CA1159507A - Electrostatic imaging - Google Patents

Abstract

ELECTROSTATIC IMAGING

ABSTRACT

An apparatus, method and system for obtaining radiographic in-formation at low radiation exposure levels. The apparatus produces a video signal by optical readout of the latent image formed in a photoconductor sandwich structure by x-ray modulation of the photoconductor's surface charge. The video signal is processed and displayed to provide radiographic information.

Description

--1 h~

E CTROSTATIC IMAGING

TEC~NIC~L FIELD
The present inventiora r~late~ qenerally to apparatu~ a~d rnethods used to obtain image information fro~ ~odulation of a 1miform flu~.
~ore ~pecifically, the present inventisn relateg to method~ and apparatu~ u~ed to produf~e a radio~
graph by producing a laten~ age in a pho~ocon-ductor ~andwich ~tructure and then optically xeadinq out the laten~ i~aage.

a. Facsi~ile and Vidicon~
Facsimile syste~s modula~e an electrizal ~ignal in response to light that i~ refleeted from a ~mall portion of an imageO Facsimile requires production of a real i3Dage.
Vidicon tubes ~tore a latent image a$ a charge distribution pattern in a semico~ductor target. This latent i~age i~ 3canned by an elec trol~ beam and ~e curre~t variatioIl induced by 'che differe~t charge~ on separat~ portion~ of ~
target compri~e~ a video ~ al. Vidicons require use of a high vacuu~ and l?recise focu~ing of an electron b~ that ~ust be shielded ro~ e~t~rnal electric and Dagnetic fields.
b.
Late~ age~ ~tored in sil~er halide!
fillD or ~eleniu~ ~eroradiographic plate~ must be che~aically or powder cloud developed to produce real i~ag~. Use of calciwll tlmg~tate crystals or a high atomic weight gas for i~age intensif.i~ation ~9 ~L~59~

degrades image quality and still requires expo sures of from 1 to 5 R per typical clinical mammo~
gram. Powder cloud development of latQnt xero-radiographic images requires high differential charge densities on the xeroradiographic plate ~o attract and hold powder particles prior to fusing.
This high charge differential is generated by x-rays, or ions, impinging on the surface of a charged selenium plate. The higher the differ ential charge needed to produce an image, the more X-ray exposure is required.
The reader is directed to the ollowing publications for detailed discussion of this prior art.
XERORADIOGRAPHY, J. W. Boag, Phys. Med.
Biol., 1973, Vol. 18, No. 1, pp. 3-37; Princi~als of Radiographic Ex~osure and Processing, Arthur W. Fuchs, 1958, Chapter 14, "X-Ray Intensifying Screens", pp. 158-164.
U.S. Patent No. 3,860,817; Reducing Patient X-Ray Dose During Fluoroscopy With an Image System.
U.S. Patent No. 3,82~,191, Gas ~andling , ~ System for Electronradiography Imaging Chamber.
U.S. Patent No. 3,308,233, Xerographic Facsimile Printer Having Light Beam Scanning and Electrical Chargi~g With Transparent Conductive Belt.
~ Recent research by the present inventors s and others indicates that a detailed latent image s can be created in a ~eroradiographic plate by very low levels (under 10 mR) of X-ray exposure. At this exposure level latent image is present, but its associated electrostatic field is not of sufficient intensity to produce a real image by the powder cloud method of image development. For 5~7 details of this research see, Grant Application, "Radiomammography With Less than 150 m~ Per Expo-sure", available from the Department of Experimen-tal Radiology, M.~. Anderson Hospital, Houston, Texas 77025o c. Semiconductor_Art The prior art of reading charge storage patterns out of multilayer semiconductor sandwich structures lies largely in the are~ of electro-nic:s, especially exotic computer memories.
Charge patterns on certain MOS struc-tures can be "read out" u~ing a photon beam. See, Imaginq and Storaqe With a Uniform MOS Structure, Applied Physics Letters, Vol. 11, Number 11, pp.
359-361. This technology functions by modifying a depletion layer and then charging the layer to saturation. The few microns thick depletion layer is the only active structure.
Electric fields can also be impressed across two separa~le photoconductive insulating films in pressure contact that are precharged to the same polarity. See, Increasin~ the Sensitiv-ity of Xerographic Photoconductors, IBM Technical Disclosure Bulletin, Vol. 6, No. 10, 1964, page 60.
IBM has also developed an exotic charge storage beam addre~sable memory comprising a semiconductor sandwich wherein the semiconductor is totally insulated from both electrodes in the sandwich. See, IBM Technical Disclosure Bulletin, Vol. 9, No. 5, 1966, pp. 555-556. This device allows data readout by shifting charge population to one side or the other of the insulated semicon-ductor.
Finally, some theoretical wor~ has been done on the behavior of light sensitive capaci-~5~5~

tcrs, see, Analysis and Performance of a Li~htSensitive Capacitor, Proceedlngs of the IEEE, A~pril 1965, p. 378.
d. Objects of ~hP Present Invention It is an object of the present invention to provide a method and apparatus capable of replacing conventional photographic and radiogra-phic films.
Another purpose of the present invention is to provide an X-ray sensing system capable of quickly producing radiographic images while expo-sing the sensed patient or object to lower radi-ation dosage than has been practical using prior art systems.
A further purpose of the present inven-tion is to provide an X-ray sensing system whose output is an analog or digital video signal that may be selectively displayed on a television monitor, recorded on film, or directly stored or processed in a computer for image enhancement or pattern recognition.
Yet a further purpose of the present invention is to provide a novel method and appa-ratus for converting a charge distribution on a semi-conducting surface to a modulated electric signal.
Another purpose of the present i~vention is to provide an apparatus and method that com-bines the edge enhancement effect o xeroradio-graphy with a low patient dose level.
Yet still another purpose of the present invention is to provide a novel low noise method and apparatus for reading out a latent image stored as a pattern of electrical charges by selectively discharging said charges in the pres-ence of a reverse biased electric field.

~h~ 5~ 5V7 Yet another purpose of the present invention is to provide an X-ray sensing system that is capable of directly timing X-ray exposure.
A final purpose of the present invention is to provide an apparatus capable of converting a latent image to a modulated electric signal that is simple and inexpensive to build and operate.
DISCLOSIJRE OF INVENTION
The present invention is an X ray film replacement comprising a sandwich detector struc-ture; a method of converting the latent radiogra-phic image stored by such a detector to an elec-tric video signal; an apparatus capable of practi-cing the method and a diagnostic X ray system using the apparatus.
The detector sandwich comprises a con-ductive back plate overlain by a photoconductive layer, for example, a layer of amorphous selenium having a high effective dark resistivity. This high effective dark resistivity may be accom-plished by forming a blockin~ diode layer between the photoconductor and the conductive back plate.
The photoconductor is, in turn, overlaid by an insulator which is covered by a transparent con-ductive film. The structure ~ay be shielded to suppres external electrical noise.
The method of operating the detectox structure re~uires that the detector be charged to a high potential, preferably while the photocon-ductive layer is flooded with light to decrease its resistance. After the light is extinguished, the conductive back plate and transparent film are shorted together, causing surface charge redistri-bution. The detector is then reverse biased by reversing the electric potential placed across it.
Subsequent X-ray exposure forms a latent image by ~ 5~i5(~7 selectively discharging part of the detector's surface charge1 This discharge current may be integrated to control the exposure.
The detector need not be flooded with light, but without the light the resistance of the photoconductor will be higher and the detector will take longer to chargeO The latent image can, also, be formed by exposing the uncharged detector structure to an X-ray flux while its photo-conductor layer is biased by an electric field.
The detector is read out by being raster scanned by a beam of photonsO These photons create electron-hole pairs in the photoconductor, which allow a portion of the photoconductor's surface charge to discharge through an external electric circuitO The signal amplitude in this external circuit at any given time is a function of the intensity of the ; latent image in the portion of the photoconductor being irradiated with photons at that time, iOeO, it is a video signalO
The apparatus for practicing the method comprises means for ~ charging the photoconductor, means for exposing it to X-rays to form a ; latent image and means for outputing this latent image as a video signalO
Since the present invention is essentially a replacement for X-ray film, it can be used with any conventional source of radiation. A
typical diagnostic X-ray system using the present invention also includes means for storing, transferring and processing the video signal to produce clinical images useable by a radiologistO
Thus, in accordance with one broad aspect of the invention, there is provided a multilayered detector apparatus comprising: a first conductive layer; a photoconductive layer thick enough to maximize the quantum efficiency of the detector apparatus when the detector apparatus is exposed to radiation of known energy, said photoconductive layer being :j, integrally affixed to and in electrical contact with one side o~ said first conductive layer; a transparent insulating layer affixed to said photo-conductive layer; and a transparent conductive layer integrally affixed to said insulating layer.
In accordance with another broad aspect of the invention there is provided a method of recording and reading out a latent image comprising:
exposing a multilayered detector apparatus whose photoconductive layer has no surace potential to a modulated radiation flux capable of producing electron hole pairs, said photoconductive layer being biased by an electric field during said exposure, whereby a modulated surface charge is placed on the photoconductive layer; scanning said exposed detector with a photon beam whereby said modulated surface charge is at least partially discharged; and - measuring the charging potential of said discharge as a function of timeO
In accordance with another broad aspect of the invention there is provided a method of impressing a uniform surface charge on a multi-; layered photon detector having sequentially stacked in plain parallel a first conducting layer, a junction layer, a photoconductive layer, an insulating layer, and a transparent conductive layer comprising: connecting a high electric potential across the first conducting layer and the transparent conductive layer; storing the detector in the dark; disconnecting the source of external electric potential; and electrically connecting said first conducting layer to said transparent conducting layerO
According to another broad aspect of the invention there is provided an apparatus for reading out the latent image stored as variations in surface charge on a photoconductive layer in a multilayered photon detector apparatus comprising: a light-tight housing; a holder capable of receiving said detector at one end o said housing; a laser producing a thin - 6a -S~
beam of light located within said housing; said laser being pulse modulated in a recurring pattern of 5 nanoseconds to 5 microseconds of "on" time followed by 5 nanoseconds to 10 microsends of "off" time; scanning means for directing said beam of light in a regular raster pattern over said detector's photoconductive layer; signal acquisition means operably connected to said detector for measuring the variable discharge potential flowing in said photoconductive layer as it is scanne~ by said light beam; display means responsive to said signal acquisition means for displaying image information : contained in said variable discharge potential.
According to another broad aspect of the invention there is provided a mass screening system for obtaining radiographs comprising: a source of x-rays; a light-tight housing spaced apart from said source and adapted to permit a patient to place the body part being x-rayed against the side of the housing proximate said source; a multilayered photon detector apparatus mounted in said housing proximate said source, the first conductive layer of said detector being covered with an insulating layer and facing said source; means for scanning the inner photoconductive layer of said detector with a thin beam of light; control means operably connected to said x-ray source and said scanning means for sequentially exposing said detector to x-rays from said source after their passage through a patient and then scanning said thin light beam in a regular raster pattern over the surface of said photoconductor; signal acquisition means operably connected and responsive to said detector for reading out the latent image on said detector while it is scanned by said light beam; video display means connected and responsive to said signal acquisition means for displaying the latent image readout of the detectorO

