CA1157958A - Method of tuning apparatus by low power laser beam removal - Google Patents

Method of tuning apparatus by low power laser beam removal

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Publication number
CA1157958A
CA1157958A CA000420235A CA420235A CA1157958A CA 1157958 A CA1157958 A CA 1157958A CA 000420235 A CA000420235 A CA 000420235A CA 420235 A CA420235 A CA 420235A CA 1157958 A CA1157958 A CA 1157958A
Authority
CA
Canada
Prior art keywords
layer
conductive
wafer
areas
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000420235A
Other languages
French (fr)
Inventor
Brian E. Bedard
Gary R. Geller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/084,941 external-priority patent/US4288530A/en
Application filed by Motorola Inc filed Critical Motorola Inc
Priority to CA000420235A priority Critical patent/CA1157958A/en
Application granted granted Critical
Publication of CA1157958A publication Critical patent/CA1157958A/en
Expired legal-status Critical Current

Links

Abstract

ABSTRACT OF THE DISCLOSURE

A thin film structure is provided with the capability of low-power laser tuning and trimming. Trim windows in a plated ground plane are incorporated to allow automated tuning procedures using relatively low-power lasers. The trim windows are conductive, but the heavier layer of plated copper is omitted from those areas, leaving only the titanium/evaporated copper/gold layers. The method can also provide for areas of bare substrate if desired.

Description

~1~7~3~

THIN FILM STRUCTURE FOR CERAMIC SUBSTRATES

Background of the Invention The present invention relates to the field of metallized substrates for communications applications and, more particularly, to a means of tuning thin film structures such as stripline filters, using automated low-power laser trimming.
Metallization on non-conductive substrates such as ceramics is well known in the art for such circuit compo-nents as stripline filters. Such filters typically include a configuration or pattern of conductive elements on one surface of the ceramic plate, these elements interacting with a relatively large area of ground plane on the opposing substrate surface. For electrical reasons, the ground plane is required to be a very low conductivity layer, typically including a heavy (one mil) layer of plated copper. Filters or other such components may require removal of a portion of the conductive ground plane for tuning or other adjustment. Such adjustments have been made by abrasion; i.e., mechanically removing small portions of the ground plane in the appropriate areas, using a diamond grinding wheel or sand trimmer.
It will be obvious that such a method does not lend itself to automated trimming procedures, where the cir-cuitry is monitored as it is tuned and the monitoring equipment controls an extremely precise laser beam.
Thick film resistors on substrates can be trimmed precisely by low-power (1.8 kw input power) laser beams, but that power is not sufficient to trim a heavily plated ground plane.

Summary of the Invention It is therefore an object of the present invention to provide a means of trimming a ground plane or the like with a low-power laser beam.
It is a particular obje t to provide such a means utilizing standard process steps.
It is another object to provide additionally for removal of all conductive layers on other portions of the substrate.
These objects, and others which will become apparent, are provided in a struc~ure and accompanying method in accordance with the present invention. On a lS non-conductive wafer, one or more conductive circuit components are formed on a first surface. A conductive layer or ground plane is formed on a substantial portion of the second surface of the wafer opposite at least one element of a circuit component which requires a fine tuning or trimming adjustment. The ground plane will consist of a thin conductive layer, such as copper evaporated over titanium, a heavy conductive layer such as plated copper, and a thin protective layer of a noble metal such as gold. The heavy copper layer will have an ~5 aperture opposite at least a portion of the component to be adjusted. Therefore, tuning or trimming can be accom-plished by removing discrete areas of the thinner layers within the aperture in the heavy layer, using a relative-ly low-power laser beam, such as those used to t-rim thick film resistors.

~7~
-2a-More p~rticularly, there is pro~ided;
A tunable device for use in communications equipment and comprising:
a non-conductive wafer;
conductive circuit elements formed on a first surface of said wafer; and a conductive element formed on a substantial portion of the second surface of said wafer, positioned opposite at least one of said circuit elements on the first wafer surface, and including a first conductive layer, a superimposed second conductive layer, the second layer being substantially thicker than the first ~ayer and having an aperture opposite the at least one circuit element on the first wafer surface, and a third conduc-ti~e layer superimposed on the exposed portions of the first and second conductive layers and formed of a noble metal.
There is also provided:
A method of tuning an apparatus for use in communica-tions equipment comprising the steps of:
providing a non-conductive wafer;
providing on a first major surface of said wafer at least one conductive circuit element;
providing on the second major surface of said substrate a relatîvely large conducti~e area having generally a first predetermined thickness and having, opposite the at least one circuit element, a portion of a second predetermined thickness, the second predetermined thickness being substantially thinnex than the first predetermined thickness; and evaporating appropriate portions of the thinner portion of the large conductive area by means of a low-power laser beam having sufficient energy to evaporate the thinner portions of the conductive areas on the second major surface and insuf-ficient energy to evaporate the thicker portions; thereby altering the capacitance between the conductive elements on the opposing sides of ~aid wafer~

