CA1286373C - Tantalum capacitor lead wire - Google Patents
Tantalum capacitor lead wireInfo
- Publication number
- CA1286373C CA1286373C CA000543543A CA543543A CA1286373C CA 1286373 C CA1286373 C CA 1286373C CA 000543543 A CA000543543 A CA 000543543A CA 543543 A CA543543 A CA 543543A CA 1286373 C CA1286373 C CA 1286373C
- Authority
- CA
- Canada
- Prior art keywords
- tantalum
- lead
- capacitor
- billet
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract 36
- 229910052715 tantalum Inorganic materials 0.000 title claims abstract 28
- 239000003990 capacitor Substances 0.000 title claims abstract 12
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 title abstract 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical group [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract 9
- 229910052758 niobium Inorganic materials 0.000 claims abstract 8
- 239000010955 niobium Substances 0.000 claims abstract 8
- 239000002344 surface layer Substances 0.000 claims 11
- 239000010410 layer Substances 0.000 claims 10
- 229910045601 alloy Inorganic materials 0.000 claims 6
- 239000000956 alloy Substances 0.000 claims 6
- 229910052751 metal Inorganic materials 0.000 claims 5
- 239000002184 metal Substances 0.000 claims 5
- 238000000034 method Methods 0.000 claims 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 239000002131 composite material Substances 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- 238000002844 melting Methods 0.000 claims 2
- 230000008018 melting Effects 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- 239000003870 refractory metal Substances 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- 229910003192 Nb–Ta Inorganic materials 0.000 claims 1
- 229910001362 Ta alloys Inorganic materials 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- -1 alloys thereof Chemical compound 0.000 claims 1
- 238000001125 extrusion Methods 0.000 claims 1
- 239000011888 foil Substances 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 238000004663 powder metallurgy Methods 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 238000005096 rolling process Methods 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- ROSDCCJGGBNDNL-UHFFFAOYSA-N [Ta].[Pb] Chemical compound [Ta].[Pb] ROSDCCJGGBNDNL-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Powder Metallurgy (AREA)
Abstract
TANTALUM CAPACITOR LEAD WIRE
ABSTRACT
A tantalum lead wire for capacitors having improved grain growth characteristics is disclosed. The lead preferably comprises a Niobium core having a surface consisting of many discrete layers of Tantalum surrounding the Niobium.
ABSTRACT
A tantalum lead wire for capacitors having improved grain growth characteristics is disclosed. The lead preferably comprises a Niobium core having a surface consisting of many discrete layers of Tantalum surrounding the Niobium.
Claims (5)
1. A flexible elongated metallic structure suitable for providing a lead to a capacitor anode formed of sintered tantalum powder, said flexible structure comprising a tantalum wire having a cross-section less than 1 mm, said wire comprising a metal core and more than one discrete surface layer of tantalum surrounding said core, each tantalum layer having a thickness less than 0.01 mm, said wire being resistant to grain growth between the surface layers when heated to temperatures on the order of 1800° C.
2. The lead of claim 1 wherein the core comprises a refractory metal from the class consisting of niobium, titanium, zirconium, molybdenum, tungsten, tantalum alloys containing less than 80% Ta and alloys of the above refractory metals.
3. The lead of claim 1 wherein the core comprises a low melting metal from the class consisting of copper, nickel, iron, and alloys thereof.
4. The lead of claim 1 wherein the core comprises niobium with a thin layer of molybdenum or tungsten between the niobium and tantalum.
5. The lead of claim 1 wherein the tantalum surface layer surrounds at least two other tantalum layers.
5. A tantalum capacitor comprising a tantalum powder body and a tantalum wire lead, said capacitor having been sintered at a temperature in excess of 1300° C., said tantalum wire lead having a plurality of individual layers of tantalum at the outer surface of the wire, with essentially no grain growth extending through the depth of the layers.
7. The process of forming a tantalum capacitor lead comprising the steps of wrapping a tantalum foil around a metal billet to provide more than one layer of tantalum around the billet, reducing the billet to rod, and drawing the rod to wire of diameter on the order of 0.4 mm.