- 6b -~5~ 7 BRIEF DESCRIPTION OF DRAWINGS
-FIGURE 1 is a greatly enlarged cross-sectional view of a portion of one embodiment of the multilayered photon detector apparatus taught by the present invention;

~7~ 7 FIGUR~ lA is a schematic electrical diagram illustrating the electric circuit analog of ~he structure shown in Figure l;
FI~:;t~E 2 is a view of the structure shown in Figure 1 being flooded wi~h photons;
FIGUR~ 2A is a schematic showing the ~lectric circuit analog of Figure 2;
FIGURE 3 is a view of the detec'cor ~tnlcture after it is charged, Plooded with pho-tons and the surface charge has been redistri buted;
FIGURE 3A i~ the electrical schematic analog of the detector as il: i~ shown in Figure 3;
FIGURE 4 illustrates the detector ~truc-ture o a preferred embodiment of the present inventiola as it is used in an X-ray system;
FIGURE S is a greatly enlarged schematic cro s-sectional view of a portion of Figure 4 illustrating the effect of a modulated X-ray flu~c on the detector;
FIGIJR~ 6 is a schematic view of the detector graphically illustrating the change in detector ~urface harye caused by X~ray expo~ure;
FI~URE 7 is a schematic view of the detector apparatuY taught by the present invention being read out by a thin, ~canning photon bea~, an output wave for~ of ~he video electric signal is illustrated together with a schematic representa-tion of the surface charge of the detector;
FIGURE 8 i~ a highly enlarged schematic cross-sectional view of a small portion of the detector structure ~hown in Figure 7 illustrating the electron hole production mechanism irl the photoconductor layer used by the present inven-tion;

~5~07 FIGURE 9 shows a partially cut-away v.ie~
of an apparatus adapted to practice the preferred em~odiment of the present invention;
FIGURE 10 is a simplified diagram show-ing the major parts of the apparatus shown in Figure 9;
FIGURE 11 is a schematic block diagram illustrating a diagnostic X ray system constructed according to a preferred embodiment of the present invention;
FIGURE 12 shows a cross-sectional view of a clinical apparatus for conducting mass chest radiographic screening using the present inven-tion;
FIGURE 13 is a highly enlarged schematic cross-sectional view of an e~bodiment of the present invention used in the apparatus sho~n in Figure 12.
FIGURE 14 is a graph illustrating the theoretical maximum charge obtainable from an experimental detector structure per unit area of the detector as a function of the voltage applied across its photoconductive layer. Figure 14 also ~hows a plot of specific points representing e~perimental results from tests run on this ex-perimental detector structure for a given mylar thickne~s and selenium thicknes~.
FIGURE 15 is a graph illustrating the voltage across the selenium layer of a theoretical detector in kilovolts as a function of the value of C2, in farads, for that detector.
FIGURE 16 is a graph illustrating the charge, in coulombs collected by the experimental detector structure per unit of exposure as a function of total exposure. The values plotted in Figure 16 were obtained using a sakalite shutter;

9 ~15~

FIGURE 17 illustrates the same informa-tion as Figure 16, but the data was obtained using a PVC shutter;
FIGURE 18 is a graph showing the effi-~iency of the present invention, as expressed in coulombs of charge obtained per roentgen of expo-sure, plotted against ~upply voltage for various levels of total exposure. This figure illustrates the increased efficiency of the present in~ention at low radiatio~ levels;
FIGURE 19 i~ a graph that plots the total charge collected by an experimental embodi-ment of the present invention as a function of applied voltage across its photoconductiJe layer.
Figure 19 illustrates increase in latitude of the present inventionls detector that is observed as applied voltage across the photoconductor is increased;
FIGURE 20 is a functional block diagram of an experimental prototype system of the present invention.
FIGURE ~1 is a schematic diagram showing a portion of the detector structure u~ed as a radiation exposure detector automatically timing the exposure.
FIGURE 22 is an electrical ~chematic showing the reversed biased mode of detector operation.
FIGURE 23 is an electrical schematic of the preamplifier used in experimental sy~tem 3.
FIGURE 24 is a schematic diagram of the X-position interface module used in experimental system 3.
FIGURE 25 is the characteristic curve of the detector structure.
.:

-10~ 5~7 BEST MODE FOR CARRYING OUT THE INVENTION
-In Figure 1, multilayered photon detec-tor apparatus 10 has first electrode 12 conduc-tively connected to a first conductive layer 14.
A photoconductive layer 16 is in physical and electrical contact with plate 14 which may be made of aluminum or any other conductor. An oxide layer 11 may act as a blocking contact ~etween layer 16 and plate 14. Layers 14, 16, and 11 may be provided by using a conventional xeroradiogra-phic plate. Transparent insulating layer 18 overlays and may be integrally affixed to selenium photoconductor layer 16. A transparent conductive layer 20 may be integrally affixed to and overlies insulator 18. These layers may be made by vapor deposition or by adhesively bonding the individual components together. Layer 20 is electrically connected to lead 22.
DISCUSSION OF EXPERIMENTAL SYSTEM #l The experimental plates used to test ~he present invention as early as late-1975 were made from conventional xeroradiographic plates. These plates are made for mamography by the Xerox Com-pany. To make the present invention's detector~ a plate is first cut to the correct size and then covered with mylar. The conductive coating, which is either Nesa glass or a few angstroms of gold, is placed on the mylar.
In the preferred embodiment of the present in~ention discussed in this section of the speciication, the aluminum backing plate 14 is approximately 1/10 of an inch ~hick and the layer of amorphous selenium 16 is approximately 150 microns thick. The physical properties of sele nium are listed in Table I. The transparent insulator 18 is mylar. The transparent conductor $5;~7 20 may be Nesa glass, a thin film of metal deposi-ted directly on the transpar~nt insulator 18, or a plastic film with a conductive coating, i.e., gold covered mylar. The entire structure 10 may be macle by depositing successive layers of selenium, mylar and a thin film of metal onto an aluminum plate. Assembly may be accomplished by vapor deposition, sputtering, or any other technique useful to deposit even thickness films. This technology is well developed in the art of semi-conductor electronics and glass manufacturing.
The thicknes~ of the selenium layer must be selected to maximize quantum efficiency of the detector. This optimum thickness will be a func-tion of the photoconductor's characteristics, the potential at which the detector is operated and the energy of the X-ray photons or other particles to which the detector is exposed that act to discharge it.
Basically, the thicker the selenium, the more it interacts with a given energy of exposing radiation and the more elec~ron-hole pairs a given quantity of radia~ion produces. Conversely, as the selenium layer is made thinner the electric field acting on these electron-hole pairs ~ecomes stronger ~the same potential over less distance).
Thus a very thin layer of selenium would not interact with the exposing radiation enough to produce electron-hole pairs while a very thick layer of selenium would result in the prvduc~ion of lots of electron-hole pairs, but they would all recombine when the exposure stopped.
The optimum thickness of the photocon-ductor layer of the detector will depend on the characteristics of the pho~oconductor and the energy of the X-ray photons it is designed to A~ 3~

sense. In the e~perimental embodlments of the present invention applicants have found that from one hundred microns to four hundred microns thick-ness of amorphous selenium is optimum for the X-ray photon energies commonly used in diagnostic radiology~
There are several facts the inventors discovered experimentally that should be men-tioned.
When sPveral experimental prototype detector structures were built under laboratory "clean room" conditions they worked poorly.
Regular aluminum backed selenium~xeroradiography plates covered with gold covered mylar plastic and assembled with optical cement under less than ideal conditions work very well.
It appears that a very thin aluminum oxide layer between the sel~nium and the alumin~m acts as a blocking contact, i.e., a diode, to retain the positive charge on the surface of the selenium. This blocking layer has a blocking potential that must be overcome for current to flow through the contact.
Also, when the experimental detectors built by the inventors were scan~ed fast, a higher signal strength output was obtained than when they were scanned slowly. Since the light intensity was the same, the faster scan was predicted to result in-lower signal strength. Applicants cannot yet explain this phenomena, but, by pulse modulating their light source for between ~ nano-seconds and 10 microseconds on and off, this ~ffect can be used to increase signal strength from the present invention.
Finally, repeated use of the prototype plate resulted in the development of ~'artifacts", ~13~

