CA1096511A - Light-controlled thyristor with anode-base surface firing - Google Patents
Light-controlled thyristor with anode-base surface firingInfo
- Publication number
- CA1096511A CA1096511A CA279,614A CA279614A CA1096511A CA 1096511 A CA1096511 A CA 1096511A CA 279614 A CA279614 A CA 279614A CA 1096511 A CA1096511 A CA 1096511A
- Authority
- CA
- Canada
- Prior art keywords
- zone
- thyristor
- curve
- highly doped
- recited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010304 firing Methods 0.000 title abstract description 4
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 230000000903 blocking effect Effects 0.000 claims abstract description 16
- 238000001465 metallisation Methods 0.000 claims description 9
- 230000001960 triggered effect Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 230000002028 premature Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH6930/76 | 1976-06-02 | ||
| CH693076A CH594988A5 (US07582779-20090901-C00044.png) | 1976-06-02 | 1976-06-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1096511A true CA1096511A (en) | 1981-02-24 |
Family
ID=4317272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA279,614A Expired CA1096511A (en) | 1976-06-02 | 1977-06-01 | Light-controlled thyristor with anode-base surface firing |
Country Status (4)
| Country | Link |
|---|---|
| CA (1) | CA1096511A (US07582779-20090901-C00044.png) |
| CH (1) | CH594988A5 (US07582779-20090901-C00044.png) |
| DE (1) | DE2628792C2 (US07582779-20090901-C00044.png) |
| SE (1) | SE418548B (US07582779-20090901-C00044.png) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH634442A5 (de) * | 1978-11-15 | 1983-01-31 | Bbc Brown Boveri & Cie | Lichtzuendbarer thyristor. |
| DE3226624A1 (de) * | 1982-07-16 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf und hoher kritischer spannungsanstiegsgeschwindigkeit |
| DE3226613A1 (de) * | 1982-07-16 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE344386B (US07582779-20090901-C00044.png) * | 1968-04-17 | 1972-04-10 | Hitachi Ltd | |
| US3731162A (en) * | 1969-09-25 | 1973-05-01 | Tokyo Shibaura Electric Co | Semiconductor switching device |
| CH567803A5 (US07582779-20090901-C00044.png) * | 1974-01-18 | 1975-10-15 | Bbc Brown Boveri & Cie |
-
1976
- 1976-06-02 CH CH693076A patent/CH594988A5/xx not_active IP Right Cessation
- 1976-06-26 DE DE19762628792 patent/DE2628792C2/de not_active Expired
-
1977
- 1977-05-27 SE SE7706264A patent/SE418548B/xx not_active IP Right Cessation
- 1977-06-01 CA CA279,614A patent/CA1096511A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CH594988A5 (US07582779-20090901-C00044.png) | 1978-01-31 |
| DE2628792C2 (de) | 1986-05-22 |
| SE418548B (sv) | 1981-06-09 |
| SE7706264L (sv) | 1977-12-03 |
| DE2628792A1 (de) | 1977-12-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |