CA1033074A - Charge effects in doped silicon dioxide - Google Patents

Charge effects in doped silicon dioxide

Info

Publication number
CA1033074A
CA1033074A CA213,953A CA213953A CA1033074A CA 1033074 A CA1033074 A CA 1033074A CA 213953 A CA213953 A CA 213953A CA 1033074 A CA1033074 A CA 1033074A
Authority
CA
Canada
Prior art keywords
silicon dioxide
doped silicon
charge effects
charge
effects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA213,953A
Other languages
French (fr)
Other versions
CA213953S (en
Inventor
Dawon Kahng
Joseph R. Ligenza
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of CA1033074A publication Critical patent/CA1033074A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CA213,953A 1973-12-10 1974-11-18 Charge effects in doped silicon dioxide Expired CA1033074A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US42328973A 1973-12-10 1973-12-10

Publications (1)

Publication Number Publication Date
CA1033074A true CA1033074A (en) 1978-06-13

Family

ID=23678332

Family Applications (1)

Application Number Title Priority Date Filing Date
CA213,953A Expired CA1033074A (en) 1973-12-10 1974-11-18 Charge effects in doped silicon dioxide

Country Status (5)

Country Link
JP (1) JPS5092087A (en)
CA (1) CA1033074A (en)
DE (1) DE2457973A1 (en)
FR (1) FR2254108B1 (en)
GB (1) GB1493954A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7902247A (en) * 1978-03-25 1979-09-27 Fujitsu Ltd METAL INSULATOR SEMICONDUCTOR TYPE SEMICONDUCTOR DEVICE AND PROCEDURE FOR MANUFACTURING IT.
JPS5557376U (en) * 1978-10-14 1980-04-18
JP4691873B2 (en) * 2003-03-31 2011-06-01 富士通株式会社 Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
GB1493954A (en) 1977-12-07
DE2457973A1 (en) 1975-06-12
FR2254108B1 (en) 1978-12-01
FR2254108A1 (en) 1975-07-04
JPS5092087A (en) 1975-07-23

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