i.e., lines and trash on the image. Repeated use also caused an overall loss in detector sensiti-vity. It was accidentally discovered that heaking the prototype plate for a short time with a heat gun used to shrink plastic tubing removed these artifacts and otherwise generally restored the detector's performance.
In Figure 1, R1 represents the resis-tance of the photoconductive layer when it is flooded with light. R2 represents the resistance of the photoconductive layer when it is in the dark. C2 represents the electrical capacity manifested by the charge separation acros~ the transparent insulator 18. One charge polarity resides on the transparent conductor 20 and ~he other on the surface o~ selenium, which is in immediate contact with insulator 18. Cl repre-sents the electrical capacity of the detector measured between the aluminum conductor 14 and the selenium surface 16. The selenium is thus the dielectric material of Cl.
Figure lA shows an electrical schematic illustrating an electronic analog of detector sandwich structure 10 shown in Figure 1. Rl, R2, Cl and C2 are shown schematically connected in Figure lA as electrical symbols. Switch 24, which i~ shown open, i5 used to represent the photocon-ductive nature of selenium layer 16 of Figure l.
Selenium has a dark resistance of approximately 1016 ohm-centimeter. A portion o this resistance is caused by a blocking contact ormed at the Se-Al interface. When photons strike t~e photo-conductor its resistance is lowered because the photons create electron hole pairs that carry current. This lower resistance is illustrated schematically in the electrical analogs contained ~S~i507 ~14-in this specification by a closure of switch 24 leaving only residual resistance Rl, which repre-sents the forward resistance o the blocking contact iIl series with the resistance of the s~lenium layer when it is flooded with photons.
For a current to flow when the photoconductor is flooded with light the blocking potential of blockin~ contact 11 must be overcome.

-15~ 5~5 TABLE I
Physical ProE~_es o Selenium ~2,31 Atomic Number 34 ~ensity (g cm~3) 4.25 Dielectric Constant 6. 6 Resistivity at 20C. (~ cml lol3_1ol6 Thermal Conductivity at 20C.
(Wcm lK ) 2 x 10 Optical Band Gap ( 2V ~ 2 . 3 Photo Response Edge (~E ) 4600 K absorption Edge ( KeV ) 12 . 7 Mobility of Holes (cm2s lv 1 ) 0 .14 P~obility of Electrons (cm~s lv 1 ) 5 x 10 3 Energy for Production of Charge Carriers (eV) 7*

._______________ ___.___ * W = 2067 x Eg f 0.86 eV

in which Eg is the optical band gap ::

~l5$5~

Figure 2 illustrates detector 10 being flooded with photons 26~ Simultaneously a nega-tive high voltage, i.e., 2,000 volts, is applied to terminal 22 hence to transparent conductor 20.
Figure 2A, the electrical schematic analog of Figure 2, shows switch 24 closed by li~ht 26. The -2,000 volt potential, Vs, is impressed across electrodes 12 and 22.
Figure 3 shows the semiconductor detec-tor sandwich 10 after light 26 has been exting-uished and leads 12 and 22 shorted together. The resulting positive surface charge on the amorphous selenium layer is illustrated diagrammatically by dotted line 28. This surface charge is uniformly distributed over the entire surface.
Figure 3A is Figuxe 315 electrical analog. The detector is in darkness, so switch 24 is illustrated as open. Diode 15 and battery 13 represent the blocking contact ~nd potential, respectively, of blocking junction 11. The elec-tric charge originally present on capacitor C2 has redistributed so that a portion of that charge is present on capacitor Cl, the exact portion bein~
dependent upon the ratio of Cl to (Cl + C2~.
Figure 4 shows the charged detector illustrated in Figure 3 used as an image receptor structure for an X-ray image. Uniform X-ray flu~
30 is generated by a convenient source of radia-tion, such as an X-ray tube, not shown. The detector will work with any radiation so~rce capable of generating electron hole pairs in the photoconductor. This uniform photon flux encoun~
ters and interacts with object 32, which may be any object of interest. Object 32 is placed directly over detector 10. For simplicity, objec~
32 is represented as an oblate spheroid of uniform density.

~17- ~5$~7 Figure S shows a greatly enlarged sche-matic view of a portion o detector structure lO
of Figure 4. Modulated X-ray flux 34 from the radiation that has passed through object 32, creates electron-hole pairs 36 in selenium layer 16.
Figure 6 shows detector lO of Figur~ 4 after the X-ray exposure ~as been completed. The detector is now storing a latent image~ The modulated surface charge comprising the image is ~chematically illustrated by a humped dotted line 38. This dotted line represents the change in potential created by the electron-hole pairs qenerated by the X-ray exposure.
Figure 7 shows detector 10 having a latent image stored as a modulated surface charge 38. A thin beam of light 40 is shown scanning the surace o photoconductive layer 16 in a regular raster pattern. In the experimental system number 1 embodiment of the present invention, this thin ~canning light beam is produced by a ~e-Cd laser.
It should be understood that the photon beam need not be coherent. It may be of any frequency capable of creating electron~hole pairs in photoconductive layer 16 o detector lO.
Electrode 41 is connected to electrical ground and electrode 43 carries a video electric signal whose wave form is a function of modulated surface charge 38 in detector lO scanned by light beam 40.
Arrow 42 indicates the direction of movement of scanning light beam 40. Output wave form 44 indicates the voltage variation of the output video signal obtained by said beam's scan-ning the latent image.

~18-Figure 8 is a schematic, highly enlaryed cross-sectional view of a portion of the detector structure being scanned by light beam 40 of Figure 7. Light beam 40 penetrates the transparent conductor and transparent insulator to generate electron-hole pairs 36 in that portion of selenium layer 16 irradiated by the beam.
Functionally, detector 10 operates by placing a unifor~ surface charge on selenium layer 16 and then selectively discharging part of ~his surface charge by X-ray exposure to form a latent image.
As shown in Figure 2, when light photons 1Ood detector 10, selenium photoconductor layer 16 becomes conductive. I, as shown, a -2,000 volt potential is applied between ~he aluminum backplate (at ground) and the transparent conduc-tor 20 ~at -2,000 volts potential~, then the detector will charge as a capacitor. Figure 2A
illustrates how ~his charge is applied to the system. Light flood 26 increases conductivity in ~he selenium layer 16. The applied voltage Vs is

-2,000 volts. This causes a charge to build up across capacitor C2, which represents the capacity between the surface of the selenium in contact with the transparent insulator and the transparen~
conductor of detector 10. Capacitor C2 thu5 charges to potential Vs of 2,000 volts.
After capacitor C2 has charged to poten-tial Vs~ the light floo~ is removed and detec~or 10 is stored in dar~ness. In the absence of photons, amorphous selenium layer 16 becomes nonconductive and its dark resistivity in syner-gistic combination with blocking contact 11 pre-vents the surface charge on the selenium from leaking off. This condition is illustrated by Figures 3 and 3A. After detector 10 is in dark-ness, terminals 22 and 12 are shorted together.
This causes the electric charge on capacitor C2 to redistribute between capacitor C2 and Cl, each of which is ~hen charged to a potential of one-half Vs, i.e., 1,000 volts if C1=C2. Capacitor Cl represents capacitance between the surface of the photoconductive layer 16 and the al~inum backing 14 . This 1,000 volt surace charge is distributed uniformly over the selenium layer's surface. This surface charge is maintained across the selenium layer by the high dark resistivity of the selenium in conjunction with the now reverse blased block~
ing junction at the Al Se interface. The effec-tive blocking potential of this junction has been e~perimentally determined to be about 150 to 300 volts in the experimental systems discussed below.
Resist~nce Rl, representing resistance oi-. the selenium layer when it is e~posed to light, is relatively low compared to its dark resistance R2.
Each photon, striking the photoconductor depending on its energy, generates a specific number of electron-hole pairs within photocon-ductive layer 16 (see Table II~. Each electron hole pair discharges a portion of the surface charge at the spot it is generated.
Figure ~ illustrate~ how this effect is used to impress a latent image on the detector.
Figure 4 is a cross-section schematic view of the photon detector structure taught by the present invention being used as the image receptor in an X-ray syste~.
A uniform flux o X~ray photons 30 is modulated, i.e., partially absorbed, by its pass~
age through an object being X-rayed 32. The modulated X-ray flux then strikes detector 10.

5iO7 Detector 10 has a 1,000 volt surface charge, as was illustrated by charge 28 in Figure

3, impressed on selenium layer 16. As the X-ray photons strike the selenium layer, they generate electron hole pairs. For monochromatic X-rays the number of electron hole pairs generated is a direct function of the number of X-ray photons striking the selenium detector layer.
Some of the X-ray photons in uniform flux 30 are absorbed by object 32. Thus the modulated flux striking photoconductive layer 16 contains information about the internal structure of the object being x-rayed. This infor~ation is contained in the number of photons striking each portion of the detector.
Fi~lre S illustrates how this modulated X-ray flux creates a modulated surface charge on the surface of the detector. Modulated X-ray flux 34 generates electron-hole pairs 36 in selenium layer 16 of detector 10. The number of electron hole pairs generated at each point on the surface of the detector is a function of the number of X-ray photons impinging on the photoconductive layer. Each electron hole pair 36 discharges a portion of the surface charge impre~sed on the photoconductive layer at the point where it is generated. The greatest number of electron hole pairs will be generated where the X-ray photons from uniform flux 30 strike ~he detector without any absorption from the object being x-rayed. A
lesser number of X-ray photons will strike the photoconductive layer under the object being X-rayed. The radio-opacity of khe object being X-rayed is thus reproduced in the surface charge of the detector ~tructur~ after X-ray exposure.

