CA1292809C - Detecteur et diode melangeuse fonctionnant sans tension de polarisation et methode de fabrication de ces dispositifs - Google Patents

Detecteur et diode melangeuse fonctionnant sans tension de polarisation et methode de fabrication de ces dispositifs

Info

Publication number
CA1292809C
CA1292809C CA000541844A CA541844A CA1292809C CA 1292809 C CA1292809 C CA 1292809C CA 000541844 A CA000541844 A CA 000541844A CA 541844 A CA541844 A CA 541844A CA 1292809 C CA1292809 C CA 1292809C
Authority
CA
Canada
Prior art keywords
layer
intrinsic
thickness
diode
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CA000541844A
Other languages
English (en)
Inventor
Mark P. Zurakowski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Priority to CA000541844A priority Critical patent/CA1292809C/fr
Application granted granted Critical
Publication of CA1292809C publication Critical patent/CA1292809C/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
CA000541844A 1987-07-10 1987-07-10 Detecteur et diode melangeuse fonctionnant sans tension de polarisation et methode de fabrication de ces dispositifs Expired - Lifetime CA1292809C (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA000541844A CA1292809C (fr) 1987-07-10 1987-07-10 Detecteur et diode melangeuse fonctionnant sans tension de polarisation et methode de fabrication de ces dispositifs

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA000541844A CA1292809C (fr) 1987-07-10 1987-07-10 Detecteur et diode melangeuse fonctionnant sans tension de polarisation et methode de fabrication de ces dispositifs

Publications (1)

Publication Number Publication Date
CA1292809C true CA1292809C (fr) 1991-12-03

Family

ID=4136065

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000541844A Expired - Lifetime CA1292809C (fr) 1987-07-10 1987-07-10 Detecteur et diode melangeuse fonctionnant sans tension de polarisation et methode de fabrication de ces dispositifs

Country Status (1)

Country Link
CA (1) CA1292809C (fr)

Similar Documents

Publication Publication Date Title
US4119994A (en) Heterojunction and process for fabricating same
US4410902A (en) Planar doped barrier semiconductor device
CA1092723A (fr) Dispositif a semiconducteur a grande vitesse
US4383269A (en) Graded bandgap photodetector
US5491461A (en) Magnetic field sensor on elemental semiconductor substrate with electric field reduction means
US3821777A (en) Avalanche photodiode
US4278986A (en) Semiconductor diode
US4839709A (en) Detector and mixer diode operative at zero bias voltage
US5041882A (en) Heterojunction bipolar transistor
US4841350A (en) Static induction photothyristor having a non-homogeneously doped gate
EP1502307A1 (fr) Diode pin a heterojonction et procede de fabrication de ladite diode
US4825264A (en) Resonant tunneling semiconductor device
US4929984A (en) Resonant tunnelling barrier structure device
EP0092643B1 (fr) Transistor à conduction ballistique
JPH08321626A (ja) 処理許容誤差を大きくできる高電圧の2レベル静電容量バラクタダイオード
CA1292809C (fr) Detecteur et diode melangeuse fonctionnant sans tension de polarisation et methode de fabrication de ces dispositifs
US3427515A (en) High voltage semiconductor transistor
US4855796A (en) Beam lead mixer diode
EP0235248B1 (fr) Diode detectrice/melangeuse fonctionnant avec une tension de polarisation zero et son procede de fabrication
US3739243A (en) Semiconductor device for producing or amplifying electric oscillations
US3916427A (en) Wideband IMPATT diode
CA1203877A (fr) Methode de fabrication de photodiodes planar a heterostructure
US4972246A (en) Effective narrow band gap base transistor
US5168328A (en) Heterojunction impatt diode
Mader Electrical properties of bulk-barrier diodes

Legal Events

Date Code Title Description
MKLA Lapsed
MKEC Expiry (correction)

Effective date: 20121205