7~

-2b-There is further provided:
~ method of tuning an apparatu8 for use in communi cation8 equipment comprising the following steps:
ta~ providing a non-conductive wafer;
~a'l providing conductive circuit elements on a first major sur~ace of the wafer;
(b~ evaporating a relatively thin layer o~ metal onto a second major surface o~ the wafer~
Cc) covering said thin metal layer w~th a layer of photo-sensitive material;
Cd~ positioning a ma5k o~er said photo-sensitive material;
Ce2 exposing at least one portion of said photo-sensitive material to radiation through said mask;
L~2 develop~ng said photo~sensitive material;
(gl removing the uncured portions of said photo-sensitive mater~al;
(hl plating a relatively heavy layer of metal on those portions of the first metal layer not covered by cured photo-sen~itive material;
Ci) removing the cured portions of the photo-sensitive material;
(~1 plating a layer of noble metal over all exposed metal surfaces; and (s'l tuning the apparatus ~y evaporating appropriate por-tions of those areas of metal lacking the relatively heavy plated layer and thereby reducing the capaci-tance between the opposing metal layers by means of a lo~-power laser beam having sufficient energy to evaporate the thinner portions of the conductive areas on the ~econd major surface and insufficient energy to eVaporate the thicker portions.

~79~3 Brief Description of the Drawing Fig. 1 is a bottom view of a stripline filter sub strate.
Fig. 2 is a cut-away, perspective view of a portion of the substrate of Fig. 1, along the line 2-2.
Fig. 3 shows the successive steps in one preferred embodiment of the invention.
Fig. 4 shows the successive steps in another embodi-ment, which provides for areas of bare substrate.

Detailed Description of the Preferred Embodiment For purposes of clarity, the existing thin film process will be briefly described. On a non-conductive substrate, a very thin layer of titanium is deposited first to provide adhesion for the subsequent layers of metal. Next, a thin layer of copper is evaporated over the titanium. A photo-resist is applied and exposed to ultraviolet light through a mask, the unexposed areas resulting eventually in conductive areas. After the resist is developed, the unhardened portions are stripped off and a thick layer of copper is plated on the areas of bare copper. A thin layer of gold is plated on over all, then the hardened resist is stripped from the substrate.
Etching subse~uently removes all thin layers down to the bare substrate in the desired areas.
As may be seen in the drawing, the invention is used for the fine tuning (trimming) of a stripline filter on a substrate 10 ~see Figs. 2-4) such as a ceramic wafer. In this example, the visible surface of the substrate is covered by a ground plane 12 having t-hree apertures or "trim windows" 14. The other surface of the substrate 10 has on it ~as indicated by dashed lines in Fig. 1) ele-ments 16A, 16B and 16C of the filter circuit.

1~75~

Stripline filters are well known in the art, andhave previously been constructed using a layer of heavy copper throughout the ground plane. Tuning or other fine adjustment has been accomplished by use of an abrasion techni~ue using a diamond grinding wheel. No further description of the circuit aspects of the filter will be given here, since the present invention is only concerned with the capability of fine tuning by the removal of discrete areas of the ground plane with a low-power laser beam.
In the cut-away, perspective view of Fig. 2, the filter of Fig. 1 is shown cut along the line 2-2 with the edges of circuit elements 16A, B and C visible on the lower surface (normally considered the top side of the filter), The ground plane 12 and windows 14 are on the upper si~e of the ceramic wafer 10 in this view and it is apparent that the copper layer within the window 14 is thinner than it is in the adjacent areas. It is to be noted that no attempt has been made to scale any of the drawing figùres; instead, typical dimensions are given as appropriate in the text.
Fig. 3 shows a series of progressive steps in producing the ground plane only of one embodiment of the invention. Fig. 3A shows the bare substrate 10 and Fiy.
3B shows a very thin (500 A) added layer 18 of deposited titanium. In Fig. 3C, a thin (10,000 A) layer 20 of cop-per has been evaporated over the titanium layer 18. In Fig. 3D, a film 22 of a photo-resist (such as that sold commercially as Riston~ 218R) has been added, and a mask 24 is shown in position to expose the area 14' of the photo-resist film 22 for providing one window 14 (Figs.
1 and 2). After the photo-resist has been exposed to ultraviolet light through the mask, and developed, the unhardened areas are removed as shown in Fig. 3E. A
heavy (0.7 to 1.2 mils) layer 25 of copper is plated on 79~