5(r7 -21~

Figure 6 schematically illustrates the detector structure's modulated surface charge after the X-ray exposure described in connection with Figures 4 and 5.
The surface charge is lower where no object absorbed X ray photons. The object being X-rayed, which is assumed to be uniformly opaque to X-rays, absorbs a portion of the uniform X-ray flux. This results in the generation of fewer electron hole pairs under the object and a higher surface charge on the detector under the object being X-rayed. This is represented by modulated surface charge dotted line 38.
Figure 7 illustrates schematically the readout method used to extract an electric video signal from the modulated surface charge which forms the latent image on a detector structure taught by the present invention.
The detector structure is kept in dark-ness and a thin beam of light, preferably gene-; rated by a helium-cadmium laser, is scanned in a regular raster pattern across the surface of photoconductive layer 16.
As the scanning li~ht beam 40 moves in direction illustrated by arrow 42, i-t produces a small moving spot on the surface of photoconduc-tive layer 16. The size of this spot determines the resolution of the final image. It is there-fore desirable that this spot size be kept small.
As laser beam 40 scans the surface of photoconductive layer 16, it generates electron-hole pairs as is illustrated in detail by Figure 8. These electron-hole pairs are mobile within the photoconductive layer and discharge a portion of the surface charge. In the preferred embodi ment of the present invention the electrons move ~, ,1 -~2-toward the positively charged selenium surface of the detector sandwich structure 10. The voltage drop produced across the r~sistor Connec~ed be-tween ground connection 41, which is attached to transparent conductor 20 ~d video output elec-trode 43, which is attached to alumlnum conductive backplate 14, will be a unction of the intensity of the surface charge at the point where the laser beam gener~tes the electron-hOle pair.
Scanning laser beam 40 thus produces a modulated electric signal 44 at output electrode 43. The voltage of this o~tput electric signal will be a function of the surface charge present at the spot where the laser beam strikes ~he photoconductive layer of the detector. The cur-rent present in the output circuit is a function of the frequency and intensity of the scanning light beam and is a further function of the speed with which the light beam 5cans the surface of the photoconductor. Video signal 44 can be electro nlcally processed to produce an image that repro~
duces the latent image found in the surface charge of the photoconductive layer of the detector.
Depending on the intensity of the sur-face charge, the beam scanning speed, and the frequency and intensity of the light beam used, the surface charge may be ~epetitively scanned several times by the beam of light.
Table II lists the values for the thick-ness of the selenium layer, the X-ray photon energy, the fraction of this energy absorbed by the selenium layer, quantum conversion between X-~ay photons and electron-hOle pairs, dark resis~
tance of the selenlum and the total receptOr area of detector 10 used in cal-,ulating the oper~ting parameters of a s~nple det~Ctor Constructed ~c-~5~

cording to the preferred embodiment of the present invention.
TABLE II

Assumed Values Thic~ness of Selenium Layer lO0 microns Energy Radiation 21 keV
.

Absorbed Fraction of photons 85%

Quantum Conversion 3000 electron/
photon Surface Voltage lO00 V

Photon Flux/Roentgen 5 ~ 109 cm 2 Dark Resistivity lol6 n cm Total Receptor Area 560 cm2 Table I I I lists the calculated capacity of the detector sandwich structure, the charge density present in this structure when the surface potential is 1,000 volts, the number of elementary charges present per square centimeter in the structure and the dark resistance and dark current of the detector at a thousand volts charge.

TABLE I I I

Calculated Values Capacitance 5 8 1o~llF/ 2 Charge Density at 1000 Volts 5.8 x 10 8Coul/cm2 Number of Elementary Charge 3.6 x 10 el/cm Dark Resistance 1014 Q /cm2 Dark Current at 1000 Volts 10 llA/Cm Using the values rom these tables it is possible to calculate operating parameters for a typical detector system constructed according to the preferred embodiment of the present invention.
If detector 10 has an area of 560 s~uare centimeters and is exposed to uniform flux of 21 keV X-rays resulting in an exposure of Np X-ray photons per unit area, then the total number of electron hole pairs generated will be 3,000 times Np. Information theory reguires that three times as many electron hole pairs be generated as are present at the statistical noise level of the system for the latent image to be detectable.
There are approximately 5 times 109 photons per square centimeter per roentgen of X-ray exposure at 21 Kev. Thus the minimum de-tectable latent radiation exposure tha~ will produce a detectable latent image in the selenium sandwich structure taught by the preferred embodi-ment of the present invention (for a 560 square centimeter detector) is approximately 23 micro roentgens per exposure. This may be thought of as ~, .

~5~7 ~25-the theoretical lower limit of exposure to gene rate a 10 line pair per millimeter image with the present invention.
Turning now to a practical example, if the X-ray exposure of a patient scan is 100 mR and at the thinnest section of the X~rayed object 50%
of this radiation is absorbed by the sample, then e~posure at the detector at the brightest portion of the image amounts to 50 m~ while the lowest theoretical detectable dose, as was discussed above, amounts to 23~R. This theoretically yields a latent image represented by modulation of the surface charge present on the detector at a ratio between the brightest and the darkest areas of the image of approximately 2,000.
The example discussed above shows that the detector structure taught by the present invention is theoretically capable of recording an image using a selenium photoconductive layer with a resolution of 10 line pairs per millimeter and a brightness range of over 2,000 after a total X-ray exposure of only 100 m~. An example of how this latent image can be read out of the detector follows.
Figure 9 shows a partially cut-away view of an apparatus capable of reading out the image whose generation was discussed above.
Light-tight housing ~6 contains a light source 48 aligned so as to project a light beam 50 onto ~he front of a scanning means 52 which may be a rotating multi-sided mirror. Mirror 52 is mounted on an axis 54 which is operably attached to a scanning motor 56. The mirror axis and scan-ning motor are affixed to a platform 58. This platform is mounted on an axis 60 which is ortho-gonal to axis 54. A~is 60 is mounted at one end . , $~~

to first upright support 62 and its other end to second upright support 64. The end of axis 60 is swingably mounted in second upright 6~ and is operably attached to stepping motor 66.
The entire scanning means comprising the mirror and associated positioning components is available from Texas Medical Instruments, Inc., 12108 Radium, San Antonio, Texas 78216.
Mirrox 52 and its associated scanning mechanism is located at one end of housing 46. A
multilayered photon detector apparatus 10 is removably inserted through a light tight opening 68 into a holder at the other end of housing 46 such that deposited transparent conductive layer 20 faces toward mirror 52.
Light source 48 is preferably a Helium-Cadmium laser such as a Liconix model #402 laser with an optical modulator. This laser produces a beam of intense light at approximately 4,400 angstroms.
Scanning motor 56 rotates multi-sided mirror 52 on axis 54 to cause ligh~ ~eam 50 to scan horizontally across the surface of detector 10. This causes spot 70 to intersect the selenium photoconductive layer as was discussed in connec-tion with Figures 7 and 8 above. Each time spot 70 moves from the left to the right side of detec-tor 10, stepping motor 66 moves platform S8 thLough sufficient arc to deflect spot 70 vertically 1/20th of a millimeter. This stepping-scanning function may be controlled mechanically or electri cally. By convention, spot 70 begins scanning the surface of detector 10 at its upper left hand corner. After raster scanning the entire surface of the detector, the scanning mechanism may be , :

