The apparatus of claim 21 wherein said measuring means includes:
means for registering a change in said photocurrent between said first and second electrically conductive means in response to said infrared radiation.
means for registering a change in said photocurrent between said first and second electrically conductive means in response to said infrared radiation.
23. An infrared radiation detector for detecting infrared radiation equal to or less than 14 microns in wavelength comprising:
a silicon substrate means a thin film of semiconducting ReSi2 formed on said silicon substrate means and doped with a dopant the same as that of said silicon substrate means;
first and second electrically conductive, means formed on said thin film of semiconducting ReSi2 and said silicon substrate means, respectively;
means for directing infrared radiation on said thin film of semiconducting ReSi2;
means connected to said first and second electrically conductive means for measuring the photovoltage of said thin film of semiconducting ReSi2 between said first and second electrically conductive means.
a silicon substrate means a thin film of semiconducting ReSi2 formed on said silicon substrate means and doped with a dopant the same as that of said silicon substrate means;
first and second electrically conductive, means formed on said thin film of semiconducting ReSi2 and said silicon substrate means, respectively;
means for directing infrared radiation on said thin film of semiconducting ReSi2;
means connected to said first and second electrically conductive means for measuring the photovoltage of said thin film of semiconducting ReSi2 between said first and second electrically conductive means.
24. The apparatus of claim 20 wherein said measuring means includes:
means for registering a change in said photovoltage between said first and second electrically conductive means in response to said infrared radiation.
means for registering a change in said photovoltage between said first and second electrically conductive means in response to said infrared radiation.
25. An infrared radiation detector for detecting infrared radiation equal to or less than 14 microns in wavelength comprising:
a silicon substrate means;
a thin film of semiconducting ReSi2 formed on said silicon substrate means and doped with a dopant the same as that of said silicon substrate means;
first and second electrically conductive means formed on said thin film of semiconducting ReSi2 and said silicon substrate means, respectively;
means for directing infrared radiation on said thin film of semiconducting ReSi2;
means connected to said first and second electrically conductive means for measuring the photocurrent of said this film of semiconducting ReSi2 between said first and second electrically conductive means.
a silicon substrate means;
a thin film of semiconducting ReSi2 formed on said silicon substrate means and doped with a dopant the same as that of said silicon substrate means;
first and second electrically conductive means formed on said thin film of semiconducting ReSi2 and said silicon substrate means, respectively;
means for directing infrared radiation on said thin film of semiconducting ReSi2;
means connected to said first and second electrically conductive means for measuring the photocurrent of said this film of semiconducting ReSi2 between said first and second electrically conductive means.
26. The apparatus of claim 25 wherein said measuring means includes:
means for registering a change in said photocurrent between said first and second electrically conductive means in response to said infrared radiation.
means for registering a change in said photocurrent between said first and second electrically conductive means in response to said infrared radiation.
27. An infrared radiation detector for detecting infrared radiation equal to or less than 14 microns in wavelength comprising:
a silicon substrate means;
a thin film of semiconducting ReSi2 formed on said silicon substrate means and doped with a dopant opposite to that of said silicon substrate means;
first and second electrically conductive means formed on said thin film of semiconducting ReSi2 and said silicon substrate means, respectively;
means for directing infrared radiation on said thin film of semiconducting ReSi2;
means connected to said first and second electrically conductive means for measuring the photovoltage of said thin film of semiconducting ReSi2 between said first and second electrically conductive means.
a silicon substrate means;
a thin film of semiconducting ReSi2 formed on said silicon substrate means and doped with a dopant opposite to that of said silicon substrate means;
first and second electrically conductive means formed on said thin film of semiconducting ReSi2 and said silicon substrate means, respectively;
means for directing infrared radiation on said thin film of semiconducting ReSi2;
means connected to said first and second electrically conductive means for measuring the photovoltage of said thin film of semiconducting ReSi2 between said first and second electrically conductive means.
28. The apparatus of claim 27 wherein said measuring means includes:
means for registering a change in said photovoltage between said first and second electrically conductive means in response to said infrared radiation.
means for registering a change in said photovoltage between said first and second electrically conductive means in response to said infrared radiation.
29. An infrared radiation detector for detecting infrared radiation equal to or less than 14 microns in wavelength comprising:
a silicon substrate means;
a thin film of semiconducting ReSi2 formed on said silicon substrate means and doped with a dopant opposite to that of said silicon substrate means;
first and second electrically conductive means formed on said thin film of semiconducting ReSi2 and said silicon substrate means, respectively;
means for directing infrared radiation on said thin film of semiconducting ReSi2;
means connected to said first and second electrically conductive means for measuring the photocurrent of said thin film of semiconducting ReSi2 between said first and second electrically conductive means.
a silicon substrate means;
a thin film of semiconducting ReSi2 formed on said silicon substrate means and doped with a dopant opposite to that of said silicon substrate means;
first and second electrically conductive means formed on said thin film of semiconducting ReSi2 and said silicon substrate means, respectively;
means for directing infrared radiation on said thin film of semiconducting ReSi2;
means connected to said first and second electrically conductive means for measuring the photocurrent of said thin film of semiconducting ReSi2 between said first and second electrically conductive means.
30. The apparatus of claim 29 wherein said measuring means includes:
means for registering a change in said photocurrent between said first and second electrically conductive means in response to said infrared radiation.
means for registering a change in said photocurrent between said first and second electrically conductive means in response to said infrared radiation.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/913,354 US4782377A (en) | 1986-09-30 | 1986-09-30 | Semiconducting metal silicide radiation detectors and source |
| US07/177,772 US4914042A (en) | 1986-09-30 | 1988-04-05 | Forming a transition metal silicide radiation detector and source |
| US07/189,310 US4940898A (en) | 1986-09-30 | 1988-05-02 | Semiconducting metal silicide radiation detectors |
| CA000613820A CA1326966C (en) | 1986-09-30 | 1989-09-28 | Semiconducting metal silicide radiation detectors |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/913,354 US4782377A (en) | 1986-09-30 | 1986-09-30 | Semiconducting metal silicide radiation detectors and source |
| US07/177,772 US4914042A (en) | 1986-09-30 | 1988-04-05 | Forming a transition metal silicide radiation detector and source |
| US07/189,310 US4940898A (en) | 1986-09-30 | 1988-05-02 | Semiconducting metal silicide radiation detectors |
| CA000613820A CA1326966C (en) | 1986-09-30 | 1989-09-28 | Semiconducting metal silicide radiation detectors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1326966C true CA1326966C (en) | 1994-02-15 |
Family
ID=27426723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000613820A Expired - Fee Related CA1326966C (en) | 1986-09-30 | 1989-09-28 | Semiconducting metal silicide radiation detectors |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA1326966C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113889547A (en) * | 2020-07-02 | 2022-01-04 | 贵州师范学院 | Photoelectric detector and preparation method thereof |
-
1989
- 1989-09-28 CA CA000613820A patent/CA1326966C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113889547A (en) * | 2020-07-02 | 2022-01-04 | 贵州师范学院 | Photoelectric detector and preparation method thereof |
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| MKLA | Lapsed | ||
| MKLA | Lapsed |
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