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AT&T Corp
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Western Electric Co Inc
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Priority claimed from US05/557,250external-prioritypatent/US3978426A/en
Application filed by Western Electric Co IncfiledCriticalWestern Electric Co Inc
Priority to CA305,707ApriorityCriticalpatent/CA1071069A/fr
Application grantedgrantedCritical
Publication of CA1071069ApublicationCriticalpatent/CA1071069A/fr
GaAs‐Al x Ga1− x As buried‐heterostructure lasers grown by molecular beam epitaxy with Al0. 65Ga0. 35As (Ge‐doped) liquid phase epitaxy overgrown layer for current injection confinement