~5~

programmed either to turn off or to rescan the plate.
Figure 10 is a simplified schematic view of the scanning readout mechanism shown in Figure 9. Light beam 50 from laser 48 reflects off of the polygonal surface of multi-sided mirror 52 as that mirror rotates on axis 54. This causes light beam 50 to generate flying spot 70 which moves across the surface of detector structure 10. As was discussed in connection with Figures 7 and 8, above, this causes a video signal to be generated across the detector structure.
Theoretically, photons from light source 48 have a wave length of approximately 4,400 angstroms. The guantum yield of these photons and selenium approaches unity when field strength nears 105 volts per centimeter. In a hundred and fifty micron selenium plate, such as is used in the preferred embodiment of the present invention, this corresponds to a thousand volts surface potenti al .
It is possible to pulse the laser to decrease the scanning time required to obtain an image from the detector structure. In the present example, the laser beam may be pulsed for a 100 nanoseconds period with 3 to 4 microsecond spacing between pulses. This illuminates each image element sufficiently to read out a latent image stored in the detector. The practical advantage of such a regime is to permit much shorter samp-ling times. It may also result in higher signal strengths.
Figure 11 is a block diagram of a radio-graphic X-ray system taught by the preerred embodiment of the present invention. Laser 72 produces a small intense beam of light 74 which is -28 ~5~7 expanded by optical objective 76 and lens~s 78 and 80 into a reasonably wide parallel beam 82.
Focusing mirror 84 re1ects beam 82 on the reflec-tive surface 86 of scanning mechanism 88. Scan-ning mechanism 88 is substantially the same as the scanning mechanism discussed in connection with Figure 9 above. This scanning mechanism may be any apparatus capable of moving the laser beam over the detector and film. For example it may be a set of computer controlled mirxors or hologra-phic optics.
Beam 82 projects a small flying spot 90 onto the surface of detector structure 10. ~etec-tor structure 10 was discussed in detail in con-nection with Figures 1 through 8, above.
Detector structure 10 is electrically connected by lines 92 and 94 to cooled amplifier 96. Amplifier 96 may be a low noise amplifier.
Amplifier 96 is connected by line 98 to lines 100 and 102 which electrically connect the output of cooled amplifier 96 to signal processor 104 and second signal processor 106, respectively. Signal processor 104 is connected by line 108 to beam modulator 110. Lasex 112 produces an intense beam of coherent light 114 which is modulated by beam modulator 110 and spread by objective 116 in lenses 118 and 120 to coherent modulated beam 122.
Modulated beam 122 is focused by focusing mirror 124 onto a second mirror surface 126 of optical scanner 88. This surface may be another surface of the same scanner or may be a separate optical scannin~ system.
Mechanical movement of scanning system 88 causes beam 122 to form flying spot 128 which scans the surface of recording medium 130. This process allows the very low intensity latent image -29- ~ 5()7 on detector structure 10 to be el~ctrically ampli-fied by cooled amplifier 96 and signal processor 104 and then to be rewritten as an intensified image on a photographic or xeroradiographic plate 130.
The electrical output of cooled ampli-fier 96 also is fed to signal processor 106 by lines 98 and 102. The output of signal processor 106 is con~ected by line 132 to a digital computer 134. Computer 134 is used to digitally store and manipulate the information content imparted to it by the electrical signal produced by cooled ampli-fier 96 by way of signal processor 106. The images may be stored on magnetic tape or disc files and can be manipulated within the computer by algorithms for image edge enhancement or pat~
tern recognition for automated diagnosis.
The output of signal processor 106 also goes by line 136 to mass storage system 138.
Mass storage system 138 contains a high . . . _ . . .
resolution display t~be 140 which produces an analog image 142 which is focused by focusing optics 144 onto film plane 146 of a mass film storage system 148. This mass film storage system may be a 35 or 70 mm cassette system.
The type of radiographic image proces-sing and storage system described in connection with Figuxe 11 is especially useful for inter-facing mass radiographic data acquisition equip- -ment with the central computing facilities of a large hospital complex. Digital storage of the radiographic images allow the data to be accessed by a remote radiologist with speed and precision.
Computer-based pattern recognition algorithms allow inexpensive gross screening of large patient populations for radiographic anomalies. The ~30-system's ability to rewrite information obtained at very low radiation dosages onto conventional xeroradiographic plates or films permits the system to protect the patien~ while interfacing with presently existing radiographic data storage fonmats.
As will be discussed further below, the radiographic data comprising the latent image on detector structure 10 may be read out in real time to produce a video image which may be studied by ~he radiologist.
Figure 12 shows a mass screening system constructed according to the preferred embodiment of the present invention. The embodiment shown in Figure 12 could be used for real time read out of chest films in a mass screening program. X-ray source 150 produces a uniform flu~ of X-rays 152.
Uniform flux 152 passes through and is modulated by patient 154. The modulated X-ray fl~x impinges onto multi~layered photon detector appara~us 156.
Figure 13 shows a highly enlarged cross-sectional view of a portion of detector sandwich structure 156 used in Figure 12.
Detector structure 156 is like detector structure 10 described in Figures 1 ~hrough 8, above, except that it is positioned so the modu-lated X-ray flux impinges on the selenium photo~
conductive layer after it passes through tAe aluminum backplate. Additionally, a thin insula-ting layer 158 has been added to the outer surface of the aluminum support ~tructure to electrically insulate the aluminum layer from patient 154.
Detector sandwich structure 156 is mounted within light tight housing 160. Housing 160 also contains a means for scanning the detec-tor structure with a thin beam of light, i.e., 3i~LS~507 laser scanning system 162 which projects light beam 164 in a raster pattern onto the back side, i.e., the conductive transparent coating side, of detector 156. Base 166 of housing 160 contains control electronics 168 and signal electronics 170. The entire housing and base may be mounted on legs 172 to raise detector structure 156 to chest height of patient 154.
Control means 168 comprises electronics necessary to control the scanning pattern of laser scanner 162 so as to cause light beam 164 to scan the photoconductive side of detector 156 in a regular raster pattern. The control electronics also controls X-ray source 150 and synchronizes exposure and readout operations.
Signal acguisition means 170 comprises electric amplifiers connected to the video output of detector 156. Signal electronics 170 amplifies the detector output and provides a video output capable of operating video display means 174, which may be a high resolution video display monitor.
Operationally, the mass screening system shown in Figure 12 is a small portable unit.
Patient 154 steps up to the unit and presses his chest against thin insulating layer 158 over the aluminum back plate of detector structure 156.
X-ray source 150 is then turned on by the control means and irradiates the patient with under 100 mR
of X-ray radiation. As is shown in Figure 13, this modulated X-ray flux penetrates thin insula-ting layer 158 and the aluminum backplate of detector 156. The X-ray flux then genera~es electron hole pairs in the selenium detector structure as was discussed in connection with Figures 2 through 6, above. The effect of X-rays ~32- ~5~7 being absorbed in the selenium with consequent neutralization of surface changes is a displace-ment current that flows as C2 redistributes its charge over Cl. When this current is integrated over time it will reach a prese~ value. Con~rol circuitry will then terminate the X-ray exposure.
Use of such circuitry insures images of equivalent quality regardless of ~he thickness of the patient.
The above device or operation is called "automatic photo~timing" or "automatic exposure control".
Referrlng again to Figure 12, as soon as the exposure is completed, control electronics 168 causes laser scanner 162 to scan light beam 164 across ~he surface of the selenium photoconductive lay~r in a regular raster pattern as was described in connection with Figures 7 through 10, above.
This causes detector 156 to produce a video signal containing image information. This video signal is fed to signal electronics 170 where it is amplified to provide a video output to TV monitor 174.
Such a system may be used ~o make a clinical radiograph of any body part, including-breast, chest, head, etc.
The detector i~self, ~eing a replacement for film in a radiographic system, can be used with intensifying screens. One embodiment of the detector structure would use a phosphor, prefer ably a high Z rare earth phosphor, in place of insulating layer 18 in Figure l. The X-rays striking the phosphor would generate light which would create ion-hole pairs in photoconductive layer 16.

-33- ~5~

DERIVATION OF THE CI~ARACT~RISTIC CURVE OF
THE DETECTOR
This section refers to the derivation of the curve shown in Figure 25.
When the experimental system is exposed to light, a total charge of QL coulombs will flow in the external circuit where QL = 2VSC22 COU1/PiXe1 (1) cl+c2 Exposure to X-radiation prior to such a light exposure would simply reduce QL proportional to the X ray exposure dose.
One may compute the charges placed in motion due to absorption of X-ray photons by first defining the photogeneration efficiency after Fender = d E (ev i x Volts) (2, where ~ is the energy deposited within the sele-nium in ev due to absorbed photons, N is the number o ions which neutralize the charge on the surface of the absorber, and E is the average electric field across the absorber. Also we note, n = QxA and dn = A dQ (3) e e where Qx is the surface charge neutralized in coulombs per square centimeter, A the area of the absorber in s~uare centimeters and e the electron-ic charge in coulombs/ion-pair. The energy absorbed may be calculated as ~ ~

_34~ 7 ~ = fkXA and d~ =fkAdX (4) where f is the fraction of X-ray photons absorbed in the selenium, k is the energy fluence in air per roentgen exposure and X is the exposure in roentgens. Also, since the electric field is that which exists within the selenium, E = Q 1 (5) t ldl where Q*l is the instantaneous charge existi~g across the selenium, Cl the capacitance of the 6elenium layer, and dl the thickness of the sele-nium. Substituting (3~4) and (5) into (2~ we have rl = eQ*1 dX
Cldl dQx (6) From ~1) we may express Q*1 as Q*l ~ 2VsClC2 _ QXCl Cl +C2 Cl+c2 substituting in (6), we have the differential equation, dQx + fke Qx ~ 2kfeC2Vs = 0 ~7) dX d~(Cl+C2 ~(Cl+C2) d the solution of which is Qx = 2C2Vs (1 - exp ~ _ fkeX ~ ~ ~8) rl dl ( Cl C2 ) if QR QX (C2 ) (g) Cl+C2 then the total chaxges placed in motion when illuminating a pixel which has absorbed x roent-gens of X-ray is, QSig = QL ~ OR ( 10 ) from (1) and (10), Qsig = 2v5c2 - 2VsC2 (1 - exp ~ fkeX ~ ) (11) Qsig = [2V c2 exp( - ~x)3 ~12) s 2 Cl+C2 where ~ = e rl dl ( Cl+C2 ) E~uation (12) is of the form described by Boag in which he states that the radiographic discharge of electrostatic plates is e~ponential.
Figure 19 is a plot of QR versus Vs for various doses of X-radiation. From such data we may solve equation (8) for ~, the photogeneration efficiency. From Figure 19 we also note the emperical data predicts a loss of charge which may be due to recombination; however, it may also be indicative of deep hole traps within the selenium that establish a residual potential below which the system cannot be discharged.

~5$~

DESCRIPTION AND DISCUSSION OF ~ETHODS
OF CHARGING THE DETECTOR
_ _ Charqin~ Method ~1 To review briefly, the semiconductor san~wichlike structure, illustrated by Fisures 1 and lA above, appears as a pair of capacitors in series. C2 is the capacitor formed in the experi-mental system by Nesa conductive glass and the surface of the selenium pro~imate the Nesa. A
mylar insulating layer acts as a dielectric. Cl is the capacitor formed by the surface of the selenium and the aluminum substra~e, the selenium photoconductor acting as ~he dielectric. Because photoconductors are not dielectrics when they are illuminated, Cl will exist only when it is in the dark. This ignores such things as deep hole traps, dark currents, etc., but they will be discussed in turn.
Referring to Figure 1, when a voltage is -----applied between terminals 22 and 12, a current will flow charging capacitors Cl and C2 to volt-ages Vl and V2 respectively, where:
VS = Vl + V2 (1) In which case:

V2 = VS Cl -Cl + C2 (2) Where Vs is the supply voltage.

and Vl = V
(3) If the selenium layer is illuminated while there is a potential between terminals 22 . ~ .