all areas except area 14, as shown in Fig. 3F. The hard-ened resist 22 is then stripped off, as shown in Fig. 3G.
As shown in Fig. 3H, a thin (5000 A) layer 26 of gold is plated over all exposed copper, both thick and thin layers. In the tuning operation, a low-powered laser beam can be manually or automatically controlled to remove as much of the thin layers of gold and copper in any of the windows 14 as is required; e.g., for tuning a stripline filter.
In Fig. 4 is seen the series of progressive steps in an alternate embodiment which can provide both the trim windows 14 as shown in Fig. 3 and areas of bare substrate which may be desired for other purposes than tuning.
Figs. 4A-4D are the same as Figs. 3A-3D except that the mask 24-l has an area 14' for providing the window or aperture 14 and another area 28' for providing an area 28 (see Fig. 4M) of bare substrate. After the photo-resist 22 has been exposed to ultraviolet light through the mask 24 and developed, the unhardened resist is removed as in Fig. 4E, leaving areas 22-l and 22-2. The heavy copper layer 25 is then plated on ~Fig. 4F) follow-ed by the thin layer 26 of gold (Fig, 4G). The hardened areas of photo-resist 22 are then stripped off as shown in Fig. 4H, and another layer 30 of the photo-resist is applied over all (Fig. 4I). All areas except area 14' of the photo-resist are exposed through a second mask 24-2, then the photo-resist is developed. After the unhardened resist is removed (Fig. 4J); i.e., the portion in the area 14', that area is plated with gold (layer 26) as shown in Fig. 4K. When the hardened resist is removed (Fig. 4L), all exposed surfaces have been plated with gold except for the area 28'. An etching process (Fig.
4M) will remove the thin copper and titanium layer to provide bare substrate in the area 28.

7~

Thus there has been shown and described a means of providing a tunable circuit element on a substrate using only the standard process steps, and of tuning said element with a low-power laser beam. It is intended to cover all modifications and variations which fall within the spirit and scope of the appended claims.

Claims (5)

Claims
1. A tunable device for use in communications equipment and comprising:
a non-conductive wafer;
conductive circuit elements formed on a first surface of said wafer; and a conductive element formed on a substantial portion of the second surface of said wafer, positioned opposite at least one of said circuit elements on the first wafer surface, and including a first conductive layer, a superimposed second conductive layer, the second layer being substantially thicker than the first layer and having an aperture opposite the at least one circuit element on the first wafer surface, and a third conduc-tive layer superimposed on (the exposed portions of the first and second conductive layers) and formed of a noble metal.
2. A tunable device in accordance with claim 1 wherein said first conductive layer is an evaporated layer and said second and third conductive layers are plated layers.
3. A tunable device in accordance with claim 2 wherein said first and second layers are comprised of copper and said third layer is comprised of gold.
4. A tunable device in accordance with claim 1 wherein the conductive elements are formed on a fourth evaporated layer of a conductive material other than the material of said first, second and third conductive layers.
5. A tunable device in accordance with claim 4 wherein the fourth evaportated layer is comprised of titanium.
CA000420235A 1979-10-15 1983-01-25 Method of tuning apparatus by low power laser beam removal Expired CA1157958A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA000420235A CA1157958A (en) 1979-10-15 1983-01-25 Method of tuning apparatus by low power laser beam removal

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US06/084,941 1979-10-15
US06/084,941 US4288530A (en) 1979-10-15 1979-10-15 Method of tuning apparatus by low power laser beam removal
CA000360829A CA1145858A (en) 1979-10-15 1980-09-23 Method of tuning apparatus by low power laser beam removal
CA000420235A CA1157958A (en) 1979-10-15 1983-01-25 Method of tuning apparatus by low power laser beam removal

Publications (1)

Publication Number Publication Date
CA1157958A true CA1157958A (en) 1983-11-29

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CA000420235A Expired CA1157958A (en) 1979-10-15 1983-01-25 Method of tuning apparatus by low power laser beam removal

Country Status (1)

Country Link
CA (1) CA1157958A (en)

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