CA1035052A - Vertical type junction field effect semiconductor device - Google Patents

Vertical type junction field effect semiconductor device

Info

Publication number
CA1035052A
CA1035052A CA233,828A CA233828A CA1035052A CA 1035052 A CA1035052 A CA 1035052A CA 233828 A CA233828 A CA 233828A CA 1035052 A CA1035052 A CA 1035052A
Authority
CA
Canada
Prior art keywords
semiconductor device
field effect
vertical type
junction field
type junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA233,828A
Other languages
English (en)
French (fr)
Other versions
CA233828S (en
Inventor
Kenichi Muramoto
Noboru Fuse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Application granted granted Critical
Publication of CA1035052A publication Critical patent/CA1035052A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
CA233,828A 1974-09-04 1975-08-20 Vertical type junction field effect semiconductor device Expired CA1035052A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10155574A JPS5739062B2 (OSRAM) 1974-09-04 1974-09-04

Publications (1)

Publication Number Publication Date
CA1035052A true CA1035052A (en) 1978-07-18

Family

ID=14303654

Family Applications (1)

Application Number Title Priority Date Filing Date
CA233,828A Expired CA1035052A (en) 1974-09-04 1975-08-20 Vertical type junction field effect semiconductor device

Country Status (6)

Country Link
JP (1) JPS5739062B2 (OSRAM)
CA (1) CA1035052A (OSRAM)
DE (1) DE2539021A1 (OSRAM)
FR (1) FR2284194A1 (OSRAM)
GB (1) GB1525732A (OSRAM)
NL (1) NL7510282A (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5299787A (en) * 1976-02-18 1977-08-22 Toshiba Corp Junction type field effect transistor and its production

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB837651A (en) * 1956-12-10 1960-06-15 Teszner Stanislas High power field-effect transistor
JPS5418112B2 (OSRAM) * 1971-12-20 1979-07-05
NL7303347A (OSRAM) * 1972-03-10 1973-09-12

Also Published As

Publication number Publication date
NL7510282A (nl) 1976-03-08
FR2284194A1 (fr) 1976-04-02
FR2284194B1 (OSRAM) 1979-01-19
DE2539021A1 (de) 1976-03-25
GB1525732A (en) 1978-09-20
JPS5128763A (OSRAM) 1976-03-11
JPS5739062B2 (OSRAM) 1982-08-19

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