~5~ C)7 and 12, cap citor Cl becomes a con~uctor and allows additional current to flow to C2. This additional charge Ql is the charge initially residing on Cl. That is, since Ql = ClVl (4~
substituting (3~ into (4), ClC2 Ql = Vs ~l+C2 (5) The initial voltage across C2 is deter-mined as in (2). The increase in voltage across C2 due to Cl becoming conductiYe is:
Ql VsC2 V2 = Cl Cl+C2 (6) thus the total voltage across C2 is now (2) plus (63 or .. Cl VsC2 - V2 = VS Cl+C2 Cl~C2 = Vs (7) Because of (1), Vl is now found to be equal to zero. The charge across C2 is now the total Q or QT = VSC2 (8) If the illumina~ion is removed, this voltage distribution will persist until the poten-tial is removed and terminals 22 and 12 are con-nected together. C2 will now partially discharge into Cl resulting in an equal voltage appearing ~l~S~35~7 -38~

across Cl and C2 since they are now essentially in parallel. This voltage will be V paxallel = 5~total c total = V C = V = -V
s 2 1 2 Cl+C2 Note that Vl and V2 are equal, however, of opposite polarity.
It will also be noted that no supply voltage Vs is in the circuit during this redistri-bution of charge. The above operation has resul-ted in placing a charge on the surface of the selenium much as is accomplished in the Xeroradio-graphic procedure. In the present invention, however, the charge has been applied to a selenium surface that is physically inaccessible.
The system is now ready for exposure to X-rays. An integrating ammeter or a coulomb meter is placed in the circuit between Cl and R2 such that the current, or net charge movement due to radiation exposure may be measured. This flow of current is propor~ional to exposure and thus can be used to control the exposure. This is advan-tageous because it allows the exposure time to be controll~d by the amount of radiation actually reaching the detector.
Alternatively, the surface of capacitox C2, which is a thin conductive ilm, may be etched to form a small island as shown in Figure 21. In Fi~ure 21 coulomb meter 2101 may be connected between island electrode 2103 and the aluminum substrate 2105. During X-radiation exposure meter 2101 will accumulate a charge whlch may be used to _39_ ~ ~ 5~

photo-time the exposure. This is advantageous because regardless of the thickness of the patient, the X-ray machine will stay turned on until the correct amount of charge is collected by the detector, thus insuring a properly exposed ima~e.
Several of these isolated islands may be etched in the plat~ and used as exposure meters.
When the detector is exposed to radia-tion, electron-hole pairs are created within the seleniu~ which neutralize the charge across Cl.
As these charges are neutralized, the charge on C2 redistributes. This redistribution maintains the two capacitors at the same potential. Thus the total charge flowing through the external circuit, i.e., through load resistor R2, is the initial charge placed on C2 alone. From (9) we can obtain the voltage across C2, i.e., ~he total charge on C2 prior to X-ray exposure: ;

Q2 = C2Vs C2 Cl+C2 ( 10 ) Equation (10) is the total charge that will move if the system is not exposed to radia-tion. Should X-ray exposure occur to create a latent image, a portion, Qx~ of the charges on C
will be neutralized. The charge remaining on C2 will be:

Qsig = (QT ~ QX) C2 cl~c2 ( 11 Where QT = C2Vs as in (8). If QX ~ , then Equa-tion (11) becomes (10).

i~5~

This charge can be accumulated by a coulomb meter and would be a function of the number of electron-hole pairs generated by the X-rays absorbed in the selenlum. When the detec-tor is scanned by the laser beam, each pixel, i.e.
the area illuminated by the laser beam at rest, is sequentially discharged. Functionally, Cl is made conductive where the light shines. When Cl be-comes conductive, the charge on C2 can flow through the external circuit. The current which flows through the external circuit is a function of the latent image stored in the photoconductor.
As the laser beam scans across Cl, the IR drop appearing across resistor R2 is a video signal.
Charqin~ Method #2 Consider the same sandwich-like detector structure in a circuit configuration analogous to the one shown in Figure 22.
Structurally, three-position switch 2201 is connected to one side of the plate structure 2203 illustrated as capacitor Cl and C2 in series.
One side of coulomb meter 2205 is connected to the other side of plate structure 2203. The other side of coulomb meter 2205 is connected to one side of resistor 2207. The other side of resistor 2207 is connected to the positive side of battery 2209; directly to t~rminal 2211 and to the nega-tive side of battery 2213. The positive side of battery 2213 is connected to termin~l 1 of three-position switch 2201. Terminal 2211 is connected to terminal 2 of switch 2201. The negative side of battery 2209 is connected to terminal 3 of three-position switch 2201.
Three position switch 2201 is first placed in the position 1. The voltages across C

-41~

and C2 are the same as shown in Figure 1 and lA.
If the selenium is now illuminated, Cl becomes conductive as before and V2 = Vs as in ~7). If the illumination is now removed this voltage dis-tribution again persists. Moving switch 2201 to position 2 results in the charge on C2 being distributed over both Cl and C2 as before with V
= -V2 as given in (9).
If switch 2201 is moved to position 3, a voltage will exist across C2 which will be that ratio of Vs due to capacitance Cl and C2 less the voltage due to trapped charges (9), i.e., V - V C - V C
2 s 1 s 2 - . Cl+C2 Cl+C2 (12) or ~ 1 2 V J V ~Cl+c2 J

C +C 2C
- V Cl+C2 = Vs ( 2C2 ) 2VsC2 _ (13) V2 = VS Cl+C2 since Vl ~ ~2 = Vs we find Vl = 2Vs 2 (14 Cl+C2 that is, the voltage across the selenium is now twice that obtained in the other charging method #1.
Now the total charge on C2 is from (13) \
2VsC2 Q2 = C2 ~s ~ Cl+C2 J

~VsC2C2 ( 15 ) 2 s Cl+C2 Under these conditions if the ratio of C2~Cl+C2)is near unity, then V2 will be opposite in polarity to Vl as well as at a lesser poten-tial.
If we assume C2 = 10 Cl, the ratio C2 ~ 1+C2)= 10/11, also assuming Vs = lOOV, fro~
(14) .
Vl = 2 x lOOV x 1~/11 = 1~1.8 vol~s and Y2 = -81.8 volts Thus the 2 as shown in Equation (15) represents a charge opposite to that on Cl and ~hat of the voltage supply Vs.
Upon exposur~ to radiation and/or su~se-quent read~out by the laser, the total Qsig moving through the external circuit will be that residing on C2 initially, plus that required to charge C2 to a voltage of Vs in the opposite polarity. Thus Qsig = -Q2tQT
2Vs~2C2 + C~Vs - 'C2Vs ~ Cl+C2 orQ ~ 2V 2 C2 Cl+C2 (16) If the detector has been exposed to X rays then, Qsig ~ 2QT QX ) C2 (17) J Cl+C2 here, as before, QX are those charges neutralized by the electron-hole created in the selenium by absorbed X-ray photons.
In summary, use of chargé method #2 results in doubling the voltage across the sele-nium without doubling the voltage applied across mylar capacitor C2. This allows capacitor C2 to have a thinner dielectric and thus a higher capaci~
tance. Increasing the value of C2 relative to the value of Cl brings the fraction C2 ~ 1+C2~ne~rer to unity, which further increases ~he detector's signal output. A further advantage of doubling the voltage across the seleni~n is that the in-creased electric field strength decreases electron-hole pair recombination in the selenium and in-creases the efficiency of ion-pair collection.
This increases the efficiency of the detector.

_~4~ ~5~ 7 Increasing C2, or rather making Cl as small as possible, has two beneficial results:
A. Reducing the capacity of cl is accomplished by increasing the thickness of the selenium layer in the detector, which increases the detector's X-ray absorption efficiency.
B. Reducing Cl while using the highest possible value of C2 reduces the total capaci-tance of the detector, since Cl arld C2 are in series. This lower total capacitance in~
creases the scan speed that ~e invention can achieve. This is important because the prior art only teaches the segmenting of a plate into small sections to avoid this large capacitance.
CHARGING METHOD #3 It is also possible to use a detector wherein the selenium layer has high effective dark resistivity, but not a blocking contact, which is not charged prior to x-ray exposure. Tha~ is, detector whose photoconductive layer has no sur-face charge. In this method, an electric poten-tial is placed across the previously uncharged detector only during exposure to the x-rays. This procedure will result in a modulated surface charge conforminy to the radio-opacity of ~he object being x-rayed being placed on the photocon-ductive layer. The modulated surface charge may be read wi~h a scanning laser beam as described above.
EXP~:RIMENTAL SYSTEM #2 : The Ex~erimental Ap~ratus To evaluate the operational character-istics of the detector and readout means of the present invention, a model detector as in Figure 1 erL~