8. The process of claim 7 wherein the billet is niobium.
9. The process of claim 7 wherein the billet is copper, removing the copper core to provide a hollow tube of tantalum.
10. The process of forming a tantalum capacitor lead comprising the steps of wrapping a tantalum foil around a metal billet to provide more than one layer of tantalum around the billet, compacting said layers and inserting the compacted body in an extrusion billet of a lower melting metal, extruding the composite and drawing the extruded composite to a wire less than 1 mm in diameter, said tantalum layer having a final thickness less than 0.30 mm.
11. A lead for a tantalum powder capacitor, said lead having a diameter of less than 1 mm and comprising a core of niobium (including alloys thereof) and a surface layer of grain stabilized tantalum, the tantalum surface layer having a radial thickness less than 0.30 mm.
12. A lead for a tantalum powder capacitor, said lead having a diameter of less than 1 mm and comprising a core of niobium (including alloys thereof) and a plurality of surface layers of tantalum, each said tantalum surface layer having a radial thickness less than 0.01 mm.
13. The capacitor lead of claim 12 wherein said tantalum surface layer includes at least one discrete layer of tantalum.
14. The capacitor lead of claim 12 wherein said tantalum surface layer is formed of grain stabilized tantalum resulting from the foil rolling of powder metallurgy tantalum raw material.
15. An electrical conductor resistant to grain growth, said conductor having a diameter of less than 1 mm and comprising a core of niobium, including alloys thereof, (such as Nb-Ta alloys) and a surface layer of grain stabilized tantalum, the tantalum surface layer having a radial thickness less than 0.3 mm.
5. A tantalum capacitor comprising a tantalum powder body and a tantalum wire lead, said capacitor having been sintered at a temperature in excess of 1300° C., said tantalum wire lead having a plurality of individual layers of tantalum at the outer surface of the wire, with essentially no grain growth extending through the depth of the layers.
7. The process of forming a tantalum capacitor lead comprising the steps of wrapping a tantalum foil around a metal billet to provide more than one layer of tantalum around the billet, reducing the billet to rod, and drawing the rod to wire of diameter on the order of 0.4 mm.
8. The process of claim 7 wherein the billet is niobium.
9. The process of claim 7 wherein the billet is copper, removing the copper core to provide a hollow tube of tantalum.
10. The process of forming a tantalum capacitor lead comprising the steps of wrapping a tantalum foil around a metal billet to provide more than one layer of tantalum around the billet, compacting said layers and inserting the compacted body in an extrusion billet of a lower melting metal, extruding the composite and drawing the extruded composite to a wire less than 1 mm in diameter, said tantalum layer having a final thickness less than 0.30 mm.
11. A lead for a tantalum powder capacitor, said lead having a diameter of less than 1 mm and comprising a core of niobium (including alloys thereof) and a surface layer of grain stabilized tantalum, the tantalum surface layer having a radial thickness less than 0.30 mm.
12. A lead for a tantalum powder capacitor, said lead having a diameter of less than 1 mm and comprising a core of niobium (including alloys thereof) and a plurality of surface layers of tantalum, each said tantalum surface layer having a radial thickness less than 0.01 mm.
13. The capacitor lead of claim 12 wherein said tantalum surface layer includes at least one discrete layer of tantalum.
14. The capacitor lead of claim 12 wherein said tantalum surface layer is formed of grain stabilized tantalum resulting from the foil rolling of powder metallurgy tantalum raw material.
15. An electrical conductor resistant to grain growth, said conductor having a diameter of less than 1 mm and comprising a core of niobium, including alloys thereof, (such as Nb-Ta alloys) and a surface layer of grain stabilized tantalum, the tantalum surface layer having a radial thickness less than 0.3 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA000543543A CA1286373C (en) | 1986-04-14 | 1987-07-31 | Tantalum capacitor lead wire |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/851,343 US4674009A (en) | 1985-12-23 | 1986-04-14 | Tantalum capacitor lead wire |
| CA000543543A CA1286373C (en) | 1986-04-14 | 1987-07-31 | Tantalum capacitor lead wire |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1286373C true CA1286373C (en) | 1991-07-16 |
Family
ID=25671451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000543543A Expired - Lifetime CA1286373C (en) | 1986-04-14 | 1987-07-31 | Tantalum capacitor lead wire |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA1286373C (en) |
-
1987
- 1987-07-31 CA CA000543543A patent/CA1286373C/en not_active Expired - Lifetime
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKLA | Lapsed |