was built and mounted on an optical bench which contained a He-Cd laser, collimating lens and field stop. The C2 was formed of approximately 5 mil mylar plastic coated wi-th a few angstroms of gold, i.e., to where the surface resistance of the mylar is equal to 20 ohms per square (layer 20, Figure 1~. The mylar was bonded to the selenium layer with optical cement. The laser was pulsed via a pulse generator. Charge method ~2 was used as described above. The detector was loaded with various values of resistances in accordance with the applied voltage. An amplifier with a gain of 1000 was used to condition the detector's output signal prior to display on a storage oscilloscope.
A schematic of the amplifier is given in Figure 23. From photographs taken of the signals on the oscilloscope's screen the total area under the discharge curve was determined via planimeter to estimate the charge set in motion by the laser.
This procedure was repeated after exposure to measure exposure to X-ray radiation to determine the number of coulombs of charge discharged by the X-ray exposure.
Experimental Results Experiments were desi~ned to determine if detector and readout means of the present invention performed as predicted. Using Equation (17), the total possible signal, in coulombs per square centimeter, was calculated assuming Q - 0, Cl = 3.69 x 10 11 and C2 = 2.93 x 10 11 farads/
cm . Figure 14 is a graph of the number of cou-lombs theoretically predicted by such a model as a function of supply voltage applied across the detector. Also shown on Figure 14 are several experimentally measured values of charges col-lected from experimental system #2, which was constructed and tested in the experimental radio-logy laboratory of M.D. Anderson Hospital in ~ouston, Texas.
In experimental system #2 the selenium thickness was measured as 150 microns. Five mil mylar was employed as the second dielectric. All charges calculated in Figure 14 assumed an active area or pixel size of .3 cm2 and represent total ~ischarge of the pixel.
As can be seen from Figure 14, the correlation of calculated and measured charge collected i5 very good if one assumes a loss of 3.93 x 10 9 coulombs. This departure from the theoretically obtained value may be due to incom-plete discharge caused by the existence of a blocking contact at the selenium/aluminum inter-face. The fact that the emperical experimental data does not extrapolate to zero may also imply that as the plate nears total discharge, fewer charges are collected because more recombination takes place at lower field strength.
Figure 15 is a graph illustrating the electric field strength across the selenium layer of the detector as a function of mylar thickness, i.e. C2, for a given selenium thickness and vari-ous supply voltages applied by charge method #2.
This graph is useful in predicting the dynamic range of the system in coulombs for various combi nations of C2 and Vs. In experimental system #2, Cl is fixed at 3.69 x 10 11 farads/cm2 by the 150 micron thickness of selenium. Referring again to Figure 15, if C2 is 8xlO 11 farads/cm2 and Vs at 2000V, we find the voltage applied to the selenium will be 2509V, using charge method #2, and the dynamic range of the detector will be lxlO 7 coul/cm2. This means that for each square centi--47~

meter of plate illuminated, a total of lxlO 7 coulombs will flow in the external circuit. X-ray exposure to produce a latent image would decrease this total.
The detector's sensitlvity to X-ray exposure is of great importance. That is, how many coulombs of charge will be set in motion and collected per absorption of an X~-ray photon.
Figure 16 is a graph showing the coulombs of charge collected per roentgen exposure as a func-tion of total exposure ~measured in MAS (Milli-amperes X seconds) applied to an X-ray tube~.
The X ray system employed with experi-mental system #2 was a Siemens Mammomat designed for operation with a xeroradio~raphic system. The X-ray unit was operated at 44 kVp and had a half-value-layer ~HVL) of approximately 1.5 mm. of aluminum. The receptor was housed in a cassette made of l/16th inch PVC and had a Bakelite shut-ter.
Figure 16 shows that the sensitivity (Q/roent.) of the present invention is higher for higher applied voltages and that the invention is unexpectedly sensitive to low exposure levels.
The present invention's efficiency of collection, expressed in coulombs per roentgen, i5 much higher at low X-ray exposure levels than at high exposure levels.
Figure 17 describes the same data as Figure 16; however, the X-ray detector cassette is equipped with a 1/15" thick PVC shutter. The high attenuation of PVC to the X-rays employed in these experiments was not appreciated at the time this data was collected.
Figure 18 illustrates the efficiency of the present invention in coulombs/roentgen, as a

-4~-unction of supply voltage. Agai~ the system is clearly more efficient at lower radiation levels.
Table IV simply presents the same data in tabular fonm.

, a~ O

o O ~O O

cr C~
o ~ ' o~

~--o V C~

ae o ~ o co O L~ N
_ N C`~ ~ d' d' J a~
C ~e I c~

G ~
1:~1 ~ .
O O O ~ O~
_ +l +l +l +l +l ~ I
O' r r C~l CO U'~

V~O ~OD O O

-50~

When a Bakelite~shutter is used at 320 MAS and 2700V supply voltage, 93.2% of all avail-able charges transfer. This represents near total discharge. Further, in view of the variance shown in Table IV in total charges available, the above example does indeed represent total discharges within experimental error.
Figure 19 illustrates total charge collected as a function of voltage applied across the detector. The curves diverge for the various exposures as the applied vol~age is increased.
This can be interpreted as meaning that the lati-tude of the detector, i.e. its ability to diffe-rentiate exposures of various levels, increases as applied voltage increases. Optimum latitude can be determine~ as a trade off between the dynamic range of the system and the signal to noise (S/N) ratio of the detector output signal.
Estimates of the values of Cl and C2 have been made based on calculations of capaci tance assuming selenium thickness of 150 microns and a dielectric constant of 6.3; mylar thickness of 4.3 mils and dielectric constant of 3.5. The experimental results allow certain conclusions to be drawn about the present invention: -(1) Use of charge method #2 has allowed use of increased voltage across the selenium while maintaining a lower voltage across the mylar.
(2) For a given thickness of selenium, the dynamic range of the system may be varied by varying the mylar thickness and applied voltage.
(3) The system's dynamic range must necessarily be greater than the range in charges neutralized by radiation absorption, -51 ~ 5~ ~t~

i.e. the x-rays cannot be allowed to comple-tely discharge any part of the detector.
This is necessary so as to maintain a field across the selenium even in areas of greatest radiation exposure. Doing so will maintain a good collection eficiency.
It is empirically estimated that any one pixel should not be discharged beyond 50% of its initial charge. This, however, is only an esti~
mate and has yet to be derived theoretically or by optimization procedures.
(4) Using the data collected, an ex-ample of the operational characteristics of the system can be computed as follows.
Assuming 44 kVp, 320 MAS x-ray source and a 6 cm. luci~e phantom, the maximum exposure to the receptor is 370 mR. When operating the invention at 2700V applied, 6.0xlO 9 coulombs are placed in motion due to irradiating an area of .3 cm2. Given a load resistance of ooo n and readout time of 4xlO 6 sec. (cor-responds to 125,000 hz band width), an ampli-fier gain of lO00, and a pixel si~e of 50 micron, the output signal is:

EoUt = 6xlO coul~cm x 2.5 x lO cm x lO00 x 1000 ~ain 4 lo~6 sec = 4.8 x 10 2 E t = 48mv System noise may be evaluated as ampli-fier noise plus Nyquist noise of the input resis-tance ., .

~.
, , E = ~4kTR~F
= ~ 4x1.37x10-23x300xlOoOx1.5x105 = 1.57~v Using an amplifier with noise figure of .8 nano volt/ ~ and 1.5x105 hz, E - .8xlO-9 (1.5x105)1/2 = .8xlO 9x3.87x102 . 30g~V
Hence, the amplifier noise is much less than the Nyquist noise of the input resistor.
Therefore, signal to noise ratio is:
48.
SfN = 1 57 = 30.5:1 this dynamic range will produce an image with approximately 9-10 shades of gray. Here a shade of gray is defined as increase in si~nal. That is, Shades of Gray = 2 loq SfN
log 2 EXPERIMENTAL SYSTEM #3 Figure 20 is a block diagram that illu-6trates the major components of the third experi-mental system built at the experimental radiology department of M.D. Anderson Hospital in Houston, Texas. This experimental system was built to test the entire integrated system of the present inven-tion and to provide a breadboard system for ini-tial clinical evaluation. This system is fully computerized.
As is shown in Figure 20, microcomputer 2007, which is a Southwest Technical Products 6800, controls laser blanker 2015; 16-bit d/a converter 2011; x-position interface module 2017;

53 ~:~5~

12-bit d/a converter 2009; and teletype 2005.
Teletype~ 005 is a model 33ASR. Sixteen-bit d/a converter 2011 is an Analog Devices 1136 and 12-bit d/a converter 2009 is an Analog Devices 1132. Laser blanking unit and laser 2015 are a Liconix ~odel 4110 helium/cadmium laser.
Laser 2015 is in a light-tight housing, not shown, such as ~le one functionally illu-strated in Figure 9, above.
The photon beam from lasex 2015 scans detector 2019. The output of detector 2019 is connected to the input of preamp 2021. The output of preamp 20~1 is connected to scan rate converter 2003; a/d converter 2023; and write laser modula-tor and laser 2025.
The output of a/d converter 2023 i5 an input to microcomputer 2007. Teletype~2005 is in two way communication with microcomputer 2007.
It would be appreciated by looking at Figure 20 th2t laser 2015 is a read laser adapted to scan detector 2019 and laser 2025 is a write laser adapted to write information out on a film or ~erographic plate. This type of sys~em is generally described in connection with Figure 11, above.
Both the read and writP laser beams are controlled by the microcomp-~ter. The output of 12-bit d/a converter 2009 drives read laser x-posi tion scanner, controller and mirror transducer 2013. It also drives write laser x-position scanner, controller and mirror transducer 2027.
Similarly, 16-bit d/a converter 2011 drives both read laser y-position scanner, con~roller and mirror transducer 2029 and write laser y-position scanner, controller and mirror transducer 2031.
It will easily be appxeciated that the beams from & ~

S5~5~ol~

-5~-both the read laser and the wri-te laser scan in sychronization, although both of ~hem need not be turned on at the same time or modulated by the same signal.
Functionally, the microprocesser accepts instructions from the telet.ype. These instruc-tions operate on a computer program. A copy of this program's listing is included with this application for the Examiner~s convenience. It is the inventors' request that it be inserted in ~he record so it will be available to the public as part of the File Wrapper of this application.
When the microprocessor addresses the 16-bit d/a converter and increments the number stored in it, the y-position mirrors of both lasers are deflected to a certain angle. In experimental system #3 this angle is sufficient to move the spot that is illuminated on detector 2019 50 microns. Thus the y-positioning of the laser beam on the detector occurs in 50 micron incre-ments. The program included with this application allows specification of line sizing on the y axis to 50, 100, 200, or 400 microns. This translates to a resolution in the image produced hy the system of 10, 5, 2.5 and 1.25 line pairs per millimeter.
The 12-bit d/h converter is not directly addressed by the computer. The computer addresses a special interface that controls the 12-bit d/a converter. This interface allows the computer to specify the starting and ending positions of the laser beam on the detector surface and along the x-axis. A schematic of x-position interface module 2017 i~ included as Figure 24. The compu-ter then issues a start command to the interface which enables a switch selectable clock to start ~S~5~

incrementing the d/a to a specific start address.
The clock continues to increment the d/a until the stop address is encountered, then the clock is disabled by the interface. This x-position inter-face accomplishes two objectives. First, the data readout range can be varied. Secondly, different size detector plates can be read out without overscanning them. This is especially valuable on an experimental system.
Computer 2007 also controls laser blank-ing, which just means that it turns the laser on and off~ The computer blanks the laser after each x-axis scan is completed. The laser is then moved back across the detector and turned back on for the next scan line.
To read out a plate using experimental system #3:
(1) The user specifies plate size and x-axis line spacing. The computer program will ask for these values.
... . .. . ..
(2) The x-axis interface is given the appropriate start and stop addresses by the computer.
(3) The x-axis line spacing and total number of required steps is determined by the computer.
(4) The computer blanks the CRT and puts the scan rate converter into the write mode.
(S) The laser is turned on by the computer.

(6) The computer instructs the inter-face to turn on the clock.

(7) The x-axis mirror sweeps the laser across the plate.

J l ~ ~

(8) The computer turns off the laser.

(9) The computer increments the y-axis d/a the required number of steps which moves the laser beam through the specified line spacing.
~ 10~ The computer then repeats steps 5-9 until the entire plate has been scanned.
(11) The computer puts the scan rate converter in the read mode and the imase is displayed.
The read laser x-position scan control-ler and y-position scan controller both feed into scan rate converter 2003. The scan rate converter allows a relatively slow video image, such as that ormed by experimental system #3, to be interfaced with a television display. Scan ra~e converter 2003 outputs a normal video signal to CRT display 2001, where the image may be viewed, moved about on the screen, or expanded to examine detail.
The example and suggested systems illu-strated and discussed in this specification are intended only to teach those skilled in the art the best way known to the inventors to make and use their invention. Nothing in this specifica-tion should be considered as limiting the scope of the present invention. Many changes could be made by those skilled in the art to produce e~uivalent systems without departin~ from the invention. For example, it is possible to use a photoconductor other than selenium as part of the detector sand-wich. ~olographic optics could be used in ~he scanning system in place of the mechanical systems used in the example. It may be desirable to alter the relative thicknesses of the various layers making up the sandwich structure or to provide fox different frequency of light beams to read out the `~:
`~

-57~

radiographic image or to sense different x-ray potentials. The present invention should only be limited by the following claims and their equiva-lents.

Claims (36)

1. A multilayered detector apparatus comprising:
a first conductive layer;
a photoconductive layer thick enough to maximize the quantum efficiency of the detector apparatus when the detector apparatus is ex-posed to radiation of known energy, said photoconductive layer being inte-grally affixed to and in electrical contact with one side of said first con-ductive layer;
a transparent insulating layer affixed to said photoconductive layer; and a transparent conductive layer integrally affixed to said in-sulating layer.

2. A detector as in Claim 1 including a blocking contact between said first conductive layer and said photoconductive layer.

3. A detector as in Claim 2 wherein the transparent insulating layer is made just thick enough to withstand the potential placed across it.

4. An apparatus as in Claim 2 including an insulating layer affixed to the other side of said first conductive layer.

5. An apparatus as in Claim 2 including first and second electri-cal connection means for electrically connecting to said first and trans-parent conductive layer, respectively.

6. An apparatus as in Claim 5 wherein said first conductive layer provides the structural support for said apparatus and all other layers are thin films deposited on said first conductive layer.

7. Apparatus as in Claim 5 wherein said transparent insulating layer provides the structural support for said apparatus and all other layers are thin films deposited on said transparent insulating layer.

8. An apparatus as in Claim 5 wherein said photoconductive layer provides the structural support for said apparatus and all other layers are thin films.

9. An apparatus as in Claims 6, 7 or 8 including an external support framework attached to at least a portion of the perimeter of the multi-layered detector structure.

10. An apparatus as in Claim 2 wherein said first conductive layer is a relatively thick sheet of aluminum, said photoconductive layer is a 100 to 400 micron layer of selenium; said transparent insulating layer is a thin film and said transparent conductive layer is a thin film of metal.

11. An apparatus as in Claim 10 wherein said detector has an unseg-mented surface area of at least 25 square inches.

12. A method of recording and reading out a latent image comprising:
exposing a multilayered detector apparatus whose photoconductive layer has no surface potential to a modulated radiation flux capable of pro-ducing electron hole pairs, said photoconductive layer being biased by an electric field during said exposure, whereby a modulated surface charge is placed on the photoconductive layer;
scanning said exposed detector with a photon beam whereby said modulated surface charge is at least partially discharged; and measuring the charging potential of said discharge as a function of time.

13. A method as in Claim 12 including the step of converting said time dependent electric potential into a video signal for storage and display.

14. A method as in Claim 13 including amplifying said video signal.

15. A method as in Claim 14 including the step of rewriting said amplified video signal onto an analog archival storage medium.

16. A method as in Claim 13 including digitalizing said video signal.

17. A method as in Claim 16 including processing said digitalized video signal in a digital computer for image enhancement and pattern recog-nition.

18. A method as in Claim 16 including storing said digitalized video signal in a digital archival storage medium.

19. A method of impressing a uniform surface charge on a multi-layered photon detector having sequentially stacked in plain parallel a first conducting layer, a junction layer, a photoconductive layer, an insulat-ing layer, and a transparent conductive layer comprising:
connecting a high electric potential across the first conducting layer and the transparent conductive layer;
storing the detector in the dark;
disconnecting the source of external electric potential; and electrically connecting said first conducting layer to said trans-parent conducting layer.

20. A method as in Claim 19 including flooding the transparent con-ductive layer side of the multilayered detector with light while the high potential is connected across the detector.

21. A method as in Claim 20 including the terminal step of reversing the polarity of the external electric potential.

22. A method as in Claim 21 wherein said electric potential is at least 2000 volts.

23. A method as in Claim 20 including the initial steps of heating said detector and then cooling it.

24. An apparatus for reading out the latent image stored as varia-tions in surface charge on a photoconductive layer in a multilayered photon detector apparatus comprising:
a light-tight housing;
a holder capable of receiving said detector at one end of said housing;
a laser producing a thin beam of light located within said housing;
said laser being pulse modulated in a recurring pattern of 5 nanoseconds to 5 microseconds of "on" time followed by 5 nanoseconds to 10 microseconds of "off" time;
scanning means for directing said beam of light in a regular raster pattern over said detector's photoconductive layer;
signal acquisition means operably connected to said detector for measuring the variable discharge potential flowing in said photoconduc-tive layer as it is scanned by said light beam;
display means responsive to said signal acquisition means for displaying image information contained in said variable discharge potential.

25. Apparatus as in Claim 24 wherein said scanning means is a multi-sided front surfaced mirror synchronously rotated about its longitudinal axis and stepped sequentially in elevation by a stepping motor responsive to the end of one scan line.

26. Apparatus as in Claim 25 wherein said stepping motor causes said light beam to scan at least 10 lines per millimeter on the surface of said photoconductor.

27. Apparatus as in Claim 24 wherein said signal acquisition means is an amplifier connected electrically between a first conductive layer of said detector and a transparent conductive layer.

28. Apparatus as in Claim 27 wherein said amplifier is operated in the short circuit mode.

29. Apparatus as in Claim 27 wherein said amplifier is cooled to reduce noise.

30. Apparatus as in Claim 27 wherein said display means is a video monitor electrically connected to the output of said amplifier and adapted to display an image formed by the electrical signal produced by said ampli-fier.

31. Apparatus as in Claim 27 including a radiographic storage and processing system operably attached and responsive to said amplifier's output.

32. A mass screening system for obtaining radiographs comprising:
a source of x-rays;
a light-tight housing spaced apart from said source and adapted to permit a patient to place the body part being x-rayed against the side of the housing proximate said source;
a multilayered photon detector apparatus mounted in said hous-ing proximate said source, the first conductive layer of said detector being covered with an insulating layer and facing said source;
means for scanning the inner photoconductive layer of said de-tector with a thin beam of light;
control means operably connected to said x-ray source and said scanning means for sequentially exposing said detector to x-rays from said source after their passage through a patient and then scanning said thin light beam in a regular raster pattern over the surface of said photoconductor;
signal acquisition means operably connected and responsive to said detector for reading out the latent image on said detector while it is scanned by said light beam;
video display means connected and responsive to said signal acquisition means for displaying the latent image readout of the detector.

33. A system as in Claim 32 wherein said screening system is a chest x-ray system.

34. A system as in Claim 32 wherein said screening system is a breast x-ray system.

35. A system as in Claim 33 or 34 wherein said x-ray dosage does not exceed 150 mR per exposure.

36. A system as in Claim 33 or 34 including storage means connected and responsive to the signal acquisition means for storing the latent images on an archival medium.